TRF370333IRGER

TRF370315_15 TI1 | Alldatasheet

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RF_OUT RGE□PACKAGE (TOP VIEW) VCC GND BBINBBIPGNDGND 24 23 22 21 20 19 GND 3LOP 4LON 5GND GND 7 8 9 BBQN 10 1 1 BBQPGND GND

18 VCC

17 GND

www.ti.com SLWS184J –MARCH 2006–REVISED MAY 2011 0.35-GHzTO4-GHzQUADRATUREMODULATORS Check forSamples: TRF370315 ,TRF370333 1FEATURES APPLICATIONS 2• 75-dBc Single-CarrierWCDMA ACPR • CellularBase TransceiverStationTransmit at–11-dBm Channel Power Channel

Low Noise Floor:–163 dBm/Hz • CDMA: IS95,UMTS, CDMA2000, TD-SCDMA
OIP3 of23 dBm • TDMA: GSM, IS-136,EDGE/UWC-136
P1dB of9 dBm • WirelessLocalLoop
Unadjusted CarrierFeedthrough of–40 dBm • WirelessMAN Wideband Transceivers SPACE• Unadjusted Side-Band Suppression of–40 dBc THE FINAL FRONTIER• SingleSupply:4.5V–5.5V Operation
SiliconGermanium Technology
TRF370333 With 3.3-VCM atI,Q Baseband Inputs
TRF370315 With 1.5-VCM atI,Q Baseband Inputs

DESCRIPTION

The TRF370315 and TRF370333 are low-noisedirectquadraturemodulators,capableof convertingcomplex modulated signalsfrom baseband or IF directlyup to RF. The TRF370315 and TRF370333 are idealfor high-performancedirectRF modulationfrom 350 MHz up to 4 GHz. These modulatorsare implementedas a double-balancedmixer.The RF outputblockconsistsof a differentialto single-endedconverterand an RF amplifiercapableofdrivinga single-ended50-Ω loadwithoutany need ofexternalcomponents.The TRF370333 and TRF370315 devices have differentcommon-mode voltageratingsat the I/Q baseband inputs.The TRF370315 requiresa 1.5-V common-mode voltage,and the TRF370333 requiresa 3.3-V common-mode voltage. Pleasebe aware thatan importantnoticeconcerningavailability,standardwarranty,and use incriticalapplicationsofTexas Instrumentssemiconductorproductsand disclaimerstheretoappearsattheend ofthisdatasheet. 2Alltrademarksarethepropertyoftheirrespectiveowners. PRODUCTION DATA informationiscurrentas ofpublicationdate. Copyright© 2006–2011,Texas InstrumentsIncorporatedProductsconform to specificationsper the terms of the Texas Instrumentsstandardwarranty.Productionprocessingdoes not necessarilyincludetestingofallparameters.

RF_OUT16

14 GND

/c83 NC NC B0175-01 NC NC NC TRF370315 TRF370333 SLWS184J –MARCH 2006–REVISED MAY 2011 www.ti.com This integratedcircuitcan be damaged by ESD. Texas Instrumentsrecommends thatallintegratedcircuitsbe handled with appropriateprecautions.Failuretoobserveproperhandlingand installationprocedurescan cause damage. ESD damage can rangefromsubtleperformancedegradationtocompletedevicefailure.Precisionintegratedcircuitsmay be more susceptibletodamage because verysmallparametricchanges couldcause thedevicenottomeet itspublishedspecifications. FUNCTIONAL BLOCK DIAGRAM NOTE: NC = No connection

