TS421-2

TS419 STMICROELECTRONICS | Alldatasheet

Document overview

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Technical content

■ OPERATING FROM Vcc=2V to 5.5V ■ STANDBY MODE ACTIVE HIGH (TS419) or LOW (TS421) ■ OUTPUT POWER into 16 Ω : 367mW @ 5V with 10% THD+N max or 295mW @5V and 110mW @3.3V with 1% THD+N max. ■ LOW CURRENT CONSUMPTION: 2.5mA max ■ High Signal-to-Noise ratio: 95dB(A) at 5V ■ PSRR: 56dB typ. at 1kHz, 46dB at 217Hz ■ SHORT CIRCUIT LIMITATION ■ ON/OFF click reduction circuitry ■ Available in SO8, MiniSO8 & DFN 3x3

DESCRIPTION

The TS419/TS421 is a monaural audio power am- plifier driving in BTL mode a 16 or 32Ω earpiece or receiver speaker. The main advantage of this con- figuration is to get rid of bulky ouput capacitors. Capable of descending to low voltages, it delivers up to 220mW per channel (into 16Ω loads) of con- tinuous average power with 0.2% THD+N in the audio bandwidth from a 5V power supply. An externally controlled standby mode reduces the supply current to 10nA (typ.). The TS419/ TS421 can be configured by external gain-setting resistors or used in a fixed gain version.

APPLICATIONS

■ 16/32 ohms earpiece or receiver speaker driver ■ Mobile and cordless phones (analog / digital) ■ PDAs & computers ■ Portable appliances ORDER CODE MiniSO & DFN only available in Tape & Reel with T suffix. SO is available in Tube (D) and in Tape & Reel (DT) PIN CONNECTIONS (top view) Part Number Temp. Range: I Package Gain Marking DS Q TS419 -40, +85°C

• external TS419I TS421 • external TS421I TS419 •• external K19A TS419-2 tba tba x2/6dB K19B TS419-4 tba tba x4/12dB K19C TS419-8 tba tba x8/18dB K19D TS421 •• external K21A TS421-2 tba tba x2/6dB K21B TS421-4 tba tba x4/12dB K21C TS421-8 tba tba x8/18dB K21D TS419IDT: SO8 TS419IST, TS419-xIST: MiniSO8 Standby Bypass V+IN VIN- V2OUT GND VCC VOUT1 TS421IDT: SO8 TS421IST, TS421-xIST: MiniSO8 TS419IQT, TS419-xIQT: DFN8 TS421IQT, TS421-xIQT: DFN8 4 5 6STANDBY BYPASS V IN+ Vcc VOUT 1 GND VIN- VOUT 2 4 5 6STANDBY BYPASS V IN+ Vcc VOUT 1 GND VIN- VOUT 2 4 5 6STANDBY BYPASS V IN+ Vcc VOUT 1 GND VIN- VOUT 2 4 5 6STANDBY BYPASS V IN+ Vcc VOUT 1 GND VIN- VOUT 2 TS419 TS421 360mW MONO AMPLIFIER WITH STANDBY MODE June 2003

Symbol Parameter Value Unit VCC Supply voltage 1) 6V Vi Input Voltage -0.3V to VCC +0.3V V Tstg Storage Temperature -65 to +150 °C Tj Maximum Junction Temperature 150 °C R thja Thermal Resistance Junction to Ambient SO8 MiniSO8 DFN8 175 215 °C/W Pd Power Dissipation 2) SO8 MiniSO8 DFN8 0.71 0.58 1.79 W ESD Human Body Model (pin to pin): TS4193), TS421 1.5 kV ESD Machine Model - 220pF - 240pF (pin to pin) 100 V Latch-up Latch-up Immunity (All pins) 200 mA Lead Temperature (soldering, 10sec) 250 °C Output Short-Circuit to Vcc or GND continous 4) 1. All voltage values are measured with respect to the ground pin. 2. Pd has been calculated with Tamb = 25°C, Tjunction = 150°C. 3. TS419 stands 1.5KV on all pins except standby pin which stands 1KV. 4. Attention must be paid to continous power dissipation (VDD x 300mA). Exposure of the IC to a short circuit for an extended time period is dramatically reducing product life expectancy. Symbol Parameter Value Unit VCC Supply Voltage 2 to 5.5 V R L Load Resistor ≥ 16 Ω Toper Operating Free Air Temperature Range -40 to + 85 °C C L Load Capacitor R L = 16 to 100Ω R L > 100Ω 400 100 pF VICM Common Mode Input Voltage Range GND to VCC -1V V VSTB Standby Voltage Input TS421 ACTIVE / TS419 in STANDBY TS421 in STANDBY / TS419 ACTIVE 1.5 ≤ VSTB ≤ VCC GND ≤ VSTB ≤ 0.4 1) V R THJA Thermal Resistance Junction to Ambient SO8 MiniSO8 DFN8 2) 150 190 °C/W Twu Wake-up time from standby to active mode (Cb = 1µF) 3) ≥ 0.12 s 1. The minimum current consumption (ISTANDBY ) is guaranteed at VCC (TS419) or GND (TS421) for the whole temperature range. 2. When mounted on a 4-layer PCB 3. For more details on TWU , please refer to application note section on Wake-up time page 28.

FIXED GAIN VERSION SPECIFIC ELECTRICAL CHARACTERISTICS VCC from +5V to +2V, GND = 0V, Tamb = 25°C (unless otherwise specified) APPLICATION COMPONENTS INFORMATION TYPICAL APPLICATION SCHEMATICS: Symbol Parameter Min. Typ. Max. Unit R IN Input Resistance 20 k Ω G Gain value for Gain TS419/TS421-2 Gain value for Gain TS419/TS421-4 Gain value for Gain TS419/TS421-8 6dB 12dB 18dB dB Components Functional Description R IN Inverting input resistor which sets the closed loop gain in conjunction with RFEED . This resistor also forms a high pass filter with CIN (fcl = 1 / (2 x Pi x RIN x CIN)). Not needed in fixed gain versions. C IN Input coupling capacitor which blocks the DC voltage at the amplifier’s input terminal R FEED Feedback resistor which sets the closed loop gain in conjunction with RIN. AV= Closed Loop Gain= 2xRFEED /RIN. Not needed in fixed gain versions. C S Supply Bypass capacitor which provides power supply filtering. C B Bypass capacitor which provides half supply filtering.

