TS555C STMICROELECTRONICS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 12

Technical content

TS555C,I,M LOW POWER SINGLE CMOS TIMERS January 1999 .VERY LOW POWER CONSUMPTION : .100µA typ at VCC =5 V .HIGH MAXIMUM ASTABLE FREQUENCY 2.7MHz .PIN-TO-PIN AND FUNCTIONALLY COMPATIBLE WITH BIPOLAR NE555 .VOLTAGE RANGE : +2V to +18V .HIGH OUTPUT CURRENT CAPABILITY .SUPPLY CURRENT SPIKES REDUCED DURING OUTPUT TRANSITIONS .HIGH INPUT IMPEDANCE : 1012 Ω .OUTPUT COMPATIBLE WITH TTL,CMOS AND LOGIC MOS N DIP8 (Plastic Package) D SO8 (Plastic Micropackage) GND Trigger Output Reset CC ControlVoltage V Discharge Threshold PIN CONNECTIONS (top view) ORDER CODES Part Number Temperature Range Package NDP TS555C 0oC, +70oC lll TS555I -40, +125oC lll TS555M -55, +125oC lll Examples :TS555CD , TS555IN

DESCRIPTION

The TS555 is a single CMOS timer which offers very low consumption (Icc(TYP) TS555 = 100µA Icc(TYP) NE555 = 3mA) and high frequency (f(max.)TS555 = 2.7MHz - f(max.)NE555 = 0.1 MHz) Thus, either in Monostable or Astable mode, timing remains very accurate. The TS555provides reduced supply current spikes during output transitions, which enables the use of lower decoupling capacitors compared to those required by bipolar NE555. Timing capacitors can also be minimized due to high input impedance (10 12 Ω ). P TSSOP8 (Thin Shrink Small Outline Package)

RESET TRIGGER THRESHOLD OUTPUT Low x x Low High Low x High High High High Low High High Low Previous State LOW Ö Level Voltage≤ Min voltage specified HIGH Ö Level Voltage≥ Max voltage specified X Ö Irrelevant ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCC Supply Voltage +18 V TJ Junction Temperature +150 oC THERMAL CHARACTERISTICS Symbol Parameter Value Unit TOPER Operating Temperature Range TS555C TS555I TS555M 0 to +70 -40 to +125 -55 to +125 oC TSTG Storage Temperature Range -65 to +150 oC Output Dis charge Ground Tr igger Control Voltage Thres hold VCC R eset R R R B A R S TS555 BLOCK DIAGRAM TS555C,I,M

50k Ω Τ1 50k Ω 50k Ω 50k Ω 50k Ω 50k Ω Threshold Τ5 Τ6 Τ14 Τ8 Τ9 Τ15 Τ16 Τ17 Τ18 Τ19 Trigger Τ24 Τ22 Τ23 Τ28 Τ29 Τ32 Τ35 Τ33 Discharge Output Τ10 Τ11 Τ12 Τ13 Τ20 Τ21 Τ26 Τ25 Τ27 Τ30 Τ31 Τ34 GND RESET V CC Control Voltage SCHEMATIC DIAGRAM TS555C,I,M

STATIC ELECTRICAL CHARACTERISTICS VCC = +2V, Tamb = +25oC, Reset to VCC (unless otherwise specified) Symbol Parameter TS555C-TS555I-TS555M Unit Min. Typ Max. ICC Supply Current (no load, High and Low States) Tamb =+2 5oC Tmin.≤ Tamb ≤ Tmax . 65 200 200 µA VCL Control Voltage Tamb =+2 5oC Tmin.≤ Tamb ≤ Tmax . 1.2 1.1 1.3 1.4 1.5 V Vdis Discharge Saturation Voltage (Idis= 1mA) Tamb =+2 5oC Tmin.≤ Tamb ≤ Tmax . 0.05 0.2 0.25 V VOL Low Level Output Voltage (Isink= 1mA) Tamb =+2 5oC Tmin.≤ Tamb ≤ Tmax . 0.1 0.3 0.35 V VOH High Level Output Voltage (Isource= -0.3mA) Tamb =+2 5oC Tmin.≤ Tamb ≤ Tmax . 1.5 1.5 1.9 V Vtrig Trigger Voltage Tamb =+2 5oC Tmin.≤ Tamb ≤ Tmax . 0.4 0.3 0.67 0.95 1.05 V Itrig Trigger Current 10 pA ITH Threshold Current 10 pA Vreset Reset Voltage Tamb =+2 5oC Tmin.≤ Tamb ≤ Tmax . 0.4 0.3 1.1 1.5 2.0 V Ireset Reset Current 10 pA Idis Discharge Pin Leakage Current 1 100 nA OPERATING CONDITIONS Symbol Parameter Value Unit VCC Supply Voltage +2 to +16 V TS555C,I,M

