TRLML6401

TRLML6401 TGS | Alldatasheet

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Technical content

0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 2. 4+0.1 -0. 1 1. 3+0.1 - 0. 1 0-0. 1 0. 38+0. 1 - 0. 1 0. 97+0. 1 -0. 1 0. 55 0. 4 1.Base 2.Emitter 3.collector 1 2 Unit: mmSOT-23 0.1+0.05 -0.01 1. Gate 2. Source 3. Drain ■ Features

• Ultra low on-resistance.
• P-Channel MOSFET.
• Fast switching. ■ Absolute Maximum Ratings Ta = 25℃ TRLML6401 P-Channel Enhancement MOSFET Parameter Symbol Rating Unit Drain-Source Voltage VDS -12 Gate-Source Voltage VGS ±8 Continuous Drain Current VGS=4.5V @ TA=25℃ -4.3 Continuous Drain Current VGS=4.5V@ TA=70℃ -3.4 Pulsed Drain Current a IDM -34 Power Dissipation @ TA=25℃ PD 1.3 Power Dissipation @ TA=70℃ 0.8 Single Pulse Avalanche Energy b EAS 33 mJ Thermal Resistance.Junction- to-Ambient RthJA 100 ℃/W Linera Derating Factor 0.01 W/℃ Junction Temperature TJ 150 Junction and Storage Temperature Range Tstg -55 to 150 V ID A W Notes: a.Repetitive Rating :Pulse width limited by maximum junction temperature b.Starting TJ=25℃, L=3.5mH, RG=25Ω, IAS=-4.3A TIGER ELECTRONIC CO.,LTD

■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=-250μA, VGS=0V -12 V VDS=-12V, VGS=0V -1 VDS=-9.6V, VGS=0V, TJ= 55℃ -25 Gate-Body leakage current IGSS VDS=0V, VGS=±8V ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS ID=-250μA -0.4 -0.55 -0.95 V VGS=-4.5V, ID=-4.3A 50 VGS=-2.5V, ID=-2.5A 85 VGS=-1.8V, ID=-2A 125 Forward Transconductance gFS VDS=-10V, ID=-4.3A 8.6 S Input Capacitance Ciss 830 Output Capacitance Coss 180 Reverse Transfer Capacitance Crss 125 Total Gate Charge Qg 10 15 Gate Source Charge Qgs 1.4 2.1 Gate Drain Charge Qgd 2.6 3.9 Turn-On DelayTime td(on) 11 Turn-On Rise Time tr 32 Turn-Off DelayTime td(off) 250 Turn-Off Fall Time tf 210 Body Diode Reverse Recovery Time trr IF=-1.3A, dI/dt=-100A/μs 22 33 Body Diode Reverse Recovery Charge Q rr IF=-1.3A, dI/dt=-100A/μs 8 12 Nc Maximum Body-Diode Continuous Current I S 1.3 A Diode Forward Voltage VSD IS=-1.3A,VGS=0V -1.2 V VGS=0V, VDS=-10V, f=1MHz VGS=-5.0V, VDS=-10V, ID=-4.3A pF nC ns Zero Gate Voltage Drain Current IDSS μA mΩ ID=-1.0A, VDS=-6.0V, RL=6Ω,RGEN=89Ω RDS(On) Static Drain-Source On-Resistance ■ Marking Marking 1F * TRLML6401

■ Typical Characterisitics Fig 4. Normalized On-Resistance Vs. Temperature Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics 0.1 1 10 100 -VDS, Drain-to-Source Voltage (V) 0.01 0.1 100 -ID,Drain-to-Source Current(A) -1.0V 20µs PULSE WIDTH Tj = 150°C VGS TOP -7.0V -5.0V -4.5V -3.0V -2.5V -1.8V -1.5V BOTTOM -1.0V -VGS, Gate-to-Source Voltage (V) 0.1 1.0 10.0 100.0 -ID,Drain-to-Source Current (Α) TJ = 25°C TJ = 150°C VDS = -12V 20µs PULSE WIDTH -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 T , Junction Temperature( C) R , Drain-to-Source On Resistance (Normalized) J DS(on) V = I = GS D -4.5V -4.3A 0.1 1 10 100 -VDS, Drain-to-Source Voltage (V) 0.01 0.1 100 -ID,Drain-to-Source Current(A) -1.0V 20µs PULSE WIDTH Tj = 25°C VGS TOP -7.0V -5.0V -4.5V -3.0V -2.5V - 1.8V -1.5V BOTTOM -1.0V TRLML6401

Fig 8. Maximum Safe Operating Area Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 0.1 100 1000 0.1 1 10 100 OPERATION IN THIS AREA LIMITED BY RDS(on) Single Pulse T T = 150 C = 25 C° C -V , Drain-to-Source Voltage (V) -I , Drain Current (A)I , Drain Current (A) DS D 10us 100us 1ms 10ms 1 10 100 VDS, Drain-to-Source Voltage (V) 200 400 600 800 1000 1200 C,Capacitance(pF) Coss Crss Ciss VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 0.1 100 -V ,Source-to-Drain Voltage (V) -I , Reverse Drain Current (A) SD SD V = 0 V GS T = 25 CJ ° T = 150 CJ ° 0 4 8 12 16 Q , Total Gate Charge (nC) -V , Gate-to-Source Voltage (V) G GS I =D -4.3A V =-10VDS ■ Typical Characterisitics TRLML6401

■ Typical Characterisitics Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Maximum Avalanche Energy Vs. Drain Current 25 50 75 100 125 150 0.0 1.0 2.0 3.0 4.0 5.0 T , Case Temperature ( C) -I , Drain Current (A) D 0.1 100 1000 Notes: 1. Duty factor D = t / t 2. Peak T = P x Z + T 1 2 J DM thJA A P t t DM t , Rectangular Pulse Duration (sec) Thermal Response (Z ) thJA 0.01 0.02 0.05 0.10 0.20 D = 0.50 SINGLE PULSE (THERMAL RESPONSE) 25 50 75 100 125 150 Starting T , Junction Temperature( C) E , Single Pulse Avalanche Energy (mJ) J AS ID TOP BOTTOM -1.9A -3.4A -4.3A TRLML6401

■ Typical Characterisitics Fig 13. Typical On-Resistance Vs. Drain Current Fig 12. Typical On-Resistance Vs. Gate Voltage 0 10 20 30 40 -ID , Drain Current ( A ) 0.00 0.05 0.10 0.15 0.20 RDS (on ),Drain-to -Source On Resista nce VGS = -4.5V VGS = -2.5VVGS = -1.8V Fig 14. Typical Threshold Voltage Vs. Junction Temperature -75 -50 -25 0 25 50 75 100 125 150 TJ , Temperature ( °C ) 0.3 0.4 0.5 0.6 0.7 0.8 -VGS(th)Gate threshold Voltage (V) ID = -250µA -VGS, Gate -to -Source Voltage ( V ) 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10 RDS(on), Drain-to -Source Voltage Id = -4.3A Ω Ω TRLML6401