ELECTRICAL CHARACTERISTICS

VCC = +5V, GND = 0V, Tamb = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit ICC Supply Current No input signal, no load 1.8 2.5 mA ISTANDBY Standby Current No input signal, VSTANDBY =GND for TS421 No input signal, VSTANDBY =Vcc for TS419 10 1000 nA Voo Output Offset Voltage No input signal, RL = 16 or 32Ω, Rfeed=20kΩ 52 5m V PO Output Power THD+N = 0.1% Max, F = 1kHz, RL = 32Ω THD+N = 1% Max, F = 1kHz, RL = 32Ω THD+N = 10% Max, F = 1kHz, RL = 32Ω THD+N = 0.1% Max, F = 1kHz, RL = 16Ω THD+N = 1% Max, F = 1kHz, RL = 16Ω THD+N = 10% Max, F = 1kHz, RL = 16Ω 166 240 190 207 258 270 295 367 mW THD + N Total Harmonic Distortion + Noise (A v=2) R L = 32Ω, Pout = 150mW, 20Hz ≤ F ≤ 20kHz R L = 16Ω, Pout = 220mW, 20Hz ≤ F ≤ 20kHz 0.15 0.2 PSRR Power Supply Rejection Ratio (Av=2) 1) F = 1kHz, Vripple = 200mVpp, input grounded, Cb=1µF 1. Guaranteed by design and evaluation. 50 56 dB SNR Signal-to-Noise Ratio (Filter Type A, Av=2) 1) (RL = 32Ω, THD +N < 0.5%, 20Hz ≤ F ≤ 20kHz) 85 98 dB Φ M Phase Margin at Unity Gain RL = 16Ω , CL = 400pF 58 Degrees GM Gain Margin RL = 16Ω , CL = 400pF 18 dB GBP Gain Bandwidth Product RL = 16Ω 1.1 MHz SR Slew Rate RL = 16Ω 0.4 V/ µS

VCC = +3.3V, GND = 0V, Tamb = 25°C (unless otherwise specified) 1) 1. All electrical values are guaranted with correlation measurements at 2V and 5V Symbol Parameter Min. Typ. Max. Unit ICC Supply Current No input signal, no load 1.8 2.5 mA ISTANDBY Standby Current No input signal, VSTANDBY =GND for TS421 No input signal, VSTANDBY =Vcc for TS419 10 1000 nA Voo Output Offset Voltage No input signal, RL = 16 or 32Ω, Rfeed=20kΩ 52 5m V PO Output Power THD+N = 0.1% Max, F = 1kHz, RL = 32Ω THD+N = 1% Max, F = 1kHz, RL = 32Ω THD+N = 10% Max, F = 1kHz, RL = 32Ω THD+N = 0.1% Max, F = 1kHz, RL = 16Ω THD+N = 1% Max, F = 1kHz, RL = 16Ω THD+N = 10% Max, F = 1kHz, RL = 16Ω 102 104 113 143 mW THD + N Total Harmonic Distortion + Noise (Av=2) R L = 32Ω, Pout = 50mW, 20Hz ≤ F ≤ 20kHz R L = 16Ω, Pout = 70mW, 20Hz ≤ F ≤ 20kHz 0.15 0.2 PSRR Power Supply Rejection Ratio inputs grounded, F = 1kHz, Vripple = 200mVpp, Cb=1µF 50 56 dB SNR Signal-to-Noise Ratio (Weighted A, Av=2) (RL = 32Ω, THD +N < 0.5%, 20Hz ≤ F ≤ 20kHz) 82 94 dB Φ M Phase Margin at Unity Gain RL = 16Ω , CL = 400pF 58 Degrees GM Gain Margin RL = 16Ω , CL = 400pF 18 dB GBP Gain Bandwidth Product RL = 16Ω 1.1 MHz SR Slew Rate RL = 16Ω 0.4 V/ µS

VCC = +2.5V, GND = 0V, Tamb = 25°C (unless otherwise specified)1) 1. All electrical values are guaranted with correlation measurements at 2V and 5V Symbol Parameter Min. Typ. Max. Unit ICC Supply Current No input signal, no load 1.7 2.5 mA ISTANDBY Standby Current No input signal, VSTANDBY =GND for TS421 No input signal, VSTANDBY =Vcc for TS419 10 1000 nA Voo Output Offset Voltage No input signal, RL = 16 or 32Ω, Rfeed=20kΩ 52 5m V PO Output Power THD+N = 0.1% Max, F = 1kHz, RL = 32Ω THD+N = 1% Max, F = 1kHz, RL = 32Ω THD+N = 10% Max, F = 1kHz, RL = 32Ω THD+N = 0.1% Max, F = 1kHz, RL = 16Ω THD+N = 1% Max, F = 1kHz, RL = 16Ω THD+N = 10% Max, F = 1kHz, RL = 16Ω mW THD + N Total Harmonic Distortion + Noise (A v=2) R L = 32Ω, Pout = 30mW, 20Hz ≤ F ≤ 20kHz R L = 16Ω, Pout = 40mW, 20Hz ≤ F ≤ 20kHz 0.15 0.2 PSRR Power Supply Rejection Ratio (Av=2) inputs grounded, F = 1kHz, Vripple = 200mVpp, Cb=1µF 50 56 dB SNR Signal-to-Noise Ratio (Weighted A, Av=2) (RL = 32Ω, THD +N < 0.5%, 20Hz ≤ F ≤ 20kHz) 80 91 dB Φ M Phase Margin at Unity Gain RL = 16Ω , CL = 400pF 58 Degrees GM Gain Margin RL = 16Ω , CL = 400pF 18 dB GBP Gain Bandwidth Product RL = 16Ω 1.1 MHz SR Slew Rate RL = 16Ω 0.4 V/ µS

