TRF7003 TI | Alldatasheet
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SLWS058C – APRIL 1997 – REVISED JULY 1998 1POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 /C0068Wide Operating Frequency Range up to
1000 MHz
/C0068High Output Power: – Typical Value of 32 dBm at 4.8 V and 900 MHz – Typical Value of 29 dBm at 3.6 V and
900 MHz
/C0068High Gain: – Typical Value of 9 dB at 4.8 V and
900 MHz at 32-dBm Output Power
/C0068High Power-Added Efficiency (PAE): – Typical Value of 50% at 32-dBm Output Power /C0068Low Cost /C0068Extremely Rugged: – Sustains 20:1 Load Mismatch /C0068Suitable for Various Wireless Applications /C0068Low Leakage Current <1 /C0109A /C0068SOT-89 Plastic Power Package /C00681000 V Human Body Model ESD Protection on Gate and Drain
description
The TRF7003 power amplifier is a silicon, metal-oxide semiconductor, field-effect transistor (MOSFET) manufactured using the Texas Instruments RFMOS process. It is housed in a SOT-89 (PK) plastic power package. The TRF7003, suitable for a variety of wireless applications, has been characterized for global systems for mobile communications (GSM) power amplifier applications. The TRF7003, a rugged, low-cost device, operates from a single-polarity positive power supply and has low leakage current. Typical power output at 900 MHz is 32 dBm, with an associated power gain of 9 dB and 50-percent power-added efficiency (PAE). Copyright 1998, Texas Instruments IncorporatedPRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. GSD PK PACKAGE (TOP VIEW) These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. RFMOS is a trademark of Texas Instruments Incorporated.
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absolute maximum ratings over operating free-air temperature range (unless otherwise noted)† † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under ”recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTE 1: With infinite heatsink and no air flow electrical characteristics over operating free-air temperature range (unless otherwise noted) dc characteristics PARAMETER TEST CONDITIONS ‡ LIMITS UNITSPARAMETER TEST CONDITIONS ‡ MIN TYP MAX UNITS ID Saturated drain current VDS = 4.8 V, VGS = 1.7 V 0.7 A gm Transconductance VDS = 4.8 V, VGS = 1.7 V 1000 mS V(TO) Threshold voltage VDS = 100mV, IDS = 1.5 mA 1.0 V V(BR)sd Source-drain breakdown voltage Ids = 40 µA, Source is grounded VGS = 0 V 16 V Leakage current VDS = 4.8 V VGS = 0 V <1 µA ‡ TA = 25°C RF characteristics, VDS = 4.8 V, VGS = 1.7 V PARAMETER TEST CONDITIONS § LIMITS UNITSPARAMETER TEST CONDITIONS § MIN TYP MAX UNITS Output power Frequency = 900 MHz, PI = 23 dBm 31 32 dBm Power gain Frequency = 900 MHz, PI = 23 dBm 9 dB ηadd Power added efficiency Frequency = 900 MHz, PI = 23 dBm 45% 50% Ruggedness test Frequency = 900 MHz, Load VSWR = 20:1, PI = 23 dBm, All phase angles § TA = 25°C, fixed matching circuit ¶ No degradation in output power after test.
SLWS058C – APRIL 1997 – REVISED JULY 1998 3POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TYPICAL CHARACTERISTICS Figure 1 TA = –40°C TA = 25°C TA = 85°C
4.8 V GSM Application Circuit
VDS = 4.8 V VGS = 1.7 V Frequency = 900 MHz 0 5 10 15 – Output Power – dBm OUTPUT POWER vs INPUT POWER 20 25 PO PI – Input Power – dBm Figure 2 VDS = 4.8 V VGS = 1.7 V PI = 23 dBm TA = –40°C TA = 25°C TA = 85°C 850 870 890 910 f – Frequency – MHz OUTPUT POWER vs FREQUENCY 930 950 – Output Power – dBmPO Figure 3 TA = –40°C TA = 25°C TA = 85°C VGS = 1.7 V PI = 23 dBm Frequency = 900 MHz 3 3.5 4 4.5 OUTPUT POWER vs DRAIN VOLTAGE 5 5.5 6 – Output Power – dBmPO VDD – Drain Voltage – V TA = –40°C TA = 25°C TA = 85°C VDD = 4.8 V PI = 23 dBm Frequency = 900 MHz 1 1.2 1.4 1.6 OUTPUT POWER vs GATE VOLTAGE (MAX POWER ADDED EFFICIENCY TUNING) 1.8 2 – Output Power – dBmPO VGS – Gate Voltage – V Figure 4
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TA = –40°C TA = 25°C TA = 85°C VDS = 4.8 V VGS = 1.7 V Frequency = 900 MHz 0 5 10 15 PAE – Power Added Efficiency – % POWER ADDED EFFICIENCY vs INPUT POWER 20 25 PI – Input Power – dBm Figure 6 850 870 890 910 PAE – Power Added Efficiency – % f – Frequency – MHz POWER ADDED EFFICIENCY vs FREQUENCY 930 950 TA = –40°C TA = 25°C VDS = 4.8 V VGS = 1.7 V PI = 23 dBm TA = 85°C Figure 7 3 3.5 4 4.5 PAE – Power Added Efficiency – % POWER ADDED EFFICIENCY vs DRAIN VOLTAGE 5 5.5 6 VDD – Drain Voltage – V TA = –40°C TA = 25°C TA = 85°C VGS = 1.7 V PI = 23 dBm Frequency = 900 MHz Figure 8 PI – Input Power – dBm 0 5 10 15 GP – Power Gain – dB POWER GAIN vs INPUT POWER 20 25 TA = –40°C TA = 25°C TA = 85°C VDS = 4.8 V VGS = 1.7 V Frequency = 900 MHz
Table 1 lists the small signal scattering parameters of the TRF7003. Table 1. Small Signal Scattering Parameters, VDS = 4.8 V, VGS = 1.7 V
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APPLICATION INFORMATION
w = 22 mils l = 70 mils RF out w = 22 mils l = 430 mils C3 C4 TRF7003 RF in w = 22 mils l = 50 mils C1 C2 VDS Board Material Specifications: Type FR4 ; εr = 4.3 ; h = 12 mils 50 Ω line w = 22 mils l = 950 mils 50 Ω line w = 22 mils l = λ/4 Figure 10. Recommended Application Circuit for 4.8-V GSM Table 2 lists the TRF7003 components for the recommended 4.8-V GSM application circuit. Table 2. Component List
SLWS058C – APRIL 1997 – REVISED JULY 1998 7POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 MECHANICAL DATA PK (R-PSSO-F3) PLASTIC SINGLE-IN-LINE PACKAGE 4040234/B 03/95 1,50 TYP 0,48 MAX 0,53 MAX 0,40 TYP 2,60 2,40 4,60 4,40 0,44 MAX 4,25 MAX 0,80 MIN 1,80 MAX 1,60 1,40 NOTES: A. All linear dimensions are in millimeters. B. This drawing is subject to change without notice. C. The center lead is in electrical contact with the tab.
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