TS52001 SEMTECH | Alldatasheet
Document overview
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Technical content
Features
Temperature-independent PV MPPT-Lite™ regulation scheme VBAT reverse current blocking Programmable temperature-compensated termination voltage with +/- 1% tolerance Up to 1.4A of continuous output current in Full Charge Constant-Current (CC) mode User programmable charging current High efficiency – up to 92% at typical load Current mode PWM control in constant voltage Supervisor for VBAT reported at the nFLT pin Input supply under-voltage lockout Full protection for VBAT over-current, over-temp, over- voltage, and charging timeout Charge status indication I2C program interface with EEPROM registers Specification Wide input voltage range: 4.0V to 8.1V Packaged in a 16pin QFN (4x4) Product is lead-free, Halogen Free, RoHS / WEEE compliant
Applications
Portable solar chargers Off-grid systems Wireless sensor networks Smoke detectors
Description
The TS52001 is a DC/DC synchronous switching Li-ion Battery Charger with fully integrated power switches, internal compensation, and full fault protection. The TS52001 utilizes a temperature-independent photovoltaic Maximum Power Point Tracking (MPPT-Lite™) calculator to optimize power output from the source during Full Charge Constant-Current (CC) mode. The switching frequency of 1MHz enables the use of small filter components, resulting in smaller board space and reduced BOM costs. In Full Charge Constant-Current mode the duty cycle is controlled by the MPPT-Lite™ regulator. Once termination voltage is reached, the regulator operates in voltage mode. When the regulator is disabled (EN is low), the device draws 10uA quiescent current. The TS52001 includes supervisory reporting through the nFLT (Inverted Fault) open drain output to interface other components in the system. Device programming is achieved by an I²C interface through SCL and SDA pins. Typical Application Circuit GND EN VTHERM SW nFLT VBAT SCL PGND COUT LOUT RSENSE RREF VIN SDA VTH_REF Photovoltaic Cells VSENSE Battery RTHM RPULLUP (optional) VDD RPULLUP (optional) VDD CIN VDD CVdd TS52001 Figure 1: Photovoltaic Charging Application Circuit
TS52001 www.semtech.com Page 2 of 22 Final Datasheet Rev. 1.3 August 29, 2016 Semtech Pinout TS52001 QFN16 4x4 Top/Symbolization View VIN VSENSE VBAT SW VIN VTH_REF VTHERM SCL SW PGND PGND SDA nFLT EN GND VDD Figure 2: Package Pinout Diagram Pin Description Pin Symbol Pin # Function Description SW 1 Switching Voltage Node Connected to 4.7uH (typical) inductor VIN 2 Photovoltaic Input Voltage Input voltage VSENSE 3 Current Sense Positive Input Positive input for the MPP current loop. VBAT 4 Battery Input Regulator Feedback Input GND 5 GND Primary ground for the majority of the device except the low-side power FET. EN 6 Enable Input Above 2.2V the device is enabled. GND the pin to disable the device. Includes internal pull-up. nFLT 7 Inverted Fault Open-drain output. VDD 8 Internal 3.3V Supply Output Connected to 100nF capacitor to GND VTHERM 9 Battery Temperature Sensor Minus Node Minus node for the thermistor which is located in close proximity to the battery. VTH_REF 10 Battery Temperature Sensor Positive Node Positive node for the thermistor which is located in close proximity to the battery VIN 11 Photovoltaic Input Voltage Input voltage SCL 12 Clock Input I2C clock input. SDA 13 Data Input/Output I2C data open-drain output. SW 14 Switching Voltage Node Connected to 4.7uH (typical) inductor PGND 15 Power GND GND supply for internal low-side FET/integrated diode PGND 16 Power GND GND supply for internal low-side FET/integrated diode