VCC = +2V , GND = 0V, Tamb = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit ICC Supply Current No input signal, no load 1.7 2.5 mA ISTANDBY Standby Current No input signal, VSTANDBY =GND for TS421 No input signal, VSTANDBY =Vcc for TS419 10 1000 nA Voo Output Offset Voltage No input signal, RL = 16 or 32Ω, Rfeed=20kΩ 52 5m V PO Output Power THD+N = 0.1% Max, F = 1kHz, RL = 32Ω THD+N = 1% Max, F = 1kHz, RL = 32Ω THD+N = 10% Max, F = 1kHz, RL = 32Ω THD+N = 0.1% Max, F = 1kHz, RL = 16Ω THD+N = 1% Max, F = 1kHz, RL = 16Ω THD+N = 10% Max, F = 1kHz, RL = 16Ω mW THD + N Total Harmonic Distortion + Noise (A v=2) R L = 32Ω, Pout = 13mW, 20Hz ≤ F ≤ 20kHz R L = 16Ω, Pout = 20mW, 20Hz ≤ F ≤ 20kHz 0.1 0.15 PSRR Power Supply Rejection Ratio (Av=2) 1) inputs grounded, F = 1kHz, Vripple = 200mVpp, Cb=1µF 1. Guaranteed by design and evaluation. 49 54 dB SNR Signal-to-Noise Ratio (Weighted A, Av=2) 1) (RL = 32Ω, THD +N < 0.5%, 20Hz ≤ F ≤ 20kHz) 80 89 dB Φ M Phase Margin at Unity Gain RL = 16Ω , CL = 400pF 58 Degrees GM Gain Margin RL = 16Ω , CL = 400pF 20 dB GBP Gain Bandwidth Product RL = 16Ω 1.1 MHz SR Slew Rate RL = 16Ω 0.4 V/ µS

Note : All measurements made with Rin=20kΩ, Cb=1µF, and Cin=10µF unless otherwise specified. Description Figure Page Common Curves Open Loop Gain and Phase vs Frequency 1 to 12 9 to 10 Current Consumption vs Power Supply Voltage 13 11 Current Consumption vs Standby Voltage 14 to 19 11 to 12 Output Power vs Power Supply Voltage 20 to 23 12 Output Power vs Load Resistor 24 to 27 12 to 13 Power Dissipation vs Output Power 28 to 31 13 to 14 Power Derating vs Ambiant Temperature 32 14 Output Voltage Swing vs Supply Voltage 33 14 Low Frequency Cut Off vs Input Capacitor 34 14 Curves With 6dB Gain Setting (Av=2) THD + N vs Output Power 35 to 43 15 to 16 THD + N vs Frequency 44 to 46 16 Signal to Noise Ratio vs Power Supply Voltage 47 to 48 17 Noise Floor 49 to 50 17 PSRR vs Frequency 51 to 55 17 to 18 Curves With 12dB Gain Setting (Av=4) THD + N vs Output Power 56 to 64 19 to 20 THD + N vs Frequency 65 to 67 20 Signal to Noise Ratio vs Power Supply Voltage 68 to 69 21 Noise Floor 70 to 71 21 PSRR vs Frequency 72 to 76 21 to 22 Curves With 18dB Gain Setting (Av=8) THD + N vs Output Power 77 to 85 23 to 24 THD + N vs Frequency 86 to 88 24 Signal to Noise Ratio vs Power Supply Voltage 89 to 90 25 Noise Floor 91 to 92 25 PSRR vs Frequency 93 to 97 25 to 26

Fig. 1: Open Loop Gain and Phase vs Frequency Fig. 3: Open Loop Gain and Phase vs Frequency Fig. 5: Open Loop Gain and Phase vs Frequency Fig. 2: Open Loop Gain and Phase vs Frequency Fig. 4: Open Loop Gain and Phase vs Frequency Fig. 6: Open Loop Gain and Phase vs Frequency 0.1 1 10 100 1000 10000 -40 -20 -20 100 120 140 160 180 Gain (dB) Frequency (kHz) Vcc = 5V RL = 8Ω Tamb = 25°CGain Phase Phase (Deg) 0.1 1 10 100 1000 10000 -40 -20 -20 100 120 140 160 180 Gain (dB) Frequency (kHz) Vcc = 5V ZL = 8Ω +400pF Tamb = 25°CGain Phase Phase (Deg) 0.1 1 10 100 1000 10000 -40 -20 -20 100 120 140 160 180 Gain (dB) Frequency (kHz) Vcc = 5V RL = 16Ω Tamb = 25°CGain Phase Phase (Deg) 0.1 1 10 100 1000 10000 -40 -20 -20 100 120 140 160 180 Gain (dB) Frequency (kHz) Vcc = 2V RL = 8Ω Tamb = 25°CGain Phase Phase (Deg) 0.1 1 10 100 1000 10000 -40 -20 -20 100 120 140 160 180 Gain (dB) Frequency (kHz) Vcc = 2V ZL = 8Ω +400pF Tamb = 25°CGain Phase Phase (Deg) 0.1 1 10 100 1000 10000 -40 -20 -20 100 120 140 160 180 Gain (dB) Frequency (kHz) Vcc = 2V RL = 16Ω Tamb = 25°CGain Phase Phase (Deg)

Fig. 7: Open Loop Gain and Phase vs Frequency Fig. 9: Open Loop Gain and Phase vs Frequency Fig. 11: Open Loop Gain and Phase vs Frequency Fig. 8: Open Loop Gain and Phase vs Frequency Fig. 10: Open Loop Gain and Phase vs Frequency Fig. 12: Open Loop Gain and Phase vs Frequency 0.1 1 10 100 1000 10000 -40 -20 -20 100 120 140 160 180 Gain (dB) Frequency (kHz) Vcc = 5V ZL = 16Ω +400pF Tamb = 25°CGain Phase Phase (Deg) 0.1 1 10 100 1000 10000 -40 -20 -20 100 120 140 160 180 Gain (dB) Frequency (kHz) Vcc = 5V RL = 32Ω Tamb = 25°CGain Phase Phase (Deg) 0.1 1 10 100 1000 10000 -40 -20 -20 100 120 140 160 180 Gain (dB) Frequency (kHz) Vcc = 5V ZL = 32Ω +400pF Tamb = 25°CGain Phase Phase (Deg) 0.1 1 10 100 1000 10000 -40 -20 -20 100 120 140 160 180 Gain (dB) Frequency (kHz) Vcc = 2V ZL = 16Ω +400pF Tamb = 25°CGain Phase Phase (Deg) 0.1 1 10 100 1000 10000 -40 -20 -20 100 120 140 160 180 Gain (dB) Frequency (kHz) Vcc = 2V RL = 32Ω Tamb = 25°CGain Phase Phase (Deg) 0.1 1 10 100 1000 10000 -40 -20 -20 100 120 140 160 180 Gain (dB) Frequency (kHz) Vcc = 2V ZL = 32Ω +400pF Tamb = 25°CGain Phase Phase (Deg)

