TS1005 TOUCHSTONE | Alldatasheet
Document overview
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Technical content
FEATURES
Single 0.8V to 5.5V Operation Supply current: 1.3μA (typ) Input Bias Current: 2pA (typ) Low TCVOS: 9µV/°C (typ) AVOL Driving 100kΩ Load: 90dB (min) Gain-Bandwidth Product: 20kHz Unity Gain Stable Rail-to-rail Input and Output No Output Phase Reversal 5-pin SC70 Package
APPLICATIONS
Battery/Solar-Powered Instrumentation Portable Gas Monitors Low-voltage Signal Processing Micropower Active Filters Wireless Remote Sensors Battery-powered Industrial Sensors Active RFID Readers Powerline or Battery Current Sensing Handheld/Portable POS Terminals
DESCRIPTION
The TS1005 is a 1.3µA supply current, precision CMOS operational amplifier designed to operate over a supply voltage range from 0.8V to 5.5V with a GBWP of 20kHz . Fully specified at 1.8V, the TS1005 is optimized for ultra- long-life battery -powered applications. The TS1005 is Touchstone’s f ifth operational amplifier in the “NanoWatt Analog™” high-performance analog integrated circuits portfolio. The TS1005 exhibits a typical input bias current of 2pA, and rail -to-rail input and output s tages. The TS1005 can operate from single-supply voltages from 0.8V to 5.5V. The TS1005’s combined features make it an excellent choice in applications where very low supply current and low operating supply voltage translate into very long equipment operating time. Applications include: micropower active filters, wireless remote sensors, battery and powerline current sensors , portable gas monitors, and handheld/portable POS terminals. The TS1005 is fully specified over the industrial temperature range (−40°C to +85°C) and is available in a PCB-space saving 5-lead package. TYPICAL APPLICATION CIRCUIT A MicroWatt 2-Pole Sallen Key Low Pass Filter Patent(s) Pending NanoWatt Analog and the Touchstone Semiconductor logo are registered trademarks of Touchstone Semiconductor, Incorporated. 15% Percent of Units - % 20% 30% 25% 10% Supply Current Distribution Supply Current - µA VDD = 1.8V A 0.8V TO 5.5V, 1.3µA, 20kHz RAIL-TO-RAIL SINGLE OP AMP
Continuous Power Dissipation (TA = +70°C) 5-Pin SC70 (Derate 3.87mW/°C above +70°C) ... 310 mW Electrical and thermal stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the operational sections of the specifications is not implied. Exposure to any absolute maximum rating conditions for extended periods may affect device reliability and lifetime. PACKAGE/ORDERING INFORMATION TAPE & REEL ORDER NUMBER PART MARKING PACKAGE QUANTITY TS1005IJ5TP TAJ --- TS1005IJ5T 3000 Lead-free Program: Touchstone Semiconductor supplies only lead-free packaging. Consult Touchstone Semiconductor for products specified with wider operating temperature ranges.
ELECTRICAL CHARACTERISTICS
VDD = +1.8V, VSS = 0V, VINCM = VSS; RL = 100kΩ to (VDD-VSS)/2; TA = -40°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C. See Note 1 Parameters Symbol Conditions Min Typ Max Units Supply Voltage Range VDD-VSS 0.8 5.5 V Supply Current ISY RL = Open circuit TA = 25°C 1.3 1.6 µA -40°C ≤ TA ≤ 85°C 1.8 Input Offset Voltage VOS VIN = VSS or VDD TA = 25°C 0.8 3 mV -40°C ≤ TA ≤ 85°C 5 Input Offset Voltage Drift TCVOS 9 µV/°C Input Bias Current IIN+, IIN- VIN+, VIN- = (VDD - VSS)/2 TA = 25°C 2 pA -40°C ≤ TA ≤ 85°C 100 Input Offset Current IOS Specified as IIN+ - IIN- VIN+, VIN- = (VDD - VSS)/2 TA = 25°C 2 pA -40°C ≤ TA ≤ 85°C 50 Input Voltage Range IVR Guaranteed by Input Offset Voltage Test VSS VDD V Common-Mode Rejection Ratio CMRR Vdd = 5.5V, 0V ≤ VIN(CM) ≤ 5.0V TA = 25°C 70 90 dB -40°C ≤ TA ≤ 85°C 68 Power Supply Rejection Ratio PSRR 0.8V ≤ (VDD - VSS) ≤ 5.5V TA = 25°C 70 90 dB -40°C ≤ TA ≤ 85°C 67 Output Voltage High VOH Specified as VDD - VOUT, RL = 100kΩ to VSS TA = 25°C 3.7 mV -40°C ≤ TA ≤ 85°C 6 Specified as VDD - VOUT, RL = 10kΩ to VSS TA = 25°C 30 -40°C ≤ TA ≤ 85°C 60 Output Voltage Low VOL Specified as VOUT - VSS, RL = 100kΩ to VDD TA = 25°C 1.5 mV -40°C ≤ TA ≤ 85°C 6 Specified as VOUT - VSS, RL = 10kΩ to VDD TA = 25°C 15 -40°C ≤ TA ≤ 85°C 30 Short-circuit Current ISC+ VOUT = VSS TA = 25°C 4 mA -40°C ≤ TA ≤ 85°C 2 ISC- VOUT = VDD TA = 25°C 15 Open-loop Voltage Gain AVOL VSS+50mV ≤ VOUT ≤ VDD-50mV TA = 25°C 91 110 dB -40°C ≤ TA ≤ 85°C 84 Gain-Bandwidth Product GBWP RL = 100kΩ to VSS, CL = 20pF 20 kHz Phase Margin φM Unity-gain Crossover, RL = 100kΩ to VSS, CL = 20pF 70 degrees Slew Rate SR RL = 100kΩ to VSS, AVCL = +1V/V 7.5 V/ms Full-power Bandwidth FPBW FPBW = SR/(π • VOUT,PP); VOUT,PP = 0.7VPP 3400 Hz Input Voltage Noise Density en f = 1kHz 0.6 µV/√Hz Input Current Noise Density in f = 1kHz 10 pA/√Hz Note 1: All specifications are 100% tested at TA = +25°C. Specification limits over temperature (TA = TMIN to TMAX) are guaranteed by device characterization, not production tested.
TYPICAL PERFORMANCE CHARACTERISTICS Supply Current vs Supply Voltage SUPPLY CURENT - µA SUPPLY VOLTAGE - Volt Supply Current vs Input Common-Mode Voltage SUPPLY CURENT - µA INPUT COMMON-MODE VOLTAGE - Volt Supply Current vs Input Common-Mode Voltage Input Offset Voltage vs Input Common-Mode Voltage INPUT OFFSET VOLTAGE - mV INPUT OFFSET VOLTAGE - mV INPUT COMMON-MODE VOLTAGE - Volt Input Offset Voltage vs Supply Voltage INPUT COMMON-MODE VOLTAGE - Volt SUPPLY CURENT - µA SUPPLY VOLTAGE - Volt VDD =1.8V TA = +25°C Input Offset Voltage vs Input Common-Mode Voltage INPUT OFFSET VOLTAGE - mV INPUT COMMON-MODE VOLTAGE - Volt VDD = 5.5V TA = +25°C +25°C +85°C -40°C 1.1 1.2 1.3 1.4 1.5 TA = +25°C 1.5 1.3 1.1 1.0 0 0.6 1.8 TA = +25°C 1.5 1.4 1.2 1.0 0 1.1 3.3 4.4 5.5 TA = +25°C VINCM = VDD 2.5 1.25 -2.5 VINCM = 0V 0 1.2 1.8 0.7 0.35 -0.35 0.9 0.45 -0.9 -0.45 0 3.3 4.4 5.5 2.2 1.2 1.4 1.2 1.3 1.1 2.2 1.25 2.4 3.9 0.6 -0.7 1.1
-40 TYPICAL PERFORMANCE CHARACTERISTICS Input Bias Current (IIN+, IIN-) vs Input Common-Mode Voltage INPUT BIAS CURRENT - pA INPUT COMMON-MODE VOLTAGE - Volt Output Voltage High (VOH) vs Temperature, RLOAD =100kΩ TEMPERATURE - °C Output Voltage Low (VOL) vs Temperature, RLOAD =100kΩ TEMPERATURE - °C Output Voltage High (VOH) vs Temperature, RLOAD =10kΩ Output Voltage Low (VOL) vs Temperature, RLOAD =10kΩ Input Bias Current (IIN+, IIN-) vs Input Common-Mode Voltage OUTPUT SATURATION VOLTAGE - mV INPUT COMMON-MODE VOLTAGE - Volt INPUT BIAS CURRENT - pA OUTPUT SATURATION VOLTAGE - mV VDD = 5.5V VDD =1.8V RL = 100kΩ VDD = 1.8V VDD = 5.5V RL = 100kΩ VDD = 1.8V VDD = 5.5V 4.75 0.75 1.75 2.75 110 OUTPUT SATURATION VOLTAGE - mV OUTPUT SATURATION VOLTAGE - mV TEMPERATURE - °C TEMPERATURE - °C RL = 10kΩ VDD = 1.8V VDD = 5.5V RL = 10kΩ VDD = 1.8V VDD = 5.5V 3.75 TA = +25°C TA = +85°C TA = +25°C TA = +85°C
VOUT(N) - 100µV/DIV 0.1Hz to 10Hz Output Voltage Noise TYPICAL PERFORMANCE CHARACTERISTICS Output Short Circuit Current, ISC+ vs Temperature OUTPUT SHORT-CIRCUIT CURRENT - mA Output Short Circuit Current, ISC- vs Temperature Large-Signal Transient Response VDD = 5.5V, VSS = GND, RLOAD = 100kΩ, CLOAD = 15pF 200µs/DIV OUTPUT SHORT-CIRCUIT CURRENT - mA INPUT Small-Signal Transient Response VDD = 5.5V, VSS = GND, RLOAD = 100kΩ, CLOAD = 15pF 2ms/DIV OUTPUT INPUT OUTPUT TEMPERATURE - °C TEMPERATURE - °C VDD = 1.8V VDD = 5.5V VDD = 1.8V VDD = 5.5V VOUT = 0V VOUT = VDD 10 5.5 8.5 14.5
1 Second/DIV
100µVPP 23.5 Gain and Phase vs. Frequency GAIN - dB FREQUENCY - Hz PHASE - Degrees 10 1k 10k 100 -10 100 100k PHASE GAIN 20kHz 70°
