TS512

TS512 STMICROELECTRONICS | Alldatasheet

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TS512,A HIGH SPEED PRECISION DUAL OPERATIONAL AMPLIFIERS March 1998 .LOW OFFSET VOLTAGE : 500 µV max. .LOW POWER CONSUMPTION .SHORT CIRCUIT PROTECTION .LOW DISTORTION, LOW NOISE .HIGH GAIN-BANDWIDTH PRODUCT .HIGH CHANNEL SEPARATION .ESD INTERNAL PROTECTION .MACROMODEL INCLUDED IN THIS SPECIFICATION Inve rting Input 2 Non-inverting Input 2 Non-inve rting Input 1 -CCV CCV + + - Output 1 Inve rting Input 1 Output PIN CONNECTIONS (top view) ORDER CODES Part Number Temperature Range Package ND TS512I -40, +125 oC •• TS512AI -40, +125 oC •• N DIP8 (Plastic Package) D SO8 (Plastic Micropackage)DESCRIPTION The TS512 is a high performance dual operational amplifier with frequency and phase compensation built intothe chip. The internal phasecompensation allows stable operation as voltage follower in spite of its high gain-bandwidth products. The circuit presents very stable electrical charac- teristics over the entire supply voltage range, and is particularlyintendedfor professionaland telecom applications (active filter, etc).

SCHEMATIC DIAGRAM (1/2 TS512) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCC Supply Voltage ±18 V Vi Input Voltage ±VCC Vid Differential Input Voltage ± (VCC -1 ) Toper Operating Free Air Temperature Range -40 to +125 oC Ptot Power Dissipation at Tamb =7 0oC 500 mW Tj Junction Temperature 150 oC Tstg Storage Temperature Range -65 to +150 oC TS512,A

ELECTRICAL CHARACTERISTICS (VCC = ±15V, Tamb = 25oC, unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICC Supply Current 0.7 1.2 mA Iib Input Bias Current 50 150 nA Tmin.<T op <T max . 300 nA R i Input Resistance f = 1kHz 1 M Ω Vio Input Offset Voltage TS512 TS512A 0.5 2.5 0.5 mV Tmin.<T op <T max . TS512 TS512A 3.5 1.5 mV DV io Input Offset Voltage Drift T min.<T op <T max .2 µV/oC Iio Input Offset Current 5 20 nA Tmin.<T op <T max .4 0 n A DIio Input Offset Current Drift T min.<T op <T max . 0.08 nA Ios Output Short Circuit Current 23 mA Avd Large Signal Voltage Gain R L =2 kΩ VCC = ±15V VCC = ±4V 90 100 dB GBP Gain-bandwidth Product f = 100kHz 1.8 3 MHz en Equivalent Input Noise Voltage f = 1kHz R s =5 0Ω R s =1 kΩ R s = 10kΩ nV √Hz THD Total Harmonic Distortion A V = 20dB R L =2 kΩ VO =2 VPP f = 1kHz 0.03 0.1 % ±Vopp Output Voltage Swing R L =2 kΩ VCC = ±15V VCC = ±4V ±13 V Vopp Large Signal Voltage Swing R L = 10kΩ f = 10kHz 28 V PP SR Slew Rate Unity Gain, R L =2 kΩ 0.8 1.5 V/ µs CMR Common Mode Rejection Ratio V ic= 10V 90 dB SVR Supply Voltage Rejection Ratio V ic= 1V f = 100Hz 90 dB VO1 /VO2 Channel Separation f = 1kHz 100 120 dB TS512,A

