TS13003_13 TSC | Alldatasheet
Document overview
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- PDF pages: 5
Technical content
Features
- High Voltage
- High Speed Switching Block Diagram Structure
- Silicon Triple Diffused Type
- NPN Silicon Transistor
Ordering Information
Part No. Package Packing TS13003CT B0 TO-92 1Kpcs / Bulk TS13003CT B0G TO-92 1Kpcs / Bulk TS13003CT A3 TO-92 2Kpcs / Ammo TS13003CT A3G TO-92 2Kpcs / Ammo Note: “G” denote for Halogen free Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 700 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 9 V Collector Current DC IC 1.5 A Pulse 3 Total Power Dissipation @ Tc= 25 oC P TOT 1.5 W Operating Junction Temperature T J +150 oC Operating Junction and Storage Temperature Range T STG - 55 to +150 oC Thermal Performance Parameter Symbol Limit Unit Junction to Ambient Thermal Resistance R ӨJA 122 oC/W Pin Definition : 1. Emitter 2. Collector 3. Base
High Voltage NPN Transistor 2/5 Version: I13 Electrical Specifications (Ta = 25 oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Collector-Base Voltage I C = 1mA, I B = 0 BV CBO 700 -- -- V Collector-Emitter Breakdown Voltage IC = 10mA, I E = 0 BV CEO 400 -- -- V Emitter-Base Breakdown Voltage I E = 1mA, I C = 0 BV EBO 9 -- -- V Collector Cutoff Current V CB = 700V, I E = 0 I CBO -- -- 1 uA Emitter Cutoff Current V EB = 9V, I C = 0 I EBO -- -- 1 uA Collector-Emitter Saturation Voltage * IC / I B = 0.5A / 0.1A IC / I B = 1.0A / 0.25A IC / I B = 1.5A / 0.5A VCE(SAT)1 VCE(SAT)2 VCE(SAT)3 0.25 0.5 1.2 0.5 V Base-Emitter Saturation Voltage * IC / I B = 0.5A / 0.1A IC / I B = 1.0A / 0.25A VBE(SAT)1 VBE(SAT)2 1.2 V DC Current Gain * VCE = 5V, I C = 10mA VCE = 10V, I C = 400mA VCE = 2V, I C = 1A hFE Dynamic Characteristics Frequency V CE = 10V, I C = 0.1A f T 4 -- -- MHz Output Capacitance V CB = 10V, f = 0.1MHz Cob -- 21 -- pF Resistive Load Switching Time (Ratings) Delay Time V CC = 125V, I C = 1A, IB1 = IB2 = 0.2A, tp = 25uS Duty Cycle ≤1% td -- 0.05 0.2 uS Rise Time tr -- 0.5 1 uS Storage Time tSTG -- 2 4 uS Fall Time tf -- 0.4 0.7 uS * Note : pulse test: pulse width ≤300uS, duty cycle ≤2%
High Voltage NPN Transistor 4/5 Version: I13 TO-92 Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code (A =Jan, B =Feb, C =Mar, D =Apl, E=May, F=Jun, G =Jul, H =Aug, I=Sep, J=Oct, K =Nov, L=Dec) = Month Code for Halogen Free Product (O =Jan, P=Feb, Q =Mar, R =Apl, S=May, T=Jun, U =Jul, V=Aug, W =Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code
High Voltage NPN Transistor 5/5 Version: I13 Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.