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SiC Schottky Barrier Diode TRS4A65FTRS4A65FTRS4A65FTRS4A65F Start of commercial production 2016-11 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications
- Power Factor Correction
- Solar Inverters
- Uninterruptible Power Supplies
- DC-DC Converters 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) Chip design of 2nd generation. (2) High surge current capability : IFSM = 37A (Max) (3) The junction capacitance is small : Cj = 16 pF (Typ.) (4) The reverse current is small. : IR = 0.2 µA (Typ.) (5) Isolation package: TO-220F-2L 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit TO-220F-2L 1: Cathode 2: Anode 2020-09-28 Rev.5.0 ©2016-2020 Toshiba Electronic Devices & Storage Corporation
- 4. 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, Taaaa = 25 = 25 = 25 = 25 )))) Characteristics Repetitive peak reverse voltage Forward DC current Forward pulse current Non-repetitive peak forward surge current I2t limit value Junction temperature Storage temperature Mounting torque Isolation voltage(t=1.0s) Symbol VRRM IF(DC) IFP IFSM I2t Tj Tstg TOR Vdis Note (Note 1) (Note 2) Rating 650 6.85 175 -55 to 175 0.6 2000 Unit V A A A A2s N m V Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: t = 50 µs Note 2: f = 50 Hz (half-sine wave t = 10 ms) 5. 5. 5. 5. Thermal CharacteristicsThermal CharacteristicsThermal CharacteristicsThermal Characteristics Characteristics Thermal resistance (junction-to-case) Thermal resistance (junction-to-ambient) Symbol Rth(j-c) Rth(j-a) Test Condition Max 4.47 62.5 Unit /W /W 6. 6. 6. 6. Electrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, Taaaa = 25 = 25 = 25 = 25 )))) Characteristics Forward voltage Forward voltage Reverse current Junction capacitance Symbol VF (1) VF (2) IR Cj Test Condition IF = 2 A (pulse measurement) IF = 4 A (pulse measurement) VR = 650 V (pulse measurement) VR = 650 V, f = 1 MHz Min Typ. 1.2 1.45 0.2 Max 1.6 Unit V V µA pF 2020-09-28 Rev.5.0 ©2016-2020 Toshiba Electronic Devices & Storage Corporation
- 7. 7. 7. MarkingMarkingMarkingMarking (Package Name: TOSHIBA 1-10B1A) (Package Name: TOSHIBA 1-10B1A) (Package Name: TOSHIBA 1-10B1A) (Package Name: TOSHIBA 1-10B1A) Note: A line under a Lot No. identifies the indication of product Labels. [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 8. 8. 8. 8. Usage ConsiderationsUsage ConsiderationsUsage ConsiderationsUsage Considerations (1) The absolute maximum ratings are rated values that must not be exceeded during operation, even for an instant. The following are the recommended general derating methods for designing a circuit board using this device. VRRM : VRRM has a temperature coefficient of 0.1 %/ . Take this coefficient into account when designing a circuit board that will be operated in a low-temperature environment. IF(DC) : We recommend that the worst-case current be no greater than 80 % of the absolute maximum rating of IF(DC). IFP : We recommend that the worst-case current be no greater than 80 % of the absolute maximum rating of IFP. IFSM : This rating specifies a non-repetitive limit value. This only applies to an abnormal operation, which seldom occurs during the lifespan of a device. I2t : This rating specifies a non-repetitive limit value. This only applies to an abnormal operation, which seldom occurs during the lifespan of a device. Tj : Derate device parameters in proportion to this rating in order to ensure high reliability. We recommend that the junction temperature (Tj) of a device be kept below 140 . (2) For other design considerations, see the Toshiba website. 2020-09-28 Rev.5.0 ©2016-2020 Toshiba Electronic Devices & Storage Corporation
- 9. 9. 9. Characteristics Curves (Note)Characteristics Curves (Note)Characteristics Curves (Note)Characteristics Curves (Note) (Guaranteed Maximum)(Guaranteed Maximum)(Guaranteed Maximum)(Guaranteed Maximum) Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. 2020-09-28 Rev.5.0 ©2016-2020 Toshiba Electronic Devices & Storage Corporation
Package DimensionsPackage DimensionsPackage DimensionsPackage Dimensions Unit: mm Weight: 1.83 g (typ.) Package Name(s) TOSHIBA: 1-10B1A Nickname: TO-220F-2L 2020-09-28 Rev.5.0 ©2016-2020 Toshiba Electronic Devices & Storage Corporation
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- Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS. 2020-09-28 Rev.5.0 ©2016-2020 Toshiba Electronic Devices & Storage Corporation