TS52001 www.semtech.com Page 3 of 22 Final Datasheet Rev. 1.3 August 29, 2016 Semtech Functional Block Diagram VIN BATT Current Control Gate Drive Gate Drive Gate Drive Control VBAT SW Oscillator Ramp Generator Comparator Error Amp GND MONITOR CONTROL BATT Thermal Control Over Voltage Protection VBAT VIN VIN Σ EN PGND nFLT COUT LOUT BATT Compensation Network Backgate Blocking VTH_REF VTHERM Photovoltaic Cells ~5V @ 450mA Vref VBAT RTHM RREF RSENSE VSENSE MPP & Current Control I²C Interface SCL SDA VIN CIN VDD CVDD VDD Regulator VIN Figure 3: TS52001 Block Diagram
TS52001 www.semtech.com Page 4 of 22 Final Datasheet Rev. 1.3 August 29, 2016 Semtech Absolute Maximum Rating Over operating free–air temperature range unless otherwise noted (1,2,3) Parameter Range Unit VIN, EN, nFLT, SCL, SDA, VTHERM, VTH_REF, VBAT, VSENSE -0.3 to 8.8 V SW -1 to 8.8 V VDD -0.3 to 3.6 V Operating Junction Temperature Range, TJ -40 to 125 °C Storage Temperature Range, TSTG -65 to 150 °C Electrostatic Discharge – Human Body Model ±2k V Electrostatic Discharge – Machine Model +/-200 V Lead Temperature (soldering, 10 seconds) 260 °C Notes: Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only (1): and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability. All voltage values are with respect to network ground terminal. (2): ESD testing is performed according to the respective JESD22 JEDEC standard. (3): Thermal Characteristics Symbol Parameter Value Unit θJA Thermal Resistance Junction to Air (Note 1) 50 °C/W Note Assumes 4x4 QFN-16 in 1 in2 area of 2 oz copper and 25°C ambient temperature. (1): Recommended Operating Conditions Symbol Parameter Min Typ Max Unit VIN Photovoltaic Input Operating Voltage 4 8.1 V RSENSE Sense Resistor 50 mΩ LOUT Output Filter Inductor Typical Value (Note 1) 4.7 µH COUT Output Filter Capacitor Typical Value (Note 2) 4.7 µF COUT-ESR Output Filter Capacitor ESR 100 mΩ CIN Input Supply Bypass Capacitor Value (Note 3) 3.3 10 µF CVDD VDD Supply Bypass Capacitor Value (Note 2) 70 100 130 nF TA Operating Free Air Temperature -40 85 °C TJ Operating Junction Temperature -40 125 °C Notes: For best performance, an inductor with a saturation current rating higher than the maximum VBAT load requirement plus the inductor (1): current ripple. For best performance, a low ESR ceramic capacitor should be used. (2): For best performance, a low ESR ceramic capacitor should be used. If CIN is not a low ESR ceramic capacitor, a 0.1uF ceramic capacitor (3): should be added in parallel to CIN. Characteristics
TS52001 www.semtech.com Page 5 of 22 Final Datasheet Rev. 1.3 August 29, 2016 Semtech Electrical Characteristics, TJ = -40C to 125C, VIN = 5.3V (unless otherwise noted) Symbol Parameter Condition Min Typ Max Unit VIN Supply Voltage VIN Photovoltaic Voltage Input 4 8.1 V ICC-NORM Quiescent current Normal Mode ILOAD = 0A, no switching 3 mA ICC-DISABLE Quiescent current Disable Mode EN = 0V 10 50 µA VBAT Leakage IBAT-LEAK Leakage Current From Batt EN = 0V, VBAT = 4.1V 10 µA IBAT-BACK Reverse Current VBAT > VIN, VBAT = 4.1V, Tj < 85C 10 µA VIN Under-Voltage Lockout VIN-UV Input Supply Under-Voltage Threshold VIN Increasing 3.15 V VIN-UV_HYST Input Supply Under-Voltage Threshold Hysteresis 100 200 mV OSC FOSC Oscillator Frequency 0.9 1 1.1 MHz nFLT Open Drain Output IOH-nFLT High-Level Output Leakage VnFLT = 5.3V 0.1 µA VOL-nFLT Low-Level Output Voltage InFLT = -1mA 0.4 V EN/SCL/SDA Input Voltage Thresholds VIH High Level Input Voltage 2.2 V VIL Low Level Input Voltage 0.8 V VHYST Input Hysteresis 200 mV IIN-EN Input Leakage VEN=VIN 0.1 µA VEN=0V -2.0 µA IIN-SCL Input Leakage VSCL=VIN 55 µA VSCL=0V -0.1 µA IIN-SDA Input Leakage VSDA=VIN 0.1 µA VSDA=0V -0.1 µA VOL-SDA Low-Level Output Voltage ISDA = -1mA 0.4 V Thermal Shutdown TSD Thermal Shutdown Junction Temperature 150 170 °C TSDHYST TSD Hysteresis 10 °C Pre-Charge End VPreChg Pre-Charge Voltage Threshold 2.9 3.0 3.1 V VPCHYST Pre-Charge Voltage Hysteresis 70 mV Charge Restart VReStart Voltage below termination for charging restart 100 mV Charger Characteristics Electrical Characteristics, TJ = -40C to 125C, VIN = 5.3V (unless otherwise noted)
