TS13002A_09 TSC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 5
Technical content
Features
- High Voltage
- High Speed Switching Structure
- Silicon Triple Diffused Type
- NPN Silicon Transistor
Ordering Information
Part No. Package Packing TS13002ACT B0 TO-92 1Kpcs / Bulk TS13002ACT B0G TO-92 1Kpcs / Bulk TS13002ACT A3 TO-92 2Kpcs / Ammo TS13002ACT A3G TO-92 2Kpcs / Ammo Note: “G” denote for Green Product Block Diagram Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 700V V Collector-Emitter Voltage VCEO 400V V Emitter-Base Voltage VEBO 9 V DC 0.3 Collector Current Pulse IC 0.5 A Collector Power Dissipation PD 0.6 W Operating Junction Tem perature TJ +150 oC Operating Junction and Storage Temperature Range TSTG - 55 to +150 oC Thermal Performance Parameter Symbol Limit Unit Junction to Ambient Thermal Resistance RӨJA 122 oC/W Pin Definition: 1. Emitter 2. Collector 3. Base
High Voltage NPN Transistor 2/5 Version: E07 Electrical Specifications (Ta = 25oC unless otherwise noted ) Parameter Conditions Symbol Min Typ Max Unit Static Collector-Base Voltage IC = 1mA, IB = 0 BVCBO 700 -- -- V Collector-Emitter Breakdown Voltage IC = 10mA, IE = 0 BVCEO 400 -- -- V Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 BVEBO 9 -- -- V Collector Cutoff Current VCB = 700V, IE = 0 ICBO -- -- 1 uA Emitter Cutoff Current VEB = 7V, IC = 0 IEBO -- -- 1 uA Collector-Emitter Saturation Voltage IC / IB = 50mA / 10mA IC / IB = 100mA / 10mA IC / IB = 200mA / 20mA VCE(SAT)1 VCE(SAT)2 VCE(SAT)3 0.2 0.45 0.4 1.5 V Base-Emitter Saturation Voltage IC / IB = 50mA / 10mA IC / IB = 100mA / 10mA VBE(SAT)1 VBE(SAT)2 1.2 V DC Current Gain VCE = 10V, IC = 10mA VCE = 10V, IC = 100mA VCE = 10V, IC = 280mA hFE1 hFE2 hFE3 Dynamic Frequency VCE = 10V, IC = 0.1A fT 4 -- -- MHz Output Capacitance VCB = 10V, f = 0.1MHz Cob -- 21 -- pF Resistive Load Switching Time (Ratings) Rise Time tr -- 1.1 -- uS Storage Time tSTG -- 2 4 uS Fall Time VCC = 125V, IC = 100mA, IB1 = IB2 = 20mA, tp = 25uS Duty Cycle ≤1% tf -- 0.2 0.7 uS Note : pulse test: pulse width ≤5mS, duty cycle ≤10%
High Voltage NPN Transistor 4/5 Version: E07 TO-92 Mechanical Drawing Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code TO-92 DIMENSION MILLIMETERS INCHES DIM MIN MAX MIN MAX A 4.30 4.70 0.169 0.185 B 4.30 4.70 0.169 0.185 C 13.53 (typ) 0.532 (typ) D 0.39 0.49 0.015 0.019 E 1.18 1.28 0.046 0.050 F 3.30 3.70 0.130 0.146 G 1.27 1.31 0.050 0.051 H 0.33 0.43 0.013 0.017
High Voltage NPN Transistor 5/5 Version: E07 Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its be half, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. E xcept as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life -saving, or life -sustaining applications. Customers using or sel ling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.