TS1220

TS1220-600B STMICROELECTRONICS | Alldatasheet

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Technical content

TS1220-600B® May 1998 - Ed: A3 SENSITIVE SCR Symbol Parameter Value Unit VDRM VRRM Repetitive peak off-state voltage Tj = 125°C RGK = 220 Ω 600 V IT(RMS) RMS on-state current (180° conduction angle) Tc= 105°C1 2 A IT(AV) Average on-state current (180° conduction angle) Tc= 105°C8 A ITSM Non repetitive surge peak on-state current (Tj initial = 25°C ) tp = 10 ms 110 A tp = 8.3 ms 115 I2t I2t Value for fusing tp = 10 ms 40 A 2s dI/dt Critical rate of rise of on-state current IG = 10 mA dIG /dt = 0.1 A/µs.

50 A/ µs

Storage junction temperature range Operating junction temperature range - 40 to + 150 - 40 to + 125 T Maximum temperature for soldering during 10s 260 °C ABSOLUTE RATINGS (limiting values) DPAK (Plastic) IT(RMS) = 12A VDRM /VRRM = 600V IGT < 200µA HIGH ITSM = 110A (tp = 10ms)

FEATURES

The TS1220-600B is using a high performance TOPGLASS PNPN technology and is intended for applications requiring high surge capability (like power tools, crowbar protection, capacitive dis- charge ignition...).

DESCRIPTION

K A G A

PG (AV)= 0.2W PGM = 3 W (tp = 20 µs) IGM = 1.2 A (tp = 20 µs) GATE CHARACTERISTICS (maximum values) Symbol Parameter Value Unit Rth(j-c) Junction to case for D.C 1.5 °C/W Rth(j-a) Junction to ambient (S = 0.5 cm2)7 0 °C/W THERMAL RESISTANCES Symbol Test Conditions Type Value Unit IGT VD =12V RL=140Ω Tj= 25°C MAX 200 µA VGT VD =12V RL=140Ω Tj= 25°C MAX 0.8 V VGD VD =12V(DC) RL=33Ω Tj= 25°C MAX 0.1 V VRG IRG = 10µA Tj= 25°C MIN 8 V IH IT=50mA IG =5mA R GK = 1kΩ Tj= 25°C MAX 5 mA VTM ITM = 24A tp= 380µs Tj= 25 °CM A X 1 . 6 V IDRM VD= VDRM R GK = 220Ω Tj= 25°C MAX 10 µA IRRM VR = VRRM RGK = 220Ω Tj= 125°C MAX 2 mA dV/dt V D =67%V DRM RGK = 220Ω Tj= 125°CM I N 5 V / µs

ELECTRICAL CHARACTERISTICS

ORDERING INFORMATION Add "-TR" suffix for Tape and Reel shipment TS 12 20 - 600 B THYRISTOR SENSITIVE CURRENT SENSITIVITY VOLTAGE PACKAGE B = DPAK TS1220-600B

P(W) α α α α α I (A)T(AV) 180° α α Fig 1: Maximum average power dissipation versus average on-state current. 0 25 50 75 100 1250 Tamb(°C) P(W) Tcase (°C) α Rth=0°C/W 125 105 110 115 120 Rth(j-a)=37°C/W Rth(j-a)=80°C/W Fig 2: Correlation between maximum average power dissipation and maximum allowable tem- peratures (Tamb and Tcase). Note: Rth=0°C/W is infinite heatsink. 0 25 50 75 100 1250 I (A)T(AV) D.C. α Tcase(°C) Fig 3-1: Average and D.C. on-state current versus case temperature. 0 25 50 75 100 1250.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 α Tamb(°C) I (A)T(AV) Fig 3-2: Average and D.C. on-state current versus ambient temperature (device mounted on FR4 with recommended pad layout). 1E-3 1E-2 1E-1 1E+00.1 0.2 0.5 1.0 K=[Zth(j-c)/Rth(j-c)] tp(s) Fig 4: Relative variation of thermal impedance junction to case versus pulse duration. 1E-2 1E-1 1E+0 1E+1 1E+2 5E+20.01 0.10 1.00 K=[Zth(j-a)/Rth(j-a)] tp(s) Fig 4-2: Relative variation of thermal impedance junction to ambient versus pulse duration (re- comended pad layout). TS1220-600B

-40 -20 0 20 40 60 80 100 120 1400.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 I ,I [Tj]/I ,I [Tj=25°C]GT H GT H IGT IH Tj(°C) Fig 5: Relative variation of gate trigger current and holding current versus junction temperature. 1E+1 1E+2 1E+3 1E+40.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 I [R ] / I [R =1k ]HG K H G K Ω Tj=25°C R ( )GK Ω Fig 6: Relative variation of holding current versus gate-cathode resistance (typical values). 1 10 100 10000 100 110 120 IA )TSM( Tj initial=25°C F=50Hz Number of cycles Fig 7: Non repetitive surge peak on-state current versus number of cycles. 12 5 1 010 100 500 I (A),I²t(A²s)TSM Tj initial=25°C ITSM I²t tp(ms) Fig 8: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and cor- responding value of I 2t. 1.0 10.0 100.0 I (A)TM Tj max.: Vto=0.85V Rt=31m Ω Tj=Tj max. Tj=25°C V (V)TM Fig 9: On-state characteristics (maximum values). 0 2 4 6 8 1 01 21 41 61 82 00 100 Rth(j-a) (°C/W) S(Cu) (cm²) Fig 10: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35µm). TS1220-600B

DPAK (Plastic) REF. DIMENSIONS Millimeters Inches A 2.20 2.40 0.086 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.212 C 0.45 0.60 0.017 0.023 C2 0.48 0.60 0.018 0.023 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.251 0.259 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.397 L2 0.80 0.031 L4 0.60 1.00 0.023 0.039 V2 0° 8° 0° 8° Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 1998 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. TYPE MARKING TS1220-600B TS 1220 MARKING FOOT PRINT DIMENSIONS (in millimeters) 6.7 6.7 6.7 1.61.6 2.32.3 TS1220-600B