TS52001 www.semtech.com Page 6 of 22 Final Datasheet Rev. 1.3 August 29, 2016 Semtech Symbol Parameter Condition Min Typ Max Unit Charging Regulator: L=4.7uH and C=4.7uF IBAT-FC Output Current Limit in Full-Charge Mode IBAT = 1.4A IBAT - 10% IBAT IBAT + 10% A VBAT-TO Termination Voltage in Top-Off Mode IBAT = 0.1C, 0C < Tj < 85C VBAT - 1% VBAT VBAT + V tTO Top-Off Mode Time Out 0 120 min tFC Full-Charge Timer 200 1400 min tacc Timer Accuracy -10% +10% RDSON High Side Switch On Resistance ISW = -1A, TJ=25C 200 mΩ Low Side Switch On Resistance ISW = 1A, TJ=25C 250 mΩ IBAT Max Output Current 1.4 A IOCD Over-Current Detect HS switch current 2.5 A VBAT-OV VBAT Over-Voltage Threshold 101% VBAT 102% VBAT 103% VBAT DUTYMAX Max Duty Cycle 98 % I2C Interface Timing Requirements Electrical Characteristics, TJ = -40C to 125C, VIN = 5.3V (unless otherwise noted) Symbol Parameter Standard Mode Fast Mode(1) Unit Min Max Min Max fscl I2C clock frequency 0 100 0 400 kHz tsch I2C clock high time 4 0.6 µs tscl I2C clock low time 4.7 1.3 µs tsp (2) I2C tolerable spike time 0 50 0 50 ns tsds I2C serial data setup time 250 250 ns tsdh I2C serial data hold time 0 0 µs ticr (2) I2C input rise time 1000 300 ns ticf (2) I2C input fall time 300 300 ns tocf (2) I2C output fall time; 10 pF to 400 pF bus 300 300 ns tbuf I2C bus free time between Stop and Start 4.7 1.3 µs tsts I2C Start or repeated Start condition setup time 4.7 0.6 µs tsth I2C Start or repeated Start condition hold time 4 0.6 µs tsps (2) I2C Stop condition setup time 4 0.6 µs Notes: The I²C interface will operate in either standard or fast mode. (1): Parameters not tested in production. (2):
TS52001 www.semtech.com Page 7 of 22 Final Datasheet Rev. 1.3 August 29, 2016 Semtech Thermistor Characteristics Electrical Characteristics, TJ = -40C to 125C, VIN = 5.3V (unless otherwise noted) Symbol Parameter Condition Min Typ Max Unit VVTH_REF VTH_REF output voltage IVT_REF = 2uA-100uA 1.22 V 10KΩ Temperature Thresholds – β=3434K 0°C 0°C Vtherm Threshold (0°C) Decreasing Temperature 75.6 %VTH_REF 0°CHYST 0°C Vtherm Threshold with Hysteresis (10°C) Increasing Temperature 66.5 %VTH_REF 10°C 10°C Vtherm Threshold (10°C) Decreasing Temperature 66.2 %VTH_REF 10°CHYST 10°C Vtherm Threshold with Hysteresis (11°C) Increasing Temperature 65.4 %VTH_REF 45°C 45°C Vtherm Threshold (45°C) Increasing Temperature 34.5 %VTH_REF 45°CHYST 45°C Vtherm Threshold with Hysteresis (44°C) Decreasing Temperature 35.3 %VTH_REF 50°C 50°C Vtherm Threshold (50°C) Increasing Temperature 30.8 %VTH_REF 50°CHYST 50°C Vtherm Threshold with Hysteresis (49°C) Decreasing Temperature 31.5 %VTH_REF 60°C 60°C Vtherm Threshold (60°C) Increasing Temperature 24.9 %VTH_REF 60°CHYST 60°C Vtherm Threshold with Hysteresis (50°C) Decreasing Temperature 30.8 %VTH_REF 100KΩ Temperature Thresholds – β=4311K 0°C 0°C Vtherm Threshold (0°C) Decreasing Temperature 80.5 %VTH_REF 0°CHYST 0°C Vtherm Threshold with Hysteresis (10°C) Increasing Temperature 69.8 %VTH_REF 10°C 10°C Vtherm Threshold (10°C) Decreasing Temperature 69.8 %VTH_REF 10°CHYST 10°C Vtherm Threshold with Hysteresis (11°C) Increasing Temperature 68.6 %VTH_REF 45°C 45°C Vtherm Threshold (45°C) Increasing Temperature 31.3 %VTH_REF 45°CHYST 45°C Vtherm Threshold with Hysteresis (44°C) Decreasing Temperature 32.3 %VTH_REF 50°C 50°C Vtherm Threshold (50°C) Increasing Temperature 27.0 %VTH_REF 50°CHYST 50°C Vtherm Threshold with Hysteresis (49°C) Decreasing Temperature 27.8 %VTH_REF 60°C 60°C Vtherm Threshold (60°C) Increasing Temperature 19.4 %VTH_REF 60°CHYST 60°C Vtherm Threshold with Hysteresis (50°C) Decreasing Temperature 27.0 %VTH_REF