Fig. 13: Current Consumption vs Power Supply Voltage Fig. 15: Current Consumption vs Standby Voltage Fig. 17: Current Consumption vs Standby Voltage Fig. 14: Current Consumption vs Standby Voltage Fig. 16: Current Consumption vs Standby Voltage Fig. 18: Current Consumption vs Standby Voltage 012345 0.0 0.5 1.0 1.5 2.0 Ta=85°C Ta=25°C No load Ta=-40°C Current Consumption (mA) Power Supply Voltage (V) 0123 0.0 0.5 1.0 1.5 2.0 Ta=85°C Ta=25°C TS419 Vcc = 3.3V No load Ta=-40°C Current Consumption (mA) Standby Voltage (V) 012345 0.0 0.5 1.0 1.5 2.0 2.5 Ta=85°C Ta=25°C TS421 Vcc = 5V No load Ta=-40°C Current Consumption (mA) Standby Voltage (V) 012345 0.0 0.5 1.0 1.5 2.0 Ta=85°C Ta=25°C TS419 Vcc = 5V No load Ta=-40°C Current Consumption (mA) Standby Voltage (V) 012 0.0 0.5 1.0 1.5 2.0 Ta=85°C Ta=25°C TS419 Vcc = 2V No load Ta=-40°C Current Consumption (mA) Standby Voltage (V) 0123 0.0 0.5 1.0 1.5 2.0 Ta=85°C Ta=25°C TS421 Vcc = 3.3V No load Ta=-40°C Current Consumption (mA) Standby Voltage (V)

Fig. 19: Current Consumption vs Standby Voltage Fig. 21: Output Power vs Power Supply Voltage Fig. 23: Output Power vs Power Supply Voltage Fig. 20: Output Power vs Power Supply Voltage Fig. 22: Output Power vs Power Supply Voltage Fig. 24: Output Power vs Load Resistor 012 0.0 0.5 1.0 1.5 2.0 Ta=85°C Ta=25°C TS421 Vcc = 2V No load Ta=-40°C Current Consumption (mA) Standby Voltage (V) 100 150 200 250 300 350 400 450 500 THD+N=10% THD+N=0.1% RL = 16Ω F = 1kHz BW < 125kHz Tamb = 25°C THD+N=1% Output power (mW) Vcc (V) 100 150 200 THD+N=10% THD+N=0.1% RL = 64Ω F = 1kHz BW < 125kHz Tamb = 25°C THD+N=1% Output power (mW) Vcc (V) 100 150 200 250 300 350 400 450 500 550 THD+N=10% THD+N=0.1% RL = 8Ω F = 1kHz BW < 125kHz Tamb = 25°C THD+N=1% Output power (mW) Vcc (V) 100 150 200 250 300 THD+N=10% THD+N=0.1% RL = 32Ω F = 1kHz BW < 125kHz Tamb = 25°C THD+N=1% Output power (mW) Vcc (V) 8 1 62 43 24 04 85 66 4 100 150 200 250 300 350 400 450 500 THD+N=10% THD+N=0.1% Vcc = 5V F = 1kHz BW < 125kHz Tamb = 25°C THD+N=1% Output power (mW) Load Resistance ()

Fig. 25: Output Power vs Load Resistor Fig. 27: Output Power vs Load Resistor Fig. 29: Power Dissipation vs Output Power Fig. 26: Output Power vs Load Resistor Fig. 28: Power Dissipation vs Output Power Fig. 30: Power Dissipation vs Output Power 8 1 62 43 24 04 85 66 4 100 150 200 THD+N=10% THD+N=0.1% Vcc = 3.3V F = 1kHz BW < 125kHz Tamb = 25°CTHD+N=1% Output power (mW) Load Resistance () 8 1 62 43 24 04 85 66 4 THD+N=10% THD+N=0.1% Vcc = 2V F = 1kHz BW < 125kHz Tamb = 25°CTHD+N=1% Output power (mW) Load Resistance () 0 30 60 90 120 150 100 150 200 250 300 RL=32 Ω RL=8 Ω Vcc=3.3V F=1kHz THD+N<1% RL=16 Ω Power Dissipation (mW) Output Power (mW) 8 1 62 43 24 04 85 66 4 100 THD+N=10% THD+N=0.1% Vcc = 2.5V F = 1kHz BW < 125kHz Tamb = 25°C THD+N=1% Output power (mW) Load Resistance () 0 50 100 150 200 250 300 350 100 200 300 400 500 600 RL=16 Ω RL=8 Ω Vcc=5V F=1kHz THD+N<1% RL=32 Ω Power Dissipation (mW) Output Power (mW) 0 1 02 03 04 05 06 0 100 120 140 RL=32 Ω RL=8 Ω Vcc=2.5V F=1kHz THD+N<1% RL=16 Ω Power Dissipation (mW) Output Power (mW)

Fig. 31: Power Dissipation vs Output Power Fig. 33: Output Voltage Swing For One Amp. vs Power Supply Voltage Fig. 32: Power Derating Curves Fig. 34: Low Frequency Cut Off vs Input Capacitor for fixed gain versions 0 5 10 15 20 25 30 35 100 RL=8 Ω RL=16 Ω RL=32 Ω Vcc=2V F=1kHz THD+N<1% Power Dissipation (mW) Output Power (mW) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 RL=8 Ω RL=32 Ω RL=16 Ω Tamb=25 °C Amps. in BTL VOH & VOL for Vs1 and Vs2 (V) Power Supply Voltage (V) Ω Ω Ω

Fig. 35: THD + N vs Output Power Fig. 37: THD + N vs Output Power Fig. 39: THD + N vs Output Power Fig. 36: THD + N vs Output Power Fig. 38: THD + N vs Output Power Fig. 40: THD + N vs Output Power 1 10 100 1E-3 0.01 0.1 Vcc=5V Vcc=3.3V Vcc=2.5V Vcc=2V RL = 8Ω F = 20Hz Av = 2 Cb = 1µF BW < 22kHz Tamb = 25°C THD + N (%) Output Power (mW) 1 10 100 1E-3 0.01 0.1 Vcc=5VVcc=3.3V Vcc=2.5V Vcc=2V RL = 32Ω F = 20Hz Av = 2 Cb = 1µF BW < 22kHz Tamb = 25°C THD + N (%) Output Power (mW) 1 10 100 0.01 0.1 Vcc=5VVcc=3.3V Vcc=2.5V Vcc=2V RL = 16Ω F = 1kHz Av = 2 Cb = 1µF BW < 125kHz Tamb = 25°C THD + N (%) Output Power (mW) 1 10 100 1E-3 0.01 0.1 Vcc=5VVcc=3.3V Vcc=2.5V Vcc=2V RL = 16Ω F = 20Hz Av = 2 Cb = 1µF BW < 22kHz Tamb = 25°C THD + N (%) Output Power (mW) 1 10 100 0.01 0.1 Vcc=5VVcc=3.3V Vcc=2.5V Vcc=2V RL = 8Ω F = 1kHz Av = 2 Cb = 1µF BW < 125kHz Tamb = 25°C THD + N (%) Output Power (mW) 1 10 100 1E-3 0.01 0.1 Vcc=5VVcc=3.3V Vcc=2.5V Vcc=2V RL = 32Ω F = 1kHz Av = 2 Cb = 1µF BW < 125kHz Tamb = 25°C THD + N (%) Output Power (mW)

