TS5A22362_14 TI1 | Alldatasheet
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Laser Marking View Bump View B C D 3 2 1 A B C D 1 2 3 A NO2 COM2 NC2 IN2 NO1 COM1 NC1 IN1 GND NO2 COM2 NC2 IN2 NO1 COM1 NC1 IN1 GND Exposed Center Pad TS5A22362,TS5A22364 www.ti.com SCDS261E –MARCH 2008–REVISED MAY 2013 0.65-ΩDUALSPDTANALOGSWITCHESWITHNEGATIVESIGNALINGCAPABILITY Check forSamples: TS5A22362 ,TS5A22364 1FEATURES DRC PACKAGE• SpecifiedBreak-Before-MakeSwitching (TOP VIEW)
- NegativeSignalingCapability:Maximum Swing From –2.75V to2.75V (V+ = 2.75V)
- InternalShunt Switch PreventsAudibleClick- and-Pop When SwitchingBetween Two Sources (TS5A22364)
- Low ON-StateResistance(0.65Ω Typical)
- Low Charge Injection
- ExcellentON-StateResistanceMatching
- 2.3-Vto5.5-VPower Supply (V+)
- Latch-Up Performance Exceeds 100 mA Per The exposed centerpad,ifused,must be connectedas a secondaryGND orleftJESD 78,Class II electricallyopen.• ESD Performance Tested Per JESD 22 – 2500-V Human-Body Model DGS PACKAGE(A114-B,Class II) (TOP VIEW) – 1500-V Charged-DeviceModel (C101) – 200-V Machine Model (A115-A)
APPLICATIONS
- CellPhones
- PDAs
- PortableInstrumentation
- Audio Routing
- MedicalImaging YZP PACKAGE TERMINAL ASSIGNMENTS D IN1 GND IN2 C NC1 NC2 B COM1 COM2 A NO1 V+ NO2 3 2 1 Pleasebe aware thatan importantnoticeconcerningavailability,standardwarranty,and use incriticalapplicationsof Texas Instrumentssemiconductorproductsand disclaimerstheretoappearsattheend ofthisdatasheet. PRODUCTION DATA informationiscurrentas ofpublicationdate. Copyright© 2008–2013,Texas InstrumentsIncorporatedProductsconform to specificationsper the terms of the Texas Instrumentsstandardwarranty.Productionprocessingdoes not necessarilyincludetestingofallparameters.
TS5A22362,TS5A22364 SCDS261E –MARCH 2008–REVISED MAY 2013 www.ti.com This integratedcircuitcan be damaged by ESD. Texas Instrumentsrecommends thatallintegratedcircuitsbe handled with appropriateprecautions.Failuretoobserveproperhandlingand installationprocedurescan cause damage. ESD damage can rangefromsubtleperformancedegradationtocompletedevicefailure.Precisionintegratedcircuitsmay be more susceptibletodamage because verysmallparametricchanges couldcause thedevicenottomeet itspublishedspecifications.
DESCRIPTION
The TS5A22362 and TS5A22364 aresingle-poledouble-throw(SPDT) analogswitchesdesignedtooperatefrom 2.3V to5.5V. The devicesfeaturenegativesignalcapabilitythatallowssignalsbelow ground topass through theswitchwithoutdistortion.Additionally,theTS5A22364 includesan internalshuntswitch,whichautomatically dischargesany capacitanceattheNC or NO terminalswhen theyare unconnectedtoCOM. Thisreducesthe audibleclick/popnoisewhen switchingbetween two sources.The break-before-makefeaturepreventssignal distortionduringthe transferringof a signalfrom one path to another.Low ON-stateresistance,excellent channel-to-channelON-stateresistancematching,and minimaltotalharmonicdistortion(THD) performanceare idealforaudioapplications.The 3x3 mm DRC package isalsoavailableas a non-magneticpackage formedical imagingapplication.
