TS120F STMICROELECTRONICS | Alldatasheet
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Technical content
ky 7} SGS-THOMSON , MICROELECTRONICS TS120 F SENSITIVE GATE SCR
FEATURES
4- CATHODE (Kk) = IAMS) = 1A A K 2- ANODE (A) = Vora = 400 V/600 V/800 V 3- GATE (G) lot < 200nA 8 4- ANODE (Tab)
DESCRIPTION
The TS120F high voltage series of Silicon Con- trolled Rectifiers use a high performance planar % 3 diffused PNPN, glass passivated sensitive gate technology. Packaged in SOT 223, suitable for surface mounting. SOT 223 These parts are intended for general purpose (Plastic) switching and phase control applications. ABSOLUTE RATINGS (limiting values) [-symoot [Parameter veto | ut] IT(RMS) | RMS on-state current Ttab = 95°C 1 A Single phase circuit (180° conduction angle) Hav) _ | Mean on-state current Ttab = 95°C A Single phase circuit (180° conduction angle) Tram | Non repetve surge peak on-state curent (initial = 25°C ) ddt Critical rate of rise of on-state current Aus Ig=10mA dig dt = 0.1 Aus. Tetg _| Storage and operating junction temperature range +40, +125 c y 740, +125 a es oyna ee | 400 | soor [coor | VpRM__ | Repetitive peak off-state voltage 400 800 v VRRM | Tj= 125°C RGK = 1KQ
Fh d-) [Junction to ambient with 5 cm? copper surface under tab GATE CHARACTERISTICS (maximum values) PGM=2W (tp=20us PG (Avj= 100 mW IFGM=1A (tp=20us) VeGM=10V(tp=20ys) VAGM= SV. ELECTRICAL CHARACTERISTICS. [-symoot | tentconatione Tate | unt | | ter [Vostev 0) ret4o0 [tease [wax [zo | a | [ver —[vorey 6c) aston | rave [wr] oe |v | Vp=VpRM IG = 10mA Tle 25°C dig/dt = 0.15A/s ps feewce [epee [wx] oe | iar [ewe [we | anv | tora | Yoru Ran mr aee [we [ax | an \\ v Rated [es _| Ip=2A Vp=35V Vp=67%VDRM Tix 125°C us diidte30Ais GK = 1 KO aoe [ume seie [Recta | Tee [ww | wed Vp=67%VDRM Rak = 1 Ka w| =|
Fig.1 : Maximum average power dissipation versus _Fig.2 : Correlation between maximum average power average on-state current. dissipation and maximum allowable temperatures (Tamb and Ttab). PW) P (Ww) Ttab ("C) Cea aaeeE TTT. te LL aA ee
08 LADS ar se oat garuorect A 108
vol | LAKE ta 0! og ree OK TT | on LY oe st | ow tt | TNAT I 0 0.102 03 0405 06070809 1 0 20 40 60 80 100 120 140 Fig.3 : Average on-state current versus tab ‘Fig.4 : Relative variation of holding current versus temperature. gate-cathode resistance (typical values). "ran HGH ““LT TT TT “TN wiabe ‘ IN [| | pee \\t mn 0.8 tT | as | os. A 10 * AE ENS TUNA 6 Ni “feto T] ine | ST ° ° Anon eee oO 20 40 60 80 100 120 140 0.01 O41 1 10 Fig.5 : Relative variation of gate trigger current and Fig.6 : Non Repetitive surge peak on-state current holding current versus junction temperature. versus number of cycles. SRBeCT ” RIEZSCT wu” CESS eeeeeee fee 2 TT) eCEEEEEEE of LUT TTI TTT >A am 0 oy To Oe eT sr 4 ne I ye Po ob TITS PE AT SON a CPST a0 ‘atest Ss LT -40 -20 0 25 50 75 100 125 1 10 100 1000
Fig.7 : Non repetitive surge peak on-state current fora _Fig.8 : On-state characteristics (maximum values). sinusoidal pulse with width : t < 10ms, and corresponding value of I2t. teu (A). Pt (A 8) try (A) 1 — ——— Tinta - 28'¢ Se a — CS fe i ae <= eee =— Saas a ji e/a —=2— = ====-= a a a on HTT wm | 1 2 5 10 0 1 2 3 4 5 6 Fig.9 : Relative variation of dV/dt immunity versus gate-cathode capacitance (typical values). dV/dt [CGK]
36 Svat IRGK*1KO}
ya —_L_ Lot i)
4 Tee (a
320 Vo = 67% Von Pt
eo — Tr ae e—_ ae eee 7— er ee e§—} Hq coxine —} TAH Cox 5-—_ 1 yy a ae a—_ eee eee 2—__ air eee Rgx* kO A Se ° SAS OS Without Cox. 1 10 Fig.10 : Thermal resistance junction to ambient versus copper surface under tab. Rth{j-a) (°C/W) 1405 wo tt TT TT SNe o NITE ETT aE REET TT witty tty ty oT owe HE [scot TT 0S 118 2 25 8 5 4 45 6
PACKAGE MECHANICAL DATA (in millimeters) SOT 223 Plastic 6.9010 20 t—— 7 0020.30 . +020 gS | 350820 ly} 1] BZ L ge ¢ 2.204003 | oeoroin® = v7" gz g 4601003 + F065#020 © = sok gs 8 © 1 30040 10 S 44070003 Cooling method ; C Marking : Type number Weight : 0.11 9 Polanty :NA ‘Stud torque : NA