TS52001 www.semtech.com Page 8 of 22 Final Datasheet Rev. 1.3 August 29, 2016 Semtech Functional Description The TS52001 is a fully-integrated Li-Ion battery charger IC based on a highly-efficient switching topology. It includes a Maximum Power Point Tracking (MPPT) function to optimize its input voltage to extract the maximum possible power from a photovoltaic cell. It includes configurability for termination voltage, charge current and a host of other variables to allow optimum charg ing conditions for a wide range of Li-Ion batteries. A 1 MHz internal switching frequency facilitates low -cost LC filter combinations. When the battery voltage is below 3.0 volts, the device will enter a pre- charge state and apply a small, programmable charge current to safely charge the battery to a level for which full charge current can be applied. Once the full charge mode has been initiated, the device will maximize available charge current to the battery by adjusting its duty cycle to regulate its input voltage to the Maximum Power Point (MPP) voltage of the photovoltaic cell. If sufficient current is available from the PV cell to exceed the safe 1C charge rate of the battery, then the programmable 1C current limit function will take precedence over the MPP control function and the PV cell voltage will rise above the MPP value. When the battery voltage has increased enough to go into maintenance mode, the PWM control loop will force a constant voltage across the battery. Once in constant voltage mode, current is monitored to determine when the battery is fully charged. This regulation voltage as well as the 1C charging current can be set to change based on battery temperature. There are 4 temperature ranges where these can be set independently, 0-10°C, 10-45°C, 45-50°C and 50-60°C. The 0°C and 60°C thresholds will stop charging and have 10 degrees of hysteresis. The intermediate points have 1 degree of hysteresis. Internal Protection Details Internal Current Limit The current through the inductor is sensed on a cycle by cycle basis and if current limit is reached, it will abbreviate the cycle. Current limit is always active when the regulator is enabled. Thermal Shutdown If the temperature of the die exceeds 170°C (typical), the SW outputs will tri -state to protect the device from damage. The nFLT and all other protection circuitry will stay active to inform the system of the fa ilure mode. Once the device cools to 160°C (typical), the device will attempt to start up again. If the device reaches 170°C, the shutdown/restart sequence will repeat. VIN Under-Voltage Lockout The device is held in the off state until VIN reaches 3.15V. There is a 200mV hysteresis on this input, which requires the input to fall below 2.95V before the device will disable. Battery Over-Voltage Protection The TS52001 has a battery protection circuit designed to shutdown the charging profile if the battery voltage is greater than the termination voltage. The termination voltage can change based on user programming, so the protection threshold is set to 2% above the termination voltage. Shutting down the charging profile puts the TS52001 in a fault condition.
