TS3USB221RSER

TS3USB221_08 TI | Alldatasheet

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(TOP VIEW) 1 10 2 9 3 8 4 7 VCC S OE 1D+ 1D– 2D+ 2D– GND 5 6 RSE PACKAGE (TOP VIEW) 1 10 VCC S OE 1D+ 1D– 2D+ 2D– GND 5 6 RSE PACKAGE (BOTTOM VIEW) 110 VCC S OE 1D+ 1D– 2D+ 2D– GND TS3USB221 www.ti.com SCDS220F NOVEMBER 2006 REVISED NOVEMBER 2008 HIGH-SPEED USB 2.0 (480-Mbps) 1:2 MULTIPLEXER/DEMULTIPLEXER SWITCH WITH SINGLE ENABLE V CC Operation at 2.5 V and 3.3 V V I/O Accepts Signals up to 5.5 V 1.8-V Compatible Control-Pin Inputs Low-Power Mode When OE Is Disabled µ r ON Ω Maximum Δ r ON 0.2 Ω Typical C io(on) pF Maximum Low Power Consumption (30 µ A Maximum) ESD 2000-V Human-Body Model (HBM) High Bandwidth (1.1 GHz Typical) Routes Signals for USB 1.0, 1.1, and 2.0 Mobile Industry Processor Interface (MIPI) Signal Routing ORDERING INFORMATION The TS3USB221 is a high-bandwidth switch specially designed for the switching of high-speed USB 2.0 signals in handset and consumer applications, such as cell phones, digital cameras, and notebooks with hubs or controllers with limited USB I/Os. The wide bandwidth (1.1 GHz) of this switch allows signals to pass with minimum edge and phase distortion. The device multiplexes differential outputs from a USB host device to one of two corresponding outputs. The switch is bidirectional and offers little or no attenuation of the high-speed signals at the outputs. It is designed for low bit-to-bit skew and high channel-to-channel noise isolation, and is compatible with various standards, such as high-speed USB 2.0 (480 Mbps). Please be aware that an important notice concerning availability, standard warranty, and use in critical sheet. PRODUCTION DATA information is current as of publication date. Copyright 2006 2008, Texas Instruments Incorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

1D− 1D+ 2D− 2D+ S OE A EN (see Note A) B Charge Pump VCC TS3USB221 SCDS220F NOVEMBER 2006 REVISED NOVEMBER 2008 www.ti.com ORDERING INFORMATION T A PACKAGE (1) (2) ORDERABLE PART NUMBER TOP-SIDE MARKING QFN RSE Reel of 3000 TS3USB221RSER L5O C to C SON DRC Reel of 3000 TS3USB221DRCR ZWG (1) Package drawings, thermal data, and symbolization are available at www.ti.com/packaging (2) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI website at www.ti.com PIN

DESCRIPTION

S Select input D Bus A nD Bus B TRUTH TABLE S OE FUNCTION X H Disconnect L L D H L D SIMPLIFIED SCHEMATIC, EACH FET SWITCH (SW) EN is the internal enable signal applied to the switch. Submit Documentation Feedback Copyright 2006 2008, Texas Instruments Incorporated Product Folder Link(s): TS3USB221

(1) RECOMMENDED OPERATING CONDITIONS (1) TS3USB221 www.ti.com SCDS220F NOVEMBER 2006 REVISED NOVEMBER 2008 over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT V CC Supply voltage range 0.5 4.6 V V IN Control input voltage range (2) (3) 0.5 V V I/O Switch I/O voltage range (2) (3) (4) 0.5 V I IK Control input clamp current V IN mA I I/OK I/O port clamp current V I/O mA I I/O ON-state switch current (5) 120 mA Continuous current through V CC or GND 100 mA DRC package 48.7 θ JA Package thermal impedance (6) C/W RSE package 243 T stg Storage temperature range 150 C (1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) All voltages are with respect to ground, unless otherwise specified. (3) The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed. (4) V I and V O are used to denote specific conditions for V I/O (5) I I and I O are used to denote specific conditions for I I/O (6) The package thermal impedance is calculated in accordance with JESD 51-7. MIN MAX UNIT V CC Supply voltage 2.3 3.6 V V CC 2.3 V to 2.7 V 0.46 V CC 5.5 V IH High-level control input voltage V V CC 2.7 V to 3.6 V 0.46 V CC 5.5 V CC 2.3 V to 2.7 V 0.25 V CC V IL Low-level control input voltage V V CC 2.7 V to 3.6 V 0.25 V CC V I/O Data input/output voltage 5.5 V T A Operating free-air temperature C (1) All unused control inputs of the device must be held at V CC or GND to ensure proper device operation. Refer to the TI application report, Implications of Slow or Floating CMOS Inputs literature number SCBA004. Copyright 2006 2008, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Link(s): TS3USB221