2 Copyright© 2006–2011,Texas InstrumentsIncorporated

www.ti.com SLWS184J –MARCH 2006–REVISED MAY 2011 DEVICE INFORMATION TERMINAL FUNCTIONS TERMINAL I/O DESCRIPTION NAME NO. BBIN 22 I In-phaseinput BBIP 21 I In-phaseinput BBQN 9 I In-quadratureinput BBQP 10 I In-quadratureinput 2,5,8,11, GND 12,14,17, – Ground 19,20,23 LON 4 I Localoscillatorinput LOP 3 I Localoscillatorinput 1,6,7,13,NC – No connect15 RF_OUT 16 O RF output VCC 18,24 – Power supply ABSOLUTE MAXIMUM RATINGS (1) Over operatingfree-airtemperaturerange(unlessotherwisenoted). VALUE (2) UNIT Supplyvoltagerange –0.3V to6 V DigitalI/Ovoltagerange –0.3V toVI+ 0.3 V TJ Operatingvirtualjunctiontemperaturerange –40 to150 °C TA Operatingambienttemperaturerange –40 to85 °C Tstg Storagetemperaturerange –65 to150 °C Human body model (HBM) 75 V ESD Electrostaticdischargeratings Charged devicemodel (CDM) 75 V (1) Stressesbeyond thoselistedunderAbsoluteMaximum Ratingsmay cause permanentdamage tothedevice.These arestressratings only,and functionaloperationofthedeviceattheseorany otherconditionsbeyond thoseindicatedunderRecommended Operating Conditionsisnotimplied.Exposuretoabsolute-maximum-ratedconditionsforextendedperiodsmay affectdevicereliability. (2) Allvoltagevaluesarewithrespecttonetworkgroundterminal. RECOMMENDED OPERATING CONDITIONS Over operatingfree-airtemperaturerange(unlessotherwisenoted). MIN NOM MAX UNIT VCC Power-supplyvoltage 4.5 5 5.5 V THERMAL CHARACTERISTICS PARAMETER TEST CONDITIONS VALUE UNIT R θJA Thermalresistance,junction-to-ambientHigh-Kboard,stillair 29.4 °C/W R θJC Thermalresistance,junction-to-case 18.6 °C/W Copyright© 2006–2011,Texas InstrumentsIncorporated 3

SLWS184J –MARCH 2006–REVISED MAY 2011 www.ti.com

ELECTRICAL CHARACTERISTICS

Over operatingfree-airtemperaturerange(unlessotherwisenoted). PARAMETER TEST CONDITIONS MIN TYP MAX UNIT DC Parameters Totalsupplycurrent(1.5V CM) TA = 25°C 195 205 ICC mA Totalsupplycurrent(3.3V CM) TA = 25°C 210 235 LO Input(50-Ω,Single-Ended) LO frequencyrange 0.35 4 GHz fLO LO inputpower –5 0 12 dBm LO portreturnloss 15 dB Baseband Inputs TRF370333 3.3 VCM Iand Q inputdc common voltage V TRF370315 1.5 BW 1-dB inputfrequencybandwidth 350 MHz Inputimpedance,resistance 10 kΩ TRF370333 Inputimpedance,parallelcapacitance 3 pFZI(single ended) Inputimpedance,resistance 5 kΩ TRF370315 Inputimpedance,parallelcapacitance 3 pF Over recommended operatingconditions,power supply= 5 V,TA = 25°C, fLO = 350 MHz at0 dBm, TRF370333 (unless otherwisenoted). RF Output Parameters PARAMETER TEST CONDITIONS MIN TYP MAX UNIT TRF370315: OutputRMS voltageoverinputI(orQ) RMS –4.18 dBvoltage G Voltagegain(1) TRF370333: OutputRMS voltageoverinputI(orQ) RMS –4.0 dBvoltage P1dB Outputcompressionpoint 9.4 dBm IP3 OutputIP3 24.5 dBm IP2 OutputIP2 Measured atfLO + 2 × fBB 73.8 dBm Carrierfeedthrough Unadjusted 35.6 dBm Sidebandsuppression Unadjusted 33.8 dBc DC onlytoBB inputs,13 MHz offsetfromfLO –158.0 Outputnoisefloor 1.8-MHz offsetfromfLO ;1 CW tone;Pout= 0 dBm –152.6 dBm/Hz 6-MHz offsetfromfLO ;1 CW tone;Pout= 0 dBm –157.4 (1) Single4-MHz CW baseband inputtone,differential-ended196 VRMS . Over recommended operatingconditions,power supply= 5 V,TA = 25°C, fLO = 400 MHz at0 dBm, TRF370315 (unless otherwisenoted). RF Output Parameters PARAMETER TEST CONDITIONS MIN TYP MAX UNIT TRF370315: OutputRMS voltageoverinputI(orQ) RMS –2.409 dBvoltage G Voltagegain(1) TRF370333: OutputRMS voltageoverinputI(orQ) RMS –1.905 dBvoltage P1dB Outputcompressionpoint 9.4 dBm IP3 OutputIP3 20 23 dBm IP2 OutputIP2 Measured atfLO + 2 × fBB 62 dBm Carrierfeedthrough Unadjusted –37 dBm Sidebandsuppression Unadjusted –39 dBc (1) Single4-MHz CW baseband inputtone,differential-ended196 VRMS .

