TRF8010 TI | Alldatasheet
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900-MHz RF TRANSMIT DRIVER SLWS031B – JULY 1996– REVISED MAY 1997 1POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 /C0068Operates from 3.6-V and 4.8-V Power Supplies for AMPS/NADC and GSM Applications Respectively /C0068Unconditionally Stable /C0068Wide UHF Frequency Range
800 MHz to 1000 MHz
/C006821 dBm and 23 dBm Typical Output Power in AMPS/NADC and GSM Applications Respectively /C0068Linear Ramp Control /C0068Transmit Enable/Disable Control /C0068Advanced BiCMOS Processing Technology for Low-Power Consumption, High Efficiency, and Highly Linear Operation /C0068Minimum of External Components Required for Operation /C0068Surface-Mount Thermally Enhanced Package for Extremely Small Circuit Footprint
description
The TRF8010 is an RF transmit driver amplifier for 900-MHz digital, analog, and dual-mode communication applications. It consists of a two-stage amplifier and a linear ramp controller for burst control in TDMA (time division multiple access) applications. Very few external components are required for operation. The TRF8010 amplifies the RF signal from the preceding modulator and upconverter stages in an RF section of a transmitter to a level that is sufficient to drive a final RF power output device. The output impedance of RFOUT is approximately 50 W. But, since RFOUT is connected to an open-collector output device, minimal external matching is required. The device is enabled when the TXEN input is held high. A power control signal applied to the VPC input can ramp the RF output power up or down to meet ramp and spurious emission specifications in TDMA systems. The power control signal causes a linear change in output power as the voltage applied to VPC varies between 0 V and 3 V. With the RF input power applied to RFIN at 0 dBm and TXEN high, adjusting VPC from 0 V to 3 V increases the output power from a typical value of –54 dBm at VPC = 0 V to the output power appropriate for the application: /C006821 dBm typical for AMPS/NADC (Advanced Mobile Phone Service/North American Digital Cellular) operation /C006823 dBm typical for GSM (Global System for Mobile Communications) operation Forward isolation with the RF input power applied to RFIN at 0 dBm, VPC = 0 V, and TXEN high is typically greater than 50 dB. These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. GND GND RFIN GND NC VPC GND NC VBB GND GND GND RFOUT GND GND TXEN GND V CC VCC GND PWP PACKAGE (TOP VIEW) NC – No internal connection PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright 1997, Texas Instruments Incorporated
900-MHz RF TRANSMIT DRIVER SLWS031B – JULY 1996– REVISED MAY 1997
2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
description (continued) The TRF8010 is available in a small, surface-mount, thermally enhanced TSSOP 20-pin PWP (PowerPAD ) package and is characterized for operation from –40°C to 85°C. The PWP package has a solderable pad that can improve the package thermal performance by bonding the pad to an external thermal plane. The pad also acts as a low-inductance electrical path to ground and, for the TRF8010, must be electrically connected to the PCB ground plane as a continuation of the regular package terminals that are designated GND. functional block diagram Bias/Band Gap Reference Linear Ramp Control VCC VBB RFIN TXEN VPC RFOUT 12, 13 9 Terminal Functions TERMINAL I/O DESCRIPTION NAME NO. I/O DESCRIPTION 14, 16, 17, 19, 20 Analog ground for all internal analog circuits. All signals are referenced to the ground terminals. NC 5, 8 No connection. It is recommended that all NC terminals be connected to ground. RFIN 3 I RF input. RFIN accepts signals between 800 MHz and 1000 MHz. RFOUT 18 O RF output. RFOUT is an open-collector output and requires a decoupled connection to VCC for operation. TXEN 15 I Transmit enable input (digital). When TXEN is high, the output device is enabled. VBB 9 Control section supply voltage. VCC 12, 13 First stage bias. VPC 6 I Voltage power control. VPC is a signal between 0 V and 3 V that adjusts the output power from a typical value of –54 dBm to the maximum output power appropriate for the application. PowerPAD is a trademark of Texas Instruments Incorporated.