Fig. 41: THD + N vs Output Power Fig. 43: THD + N vs Output Power Fig. 45: THD + N vs Frequency Fig. 42: THD + N vs Output Power Fig. 44: THD + N vs Frequency Fig. 46: THD + N vs Frequency 1 10 100 0.1 Vcc=5VVcc=3.3V Vcc=2.5V Vcc=2V RL = 8Ω F = 20kHz Av = 2 Cb = 1µF BW < 125kHz Tamb = 25°C THD + N (%) Output Power (mW) 1 10 100 0.1 Vcc=5VVcc=3.3V Vcc=2.5V Vcc=2V RL = 32Ω F = 20kHz Av = 2 Cb = 1µF BW < 125kHz Tamb = 25°C THD + N (%) Output Power (mW) 100 1000 10000 0.01

0.1 Vcc=2V, Po=20mW

Vcc=5V, Po=220mW RL=16 Ω Av=2 Cb = 1µF Bw < 125kHz Tamb = 25°C 20k20 THD + N (%) Frequency (Hz) 1 10 100 0.1 Vcc=5VVcc=3.3V Vcc=2.5V Vcc=2V RL = 16Ω F = 20kHz Av = 2 Cb = 1µF BW < 125kHz Tamb = 25°C THD + N (%) Output Power (mW) 100 1000 10000 0.01 0.1 Vcc=2V, Po=28mW Vcc=5V, Po=300mW RL=8 Ω Av=2 Cb = 1µF Bw < 125kHz Tamb = 25°C 20k20 THD + N (%) Frequency (Hz) 100 1000 10000 0.01 0.1 Vcc=2V, Po=13mW Vcc=5V, Po=150mW RL=32 Ω Av=2 Cb = 1µF Bw < 125kHz Tamb=25 °C 20k20 THD + N (%) Frequency (Hz)

Fig. 47: Signal to Noise Ratio vs Power Supply Voltage with Unweighted Filter (20Hz to 20kHz) Fig. 49: Noise Floor Fig. 51: PSRR vs Input Capacitor Fig. 48: Signal to Noise Ratio vs Power Supply Voltage with Weighted Filter Type A Fig. 50: Noise Floor Fig. 52: PSRR vs Power Supply Voltage 100 Av = 2 Cb = 1µF THD+N < 0.5% Tamb = 25°C RL=32 Ω RL=16 Ω RL=8 Ω Signal to Noise Ratio (dB) Power Supply Voltage (V) 100 1000 10000 Standby=OFF Standby=ON RL>=16 Ω Vcc=5V Av=2 Cb = 1µF Input Grounded Bw < 125kHz Tamb=25 °C 20k20 Noise Floor (VRms) Frequency (Hz) 100 1000 10000 100000 -70 -60 -50 -40 -30 -20 -10 Cin = 100nF Cin = 1µF, 220nF Vripple = 200mVpp Av = 2, Vcc = 5V Input = grounded Cb = 1µF, Rin = 20kΩ RL >= 16Ω Tamb = 25°C PSRR (dB) Frequency (Hz) 100 105 Av = 2 Cb = 1µF THD+N < 0.5% Tamb = 25°C RL=32 Ω RL=16 Ω RL=8 Ω Signal to Noise Ratio (dB) Power Supply Voltage (V) 100 1000 10000 Standby=OFF Standby=ON RL>=16 Ω Vcc=2V Av=2 Cb = 1µF Input Grounded Bw < 125kHz Tamb=25 °C 20k20 Noise Floor (VRms) Frequency (Hz) 100 1000 10000 100000 -80 -70 -60 -50 -40 -30 -20 -10 Vcc = 2V Vcc = 5V, 3.3V & 2.5V Vripple = 100mVrms Rfeed = 20kΩ Input = floating Cb = 1µF RL >= 16Ω Tamb = 25°C PSRR (dB) Frequency (Hz)

Fig. 53: PSRR vs Bypass Capacitor Fig. 55: PSRR vs Bypass Capacitor Fig. 54: PSRR vs Bypass Capacitor 100 1000 10000 100000 -70 -60 -50 -40 -30 -20 -10 Vcc = 2V Vcc = 5V, 3.3V & 2.5V Vripple = 200mVpp Av = 2 Input = Grounded Cb = Cin = 1µF RL >= 16Ω Tamb = 25°C PSRR (dB) Frequency (Hz) 100 1000 10000 100000 -70 -60 -50 -40 -30 -20 -10 Vcc = 2V Vcc = 5V, 3.3V & 2.5V Vripple = 200mVpp Av = 2 Input = Grounded Cb = 10µF Cin = 1µF RL >= 16Ω Tamb = 25°C PSRR (dB) Frequency (Hz) 100 1000 10000 100000 -70 -60 -50 -40 -30 -20 -10 Vcc = 2V Vcc = 5V, 3.3V & 2.5V Vripple = 200mVpp Av = 2 Input = Grounded Cb = 4.7µF Cin = 1µF RL >= 16Ω Tamb = 25°C PSRR (dB) Frequency (Hz)