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www.ti.com SLWS184J –MARCH 2006–REVISED MAY 2011 Over recommended operatingconditions,power supply= 5 V,TA = 25°C, fLO = 900 MHz at0 dBm, TRF370315 (unless otherwisenoted). RF Output Parameters PARAMETER TEST CONDITIONS MIN TYP MAX UNIT TRF370315: OutputRMS voltageoverinputI(or –3.552 dBQ) RMS voltage G Voltagegain(1) TRF370333: OutputRMS voltageoverinputI(or –2.79 dBQ) RMS voltage P1dB Outputcompressionpoint 9 dBm IP3 OutputIP3 20 23 dBm IP2 OutputIP2 Measured atfLO + 2 × fBB 63 dBm Carrierfeedthrough Unadjusted –37 dBm Sidebandsuppression Unadjusted –42 dBc Outputreturnloss 9 dB DC onlytoBB inputs,13 MHz offsetfromfLO –160.4 Outputnoisefloor 1.8-MHz offsetfromfLO ;1 CW tone;Pout= 0 dBm –156.6 dBm/Hz 6-MHz offsetfromfLO ;1 CW tone;Pout= 0 dBm –158.5 1 EDGE signal,Pout= –5 dBm 0.59% 1 EDGE signal,Pout= 0 dBm 0.63%EVM Errorvectormagnitude(rms)

1 EDGE signal,Pout= 0 dBm, 2nd harmonicofLO 1%= –15 dBm, 3rdharmonicofLO = –33 dBm (2)

(1) Single4-MHz CW baseband inputtone,differential-ended196 VRMS . (2) The second-and third-harmonictestswere made independentlyateach frequency. Over recommended operatingconditions,power supply= 5 V,TA = 25°C, fLO = 1800 MHz at0 dBm, TRF370315 (unless otherwisenoted). RF Output Parameters PARAMETER TEST CONDITIONS MIN TYP MAX UNIT TRF370315: OutputRMS voltageoverinputI(or –3.345 dBQ) RMS voltage G Voltagegain(1) TRF370333: OutputRMS voltageoverinputI(or –2.367 dBQ) RMS voltage P1dB Outputcompressionpoint 9.5 dBm IP3 OutputIP3 20 23 dBm IP2 OutputIP2 Measured atfLO + 2 × fBB 55 dBm Carrierfeedthrough Unadjusted –40 dBm Sidebandsuppression Unadjusted –47 dBc Outputreturnloss 8 dB DC onlytoBB inputs,13 MHz offsetfromfLO –162.6 Outputnoisefloor 1.8-MHz offsetfromfLO ;1 CW tone;Pout= 0 dBm –160 dBm/Hz 6-MHz offsetfromfLO ;1 CW tone;Pout= 0 dBm –159.4 1 EDGE signal,Pout= –5 dBm 0.66% 1 EDGE signal,Pout= 0 dBm 0.74%EVM Errorvectormagnitude(rms) 1 EDGE signal,Pout= 0 dBm, 2nd harmonicofLO 1%= –15.5dBm, 3rdharmonicofLO = –30 dBm (2) (1) Single4-MHz CW baseband inputtone,differential-ended196 VRMS . (2) The second-and third-harmonictestswere made independentlyateach frequency. Copyright© 2006–2011,Texas InstrumentsIncorporated 5

