TS105-1 ETC2 | Alldatasheet
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Technical content
Sensors in thin film technology HL-Planartechnik GmbH Hauert 13 44 227 Dortmund Tel.: ++49 / (0)231 / 97400 Fax.: ++49 / (0)231 / 974020 105_12_e_01 March 1999 THERMOPILES are used for non-contact surface temperature measuring. Any object emits infrared radiation. The radiation power is increasing with growing surface temperatures. Based on this relation, THERMOPILES measure the emitted power and determine the object’s temperature precisely. Function Principle THERMOPILES are based on the Seebeck effect, which is used since a long time for conventional thermocouples. The application of micromechanics and thin film technology allows the production of miniaturized and cost effective sensor elements. A multitude of thermojunctions deposited on a silicon substrate is connected in series to form a THERMOPILE. The hot junctions are thermally insulated from the cold junctions on the substrate by etching a self-supporting extremly thin membrane. An absorbing layer on the hot junctions transforms the incoming radiation into heat. A voltage proportional to the radiation is generated by the thermoelectric effect. The sensors are delivered in TO5-packages. Different housings and filter types can be selected to find an optimal solution for each application. Chips without housing are available as well. Technical Data F i l t e r Parameter Symbol Unit Value Condition Number of thermojunctions n 100 Material BiSb, NiCr Active Area A A mm² 0.7 * 0,7 Chip Size AC mm² 2.0 * 2.0 Resistance of Thermopiles R kΩ 50 ± 15 25 °C Sensitivity of sensor S C V / W typical 110 25°C, 500 K, DC Specific detectivity D* cm*Hz 1/2 / W 2.1 * 10 8 500 K, DC Noise equivalent power NEP nW 0.35 500 K, 1 Hz Noise voltage U N nV / Hz 1/2 37 500 K, 1 Hz Time constant t63 ms 40 ± 10 500 K, 1 Hz Storage temperature T °C -40 ... 100 Reference Resistor Resistance RNi Ω 1000 ± 0.4% 0 °C TC of resistance TCR Ni ppm / K 6178 ± 1% 0 °C...100 °C Function: R(T) = 1000Ω + 6,17*T*Ω, for detailled information see data sheet of reference resistor 456789 1 0 1 1 1 2 1 3 1 4 Wavel engt h ( um) Transmission (%) Operation temperature T °C -20 ... 100 absorption area (hot junctions) SiNx-membrane silicon substrate (cold junctions)
Sensors in thin film technology HL-Planartechnik GmbH Hauert 13 44 227 Dortmund Tel.: ++49 / (0)231 / 97400 Fax.: ++49 / (0)231 / 974020 105_12_e_01 March 1999
Applications
- contactless measurement of surface temperatures or IR-Radiation
- temperature measurement at moving objects
- continous temperature control in manufacturing processes
- thermal alarm systems
- further applications in safety-, consumer-, environmental technics and automotive systems
- absorbing measurement for gas analysis (see special data sheet)
- climate control systems
- medical instruments Further products with different filters and packages are available, see separate data sheets Technical data are subject to change without notice Housing TO 5 TS105-1 TS105-2 Connecting Diagramm TS105-1 TS105-2 Output Voltage versus Objekt Temperature 25 50 75 100 125 150 175 200 225 Output Voltage [mV] Conditions: Distance Thermopile/Black Body 5 cm, emissivity= 1, surrounding temperature 25°C Tables with emissivity of different materials and surfaces are available. bottom view Object Temperature [°C]