TS52001 www.semtech.com Page 9 of 22 Final Datasheet Rev. 1.3 August 29, 2016 Semtech Fault Handling nFLT Pin Functionality In the event of a battery over-voltage, the battery temperature being outside of the safe charging range or the full charge timer expiring, charging will stop, and the nFLT pin will be pulled low. When the fault condition is no longer present, the device will enter the INITIALIZE state, but the nFLT pin will remain low until register 0 is read. When the register 0 is read, the nFLT pin will go high until a new fault is detected. Other Faults When an open thermistor, thermal shut down, VIN under-voltage, or top off time-out are detected, charging will immediately stop and the corresponding bit in register 0 will be set. The device will enter the INITIALIZE state until the fault is no longer detected. Serial Interface The TS52001 features an I2C slave interface which offers advanced control and diagnostic features. I2C operation offers configuration control for termination voltages, charge currents, and charge timeouts. This configurability allows for optimum charging conditions in a wide range of Li-Ion batteries. I2C operation also offers fault and warning indicators. Whenever a fault is detected, the associated status bit in the STATUS register is set and the nFLT pin is pulled low. Whenever a warning is detected, the associated status bit in the STATUS register is set, but the nFLT pin is not pulled low. Reading of the STATUS register resets the fault and warning status bits, and the nFLT pin is released after all fault status bits have been reset. I2C Register Address Figure 4: Sub-address in I2C Transmission I2C Bus Operation The TS52001 has a slave I2C interface that supports standard and fast mode data rates, auto-sequencing, and is compliant to I2C standard version 3.0. I 2C is a two-wire serial interface where the two lines are serial clock (SCL) and serial data (SDA). SDA must be connected to a positive supply through an external pull-up resistor. The devices communicating on this bus can drive the SDA line low or release it to high impedance. The device that initiates the I2C transaction becomes the master of the bus. Communication is initiated by the master sending a Start condition, a high-to-low transition on SDA, while the SCL line is high. After the Start condition, the device address byte is sent, most significant bit (MSB) first, including the data direction bit (R/nW). After receiving the valid address byte, the device responds with an acknowledge (ACK). An ACK is a low on SDA during the high of the ACK related clock pulse. On the I2C bus, during each clock pulse only one data bit is transferred. The data on the SDA line must remain stable during the high pulse of the clock period, as changes in the data line at this time are interpreted as Start or Stop control command s. A low-to-high transition on SDA while the SCL input is high, indicates a Stop conditio n and is sent by the master (See Figure 5).
TS52001 www.semtech.com Page 11 of 22 Final Datasheet Rev. 1.3 August 29, 2016 Semtech Figure 7: Charger State Machine Diagram
TS52001 www.semtech.com Page 12 of 22 Final Datasheet Rev. 1.3 August 29, 2016 Semtech Register Description (Device Address = 0x48) Register Address (Hex) Name Default Description 0 00 STATUS 0x00 Status bit register
1 N/A N/A N/A Register not implemented
2 02 CONFIG1(1) EEPROM Configuration register 3 03 CONFIG2(1) EEPROM Configuration register 4 04 CONFIG3(1) EEPROM Configuration register 5 05 CONFIG4(1) EEPROM Configuration register 6 06 CONFIG5(1) EEPROM Configuration register 7-16 N/A N/A N/A Registers not implemented 17 11 CONFIG_ENABLE 0x00 Enable configuration register access 18 12 EEPROM_CTRL(1) 0x00 EEprom control register Note: CONFIG and EEPROM_CTRL registers are only accessible when CONFIG_ENABLE register is written. (1): Status Register (Status) Address – 0x00h DATA BIT D7 D6 D5 D4 D3 D2 D1 D0 FIELD NAME BATT_OV 1C_TO TEMP_0C TEMP_60C TSD TOP_TO VIN_UV TH_OPEN READ/WRITE R R R R R R R R Field Name Bit Definition(2) BATT_OV Battery over-voltage 1C_TO Full charge timer has timed out TEMP_0C Thermistor indicates battery temperature < 0°C TEMP_60C Thermistor indicates battery temperature > 60°C TSD Thermal shutdown TOP_TO Top Off timer has timed out VIN_UV VIN under-voltage TH_OPEN Thermistor Open (battery not present) Note: Faults are defined as BATT_OV, 1C_TO, TEMP_0C, and TEMP_60C. Warnings are defined as TSD, TOP_TO, VIN_UV, and TH_OPEN. Faults (1): cause the nFLT pin to be pulled low, Warnings do not cause the nFLT pin to be pulled low. All status bits are cleared after register read access. nFLT pin will go high impedance (open drain output) after the status register has been read and all status bits have been reset.