ORDERING INFORMATION
Forpackage and orderinginformation,see thePackage OptionAddendum attheend ofthisdocument. SUMMARY OF CHARACTERISTICS V+ = 2.7V,TA = 25°C 2:1Multiplexer/DemultiplexerConfiguration (2× SPDT) Number ofchannels 2 ON-stateresistance(ron) 0.65Ω ON-stateresistancematch (Δron) 0.023Ω ON-stateresistanceflatness(ron(flat)) 0.18Ω Turn-on/turn-offtime(tON /tOFF ) 80 ns/70ns Break-before-maketime(tBBM ) 7 ns Charge injection(QC ) 150 pC Bandwidth(BW) 17 MHz OFF isolation(OISO) –66 dB at100 kHz Crosstalk(XTALK ) –75 dB at100 kHz Totalharmonicdistortion(THD) 0.01% Leakage current(INO(OFF) ,INC(OFF) ) 50 nA 10-pinWCSP (YZP), Package options 10-pinVSSOP (DGS), and 10-pinSON (DRC) FUNCTION TABLE NC TO COM, NO TO COM,IN COM TO NC COM TO NO L ON OFF H OFF ON
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8- SpeakerΩ Input Select IN2 IN1 COM2 COM1 NC2 NC1 NO2 OUT+ OUT+ OUT– OUT– NO1 TS5A22362 Audio Source 1 Audio Source 2 Input□Select Shunt Switch IN2 IN1 COM2 COM1 NC2 NC1 NO2 OUT+ OUT+ OUT– OUT– NO1 TS5A22364 Audio Source□1 Audio Source□2 8- SpeakerΩ TS5A22362,TS5A22364 www.ti.com SCDS261E –MARCH 2008–REVISED MAY 2013 APPLICATION BLOCK DIAGRAMS Figure1. TS5A22364 ApplicationBlock Diagram Shunt Switch (TS5A22364) The 50-Ω shuntswitcheson theTS5A22364 automaticallydischargeany capacitanceattheNC orNO terminals when they are unconnectedto COM. This reduces audibleclick-and-popsounds thatoccur when switching between audio sources.Audibleclicksand pops are caused when a step DC voltageisswitchedintothe speaker.By automaticallydischargingthe sidethatisnot connected,any residualDC voltageisremoved, therebyreducingtheclicksand pops. Figure2. TS5A22362 ApplicationBlock Diagram NegativeSignalingCapacity The TS5A22362 and TS5A22364 dualSPDT switchesfeaturenegativesignalcapabilitythatallowssignalsbelow groundtopass throughwithoutdistortion.These analogswitchesoperatefroma single+2.3-Vto+5.5-Vsupply. The input/outputsignalswing ofthedeviceisdependantofthesupplyvoltageV+:thedevicespass signalsas highas V+ and as lowas V+ – 5.5V,includingsignalsbelowgroundwithminimaldistortion. Table1 shows theinput/outputsignalswingtheusercan getwithdifferentsupplyvoltages. Copyright© 2008–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 3 ProductFolderLinks:TS5A22362 TS5A22364
TS5A22362,TS5A22364 SCDS261E –MARCH 2008–REVISED MAY 2013 www.ti.com Table1.INPUT/OUTPUT SIGNAL SWING MINIMUM MAXIMUMSUPPLY VOLTAGE, V+ (VNC ,VNO ,VCOM )= V+ – 5.5 (VNC ,VNO ,VCOM )= V+ 5.5V 0 V 5.5V 4.2V –1.3V 4.2V 3.3V –2.2V 3.3V 3 V –2.5V 3 V 2.5V –3 V 2.5V ABSOLUTE MINIMUM AND MAXIMUM RATINGS (1)(2) overoperatingfree-airtemperaturerange(unlessotherwisenoted) MIN MAX UNIT V+ Supplyvoltagerange(3) –0.5 6 V VNC VNO Analogvoltagerange(3)(4)(5) V+ – 6 V+ + 0.5 V VCOM VNC ,VNO ,VCOM < 0 II/OK Analogportdiodecurrent or –50 50 mA VNC ,VNO ,VCOM > V+ INC ON-stateswitchcurrent –150 150 INO VNC ,VNO ,VCOM = 0 toV+ mA ON-statepeak switchcurrent(6) –300 300ICOM INC (3)(7)(8) ON-stateswitchcurrent –350 350 INO (3)(7)(8) VNC ,VNO ,VCOM = 0 toV+ mA ON-statepeak switchcurrent(6) –500 500ICOM (3)(7)(8) VI Digitalinputvoltagerange –0.5 6.5 V IIK Digitalinputclamp current(3)(4) VI< 0 –50 50 mA I+ ContinuouscurrentthroughV+orGND –100 100 mAIGND Tstg Storagetemperaturerange –65 150 °C (1) Stressesabove theseratingsmay cause permanentdamage. Exposuretoabsolutemaximum conditionsforextendedperiodsmay degradedevicereliability.These arestressratingsonly,and functionaloperationofthedeviceattheseorany otherconditionsbeyond thosespecifiedisnotimplied. (2) The algebraicconvention,whereby themost negativevalueisa minimum and themost positivevalueisa maximum (3) Allvoltagesarewithrespecttoground,unlessotherwisespecified. (4) The inputand outputvoltageratingsmay be exceeded iftheinputand outputclamp-currentratingsareobserved. (5) Thisvalueislimitedto5.5V maximum. (6) Pulseat1-ms duration<10% dutycycle. (7) V+ = 3.0V to5.0V,TA = –40°C to85°C. (8) ForYZP package only. THERMAL IMPEDANCE RATINGS UNIT DGS package 56.5 θJA Package thermalimpedance(1) DRC package 165.36 °C/W YZP package 93 (1) The package thermalimpedance iscalculatedinaccordancewithJESD 51-7.