STATIC ELECTRICAL CHARACTERISTICS (continued) VCC = +5V, Tamb = +25oC, Reset to VCC (unless otherwise specified) Symbol Parameter TS555C-TS555I-TS555M Unit Min. Typ Max. ICC Supply Current (no load, High and Low States) Tamb =+2 5oC Tmin.≤ Tamb ≤ Tmax . 110 250 250 µA VCL Control Voltage Tamb =+2 5oC Tmin.≤ Tamb ≤ Tmax . 2.9 2.8 3.3 3.8 3.9 V Vdis Discharge Saturation Voltage (Idis= 10mA) Tamb =+2 5oC Tmin.≤ Tamb ≤ Tmax . 0.2 0.3 0.35 V VOL Low Level Output Voltage (Isink= 8mA) Tamb =+2 5oC Tmin.≤ Tamb ≤ Tmax . 0.3 0.6 0.8 V VOH High Level Output Voltage (Isource= -2mA) Tamb =+2 5oC Tmin.≤ Tamb ≤ Tmax . 4.4 4.4 4.6 V Vtrig Trigger Voltage Tamb =+2 5oC Tmin.≤ Tamb ≤ Tmax . 1.36 1.26 1.67 1.96 2.06 V Itrig Trigger Current 10 pA ITH Threshold Current 10 pA Vreset Reset Voltage Tamb =+2 5oC Tmin.≤ Tamb ≤ Tmax . 0.4 0.3 1.1 1.5 2.0 V Ireset Reset Current 10 pA Idis Discharge Pin Leakage Current 1 100 nA TS555C,I,M

STATIC ELECTRICAL CHARACTERISTICS (continued) VCC = +12V, Tamb = +25oC, Reset to VCC (unless otherwise specified) Symbol Parameter TS555C-TS555I-TS555M Unit Min. Typ Max. ICC Supply Current (no load, High and Low States) Tamb =+2 5oC Tmin.≤ Tamb ≤ Tmax . 170 400 400 µA VCL Control Voltage Tamb =+2 5oC Tmin.≤ Tamb ≤ Tmax . 7.4 7.3 8 8.6 8.7 V Vdis Discharge Saturation Voltage (Idis= 80mA) Tamb =+2 5oC Tmin.≤ Tamb ≤ Tmax . 0.09 1.6 2.0 V VOL Low Level Output Voltage (Isink= 50mA) Tamb =+2 5oC Tmin.≤ Tamb ≤ Tmax . 1.2 2 2.8 V VOH High Level Output Voltage (Isource= -10mA) Tamb =+2 5oC Tmin.≤ Tamb ≤ Tmax . 10.5 10.5 V Vtrig Trigger Voltage Tamb =+2 5oC Tmin.≤ Tamb ≤ Tmax . 3.2 3.1 4 4.8 4.9 V Itrig Trigger Current 10 pA ITH Threshold Current 10 pA Vreset Reset Voltage Tamb =+2 5oC Tmin.≤ Tamb ≤ Tmax . 0.4 0.3 1.1 1.5 2.0 V Ireset Reset Current 10 pA Idis Discharge Pin Leakage Current 1 100 nA TS555C,I,M

DYNAMIC ELECTRICAL CHARACTERISTICS Tamb = +25oC, Reset to VCC (unless otherwise specified) Symbol Parameter TS555C-TS555I-TS555M Unit Min Typ Max Timing Accuracy (Monostable) - (note 1) R = 10kΩ , C = 0.1µF VCC =+2 V VCC =+5 V VCC = +12V Timing Shift with supply voltage variations (Monostable) R = 10kΩ , C = 0.1µF, V %/V Timing Shift with temperature Tmin. ≤ Tamb ≤ Tmax.,VCC =+5 V 75 ppm/°C fmax Maximum astable frequency R A = 470Ω ,R B = 200Ω, C = 200pF , VCC = + 5V 2.7 MHz Astable frequency accuracy - (note 2) R A =R B =1 kΩ to 100kΩ ,C=0 .1µF VCC =+5 V VCC = + 12V Timing Shift with supply voltage variations (Astable mode) R A =R B =1 kΩ to 100kΩ , C = 0.1µF, VCC = 5 to+ 12V 0.1 %/V tr Output Rise Time (VCC =+5 V,C load= 10pF) 25 ns tf Output Fall Time (VCC =+5 V,C load= 10pF) 20 - ns tpd Trigger Propagation Delay (VCC = + 5V) 100 ns trpw Minimum Reset Pulse Width (Vtrig= + 5V) 350 ns Notes :1. See Figure 2 2. See Figure 4 TS555C,I,M

8 PINS - PLASTIC DIP

Dimensions Millimeters Inches A 3.32 0.131 a1 0.51 0.020 B 1.15 1.65 0.045 0.065 b 0.356 0.55 0.014 0.022 b1 0.204 0.304 0.008 0.012 D 10.92 0.430 E 7.95 9.75 0.313 0.384 e 2.54 0.100 e3 7.62 0.300 e4 7.62 0.300 F 6.6 0260 i 5.08 0.200 L 3.18 3.81 0.125 0.150 Z 1.52 0.060 TS555C,I,M

8 PINS - PLASTIC MICROPACKAGE (SO)

Dimensions Millimeters Inches A 1.75 0.069 a1 0.1 0.25 0.004 0.010 a2 1.65 0.065 a3 0.65 0.85 0.026 0.033 b 0.35 0.48 0.014 0.019 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.020 c1 45 o (typ.) D 4.8 5.0 0.189 0.197 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 3.81 0.150 F 3.8 4.0 0.150 0.157 L 0.4 1.27 0.016 0.050 M 0.6 0.024 o (max.) TS555C,I,M

8 PINS - THIN SHRINK SMALL OUTLINE PACKAGE

Dim. Millimeters Inches A 1.20 0.05 A1 0.05 0.15 0.01 0.006 b 0.19 0.30 0.007 0.15 c 0.09 0.20 0.003 0.012 E 6.40 0.252 e 0.65 0.025 o 8o 0o 8o Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.STMicroelectronics products are not authorized for useas critical components in life support devices orsystems without express written approval of STMicroelectronics.  The ST logo is a trademark of STMicroelectronics  1999 STMicroelectronics – Printed in Italy – All Rights Reserve d STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.  http://www.st.com TS555C,I,M