TS52001 www.semtech.com Page 13 of 22 Final Datasheet Rev. 1.3 August 29, 2016 Semtech Configuration Register (Config1) Address – 0x02h DATA BIT D7 D6 D5 D4 D3 D2 D1 D0 FIELD NAME PRE_CHRG[1:0] V_TERM_0_10[2:0] V_TERM_10_45[2:0] READ/WRITE R/W R/W R/W R/W R/W R/W R/W R/W FIELD NAME BIT DEFINITION PRE_CHRG1:0 Pre-Charging configuration 00 – 50 mA 01 – 100 mA 10 – 185 mA 11 – 370 mA V_TERM_0_102:0 Voltage Termination 0-10°C configuration 000 – 3.94 V 001 – 4.00 V 010 – 4.05 V 011 – 4.10 V 100 – 4.12 V 101 – 4.15 V 110 – 4.18 V 111 – Invalid Setting V_TERM_10_452:0 Voltage Termination 10-45°C configuration 000 – 3.94 V 001 – 4.00 V 010 – 4.05 V 011 – 4.10 V 100 – 4.12 V 101 – 4.15 V 110 – 4.18 V 111 – Invalid Setting Notes: PRE_CHRG Note: Maximum output current when VBAT < 3.0 V. (1): V_TERM Note: Unique settings available for battery temperatures 0-10°C, 10-45°C, 45-50°C, and 50-60°C. For <0°C and >60°C, charging is (2): disabled and a fault is set.
TS52001 www.semtech.com Page 14 of 22 Final Datasheet Rev. 1.3 August 29, 2016 Semtech Configuration Register (Config2) Address – 0x03h DATA BIT D7 D6 D5 D4 D3 D2 D1 D0 FIELD NAME EOC[1:0] V_TERM_45_50[2:0] V_TERM_50_60[2:0] READ/WRITE R/W R/W R/W R/W R/W R/W R/W R/W FIELD NAME BIT DEFINITION EOC1:0 End of charge configuration 00 – 50 mA 01 – 100 mA 10 – 185 mA 11 – 370 mA V_TERM_45_502:0 Voltage Termination 45-50°C configuration 000 – 3.94 V 001 – 4.00 V 010 – 4.05 V 011 – 4.10 V 100 – 4.12 V 101 – 4.15 V 110 – 4.18 V 111 – Invalid Setting V_TERM_50_602:0 Voltage Termination 50-60°C configuration 000 – 3.94 V 001 – 4.00 V 010 – 4.05 V 011 – 4.10 V 100 – 4.12 V 101 – 4.15 V 110 – 4.18 V 111 – Invalid Setting Notes: EOC Note: Maximum output current when VBAT < 3.0 V. (1): V_TERM Note: Unique settings available for battery temperatures 0-10°C, 10-45°C, 45-50°C, and 50-60°C. For <0°C and >60°C, charging is (2): disabled and a fault is set.
TS52001 www.semtech.com Page 15 of 22 Final Datasheet Rev. 1.3 August 29, 2016 Semtech Configuration Register (Config3) Address – 0x04h DATA BIT D7 D6 D5 D4 D3 D2 D1 D0 FIELD NAME MAX_CHRG_CURR_0_10[3:0] MAX_CHRG_CURR_10_45[3:0] READ/WRITE R/W R/W R/W R/W R/W R/W R/W R/W FIELD NAME BIT DEFINITION MAX_CHRG_CURR_0_103:0 Maximum charge current 0-10°C configuration 0000 – 50 mA 0001 – 100 mA 0010 – 200 mA 0011 – 300 mA 0100 – 400 mA 0101 – 500 mA 0110 – 600 mA 0111 – 700 mA 1000 – 800 mA 1001 – 900 mA 1010 – 1000 mA 1011 – 1100 mA 1100 – 1200 mA 1101 – 1300 mA 1110 – 1400 mA 1111 – Invalid Setting MAX_CHRG_CURR_10_453:0 Maximum charge current 10-45°C configuration 0000 – 50 mA 0001 – 100 mA 0010 – 200 mA 0011 – 300 mA 0100 – 400 mA 0101 – 500 mA 0110 – 600 mA 0111 – 700 mA 1000 – 800 mA 1001 – 900 mA 1010 – 1000 mA 1011 – 1100 mA 1100 – 1200 mA 1101 – 1300 mA 1110 – 1400 mA 1111 – Invalid Setting Note: MAX_CHRG_CURR Note: Unique settings available for battery temperatures 0-10°C, 10-45°C, 45-50°C, and 50-60°C. For <0°C and >60°C, (1): charging is disabled and a fault is set.