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TS5A22362,TS5A22364 www.ti.com SCDS261E –MARCH 2008–REVISED MAY 2013 ELECTRICAL CHARACTERISTICS FOR 2.5-VSUPPLY (1) V+ = 2.3V to2.7V,TA = –40°C to85°C (unlessotherwisenoted) PARAMETER SYMBOL TEST CONDITIONS TA V+ MIN TYP MAX UNIT Analog Switch Analogsignal VCOM , V+ – 5.5 V+ Vrange VNO ,VNC ON-state 25°C 0.023 0.11 resistancematch VNC orVNO = 1.5V, COM toNO orNC,Δron 2.7V Ωbetween ICOM = –100 mA, See Figure16 Full 0.15 channels Shuntswitch resistance rSH INO orINC = 10 mA Full 2.7V 25 50 Ω(TS5A22364 only) VNC = 2.25V,V+ – 5.5V 25°C –50 50 VCOM = V+ – 5.5V,2.25V NC, NO VNO = Open OFF leakage COM toNOINC(OFF) ,current or See Figure17 2.7 nAINO(OFF) Full –375 375(TS5A22362 VNO = 2.25V,V+ – 5.5V, Only) VCOM = V+ – 5.5V,2.25V VNC = Open COM toNC COM 25°C –50 50VNC and VNO = Open,ON leakage ICOM(ON) See Figure18 2.7V nAVCOM = V+,V+ – 5.5V, Full –375 375current DigitalControlInputs(IN)(2) Inputlogichigh VIH Full 1.4 5.5 V Inputlogiclow VIL Full 0.6 V 25°C –250 250Inputleakage IIH,IIL VIN = V+ or0 2.7V nAcurrent Full –250 250 (1) The algebraicconvention,whereby themost negativevalueisa minimum and themost positivevalueisa maximum (2) Allunused digitalinputsofthedevicemust be heldatV+ orGND toensureproperdeviceoperation.RefertotheTIapplicationreport, ImplicationsofSlow orFloatingCMOS Inputs,literaturenumber SCBA004. Copyright© 2008–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 5 ProductFolderLinks:TS5A22362 TS5A22364
TS5A22362,TS5A22364 SCDS261E –MARCH 2008–REVISED MAY 2013 www.ti.com ELECTRICAL CHARACTERISTICS FOR 2.5-VSUPPLY (1) (continued) V+ = 2.3V to2.7V,TA = –40°C to85°C (unlessotherwisenoted) PARAMETER SYMBOL TEST CONDITIONS TA V+ MIN TYP MAX UNIT Dynamic 25°C 2.5V 44 80 VCOM = V+, C L = 35 pF,Turn-ontime tON ns2.3V toR L = 300 Ω, See Figure20 Full 802.7V 25°C 2.5V 22 70 VCOM = V+, C L = 35 pF,Turn-offtime tOFF ns2.3V toR L = 300 Ω, See Figure20 Full 702.7V Break-before- See Figure21 forTS5A22362tBBM 25°C 2.5V 1 7 nsmake time See Figure22 forTS5A22364 VGEN = 0, C L = 1 nF,Charge injection Q C 25°C 2.5V 150 pCR GEN = 0, See Figure26 NC, NO OFF capacitance C NC(OFF) , VNC orVNO = V+ orGND, See Figure19 25°C 2.5V 70 pF(TS5A22362 C NO(OFF) only) NC, NO, COM VCOM = V+ orGND,C COM(ON) See Figure19 25°C 2.5V 370 pFON capacitance SwitchON, f= 10 MHz Digitalinput C I VI= V+ orGND See Figure19 25°C 2.5V 2.6 pFcapacitance Bandwidth BW R L = 50 Ω,–3 dB See Figure21 25°C 2.5V 17 MHz f= 100 kHz,OFF isolation O ISO R L = 50 Ω 25°C 2.5V –66 dBSee Figure24 f= 100 kHz,Crosstalk XTALK R L = 50 Ω 25°C 2.5V –75 dBSee Figure25 f= 20 Hz toTotalharmonic R L = 600 Ω,THD 20 kHz, 25°C 2.5V 0.01 %distortion C L = 15 pF, See Figure27 Supply 25°C 0.2 1.1Positive I+ VI= V+ orGND 2.7V μAsupplycurrent Full 1.3 Positive I+ VI= V+ – 5.5V Full 2.7V 3.3 μAsupplycurrent
