TS13001 TSC | Alldatasheet
Document overview
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Technical content
Features
High voltage . High speed switching Structure Silicon triple diffused type. NPN silicon transistor
Ordering Information
Part No. Packing Package TS13001CT Bulk TO-92 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage V CBO 500V V Collector-Emitter Voltage V CEO 400V V Emitter-Base Voltage V EBO 9 V DC 0.1 Collector Current Pulse IC 0.3 A Collector Power Dissipation TO-92 P D 0.6 W Operating Junction Temperature T J +150 oC Operating Junction and Storage Temperature Range T STG - 55 to +150 oC Note: 1. Single pulse, Pw = 5mS, Duty <= 10%
Electrical Characteristics
Ta = 25 oC unless otherwise noted Parameter Conditions Symbol Min Typ Max Unit Static Collector-Base Voltage I C = 10mA, IB = 0 BV CBO 500 -- -- V Collector-Emitter Breakdown Voltage I C = 10mA, IE = 0 BV CEO 400 -- -- V Emitter-Base Breakdown Voltage I E = 1mA, IC = 0 BV EBO 9 -- -- V Collector Cutoff Current V CB = 500V, IE = 0 I CBO -- -- 100 uA Emitter Cutoff Current V EB = 7V, IC = 0 I EBO -- -- 0.01 uA Collector-Emitter Saturation Voltage I C / IB = 50mA / 10mA V CE(SAT) -- -- 0.5 V DC Current Gain V CE = 5V, IC = 20mA h FE 10 -- 40 Output Capacitance V CB = 10V, f = 0.1MHz Cob -- 4 -- pF Storage Time ts -- -- 2.0 Fall Time VCE = 250V, IC = 5 Ib, Ib1=Ib2=40mA tf -- -- 0.8 uS Note : pulse test: pulse width <=5mS, duty cycle <=10%
TS13001 2-2 2003/12 rev. B TO-92 Mechanical Drawing C D A B H E F G TO-92 DIMENSION MILLIMETERS INCHES DIM MIN MAX MIN MAX A 4.30 4.70 0.169 0.185 B 4.30 4.70 0.169 0.185 C 14.30(typ) 0.563(typ) D 0.43 0.49 0.017 0.019 E 2.19 2.81 0.086 0.111 F 3.30 3.70 0.130 0.146 G 2.42 2.66 0.095 0.105 H 0.37 0.43 0.015 0.017