TS52001 www.semtech.com Page 16 of 22 Final Datasheet Rev. 1.3 August 29, 2016 Semtech Configuration Register (Config4) Address – 0x05h DATA BIT D7 D6 D5 D4 D3 D2 D1 D0 FIELD NAME MAX_CHRG_CURR_45_50[3:0] MAX_CHRG_CURR_50_60[3:0] READ/WRITE R/W R/W R/W R/W R/W R/W R/W R/W FIELD NAME BIT DEFINITION MAX_CHRG_CURR_45_503:0 Maximum charge current 45-50°C configuration 0000 – 50 mA 0001 – 100 mA 0010 – 200 mA 0011 – 300 mA 0100 – 400 mA 0101 – 500 mA 0110 – 600 mA 0111 – 700 mA 1000 – 800 mA 1001 – 900 mA 1010 – 1000 mA 1011 – 1100 mA 1100 – 1200 mA 1101 – 1300 mA 1110 – 1400 mA 1111 – Invalid Setting MAX_CHRG_CURR_50_603:0 Maximum charge current 50-60°C configuration 0000 – 50 mA 0001 – 100 mA 0010 – 200 mA 0011 – 300 mA 0100 – 400 mA 0101 – 500 mA 0110 – 600 mA 0111 – 700 mA 1000 – 800 mA 1001 – 900 mA 1010 – 1000 mA 1011 – 1100 mA 1100 – 1200 mA 1101 – 1300 mA 1110 – 1400 mA 1111 – Invalid Setting Note: MAX_CHRG_CURR Note: Unique settings available for battery temperatures 0-10°C, 10-45°C, 45-50°C, and 50-60°C. For <0°C and >60°C, (1): charging is disabled and a fault is set.
TS52001 www.semtech.com Page 17 of 22 Final Datasheet Rev. 1.3 August 29, 2016 Semtech Configuration Register (Config5) Address – 0x06h DATA BIT D7 D6 D5 D4 D3 D2 D1 D0 FIELD NAME TOP_END TH TOP_TO[2:0] 1C_TO[2:0] READ/WRITE R/W R/W R/W R/W R/W R/W R/W R/W FIELD NAME BIT DEFINITION TOP_END(1) Top Off end configuration 0 – 25 mA 1 – 92 mA TH(2) Thermistor configuration 0 – 10k Ohms 1 – 100k Ohms TOP_TO2:0 Top Off timer time out configuration 000 – 0 minutes 001 – 20 minutes 010 – 40 minutes 011 – 60 minutes 100 – 80 minutes 101 – 100 minutes 110 – 120 minutes 111 – Disable time out timer 1C_TO2:0 Full charge timer time out configuration 000 – Disable full charge timer 001 – 200 minutes 010 – 400 minutes 011 – 600 minutes 100 – 800 minutes 101 – 1000 minutes 110 – 1200 minutes 111 – 1400 minutes Notes: TOP_END Note: Charging stops when VBAT = Vtermination and IBAT < Top Off end. (1): TH Note: Setting for nominal thermistor and reference resistor value. (2): TOP_TO Note: Timer starts when VBAT= Vtermination and IBAT < EOC. (3): 1C_TO Note: Timer starts when VBAT > 3.0V. (4):
TS52001 www.semtech.com Page 18 of 22 Final Datasheet Rev. 1.3 August 29, 2016 Semtech Enable Configuration Register (Config_Enable) Address – 0x11h DATA BIT D7 D6 D5 D4 D3 D2 D1 D0 FIELD NAME Not used Not used Not used Not used Not used Not used Not used EN_CFG READ/WRITE R R R R R R R R/W RESET VALUE 0 0 0 0 0 0 0 0 FIELD NAME BIT DEFINITION EN_CFG Enable access control bit for configuration registers 2-6 0 – Disable access 1 – Enable access Eeprom Control Register (Eeprom_Ctrl) Address – 0x12h DATA BIT D7 D6 D5 D4 D3 D2 D1 D0 FIELD NAME Not used Not used Not used Not used Not used Not used Not used EE_PROG READ/WRITE R R R R R R R R/W RESET VALUE 0 0 0 0 0 0 0 0 FIELD NAME BIT DEFINITION EE_PROG(1) EEprom program control bit for configuration registers 2-6 0 – Disable EEprom programming 1 – Enable EEprom programming with data from configuration registers 2-6 Note: EE_PROG Note: Inputs VIN and EN must be present for 200 ms. (1): External Component Selection The internal compensation is optimized for a 4.7uF output capacitor and a 4.7uH inductor. To keep the output ripple low, a low ESR (less than 35mOhm) ceramic is recommended.