900-MHz RF TRANSMIT DRIVER SLWS031B – JULY 1996– REVISED MAY 1997 3POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 absolute maximum ratings over operating free-air temperature range (unless otherwise noted)† † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTES: 1. Voltage values are with respect to GND. 2. No air flow and with infinite heatsink 3. With the thermal pad of the device soldered to a 1-ounce copper (Cu) ground plane on an FR4 board with no air flow recommended operating conditions MIN NOM MAX UNIT Supply voltage, VCC (see Note 1) 3 5 V High-level input voltage at TXEN, VIH VCC –0.8 V Low-level input voltage at TXEN, VIL 0.8 V Operating free-air temperature, TA –40 85 °C NOTE 1: Voltage values are with respect to GND. electrical characteristics over full range of operating conditions supply current, VCC = 3.6 V PARAMETER TEST CONDITIONS MIN TYP ‡ MAX UNIT ICC Supply current from VCC Operating at maximum power out TXEN high, VPC = 3 V 163 mA ICC Supply current from VCC Operating at minimum power out TXEN high, VPC = 0 V 7 mA ‡ Typical values are at TA = 25/C0095C. supply current, VCC = 4.8 V PARAMETER TEST CONDITIONS MIN TYP ‡ MAX UNIT Operating at maximum power out TXEN high, VPC = 3 V 155 210 mA ICC Supply current from VCC Operating at minimum power out TXEN high, VPC = 0 V 7 mA Power down TXEN low, VPC = 0 V 0.05 mA ‡ Typical values are at TA = 25/C0095C.
900-MHz RF TRANSMIT DRIVER SLWS031B – JULY 1996– REVISED MAY 1997
4 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
AMPS/NADC operation, VCC = 3.6 V, TXEN high, VPC = 3 V, TA = 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Operating frequency range 824 849 MHz PO Outputpower PI = 0 dBm 21 dBmPO O utput power PI = 0 dBm VPC = 0 V –58 dBm Gain (small signal) PI = –20 dBm 27 dB Power added efficiency (PAE) PI = 0 dBm 28% Input return loss (internally matched) PI = –20 dBm 11 dB Output return loss (externally matched, small signal) PI = –20 dBm 11 dB Noise power in 30 kHz bandwidth 45 MHz offset at PI = 0 dBm –97 dBm Harmonics 2f0 PI= 0 dBm –20 dBcH armonics 3f0 PI = 0 dBm –50 dBc GSM operation, VCC = 4.8 V, TXEN high, VPC = 3 V, TA = 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Extended GSM operating frequency range 870 925 MHz PO Outputpower PI = 0 dBm 21.5 23 24.5 dBmPO O utput power PI = 0 dBm VPC = 0 V –54 dBm Gain (small signal) PI = –20 dBm 28 dB Power added efficiency (PAE) PI = 0 dBm 29% Input return loss (internally matched) PI = –20 dBm 11 dB Output return loss (externally matched, small signal) PI = –20 dBm 11 dB Harmonics 2f0 PI= 0 dBm –28 –22 dBcH armonics 3f0 PI = 0 dBm –40 –35 dBc Noisepower in 30 kHz bandwidth
20 MHz above f0 PI= 0 dBm
–95 dBmN oise power in 30 kHz bandw idth
10 MHz above f0
PI = 0 dBm –96 dBm stability, AMPS/NADC and GSM operation PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Stability Output VSWR † < 6:1 all phases, VCC < 5.6 V, P I = 0 dBm, PO ≤ 22 dBm, Output frequency band: 200 MHz – 1200 MHz † VSWR = voltage standing wave ratio ‡ No parasitic oscillations (all spurious < –70 dBc) switching characteristics AMPS/NADC and GSM operation, VCC = 3.6 V or 4.8 V, TA = 25°C PARAMETER TEST CONDITIONS MIN TYP MAX UNIT ton Switching time, RF output OFF to ON TXEN = high, VPC stepped from 0 V to 3 V 1 ms toff Switching time, RF output ON to OFF TXEN = high, VPC stepped from 3 V to 0 V 1 ms
900-MHz RF TRANSMIT DRIVER SLWS031B – JULY 1996– REVISED MAY 1997
6 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
–20 VPC – Power Control Input – V 0 0.5 1 1.5 2 2.5 –30 –40 –50 –60 –10 OUTPUT POWER vs VPC GAIN CONTROL RANGE PO – Output Power – dBm –40°C 25°C85°C PI = 0 dBm VCC = 4.8 V Freq = 900 MHz Figure 5 VCC – Supply Voltage – V 3 3.5 4 4.5 OUTPUT POWER vs SUPPLY VOLTAGE PO – Output Power – dBm 3.6 V AMPS/NADC Application Circuit VPC = 3 V Freq = 836 MHz R1 = 0 W 4.8 V Circuit VPC = 3 V Freq = 900 MHz R1 = 180 W Figure 6 f – Frequency – MHz 860 870 880 890 900 940 10.5 11.5 9.5 VCC = 4.8 V VPC = 3 V PI = –20 dBm INPUT RETURN LOSS vs FREQUENCY Input Return Loss – dB –40°C 85°C 910 920 930 25°C