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TS5A22362,TS5A22364 www.ti.com SCDS261E –MARCH 2008–REVISED MAY 2013 ELECTRICAL CHARACTERISTICS FOR 3.3-VSUPPLY (1) V+ = 3 V to3.6V,TA = –40°C to85°C (unlessotherwisenoted) PARAMETER SYMBOL TEST CONDITIONS TA V+ MIN TYP MAX UNIT Analog Switch Analogsignal VCOM , V+ – 5.5 V+ Vrange VNO ,VNC ON-state 25°C 0.024 0.13COM toNO orresistancematch VNC orVNO = 1.5V,Δron NC, 3 V Ωbetween ICOM = –100 mA, Full 0.13See Figure16channels Shuntswitch resistance rSH INO orINC = 10 mA Full 3 V 25 37 Ω(TS5A22364 only) VNC = 3 V,V+ – 5.5V 25°C –50 50 VCOM = V+ – 5.5V,3 V NC, NO VNO = Open OFF leakage COM toNOINC(OFF) ,current or See Figure17 3.6V nAINO(OFF) Full –375 375(TS5A22362 VNO = 3 V,V+ – 5.5V, only) VCOM = V+ – 5.5V,3 V VNC = Open COM toNC COM COM toNO or 25°C –50 50VNC and VNO = Open,ON leakage ICOM(ON) NC, 3.6V nAVCOM = V+,V+ – 5.5V, Full –375 375current See Figure18 DigitalControlInputs(IN)(2) Inputlogichigh VIH Full 1.4 5.5 V Inputlogiclow VIL Full 0.8 V 25°C –250 250Inputleakage IIH,IIL VIN = V + or0 3.6V nAcurrent Full –250 250 (1) The algebraicconvention,whereby themost negativevalueisa minimum and themost positivevalueisa maximum (2) Allunused digitalinputsofthedevicemust be heldatV+ orGND toensureproperdeviceoperation.RefertotheTIapplicationreport, ImplicationsofSlow orFloatingCMOS Inputs,literaturenumber SCBA004. Copyright© 2008–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 7 ProductFolderLinks:TS5A22362 TS5A22364
TS5A22362,TS5A22364 SCDS261E –MARCH 2008–REVISED MAY 2013 www.ti.com ELECTRICAL CHARACTERISTICS FOR 3.3-VSUPPLY (1) (continued) V+ = 3 V to3.6V,TA = –40°C to85°C (unlessotherwisenoted) PARAMETER SYMBOL TEST CONDITIONS TA V+ MIN TYP MAX UNIT Dynamic 25°C 3.3V 34 80 VCOM = V+, C L = 35 pF,Turn-ontime tON ns3 V toR L = 300 Ω, See Figure20 Full 803.6V 25°C 3.3V 19 70 VCOM = V+, C L = 35 pF,Turn-offtime tOFF ns3 V toR L = 300 Ω, See Figure20 Full 703.6V Break-before- See Figure21 forTS5A22362tBBM 25°C 3.3V 1 7 nsmake time See Figure22 forTS5A22364 VGEN = 0, C L = 1 nF,Charge injection Q C 25°C 3.3V 150 pCR GEN = 0, See Figure26 NC, NO OFF capacitance C NC(OFF) , VNC orVNO = V+ or See Figure19 25°C 3.3V 70 pF(TS5A22362 C NO(OFF) V+ – 5.5V, only) NC, NO, COM VCOM = V+ orGND,C COM(ON) See Figure19 25°C 3.3V 370 pFON capacitance f= 10 MHz Digitalinput C I VI= V+ orGND See Figure19 25°C 3.3V 2.6 pFcapacitance SwitchON,Bandwidth BW R L = 50 Ω,–3 dB 25°C 3.3V 17.5 MHzSee Figure21 f= 100 kHz,OFF isolation O ISO R L = 50 Ω, 25°C 3.3V –68 dBSee Figure24 f= 100 kHz,Crosstalk XTALK R L = 50 Ω, 25°C 3.3V –76 dBSee Figure25 f= 20 Hz to20Totalharmonic R L = 600 Ω,THD kHz, 25°C 3.3V 0.008 %distortion C L = 15 pF, See Figure27 Supply 25°C 0.1 1.2 VI= V+ orGND 3.6V μAPositive I+ Full 1.3supplycurrent VI= V+ –5.5V Full 3.6V 3.4 μA