TS52001 www.semtech.com Page 19 of 22 Final Datasheet Rev. 1.3 August 29, 2016 Semtech Package Mechanical Drawings
TS52001 www.semtech.com Page 20 of 22 Final Datasheet Rev. 1.3 August 29, 2016 Semtech
Ordering Information
Ordering Code Description Package TS52001-QFNR TS52001 High-Efficiency Charger for Li-Ion Batteries 16-pin PQFN Reel (3,300 pcs) Application Using A Multi-Layer PCb To maximize the efficiency of this package for application on a single layer or multi -layer PCB, certain guidelines must be followed when laying out this part on the PCB. The following are guidelines for mounting the exposed pad IC on a Multi -Layer PCB with ground a plane. JEDEC standard FR4 PCB Cross-section: (square) Package Solder Pad Package Solder Pad (bottom trace) Thermal Via Component Traces Thermal Isolation Power plane only 1.5748mm 0.0 - 0.071 mm Board Base & Bottom Pad 0.5246 - 0.5606 mm Power Plane (1oz Cu) 1.0142 - 1.0502 mm Ground Plane (1oz Cu) 1.5038 - 1.5748 mm Component Trace (2oz Cu) 2 Plane
4 Plane
Multi-Layer Board (Cross-sectional View) In a multi-layer board application, the thermal vias are the primary method of heat transfer from the package thermal pad to the internal ground plane. The efficiency of this method depends on several factors, including die area, number of thermal vias, thickness of copper, etc. Package Thermal Pad Solder Pad (Land Pattern) Thermal Via's Package Outline Package and PCB Land Configuration For a Multi-Layer PCB
TS52001 www.semtech.com Page 21 of 22 Final Datasheet Rev. 1.3 August 29, 2016 Semtech Mold compound Die Epoxy Die attach Exposed pad Solder Thermal Vias with Cu plating Single Layer, 2oz Cu Ground Layer, 1oz Cu Signal Layer, 1oz Cu Bottom Layer, 2oz Cu 20% Cu coverage 90% Cu coverage 5% - 10% Cu coverage Note: NOT to Scale The above drawing is a representation of how the heat can be conducted away from the die using an exposed pad package. Each application will have different requirements and limitations and therefore the user should use sufficient copper to dissipate the power in the system. The output current rating for the linear regulators may have to be de- rated for ambient temperatures above 85C. The de-rate value will depend on calculated worst case power dissipation and the thermal management implementation in the application. Application Using A Single Layer PCB Layout recommendations for a Single Layer PCB: utilize as much Copper Area for Power Management. In a single layer board application the thermal pad is attached to a heat spreader (copper areas) by using low thermal impedance attachment method (solder paste or thermal conductive epoxy). In both of the methods mentioned above it is advisable to use as much copper traces as possible to dissipate the heat. Important: If the attachment method is NOT implemented correctly, the functionality of the product is not guar anteed. Power dissipation capability will be adversely affected if the device is incorrectly mounted onto the circuit board. Use as much Copper Area as possible for heat spread Package Thermal Pad Package Outline
TS52001 www.semtech.com Page 22 of 22 Final Datasheet Rev. 1.3 August 29, 2016 Semtech