(1) DYNAMIC ELECTRICAL CHARACTERISTICS TS3USB221 SCDS220F NOVEMBER 2006 REVISED NOVEMBER 2008 www.ti.com over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP (2) MAX UNIT V IK V CC 3.6 2.7 I I mA 1.8 V Control I IN V CC 3.6 2.7 V IN V to 3.6 V µ A inputs V CC 3.6 2.7 V IN V CC or GND, I OZ (3) µ A V O V to 3.6 V I Switch OFF V I/O V to 3.6 V I (OFF) V CC V µ A V I/O V to 2.7 V V CC 3.6 2.7 I I/O I CC µ A V IN V CC or GND, Switch ON or OFF I CC V CC 3.6 2.7 Switch disabled (low power µ A V IN V CC or GND OE in high state) mode) V CC 3.6 V Control One input at 1.8 Δ I CC (4) µ A inputs Other inputs at V CC or GND V CC 2.7 V 0.5 Control C in V CC 3.3 2.5 V IN 3.3 V or V pF inputs C io(OFF) V CC 3.3 2.5 V I/O 3.3 V or Switch OFF pF C io(ON) V CC 3.3 2.5 V I/O 3.3 V or Switch ON pF V I I O mA r on (5) V CC 2.3 V Ω V I 2.4 I O mA V I I O mA 0.2 Δ r on V CC 2.3 V Ω V I 1.7, I O mA 0.2 V I I O mA r on(flat) V CC 2.3 V Ω V I 1.7, I O mA (1) V IN and I IN refer to control inputs. V I V O I I and I O refer to data pins. (2) All typical values are at V CC 3.3 V (unless otherwise noted), T A (3) For I/O ports, the parameter I OZ includes the input leakage current. (4) This is the increase in supply current for each input that is at the specified TTL voltage level, rather than V CC or GND. (5) Measured by the voltage drop between the A and B terminals at the indicated current through the switch. ON-state resistance is determined by the lower of the voltages of the two or terminals. over operating range, T A C to V CC 3.3 V 10%, GND V PARAMETER TEST CONDITIONS TYP (1) UNIT X TALK Crosstalk R L Ω f 250 MHz dB O IRR OFF isolation R L Ω f 250 MHz dB BW Bandwidth dB) R L Ω 1.1 GHz (1) For Max or Min conditions, use the appropriate value specified under Electrical Characteristics for the applicable device type. Submit Documentation Feedback Copyright 2006 2008, Texas Instruments Incorporated Product Folder Link(s): TS3USB221