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TS5A22362,TS5A22364 www.ti.com SCDS261E –MARCH 2008–REVISED MAY 2013 ELECTRICAL CHARACTERISTICS FOR 5-V SUPPLY (1) V+ = 4.5V to5.5V,TA = –40°C to85°C (unlessotherwisenoted) PARAMETER SYMBOL TEST CONDITIONS TA V+ MIN TYP MAX UNIT Analog Switch Analogsignal VCOM , V+ – 5.5 V+ Vrange VNO ,VNC ON-state VNC orVNO = V+,1.6V, COM toNO or 25°C 0.076 0.46 resistance ron(flat) V+ = –5.5V, NC, 4.5V Ω Full 0.5flatness ICOM = –100 mA, See Figure16 Shuntswitch resistance rSH INO orINC = 10 mA Full 4.5V 16 36 Ω(TS5A22364 only) VNC = 4.5V,V+ – 5.5V 25°C –50 50 VCOM = V+ – 5.5V,4.5V VNO = Open NC, NO COM toNOINC(OFF) ,OFF leakage or See Figure17 5.5V nAINO(OFF) Full –375 375current VNO = 4.5V,V+ – 5.5V, VCOM = V+ – 5.5V,4.5V VNC = Open COM toNC COM 25°C –50 50VNC and VNO = Open,ON leakage ICOM(ON) See Figure18 5.5V nAVCOM = V+,V+ – 5.5V, Full –375 375current DigitalControlInputs(IN)(2) Inputlogichigh VIH Full 2.4 5.5 V Inputlogiclow VIL Full 0.8 V 25°C –250 250Inputleakage IIH,IIL VIN = V + or0 5.5V nAcurrent Full –250 250 (1) The algebraicconvention,whereby themost negativevalueisa minimum and themost positivevalueisa maximum (2) Allunused digitalinputsofthedevicemust be heldatV+ orGND toensureproperdeviceoperation.RefertotheTIapplicationreport, ImplicationsofSlow orFloatingCMOS Inputs,literaturenumber SCBA004. Copyright© 2008–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 9 ProductFolderLinks:TS5A22362 TS5A22364
TS5A22362,TS5A22364 SCDS261E –MARCH 2008–REVISED MAY 2013 www.ti.com ELECTRICAL CHARACTERISTICS FOR 5-V SUPPLY (1) (continued) V+ = 4.5V to5.5V,TA = –40°C to85°C (unlessotherwisenoted) PARAMETER SYMBOL TEST CONDITIONS TA V+ MIN TYP MAX UNIT Dynamic 25°C 5 V 27 80 VCOM = V+, C L = 35 pF,Turn-ontime tON ns4.5V toR L = 300 Ω, See Figure20 Full 805.5V 25°C 5 V 13 70 VCOM = V+, C L = 35 pF,Turn-offtime tOFF ns4.5V toR L = 300 Ω, See Figure20 Full 705.5V Break-before- VNC = VNO = V+/2 C L = 35 pF,tBBM 25°C 5 V 1 3.5 nsmake time R L = 300 Ω, See Figure21 VGEN = 0, C L = 1 nF,Charge injection Q C 25°C 5 V 10 pCR GEN = 0, See Figure26 NC, NO OFF capacitance C NC(OFF) , VNC orVNO = V+ or See Figure19 25°C 5 V 70 pF(TS5A22362 C NO(OFF) V+ – 5.5V, only) NC, NO, COM C COM(ON) VCOM = V+ orGND, See Figure19 25°C 5 V 370 pFON capacitance Digitalinput C I VI= V+ orGND See Figure19 25°C 5 V 2.6 pFcapacitance Bandwidth BW R L = 50 Ω, See Figure21 25°C 5 V 18.3 MHz f= 100 kHz,OFF isolation O ISO R L = 50 Ω, 25°C 5 V –70 dBSee Figure24 f= 100 kHz,Crosstalk XTALK R L = 50 Ω, 25°C 5 V –78 dBSee Figure25 f= 20 Hz to20Totalharmonic R L = 600 Ω,THD kHz, 25°C 5 V 0.009 %distortion C L = 15 pF, See Figure27 Supply 25°C 0.2 1.3 VI= V+ orGNDPositive I+ Full 5.5V 3.5 μAsupplycurrent VI= V+ – 5.5V Full 5
