TS1235 STMICROELECTRONICS | Alldatasheet

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THOMSON Selene TS 135+ TS 1235 {SEMICONDUCTORS THYRISTORS ‘General purpose SOR sulted for power supplies triatas) = 95 A/ Tease = 75°C up to 400 Hz on resistive or inductive loads. © VaRM Up to 1 200V. VoRM © Glass passivated chips. = <1200V @ High stability and reliability. ovs < : Var : Thyrstors & usage général, pour des alimentations Cese . 10 4amelal — | jusqu’a 400 He sur charges résistives ou inductives, Bottier ° TO AB metal (8-287 © Vara iusqu’é 1 200¥. © Pasiiles glassivées. 8 Gnd debit des carectntigues. | & | "ABSOLUTE RATINGS (LIMITING VALUES) iain cesses ion [ome me | | ‘RMS on-state current P 35 ‘Mean on-stato current® TAY) 225 Courant moyan & état passant* @ Tease = 75°C ‘Non repetitive surge peak on-state curcent ism 360 (t= 83ms) | | Courant non répatiti de surcharge ordto item 330 t=10 ms) | | acoidentete a rétat passant @T < 125°C ee Ge) Valeur do la constanto 2 @T < 125°C Critical rate of rise of on-state current* Scans mean | oe | mL ve | ‘Storage and operating junction temperatures : — 7 Tomporaturos extrémes do stockage et de : Teta ap ane s fonction en fonetionnement i ' Vorm=Vanw a Thermal rosistances ° = Junction to case tor D.C. ‘Jonetion-bottier en conting Ringo) | 1 “ow . — Contact (case to heatsink) Contact (boftier-radiateur) Rinie-n) | 04 “cow + Single phase circuit, 180° conduotion angle Hall sine wave * Gireull monophasé, angle de conduction 180° ** Demi-oride sinusoidele #48 Gate supply 201/20 1 = tr < 0.1 ws ~ Hall sine wave of 63 1S . ++ Géndrateur do gichotto Demi-sinusokde May 1984 -1/5 THOMSON SEMICONDUCTORS seen Reagoe nETcOVELIZY Franco #,\\ THOMSON | Tei :946:97.10/ Telex: 698 866 F 151 S* COMPONENTS

: 1S 135 —- TS 1235 TAS: /7 | GATE Suagacrensrics (Maximum values) | CARACTERISTIQUES DE GACHETTE (Valours maximates) | Pam =60W (t= 6008) Ikram = 10 A (t= 500y8) Vrom =5V L Pay) = 1W VeGo = 15 V t= 500u8) ELECTRICAL. CHARACTERISTICS | CARACTERISTIQUES ELECTRIQUES: . | ee * For higher guaranteed values, please consult us. See ee men D202 B4t02 Cooling method: by conduction | kK (method ©) - . -— ‘Marking : type number fe) aq Polarity : anode to case 1) i Stud torque: 35m ANmin-8.8m A Nmax . f} D125 «w ‘Thread: z I maar =| 1/4"=28 UNF : type NP i ina a] Moonta: BOONE att . ia [| | Fi . Ey [TT] rT ot tt abt \\ o 9/16" over flats 6 sided a pans 9/16” sur plats Mé YT] 174” - 28 UNF TO 48 metal (CB-267)

: (\\ \\ T2S-17 o {\\ 4 [8S sce ' 80 y y 425 TA e = CEHAAT © wt WEEE

5 LL IMIS RWSEEEEEY |

ETO) & -GRANACEE BOOM 2" YAAKACES 5” WAC 2 COANE AL Se 2 “COAACACH FOR SINUSOIDAL CURRENT I cy SINUSOIDAL CURRENT WAVEFORM “ WY 2 = FE

2 OPE) »ASEEEEFE

TCU Z| 5 -EARSEEEEE a Ss e0 4 yA ECC: “EERWERENG = 40 y a Fst o \\t PALE | SEERA

1S 135 —- TS 1235, a . —_— Fas? alg a 1000 Te —)] Ltt eet 3 now va=0 —~[ HH] SLL) eet . 4 PEAS ECT FERRERS Fk NT 3 a | a s Bae [| e CHE eg Lea ES 3, een Ce oe ee = & COC] For Loss ao We . FS tt CALCULATIONS 9E :

2 Coo, 23

yo 1.08 Vv Be Perc ieseta) ‘o 4 238 46 67 8 400 2 5 40 INSTANTANEOUS ON-STATE VOLTAGE, Vy (V) PULSE BASE WIDTH, t (ms) FIG.5 - MAXIMUM ON-STATE CONDUCTION FIG.8 - NON REPETITIVE SUB-CYCLE SURGE CHARACTERISTIC (Ty = 425 °C). ptoaty Fig Be) 12 RATING 7 : e COMI esa fA 2 oo HIN ETE TT eC ATE ME TU ge ot LTTE CTI TI ee IN ES oot IM PT BUTTE CU

3 CLUE TUTTE TT

NUMBER OF CYCLES {at 50 Hz) FIG.7 - NON REPETITIVE SURGE PEAK ON-STATE CURRENT VERSUS NUMBER OF CYCLES. 154

— — Tac 01724 - | | [| --- CL — Ls T- 25/7

5 Litt | [TTT

8 NTT Pry yy yy

e ,,-NT TTT TT

5 REAP TT TPE TT |

5 NEN

[| TYNE TT TT LT NONE TTT ; , CLEP TT FRR 40 -20 0 425 JUNCTION TEMPERATURE, Ty (°c) FIG.8 - RELATIVE VARIATION OF GATE TRIGGER CURRENT AND HOLDING CURRENT VEASUS JUNCTION TEMPERATURE. Eee tts SHH E | = Pe Na eo LL NT ry ee

5 POAT A Sr

ees | eee | onic Cn Ty + 28 ia | oT: TT EIT 2 = + 28 °° |

0.04 On 4 10

GATE CURRENT, Ig (A) FIG. ~ GATE TRIGGER CHARACTERISTICS. - = 10 Fa EEE Ee

5 CT Effective thermal

a conduct ion| resistance (°C/W)

2 COMICCUISCUICCTTI pres) er

@. COUT CT) pe | EEHEEHerHCeHa | | ie | is 5 A . @ COOCCeTC |) S| ons ed CICA Ty Le Lis | ee a ni LLL TILT Tr Tl Eos 2 4 10 10 10 ! 10 ‘TIME, t (s) FIG.40 - TRANSIENT THERMAL IMPEDANCE JUNCTION TO CASE. 155