Fig. 56: THD + N vs Output Power Fig. 58: THD + N vs Output Power Fig. 60: THD + N vs Output Power Fig. 57: THD + N vs Output Power Fig. 59: THD + N vs Output Power Fig. 61: THD + N vs Output Power 1 10 100 0.01 0.1 Vcc=5VVcc=3.3V Vcc=2.5V Vcc=2V RL = 8Ω F = 20Hz Av = 4 Cb = 1µF BW < 22kHz Tamb = 25°C THD + N (%) Output Power (mW) 1 10 100 1E-3 0.01 0.1 Vcc=5VVcc=3.3V Vcc=2.5V Vcc=2V RL = 32Ω F = 20Hz Av = 4 Cb = 1µF BW < 22kHz Tamb = 25°C THD + N (%) Output Power (mW) 1 10 100 0.01 0.1 Vcc=5VVcc=3.3V Vcc=2.5V Vcc=2V RL = 16Ω F = 1kHz Av = 4 Cb = 1µF BW < 125kHz Tamb = 25°C THD + N (%) Output Power (mW) 1 10 100 1E-3 0.01 0.1 Vcc=5VVcc=3.3V Vcc=2.5V Vcc=2V RL = 16Ω F = 20Hz Av = 4 Cb = 1µF BW < 22kHz Tamb = 25°C THD + N (%) Output Power (mW) 1 10 100 0.01 0.1 Vcc=5VVcc=3.3V Vcc=2.5V Vcc=2V RL = 8Ω F = 1kHz Av = 4 Cb = 1µF BW < 125kHz Tamb = 25°C THD + N (%) Output Power (mW) 1 10 100 1E-3 0.01 0.1 Vcc=5VVcc=3.3V Vcc=2.5V Vcc=2V RL = 32Ω F = 1kHz Av = 4 Cb = 1µF BW < 125kHz Tamb = 25°C THD + N (%) Output Power (mW)

Fig. 62: THD + N vs Output Power Fig. 64: THD + N vs Output Power Fig. 66: THD + N vs Frequency Fig. 63: THD + N vs Output Power Fig. 65: THD + N vs Frequency Fig. 67: THD + N vs Frequency 1 10 100 Vcc=5VVcc=3.3V Vcc=2.5V Vcc=2V RL = 8Ω F = 20kHz Av = 4 Cb = 1µF BW < 125kHz Tamb = 25°C THD + N (%) Output Power (mW) 1 10 100 0.1 Vcc=5VVcc=3.3V Vcc=2.5V Vcc=2V RL = 32Ω F = 20kHz Av = 4 Cb = 1µF BW < 125kHz Tamb = 25°C THD + N (%) Output Power (mW) 100 1000 10000 0.01 0.1 Vcc=2V, Po=20mW Vcc=5V, Po=220mW RL=16 Ω Av=4 Cb = 1µF Bw < 125kHz Tamb = 25°C 20k20 THD + N (%) Frequency (Hz) 1 10 100 0.1 Vcc=5VVcc=3.3V Vcc=2.5V Vcc=2V RL = 16Ω F = 20kHz Av = 4 Cb = 1µF BW < 125kHz Tamb = 25°C THD + N (%) Output Power (mW) 100 1000 10000 0.01 0.1 Vcc=2V, Po=28mW Vcc=5V, Po=300mW RL=8 Ω Av=4 Cb = 1µF Bw < 125kHz Tamb = 25°C 20k20 THD + N (%) Frequency (Hz) 100 1000 10000 0.01 0.1 Vcc=2V, Po=13mW Vcc=5V, Po=150mW RL=32 Ω Av=4 Cb = 1µF Bw < 125kHz Tamb=25 °C 20k20 THD + N (%) Frequency (Hz)

Fig. 68: Signal to Noise Ratio vs Power Supply Voltage with Unweighted Filter (20Hz to 20kHz) Fig. 70: Noise Floor Fig. 72: PSRR vs Power Supply Voltage Fig. 69: Signal to Noise Ratio vs Power Supply Voltage with Weighted Filter Type A Fig. 71: Noise Floor Fig. 73: PSRR vs Input Capacitor Av = 4 Cb = 1µF THD+N < 0.5% Tamb = 25°C RL=32 Ω RL=16 Ω RL=8 Ω Signal to Noise Ratio (dB) Power Supply Voltage (V) 100 1000 10000 Standby=OFF Standby=ON RL>=16 Ω Vcc=5V Av=4 Cb = 1µF Input Grounded Bw < 125kHz Tamb=25 °C 20k20 Noise Floor (VRms) Frequency (Hz) 100 1000 10000 100000 -80 -70 -60 -50 -40 -30 -20 -10 Vcc = 2V Vcc = 5V, 3.3V & 2.5V Vripple = 100mVrms Rfeed = 40kΩ Input = floating Cb = 1µF RL >= 16Ω Tamb = 25°C PSRR (dB) Frequency (Hz) 100 Av = 4 Cb = 1µF THD+N < 0.5% Tamb = 25°C RL=32 Ω RL=16 Ω RL=8 Ω Signal to Noise Ratio (dB) Power Supply Voltage (V) 100 1000 10000 Standby=OFF Standby=ON RL>=16 Ω Vcc=2V Av=4 Cb = 1µF Input Grounded Bw < 125kHz Tamb=25 °C 20k20 Noise Floor (VRms) Frequency (Hz) 100 1000 10000 100000 -60 -50 -40 -30 -20 -10 Cin = 100nF Cin = 1µF, 220nF Vripple = 200mVpp Av = 4, Vcc = 5V Input = grounded Cb = 1µF, Rin = 20kΩ RL >= 16Ω Tamb = 25°C PSRR (dB) Frequency (Hz)

Fig. 74: PSRR vs Bypass Capacitor Fig. 76: PSRR vs Bypass Capacitor Fig. 75: PSRR vs Bypass Capacitor 100 1000 10000 100000 -60 -50 -40 -30 -20 -10 Vcc = 2V Vcc = 5V, 3.3V & 2.5V Vripple = 200mVpp Av = 4 Input = Grounded Cb = Cin = 1µF RL >= 16Ω Tamb = 25°C PSRR (dB) Frequency (Hz) 100 1000 10000 100000 -60 -50 -40 -30 -20 -10 Vcc = 2V Vcc = 5V, 3.3V & 2.5V Vripple = 200mVpp Av = 4 Input = Grounded Cb = 10µF Cin = 1µF RL >= 16Ω Tamb = 25°C PSRR (dB) Frequency (Hz) 100 1000 10000 100000 -60 -50 -40 -30 -20 -10 Vcc = 2V Vcc = 5V, 3.3V & 2.5V Vripple = 200mVpp Av = 4 Input = Grounded Cb = 4.7µF Cin = 1µF RL >= 16Ω Tamb = 25°C PSRR (dB) Frequency (Hz)