1 OUT Amplifier Output. 2 VSS Negative Supply or Analog GND. If applying a negative voltage to this pin, connect a 0.1µF capacitor from this pin to analog GND. 3 +IN Amplifier Non-inverting Input. 4 -IN Amplifier Inverting Input. 5 VDD Positive Supply Connection. Connect a 0.1µF bypass capacitor from this pin to analog GND. THEORY OF OPERATION The TS1005 is fully functional for an input signal from the negative supply (V SS or GND) to the positive supply (VDD). The input stage consists of two differential amplifiers, a p- channel CMOS stage and an n- channel CMOS stage that are active over different ranges of the input common mode voltage. The p-channel input pair is active for input common mode voltages, V INCM, between the negative supply to approximately 0.4V below the positive supply. As the common- mode input voltage moves closer towards VDD, an internal current mirror activates the n-channel input pair differential pair. The p- channel input pair becomes inactive for the balance of the input common mode voltage range up to the positive supply. Because both input stages have their own offset voltage (V OS) characteristic, the offset voltage of the TS1005 is a function of the applied input common-mode voltage, V INCM. The V OS has a crossover point at ~0.4V from V DD (Refer to the V OS vs. V CM curve in the Typical Operating Characteristics section). Caution should be taken in applications where the input signal ampli tude is comparable to the TS1005’s V OS value and/or the design requires high accuracy. In these situations, it is necessary for the input signal to avoid the crossover point. In addition, amplifier parameters such as PSRR and CMRR which involve the input offset voltage will also be affected by changes in the input common- mode voltage across the differential pair transition region. The second stage is a folded- cascode transistor arrangement that converts the input stage differential signals into a single -ended output. A complementary drive generator supplies current to the output transistors that swing rail to rail. The TS1005 output stages voltage swings within 3.5mV from the rails at 1.8V supply when driving an output load of 100k Ω - which provides the maximum possible dynamic range at the output. This is particularly important when operating on low supply voltages. When driving a stiffer 10k Ω load, the TS1005 swings within 30mV of V DD and within 13mV of VSS (or GND). APPLICATIONS INFORMATION Portable Gas Detection Sensor Amplifier Gas sensors are used in many different industrial and medical applications. Gas sensors generate a current that is proportional to the percentage of a particular gas concentration sensed in an air sample. This output current flows through a load resistor and the resultant voltage drop is amplified. Depending on the sensed gas and sensitivity of the sensor, the output current can be in the range of tens of microamperes to a few milliamperes. Gas sensor datasheets often specify a recommended load resistor value or a range of load resistors from which to choose. There are two main applications for oxygen sensors – applications which sense ox ygen when it is abundantly present (that is, in air or near an oxygen tank) and those which detect traces of oxygen in parts-per-million concentration. In medical applications, oxygen sensors are used when air quality or oxygen delivered to a patient needs to be monitored. In fresh air, the concentration of oxygen is 20.9% and air samples containing less than 18% oxygen are considered dangerous. In industrial applications, oxygen sensors are used to detect the
The two resistors labeled R1 should be closely matched to each other as well as both resistors labeled R2 to ensure acceptable common- mode rejection performance. Resistor networks ensure the closest matching as well as matched drifts for good temperature stability. Capacitor C1 is included to limit the bandwidth and, therefore, the noise in sensitive applications. The value of this capacitor should be adjusted depending on the desired closed- loop bandwidth of the instrumentation amplifier. The RC combination creates a pole at a frequency equal to 1/(2π ×R1C1). If the AC-CMRR is critical, then a matched capacitor to C1 should be included across the second resistor labeled R1. Because the TS1005 accepts rail -to-rail inputs, the input common mode range includes both ground and the positive supply of 1.5V. Furthermore, the rail-to-rail output range ensures the