.LOW OFFSET VOLTAGE : 500 µV max. .LOW POWER CONSUMPTION .SHORT CIRCUIT PROTECTION .LOW DISTORTION, LOW NOISE .HIGH GAIN-BANDWIDTH PRODUCT .HIGH CHANNEL SEPARATION Standard Linear Ics Macromodels, 1993. CONNECTIONS : * 1 INVERTING INPUT * 2 NON-INVERTING INPUT * 3 OUTPUT * 4 POSITIVEPOWER SUPPLY * 5 NEGATIVE POWER SUPPLY .SUBCKT TS512 1 3 2 4 5 (analog) .MODEL MDTH D IS=1E-8 KF=6.565195E-17 CJO=10F * INPUT STAGE CIP 2 5 1.000000E-12 CIN 1 5 1.000000E-12 EIP 10 5 2 5 1 EIN 16 5 1 5 1 RIP 10 11 2.600000E+01 RIN 15 16 2.600000E+01 RIS 11 15 1.061852E+02 DIP 11 12 MDTH 400E-12 DIN 15 14 MDTH 400E-12 VOFP 12 13 DC 0 VOFN 13 14 DC 0 IPOL 13 5 1.000000E-05 CPS 11 15 12.47E-10 DINN 17 13 MDTH 400E-12 VIN 17 5 1.500000e+00 DINR 15 18 MDTH 400E-12 VIP 4 18 1.500000E+00 FCP 4 5 VOFP 3.400000E+01 FCN 5 4 VOFN 3.400000E+01 FIBP 2 5 VOFN 1.000000E-02 FIBN 5 1 VOFP 1.000000E-02 * AMPLIFYING STAGE FIP 5 19 VOFP 9.000000E+02 FIN 5 19 VOFN 9.000000E+02 RG1 19 5 1.727221E+06 RG2 19 4 1.727221E+06 CC 19 5 6.000000E-09 DOPM 19 22 MDTH 400E-12 DONM 21 19 MDTH 400E-12 HOPM 22 28 VOUT 6.521739E+03 VIPM 28 4 1.500000E+02 HONM 21 27 VOUT 6.521739E+03 VINM 5 27 1.500000E+02 GCOMP 5 4 4 5 6.485084E-04 RPM1 5 80 1E+06 RPM2 4 80 1E+06 GAVPH 5 82 19 80 2.59E-03 RAVPHGH 82 4 771 RAVPHGB 82 5 771 RAVPHDH 82 83 1000 RAVPHDB 82 84 1000 CAVPHH 4 83 0.331E-09 CAVPHB 5 84 0.331E-09 EOUT 26 23 82 5 1 VOUT 23 5 0 ROUT 26 3 6.498455E+01 COUT 3 5 1.000000E-12 DOP 19 25 MDTH 400E-12 VOP 4 25 1.742230E+00 DON 24 19 MDTH 400E-12 VON 24 5 1.742230E+00 .ENDS Applies to : TS512I,AI TS512,A

ELECTRICAL CHARACTERISTICS

VCC = ±15V,Tamb =2 5oC (unless otherwise specified) Symbol Conditions Value Unit Vio 0m V Avd R L =2 kΩ 100 V/mV ICC No load, per operator 350 µA Vicm -13.5 to 13.5 V VOH R L =2 kΩ +13 V VOL R L =2 kΩ -13 V Isink VO =0 V 2 3 m A Isource VO =0 V 2 3 m A GBP R L =2 kΩ, C L = 100pF 3 MHz SR R L =2 kΩ 1.4 V/ms ∅ mR L =2 kΩ, C L = 100pF 55 Degrees TS512,A

8 PINS - PLASTIC DIP

Dim. Millimeters Inches A 3.32 0.131 a1 0.51 0.020 B 1.15 1.65 0.045 0.065 b 0.356 0.55 0.014 0.022 b1 0.204 0.304 0.008 0.012 D 10.92 0.430 E 7.95 9.75 0.313 0.384 e 2.54 0.100 e3 7.62 0.300 e4 7.62 0.300 F 6.6 0260 i 5.08 0.200 L 3.18 3.81 0.125 0.150 Z 1.52 0.060 TS512,A

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics.  1998 SGS-THOMSON Microelectronics – Printed in Italy – All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. PACKAGE MECHANICAL DATA

8 PINS - PLASTIC MICROPACKAGE (SO)

Dim. Millimeters Inches A 1.75 0.069 a1 0.1 0.25 0.004 0.010 a2 1.65 0.065 a3 0.65 0.85 0.026 0.033 b 0.35 0.48 0.014 0.019 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.020 c1 45 o (typ.) D 4.8 5.0 0.189 0.197 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 3.81 0.150 F 3.8 4.0 0.150 0.157 L 0.4 1.27 0.016 0.050 M 0.6 0.024 S8 o (max.) TS512,A