Fig. 77: THD + N vs Output Power Fig. 79: THD + N vs Output Power Fig. 81: THD + N vs Output Power Fig. 78: THD + N vs Output Power Fig. 80: THD + N vs Output Power Fig. 82: THD + N vs Output Power 1 10 100 0.01 0.1 Vcc=5V Vcc=3.3V Vcc=2.5V Vcc=2V RL = 8Ω F = 20Hz Av = 8 Cb = 1µF BW < 22kHz Tamb = 25°C THD + N (%) Output Power (mW) 1 10 100 0.01 0.1 Vcc=5VVcc=3.3V Vcc=2.5V Vcc=2V RL = 32Ω F = 20Hz Av = 8 Cb = 1µF BW < 22kHz Tamb = 25°C THD + N (%) Output Power (mW) 1 10 100 0.01 0.1 Vcc=5VVcc=3.3V Vcc=2.5V Vcc=2V RL = 16Ω F = 1kHz Av = 8 Cb = 1µF BW < 125kHz Tamb = 25°C THD + N (%) Output Power (mW) 1 10 100 0.01 0.1 Vcc=5VVcc=3.3V Vcc=2.5V Vcc=2V RL = 16Ω F = 20Hz Av = 8 Cb = 1µF BW < 22kHz Tamb = 25°C THD + N (%) Output Power (mW) 1 10 100 0.01 0.1 Vcc=5VVcc=3.3V Vcc=2.5V Vcc=2V RL = 8Ω F = 1kHz Av = 8 Cb = 1µF BW < 125kHz Tamb = 25°C THD + N (%) Output Power (mW) 1 10 100 0.01 0.1 Vcc=5VVcc=3.3V Vcc=2.5V Vcc=2V RL = 32Ω F = 1kHz Av = 8 Cb = 1µF BW < 125kHz Tamb = 25°C THD + N (%) Output Power (mW)

Fig. 83: THD + N vs Output Power Fig. 85: THD + N vs Output Power Fig. 87: THD + N vs Frequency Fig. 84: THD + N vs Output Power Fig. 86: THD + N vs Frequency Fig. 88: THD + N vs Frequency 1 10 100 Vcc=5VVcc=3.3V Vcc=2.5V Vcc=2V RL = 8Ω , F = 20kHz Av = 8, Cb = 1µF BW < 125kHz, Tamb = 25°C THD + N (%) Output Power (mW) 1 10 100 0.1 Vcc=5VVcc=3.3V Vcc=2.5V Vcc=2V RL = 32Ω F = 20kHz Av = 8 Cb = 1µF BW < 125kHz Tamb = 25°C THD + N (%) Output Power (mW) 100 1000 10000 0.01 0.1 Vcc=2V, Po=20mW Vcc=5V, Po=220mW RL=16 Ω Av=8 Cb = 1µF Bw < 125kHz Tamb = 25°C 20k20 THD + N (%) Frequency (Hz) 1 10 100 Vcc=5VVcc=3.3V Vcc=2.5V Vcc=2V RL = 16Ω F = 20kHz Av = 8 Cb = 1µF BW < 125kHz Tamb = 25°C THD + N (%) Output Power (mW) 100 1000 10000 0.1 Vcc=2V, Po=28mW Vcc=5V, Po=300mW RL=8 Ω Av=8 Cb = 1µF Bw < 125kHz Tamb = 25°C 20k20 THD + N (%) Frequency (Hz) 100 1000 10000 0.01 0.1 Vcc=2V, Po=13mW Vcc=5V, Po=150mW RL=32 Ω Av=8 Cb = 1µF Bw < 125kHz Tamb=25 °C 20k20 THD + N (%) Frequency (Hz)

Fig. 89: Signal to Noise Ratio vs Power Supply Voltage with Unweighted Filter (20Hz to 20kHz) Fig. 91: Noise Floor Fig. 93: PSRR vs Power Supply Voltage Fig. 90: Signal to Noise Ratio vs Power Supply Voltage with Weighted Filter Type A Fig. 92: Noise Floor Fig. 94: PSRR vs Input Capacitor Av = 8 Cb = 1µF THD+N < 0.5% Tamb = 25°C RL=32 Ω RL=16 Ω RL=8 Ω Signal to Noise Ratio (dB) Power Supply Voltage (V) 100 1000 10000 Standby=OFF Standby=ON RL>=16 Ω Vcc=5V Av=8 Cb = 1µF Input Grounded Bw < 125kHz Tamb=25 °C 20k20 Noise Floor (VRms) Frequency (Hz) 100 1000 10000 100000 -70 -60 -50 -40 -30 -20 -10 Vcc = 2V Vcc = 5V, 3.3V & 2.5V Vripple = 100mVrms Rfeed = 80kΩ Input = floating Cb = 1µF RL >= 16Ω Tamb = 25°C PSRR (dB) Frequency (Hz) Av = 8 Cb = 1µF THD+N < 0.5% Tamb = 25°C RL=32 Ω RL=16 Ω RL=8 Ω Signal to Noise Ratio (dB) Power Supply Voltage (V) 100 1000 10000 Standby=OFF Standby=ON RL>=16 Ω Vcc=2V Av=8 Cb = 1µF Input Grounded Bw < 125kHz Tamb=25 °C 20k20 Noise Floor (VRms) Frequency (Hz) 100 1000 10000 100000 -50 -40 -30 -20 -10 Cin = 100nF Cin = 1µF, 220nF Vripple = 200mVpp Av = 8, Vcc = 5V Input = grounded Cb = 1µF, Rin = 20kΩ RL >= 16Ω Tamb = 25°C PSRR (dB) Frequency (Hz)

Fig. 95: PSRR vs Bypass Capacitor Fig. 97: PSRR vs Bypass Capacitor Fig. 96: PSRR vs Bypass Capacitor 100 1000 10000 100000 -50 -40 -30 -20 -10 Vcc = 2V Vcc = 5V, 3.3V & 2.5V Vripple = 200mVpp Av = 8 Input = Grounded Cb = Cin = 1µF RL >= 16Ω Tamb = 25°C PSRR (dB) Frequency (Hz) 100 1000 10000 100000 -60 -50 -40 -30 -20 -10 Vcc = 2V Vcc = 5V, 3.3V & 2.5V Vripple = 200mVpp Av = 8 Input = Grounded Cb = 10µF Cin = 1µF RL >= 16Ω Tamb = 25°C PSRR (dB) Frequency (Hz) 100 1000 10000 100000 -60 -50 -40 -30 -20 -10 Vcc = 2V Vcc = 5V, 3.3V & 2.5V Vripple = 200mVpp Av = 8 Input = Grounded Cb = 4.7µF Cin = 1µF RL >= 16Ω Tamb = 25°C PSRR (dB) Frequency (Hz)