widest signal range possible and maximizes the dynamic range of the system. Also, with its low supply current of 1.3μA, this circuit consumes a quiescent current of only ~2.7μA, yet it still exhibits a 2-kHz bandwidth at a circuit gain of 2. Driving Capacitive Loads While the TS1005 ’s internal gain-bandwidth product is 20kHz, it is capable of driving capacitive loads up to 50pF in voltage follower configurations without any additional components. In many applications, however, an operational amplifier is required to drive much larger capacitive loads. The amplifier’s output impedance and a large capacitive load create additional phase lag that further reduces the amplifier’s phase margin. If enough phase delay is introduced, the amplifier’s phase margin is reduced. The effect is quite evident when the transient response is observed as there will appear noticeable peaking/ringing in the output transient response. If the TS1005 is used in an application that requires driving larger capacitive loads , an isolation resistor between the output and the capacitive load should be used as illustrated in Figure 5. Table 1 illustr ates a range of R ISO values as a function of the external C LOAD on the output of the TS1005. The power s upply voltage used on the TS1005 at which these resistor values were determined empirically was 1.8V. The oscilloscope capture shown in Figure 6 illustr ates a typical transient response obtained with a C LOAD = 100pF and an R ISO = 120k Ω. Note that as C LOAD is increased a smaller R ISO is needed for optimal transient response. In the event that an external R LOAD in parallel with CLOAD appears in the application, the use of an R ISO results in gain accuracy loss because the external series RISO forms a voltage -divider with the external load resistor RLOAD. External Capacitive Load, CLOAD External Output Isolation Resistor, RISO 0-50pF Not Required 100pF 120kΩ 500pF 50kΩ 1nF 33kΩ 5nF 18kΩ 10nF 13kΩ Figure 5: Using an External Resistor to Isolate a CLOAD from the TS1005’s Output VIN VOUT
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+1 (408) 215 - 1220 ▪ www.touchstonesemi.com RTFDS Package outline drawing 5-Pin SC70 Package Outline Drawing (N.B., Drawings are not to scale) Information furnished by Touchstone Semiconductor is believed to be accurate and reliable. However, Touchstone Semiconductor does not assume any responsibility for its use nor for any infringements of patents or other rights of third parties that may result f rom its use, and all information provided by Touchstone Semiconductor and its suppliers is provided on an AS IS basis, WITHOUT WARRANTY OF ANY KIND . Touchstone Semiconductor reserves the right to change product specifications and product descriptions at any time without any advance notice. No license is granted by implication or otherwise under any patent or pat ent rights of Touchstone Semiconductor. Touchstone Semiconductor assumes no liability for applications assistance or customer product design. Customers are responsible for thei r products and applications using Touchstone Semiconductor components. To minimi ze the risk associated with customer products and applications, customers should provide adequate design and operating safeguards. Trademarks and registered trademarks are the property of t heir respective owners. 1 3 0.65 TYP. 1.30 TYP. 0.15 - 0.30 1.80 - 2.20 1.15 - 1.35 0.26 - 0.46 0.275 - 0.575 LEAD FRAME THICKNESS GAUGE PLANE NOTES: DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. DOES NOT INCLUDE INTER-LEAD FLASH OR PROTRUSIONS. DIE IS FACING UP FOR MOLDING. DIE IS FACING DOWN FOR TRIM/FORM.3. 5. CONTROLLING DIMENSIONS IN MILIMITERS. ALL SIDE 1.80 - 2.40 0.00 - 0.10 1.00 MAX 0.10 - 0.18 0.15 TYP. 8º - 12º 0º - 8º 0.800 – 0.925 0.40 – 0.55
4 ALL SPECIFICATION COMPLY TO JEDEC SPEC MO-203 AA
- ALL SPECIFICATIONS REFER TO JEDEC MO-203 AA 7. LEAD SPAN/STAND OFF HEIGHT/COPLANARITY ARE CONSIDERED AS SPECIAL CHARACTERISTIC