900-MHz RF TRANSMIT DRIVER SLWS031B – JULY 1996– REVISED MAY 1997 7POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
APPLICATION INFORMATION
A typical application example for AMPS/NADC cellular telephone systems is shown in Figure 7. In all cases, a capacitor must be connected from the positive power supply to ground, as close as possible to the IC terminals for power supply bypassing. A dc-blocking capacitor is also required on the RF output. A list of components and their functions is given in Table 1. GND GND RFOUT GND GND TXEN GND VCC VCC GND GND GND RFIN GND NC VPC GND NC VBB GND RF OUTPUT L2C1 VCC TRF8010 RF INPUT l = 220 mils, w = 20 mils
50 W line,
w = 20 mils w = 20 mils Board Material: Type FR4, er = 4.3, h = 12 mils w = 20 mils Figure 7. Typical AMPS/NADC Cellular Telephone Application Table 1. External Component Selection (AMPS/NADC)
900-MHz RF TRANSMIT DRIVER SLWS031B – JULY 1996– REVISED MAY 1997
8 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
A typical application example for GSM cellular telephone systems is shown in Figure 8. In all cases, a capacitor must be connected from the positive power supply to ground, as close as possible to the IC terminals for power supply bypassing. A dc-blocking capacitor is also required on the RF output. A list of components and their functions is given in Table 2. GND GND RFOUT GND GND TXEN GND VCC VCC GND GND GND RFIN GND NC VPC GND NC VBB GND RF OUTPUT L2C1 VCC TRF8010 RF INPUT l = 220 mils, w = 20 mils w = 20 mils w = 20 mils Board Material: Type FR4, er = 4.3, h = 12 mils w = 20 mils Figure 8. Typical GSM Cellular Telephone Application Table 2. External Component Selection (GSM)
900-MHz RF TRANSMIT DRIVER SLWS031B – JULY 1996– REVISED MAY 1997 9POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 MECHANICAL DATA PWP (R-PDSO-G) PowerPAD PLASTIC SMALL-OUTLINE PACKAGE 0,25 0,50 0,75 0,15 NOM Gage Plane 4073225/E 03/97 6,60 6,20 0,30 0,19 4,30 4,50 A 1,20 MAX Seating Plane 0°–8° Thermal Pad (3,18 /C0002 2,41 NOM) (see Note C) 0,10 0,65 M0,10 9,80 7,90 9,607,70 5,10 5,10 4,904,90 DIM A MAX A MIN PINS 6,40 6,60 0,15 0,05 NOTES: A. All linear dimensions are in millimeters. B. This drawing is subject to change without notice. C. The package thermal performance may be enhanced by bonding the thermal pad to an external thermal plane. This solderable pad is electrically and thermally connected to the backside of the die and leads 1, 10, 11, and 20. PowerPAD is a trademark of Texas Instruments Incorporated.
Texas Instruments (TI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. TI warrants performance of its semiconductor products and related software to the specifications applicable at the time of sale in accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements. Certain applications using semiconductor products may involve potential risks of death, personal injury, or severe property or environmental damage (“Critical Applications”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS OR OTHER CRITICAL APPLICATIONS. Inclusion of TI products in such applications is understood to be fully at the risk of the customer. Use of TI products in such applications requires the written approval of an appropriate TI officer. Questions concerning potential risk applications should be directed to TI through a local SC sales office. In order to minimize risks associated with the customer’s applications, adequate design and operating safeguards should be provided by the customer to minimize inherent or procedural hazards. TI assumes no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor does TI warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property right of TI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. Copyright 1996, Texas Instruments Incorporated