APPLICATION INFORMATION

■ BTL Configuration Principle The TS419 & TS420 are monolithic power amplifiers with a BTL output type. BTL (Bridge Tied Load) means that each end of the load is connected to two single-ended output amplifiers. Thus, we have: Single ended output 1 = Vout1 = Vout (V) Single ended output 2 = Vout2 = -Vout (V) And Vout1 - Vout2 = 2Vout (V) The output power is : For the same power supply voltage, the output power in BTL configuration is four times higher than the output power in single ended configuration. ■ Gain In Typical Application Schematic (cf. page 3 of TS419-TS421 datasheet) In the flat region (no CIN effect), the output voltage of the first stage is: For the second stage : Vout2 = -Vout1 (V) The differential output voltage is The differential gain named gain (Gv) for more convenient usage is : Remark : Vout2 is in phase with Vin and Vout1 is phased 180° with Vin. This means that the positive terminal of the loudspeaker should be connected to Vout2 and the negative to Vout1. ■ Low and high frequency response In the low frequency region, CIN starts to have an effect. CIN forms with RIN a high-pass filter with a -3dB cut off frequency . In the high frequency region, you can limit the bandwidth by adding a capacitor (Cfeed) in parallel with Rfeed. It forms a low-pass filter with a -3dB cut off frequency . ■ Power dissipation and efficiency Hypothesis:

• Load voltage and current are sinusoidal (Vout and Iout)
• Supply voltage is a pure DC source (Vcc) Regarding the load we have: and and Then, the average current delivered by the supply voltage is: The power delivered by the supply voltage is: Psupply = Vcc Icc AVG (W) Then, the power dissipated by the amplifier is: Pdiss = Psupply - Pout (W) and the maximum value is obtained when: and its value is: Remark : This maximum value is only dependent upon power supply voltage and load values. )W(R )Vout2(Pout L RMS= )V(Rin RfeedVin1Vout −= )V(Rin RfeedVin21Vout2Vout =− Rin Rfeed2Vin 1Vout2VoutGv =−= (Hz)RinCin2 1FCL π= )Hz(CfeedRfeed2 1FCH π= )V(tsinVV PEAKOUT ω= )A(R VI L OUT OUT = )W(R2 VP L PEAK OUT = )A(R V2Icc L PEAK AVG π= )W(PP R Vcc22Pdiss OUTOUT L π Pdiss OUT )W( R Vcc2maxPdiss L π

The efficiency is the ratio between the output power and the power supply The maximum theoretical value is reached when Vpeak = Vcc, so ■ Decoupling of the circuit Two capacitors are needed to bypass properly the TS419/TS421. A power supply bypass capacitor C S and a bias voltage bypass capacitor CB. C S has particular influence on the THD+N in the high frequency region (above 7kHz) and an indirect influence on power supply disturbances. With 1µF, you can expect similar THD+N performances to those shown in the datasheet. In the high frequency region, if C S is lower than 1µF, it increases THD+N and disturbances on the power supply rail are less filtered. On the other hand, if C S is higher than 1µF, those disturbances on the power supply rail are more filtered. C B has an influence on THD+N at lower frequencies, but its function is critical to the final result of PSRR (with input grounded and in the lower frequency region). If C B is lower than 1µF, THD+N increases at lower frequencies and PSRR worsens. If C B is higher than 1µF, the benefit on THD+N at lower frequencies is small, but the benefit to PSRR is substantial. Note that C IN has a non-negligible effect on PSRR at lower frequencies. The lower the value of CIN, the higher the PSRR. ■ Wake-up Time: TWU When standby is released to put the device ON, the bypass capacitor C B will not be charged immediatly. As CB is directly linked to the bias of the amplifier, the bias will not work properly until the CB voltage is correct. The time to reach this voltage is called wake-up time or TWU and typically equal to: T WU =0.15xCB (s) with CB in µF. Due to process tolerances, the range of the wake-up time is : 0.12xCb < TWU < 0.18xCB (s) with CB in µF Note : When the standby command is set, the time to put the device in shutdown mode is a few microseconds. ■ Pop performance Pop performance is intimately linked with the size of the input capacitor Cin and the bias voltage bypass capacitor C The size of CIN is dependent on the lower cut-off frequency and PSRR values requested. The size of C B is dependent on THD+N and PSRR values requested at lower frequencies. Moreover, CB determines the speed with which the amplifier turns ON. The slower the speed is, the softer the turn ON noise is. The charge time of C B is directly proportional to the internal generator resistance 150kΩ .. Then, the charge time constant for CB is τB = 150kΩ xC B (s) As C B is directly connected to the non-inverting input (pin 2 & 3) and if we want to minimize, in amplitude and duration, the output spike on Vout1 (pin 5), C IN must be charged faster than CB. The equivalent charge time constant of CIN is: τIN = (Rin+Rfeed)xCIN (s) Thus we have the relation: τIN < τB (s) Proper respect of this relation allows to minimize the pop noise. Remark : Minimizing CIN and CB benefits both the pop phenomena, and the cost and size of the application. ■ Application : Differential inputs BTL power amplifier. The schematic on figure 98, shows how to design the TS419/21 to work in a differential input mode. The gain of the amplifier is: In order to reach optimal performances of the differential function, R1 and R 2 should be matched at 1% max. Vcc4 V plysupP P PEAKOUT π==η %5.784 =π VDIFF R R2G =

Fig. 98 : Differential Input Amplifier Configuration Input capacitance C can be calculated by the following formula using the -3dB lower frequency required. (F L is the lower frequency required) Note : This formula is true only if: is ten times lower than FL. The following bill of material is an example of a differential amplifier with a gain of 2 and a -3dB lower cuttoff frequency of about 80Hz. Components : F FR C Lπ Designator Part Type R1 20k / 1% R2 20k / 1% C 100nF C B=C S 1µF U1 TS419/21 )Hz(C942000 B CB

DIM. mm. inch A 1.35 1.75 0.053 0.069 A1 0.10 0.25 0.04 0.010 A2 1.10 1.65 0.043 0.065 B 0.33 0.51 0.013 0.020 C 0.19 0.25 0.007 0.010 D 4.80 5.00 0.189 0.197 E 3.80 4.00 0.150 0.157 e 1.27 0.050 H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.40 1.27 0.016 0.050 k ˚ (max.) ddd 0.1 0.04 SO-8 MECHANICAL DATA 0016023/C

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