www.ti.com SCDS220F NOVEMBER 2006 REVISED NOVEMBER 2008 over operating range, T A C to V CC 2.5 V 10%, GND V PARAMETER TEST CONDITIONS TYP (1) UNIT X TALK Crosstalk R L Ω f 250 MHz dB O IRR OFF isolation R L Ω f 250 MHz dB BW Bandwidth dB) R L Ω 1.1 GHz (1) For Max or Min conditions, use the appropriate value specified under Electrical Characteristics for the applicable device type. over operating range, T A C to V CC 3.3 V 10%, GND V PARAMETER MIN TYP (1) MAX UNIT t pd Propagation delay (2) (3) 0.25 ns S to nD t ON Line enable time ns OE to nD S to nD t OFF Line disable time ns OE to nD t SK(O) Output skew between center port to any other port (2) 0.1 0.2 ns t SK(P) Skew between opposite transitions of the same output PHL t PLH (2) 0.1 0.2 ns (1) For Max or Min conditions, use the appropriate value specified under Electrical Characteristics for the applicable device type. (2) Specified by design (3) The bus switch contributes no propagational delay other than the RC delay of the on resistance of the switch and the load capacitance. The time constant for the switch alone is of the order of 0.25 ns for 10-pF load. Since this time constant is much smaller than the rise/fall times of typical driving signals, it adds very little propagational delay to the system. Propagational delay of the bus switch, when used in a system, is determined by the driving circuit on the driving side of the switch and its interactions with the load on the driven side. over operating range, T A C to V CC 2.5 V 10%, GND V PARAMETER MIN TYP (1) MAX UNIT t pd Propagation delay (2) (3) 0.25 ns S to nD t ON Line enable time ns OE to nD S to nD t OFF Line disable time ns OE to nD t SK(O) Output skew between center port to any other port (2) 0.1 0.2 ns t SK(P) Skew between opposite transitions of the same output PHL t PLH (2) 0.1 0.2 ns (1) For Max or Min conditions, use the appropriate value specified under Electrical Characteristics for the applicable device type. (2) Specified by design (3) The bus switch contributes no propagational delay other than the RC delay of the on resistance of the switch and the load capacitance. The time constant for the switch alone is of the order of 0.25 ns for 10-pF load. Since this time constant is much smaller than the rise/fall times of typical driving signals, it adds very little propagational delay to the system. Propagational delay of the bus switch, when used in a system, is determined by the driving circuit on the driving side of the switch and its interactions with the load on the driven side. Copyright 2006 2008, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Link(s): TS3USB221

–120 –100 –80 –60 –40 –20 Frequency (Hz) Attenuation (dB) V = 2.5 VCC V = 3.3 VCC Frequency (Hz) Gain (dB) V = 2.5 VCC V = 3.3 VCC –120 –100 –80 –60 –40 –20 Frequency (Hz) Attenuation (dB) V = 2.5 VCC V = 3.3 VCC 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 V (V)IN r ( )on Ω V = 2.3 VCC V = 3.0 VCC 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 V (V)IN r on Ω V = 2.3 VCC V = 3.0 VCC TS3USB221 SCDS220F NOVEMBER 2006 REVISED NOVEMBER 2008 www.ti.com Figure Gain vs Frequency Figure OFF Isolation vs Frequency Figure Crosstalk vs Frequency Figure r on vs V IN OUT mA) Figure r on vs V IN OUT mA) Submit Documentation Feedback Copyright 2006 2008, Texas Instruments Incorporated Product Folder Link(s): TS3USB221

Time ( 10 ) (s)X Differential Signal (V) 0.0 –0.5 0.5 –0.4 0.4 –0.3 0.3 –0.2 0.2 –0.1 0.1 0.0 Time ( 10 ) (s)X Differential Signal (V) 0.0 –0.5 0.5 –0.4 0.4 –0.3 0.3 –0.2 0.2 –0.1 0.1 0.0 Time ( 10 ) (s)X Differential Signal (V) 0.0 –0.5 0.5 –0.4 0.4 –0.3 0.3 –0.2 0.2 –0.1 0.1 0.0 TS3USB221 www.ti.com SCDS220F NOVEMBER 2006 REVISED NOVEMBER 2008 Figure Eye Pattern: 480-Mbps USB Signal With No Figure Eye Pattern: 480-Mbps USB Signal With Switch Switch (Through Path) NC Path Figure Eye Pattern: 480-Mbps USB Signal With Switch NO Path Copyright 2006 2008, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Link(s): TS3USB221

C L(2) R L VIN VCC GND 1D or 2D VOUT1 or VOUT2 VCTRL 1D or 2D D Logic Input(1) VCOM 500 W R L C L 50 pFtON TEST V+500 W 50 pFtOFF 50% tON tOFF 50% 90% 90% Logic Input (VI) 1.8 V Switch Output (VOUT1 or VOUT2 ) C L(2) R L S (1) All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 W , tr < 5 ns, tf < 5 ns. (2) C L includes probe and jig capacitance. VOH VOL D VOUT1 VIN Channel OFF: 1D to D Network Analyzer Setup Source Power = 0 dBm (632-mV P-P at 50-/C0087 load) DC Bias = 350 mV 50 /C0087 VCC GND 50 /C0087 50 /C0087 Network Analyzer Source Signal VCTRL VCTRL = VCC or GND S TS3USB221 SCDS220F NOVEMBER 2006 REVISED NOVEMBER 2008 www.ti.com Figure Turn-On ON and Turn-Off Time OFF Figure 10. OFF Isolation ISO Submit Documentation Feedback Copyright 2006 2008, Texas Instruments Incorporated Product Folder Link(s): TS3USB221