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–18 –16 –14 –12 –10 1 1000 Frequency (MHz) Magnitude (dB) -40 25 85 Temperature (/c176C) Leakage (nA) –10 110 130 150 NO/NC (on) COM (on) 0.00 0.10 0.15 0.05 0.20 0.25 0.30 0.35 0.40 0.45 0.50 –1 0 1 2 3 54 VCOM (V) ron /c40Ω) TA = 85/c176 C TA = 25/c176 C TA = -40 /c176 C 0.0 0.1 0.2 0.3 0.4 0.5 0.6 –3 –2 –1 0 1 32 4 VCOM (V) ron /c40Ω) TA = 85/c176 C TA = 25/c176 C TA = -40 /c176 C VCOM (V) ron /c40Ω) 0.2 0.4 0.6 0.8 1.2 V =□2.3□V+ V+ =□4.5□V V+ =□3□□V VCOM (V) ron /c40Ω) –3 –2 –1 0 1 2 3 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 TA = 25°C TA = -40°C TA = 85°C TS5A22362,TS5A22364 www.ti.com SCDS261E –MARCH 2008–REVISED MAY 2013 TYPICAL PERFORMANCE Figure3.ron vs VCOM Figure4.ron vs VCOM (V+ = 2.7V) Figure5.ron vs VCOM (V+ = 3.3V) Figure6.ron vs VCOM (V+ = 5 V) Figure7.Leakage Currentvs Temperature Figure8.InsertionLoss Copyright© 2008–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 11 ProductFolderLinks:TS5A22362 TS5A22364
Supply Voltage (V) tOFF t (ns)ON /tOFF tON 0.0E+00 5.0E-09 1.0E-08 1.5E-08 2.0E-08 2.5E-08 3.0E-08 3.5E-08 I (+ μA) V (+ V) 0.0001 0.0011 0.0021 0.0031 0.0041 0.0051 0.0061 0.0071 0.0081 0.0091 10 100 1000 10000 100000 Frequency (Hz) THD -90 -80 -70 -60 -50 -40 -30 -20 -10 1 1000 Frequency (MHz) Attenuation (dB) -90 -80 -70 -60 -50 -40 -30 -20 -10 Attenuation (dB) Frequency (MHz) 10001 Voltage (V) Charge Injection (pC) –200 –100 100 200 300 400 500 0 1.8 2.5 3.3 5 V = 2.5 VCC V = 3.3 VCC V = 5 VCC TS5A22362,TS5A22364 SCDS261E –MARCH 2008–REVISED MAY 2013 www.ti.com TYPICAL PERFORMANCE (continued) Figure9.OFF Isolationvs Frequency Figure10.Charge Injection(QC )vs VCOM Figure11.Crosstalk(V+ = 3.3V) Figure12.TotalHarmonic Distortionvs Frequency Figure13.Power-Supply Currentvs V+ Figure14.tON and tOFF vs Supply Voltage
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t (ns)ON /tOFF –40 25 85 Temperature(°C) tOFF tON TS5A22362,TS5A22364 www.ti.com SCDS261E –MARCH 2008–REVISED MAY 2013 TYPICAL PERFORMANCE (continued) Figure15.tON and tOFF vs Temperature (2.5-VSupply) Copyright© 2008–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 13 ProductFolderLinks:TS5A22362 TS5A22364
+ OFF-State□Leakage□Current Channel□OFF V =□V or□VI IH IL Ω IN TS5A22362,TS5A22364 SCDS261E –MARCH 2008–REVISED MAY 2013 www.ti.com PARAMETER MEASUREMENT INFORMATION Figure16.ON-StateResistance(rON ) Figure17.OFF-StateLeakage Current (ICOM(OFF) ,INO(OFF) )
