TS120S ZSELEC | Alldatasheet

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! Schottky Barrier Chip ! Low Power Loss, High Efficiency ! Plastic Case Material has UL Flammability /G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01 Mechanical Da ta Maximum Rat ings and Electrical Characteristics @TA=25°C unl ess otherwise specified Peak Repet itive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR RMS Revers e Voltage VR(RMS) Average Rec tified Output Current @T L = 90°C IO Non-Repetit ive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) I FSM 30 A Forward V oltage @I F = 1 .0A V FM Peak Revers e Current @T A = 25°C A t Rated DC Blocking Voltage @T A = 100°C IRM 0.1 20 mA R/G01JL R/G01JA 50 °C/W Operati ng T emperature Range Tj -65 to +150 °C S torage T emperature Range TSTG -65 to +150 °C Note: 1. M ounted on P.C. Board with 5.0mm2 copper pad area. 1 of 2 TS120S – TS1250S Typi cal Thermal Resistance (Note 1) jC 110 30 110 pF Ch aracteristic Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com - + H D E A J MICRO DIP/TDI/SOPA-4/ABS Dim Min Max A 4.80 5.30 B 4.20 4.60 C 0.15 0.25 D —0 . 2 0 E G 0.30 0.70 H 0.90 1.10 J K L Al l Dimensions in mm 6.00 6.80 K B G —1 . 5 0 1.22 1.72 3.80 4.20 H ig h S u r g e C u r r e n t C a p a b i l i t y ! Case: MICOR DIP,TDI,SOPA-4, ABS, Molded Plastic MIL-STD-202, Method 208 MIL-STD-202, Method 208 ! Polarity: As Marked on Case ! Mounting Position: Any ! Marking: Type Number ! Lead Free: For RoHS / Lead Free Version Terminals: Plated Leads Solderable per UnitTS TS TS TS TS TS TS TS TS 130S 140S 150S 160S 180S 1100S 1150S 1200S 1250S

TS120S – TS1250S TS120S – TS1250S 0.01 0.1 1.0 0 0.4 0.8 1.2 I, INST ANTANEOUS FORWARD CURRENT (A) F V , INSTA NTANEOUS FWD VOLTAGE (V) Fig. 2 Typ. Forward Characteristics F 20-40 50-60 T - 25ºCj I Pulse Width = 300 sF µ 100 1000 0.1 1 10 100 C , JUNCTION CAP ACITANCE (pF) j V , REVERSE VOL T AGE (V) Fig. 4 Typical Junction Capacitance R T = 25°C

1 MHz

j 0 20 40 60 80 100 120 140 I , INST ANTANEOUS REVERSE CURRENT (mA) R PERCENT OF RA TED PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics T = 100ºCj T = 75ºCj T = 25ºCj 100 1.0 0.1 0.01 0.001 1.0 25 50 75 100 125 150 I A VERAGE FOR WARD CURRENT (A) (AV), T, LEAD TEMPERATURE (ºC) Fig. 1 Forward Current Derating Curve L 80-100 2 of 2 1 10 100 I , PEAK FOR WARD SURGE CURRENT (A)FSM NUMBER OF CYCLES A T 60 Hz Fig. 3 Max Non-Repetitive Peak Fwd Surge Current Single Half-Sine-Wave (JEDEC Method) T =

100 Cj °

Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com 115-120 250