Channel ON: 1D to D Network Analyzer Setup Source Power = 0 dBm (632-mV P-P at 50-/C0087 load) DC Bias = 350 mV 50 /C0087 VCC GND VOUT2 Source Signal Channel OFF: 2D to D Network Analyzer VCTRL VCTRL = VCC or GND S VCC GND VCTRL D 50 /C0087 50 /C0087 VOUT1 VIN Channel ON: 1D to D Network Analyzer Setup Source Power = 0 dBm (632-mV P-P at 50-/C0087 load) DC Bias = 350 mV Network Analyzer Source Signal VCTRL = VCC or GND S 400 mV TS3USB221 www.ti.com SCDS220F NOVEMBER 2006 REVISED NOVEMBER 2008 PARAMETER MEASUREMENT INFORMATION (continued) Figure 11. Crosstalk TALK Figure 12. Bandwidth (BW) Figure 13. Propagation Delay Copyright 2006 2008, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Link(s): TS3USB221

800□mV 800□mV 400□mV 400□mV 50% 50% 50% 50% 50% 50%50% 50% 50% OUTPUT□SKEW□tSK(P) PULSE□SKEW□tSK(P) t = t tSK(P) PHL PLH| – | t = t tSK(O) PLH1 PLH2| – | or | – | t tPHL1 PHL2 Input Input Output Output□2 Output□1 VOL VOL VOL VOH VOH VOH tPLH tSK(O) tSK(O) tPHL2tPLH2 tPLH1 tPHL1 tPHL VCC IIN ron /C0043 VIN /C0042VOUT2 or VOUT1 IIN /C0087 GND Channel ON VCTRL D VIN VCTRL = VIH or VIL VOUT2 VOUT1 S TS3USB221 SCDS220F NOVEMBER 2006 REVISED NOVEMBER 2008 www.ti.com PARAMETER MEASUREMENT INFORMATION (continued) Figure 14. Skew Test Figure 15. ON-State Resistance on Submit Documentation Feedback Copyright 2006 2008, Texas Instruments Incorporated Product Folder Link(s): TS3USB221

VCTRL = VIH or VIL VCC GND VCTRL D VIN VOUT2 VOUT1 S VCC GND VBIAS VCTRL VCTRL = VCC or GND VBIAS = VCC or GND Capacitance is measured at 1D, 2D, D, and S inputs during ON and OFF conditions. Capacitance Meter VIN VOUT2 VOUT1 D S TS3USB221 www.ti.com SCDS220F NOVEMBER 2006 REVISED NOVEMBER 2008 PARAMETER MEASUREMENT INFORMATION (continued) Figure 16. OFF-State Leakage Current Figure 17. Capacitance Copyright 2006 2008, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Link(s): TS3USB221

Orderable Device Status(1) Package Type Package Drawing Pins Package Qty Eco Plan(2) Lead/Ball FinishMSL Peak Temp (3) TS3USB221DRCR ACTIVE SON DRC 10 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TS3USB221DRCRG4 ACTIVE SON DRC 10 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TS3USB221RSER ACTIVE UQFN RSE 10 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TS3USB221RSERG4 ACTIVE UQFN RSE 10 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM (1)The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2)Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontentfor the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS):TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt):This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br):TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. PACKAGE OPTION ADDENDUM www.ti.com 5-Jan-2010 Addendum-Page 1

*All dimensions are nominal Device Package Type Package Drawing Pins SPQ Reel Diameter (mm) Reel Width W1 (mm) (mm) (mm) (mm) (mm) W (mm) Pin1 Quadrant PACKAGE MATERIALS INFORMATION www.ti.com 8-Dec-2009 Pack Materials-Page 1

*All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) TS3USB221DRCR SON DRC 10 3000 346.0 346.0 29.0 TS3USB221DRCR SON DRC 10 3000 370.0 355.0 55.0 TS3USB221RSER UQFN RSE 10 3000 220.0 205.0 50.0 PACKAGE MATERIALS INFORMATION www.ti.com 8-Dec-2009 Pack Materials-Page 2

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