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Meter V = VBIAS + or GND and or Capacitance is measured at NO, COM, and IN inputs during ON and OFF conditions. VIHV VI IL= ON-State□Leakage□Current Channel□ON V =□V or□VI IH IL IN TS5A22362,TS5A22364 www.ti.com SCDS261E –MARCH 2008–REVISED MAY 2013 PARAMETER MEASUREMENT INFORMATION (continued) Figure18.ON-StateLeakage Current (ICOM(ON) ,INO(ON) ) Figure19.Capacitance (CI,C COM(OFF) ,C COM(ON) ,C NO(OFF) ,C NO(ON) ) A. Allinputpulsesaresuppliedby generatorshavingthefollowingcharacteristics:PRR ≤ 10 MHz, ZO = 50 Ω,tr < 5 ns, tf< 5 ns. B. C L includesprobeand jigcapacitance. Copyright© 2008–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 15 ProductFolderLinks:TS5A22362 TS5A22364
NC□or□NO NC□or□NO V or□VNC NO V or□VNC NO =□□V /2 R =□□300 C =□□35□pF L L Ω 300 Ω 300 Ω 35□pF VCOMRL CL V+tON tON 90% 90%Switch Output (V )NO Logic Intput (V )I TEST tOFF tOFF V+35□pF IN TS5A22362,TS5A22364 SCDS261E –MARCH 2008–REVISED MAY 2013 www.ti.com PARAMETER MEASUREMENT INFORMATION (continued) Figure20.Turn-On (tON )and Turn-OffTime (tOFF ) A. C L includesprobeand jigcapacitance. B. Allinputpulsesaresuppliedby generatorshavingthefollowingcharacteristics:PRR ≤ 10 MHz, ZO = 50 Ω,tr < 5 ns, tf< 5 ns. Figure21.Break-Before-MakeTime (tBBM ) (TS5A22362 Only)
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Network Analyzer□Setup Source□Power□=□0□dBM (632-mV□P-P at□50- load) DC□Bias□=□350□mV Ω Channel□ON:□NO□to□COM V =□V or□VI IH IL 50 Ω Ω IN VOH NC□or□NO NC□or□NO V or□VNC NO V or□VNC NO =□GND R =□□1□k R =□□100 C =□□35□pF L PU L Ω Ω RPU 10% 10% TS5A22362,TS5A22364 www.ti.com SCDS261E –MARCH 2008–REVISED MAY 2013 PARAMETER MEASUREMENT INFORMATION (continued) Figure22.Break-Before-MakeTime (tBBM ) (TS5A22364 Only) A. C L includesprobeand jigcapacitance. B. Allinputpulsesaresuppliedby generatorshavingthefollowingcharacteristics:PRR ≤ 10 MHz, ZO = 50 Ω,tr < 5 ns, tf< 5 ns. Figure23.Bandwidth (BW) Copyright© 2008–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 17 ProductFolderLinks:TS5A22362 TS5A22364
x Δ Δ IN Network Analyzer□Setup Source□Power□=□0□dBM (632-mV□P-P at□50- load) DC□Bias□=□350□mV Ω Channel□ON:□NC□to□COM V =□V or□VI IH IL Channel□OFF:□NO□to□COM 50 Ω NC NO VNC VNO Ω Ω IN Network Analyzer□Setup Source□Power□=□0□dBM (632-mV□P-P at□50- load) DC□Bias□=□350□mV Ω Channel□OFF:□NO□to□COM V =□V or□VI IH IL 50 Ω Ω Ω IN TS5A22362,TS5A22364 SCDS261E –MARCH 2008–REVISED MAY 2013 www.ti.com PARAMETER MEASUREMENT INFORMATION (continued) Figure24.OFF Isolation(OISO) Figure25.Crosstalk(XTALK ) A. Allinputpulsesaresuppliedby generatorshavingthefollowingcharacteristics:PRR ≤ 10 MHz, ZO = 50 Ω,tr < 5 ns, tf< 5 ns. B. C L includesprobeand jigcapacitance. Figure26.Charge Injection(QC )
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Channel□ON:□COM□to□NO V =□V or□V R =□□600 I IH IL L SOURCE + SOURCE L Ω 600 Ω 600 Ω COM NO V /2+ –V /2+ IN TS5A22362,TS5A22364 www.ti.com SCDS261E –MARCH 2008–REVISED MAY 2013 PARAMETER MEASUREMENT INFORMATION (continued) A. C L includesprobeand jigcapacitance. Figure27.TotalHarmonic Distortion(THD) Copyright© 2008–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 19 ProductFolderLinks:TS5A22362 TS5A22364
TS5A22362,TS5A22364 SCDS261E –MARCH 2008–REVISED MAY 2013 www.ti.com
REVISION HISTORY
Changes from RevisionC (April2010)toRevisionD Page Changes from RevisionD (November 2011)toRevisionE Page
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www.ti.com 8-Jul-2013 Addendum-Page 1 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3) Op Temp (°C) Device Marking (4/5) Samples TS5A22362DGSR ACTIVE VSSOP DGS 10 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 39R TS5A22362DGSRG4 ACTIVE VSSOP DGS 10 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 39R TS5A22362DRCR ACTIVE SON DRC 10 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 85 ZVG TS5A22362DRCRG4 ACTIVE SON DRC 10 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 85 ZVG TS5A22362DRCT-NM ACTIVE SON DRC 10 250 Green (RoHS & no Sb/Br) CU SN Level-2-260C-1 YEAR -40 to 85 ZVGNM TS5A22362YZPR ACTIVE DSBGA YZP 10 3000 Green (RoHS & no Sb/Br) SNAGCU Level-1-260C-UNLIM -40 to 85 392 TS5A22364DGSR ACTIVE VSSOP DGS 10 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 38R TS5A22364DGSRG4 ACTIVE VSSOP DGS 10 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 38R TS5A22364DRCR ACTIVE SON DRC 10 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 85 ZVF TS5A22364YZPR ACTIVE DSBGA YZP 10 3000 Green (RoHS & no Sb/Br) SNAGCU Level-1-260C-UNLIM -40 to 85 382 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
www.ti.com 8-Jul-2013 Addendum-Page 2 (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
*All dimensions are nominal Device Package Type Package Drawing Pins SPQ Reel Diameter (mm) Reel Width W1 (mm) (mm) (mm) (mm) (mm) W (mm) Pin1 Quadrant PACKAGE MATERIALS INFORMATION www.ti.com 8-May-2013 Pack Materials-Page 1
*All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) TS5A22362DGSR VSSOP DGS 10 2500 358.0 335.0 35.0 TS5A22362DRCR SON DRC 10 3000 367.0 367.0 35.0 TS5A22362DRCT-NM SON DRC 10 250 210.0 185.0 35.0 TS5A22362YZPR DSBGA YZP 10 3000 220.0 220.0 34.0 TS5A22364DGSR VSSOP DGS 10 2500 358.0 335.0 35.0 TS5A22364DRCR SON DRC 10 3000 367.0 367.0 35.0 TS5A22364YZPR DSBGA YZP 10 3000 220.0 220.0 34.0 PACKAGE MATERIALS INFORMATION www.ti.com 8-May-2013 Pack Materials-Page 2
D: Max = E: Max = 1.89 mm, Min = 1.39 mm, Min = 1.83 mm 1.33 mm
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