SLWS184J –MARCH 2006–REVISED MAY 2011 www.ti.com Over recommended operatingconditions,power supply= 5 V,TA = 25°C, fLO = 1960 MHz at0 dBm, TRF370315 (unless otherwisenoted). RF Output Parameters PARAMETER TEST CONDITIONS MIN TYP MAX UNIT TRF370315: OutputRMS voltageoverinputI(or –3.449 dBQ) RMS voltage G Voltagegain(1) TRF370333: OutputRMS voltageoverinputI(or –2.479 dBQ) RMS voltage P1dB Outputcompressionpoint 9.5 dBm OutputIP3,TRF370315 20 23 IP3 dBm OutputIP3,TRF370333 18 20 IP2 OutputIP2 Measured atfLO + 2 × fBB 55 dBm Carrierfeedthrough Unadjusted –40 dBm Sidebandsuppression Unadjusted –47 dBc Outputreturnloss 8 dB DC onlytoBB inputs,13 MHz offsetfromfLO –162.6 Outputnoisefloor 1.8-MHz offsetfromfLO ;1 CW tone;Pout= 0 dBm –160 dBm/Hz 6-MHz offsetfromfLO ;1 CW tone;Pout= 0 dBm –159.4 1 EDGE signal,Pout= –5 dBm 0.66% 1 EDGE signal,Pout= 0 dBm 0.74%EVM Errorvectormagnitude(rms) 1 EDGE signal,Pout= 0 dBm, 2nd harmonicofLO 1%= –15.5dBm, 3rdharmonicofLO = –30 dBm (2) (1) Single4-MHz CW baseband inputtone,differential-ended196 VRMS . (2) The second-and third-harmonictestswere made independentlyateach frequency. Over recommended operatingconditions,power supply= 5 V,TA = 25°C, fLO = 2140 MHz at0 dBm, TRF370315 (unless otherwisenoted). RF Output Parameters PARAMETER TEST CONDITIONS MIN TYP MAX UNIT TRF370315: OutputRMS voltageoverinputI(or –3.432 dBQ) RMS voltage G Voltagegain(1) TRF370333: OutputRMS voltageoverinputI(or –2.791 dBQ) RMS voltage P1dB Outputcompressionpoint 9.5 dBm OutputIP3,TRF370315 20 23 IP3 dBm OutputIP3,TRF370333 18 21 IP2 OutputIP2 Measured atfLO + 2 × fBB 58 dBm Carrierfeedthrough Unadjusted –40 dBm Sidebandsuppression Unadjusted –47 dBc Outputreturnloss 8.5 dB 20-MHz offsetfromfLO ;dc onlytoBB inputs –163 Outputnoisefloor dBm/Hz20-MHz offsetfromfLO ;1 WCDMA signal; –162Pin= –20.5dBVrms (Iand Q input) 1 WCDMA signal;Pout= –13 dBm –75.8 Adjacent-channelpowerACPR 1 WCDMA signal;Pout= –9 dBm –72 dBcratio

4 WCDMA signals;Pout= –23 dBm percarrier –68

1 WCDMA signal;Pout= –13 dBm –79

Alternate-channelpower 1 WCDMA signal;Pout= –9 dBm –80.5 dBcratio

4 WCDMA signals;Pout= –23 dBm percarrier –69

(1) Single4-MHz CW baseband inputtone,differential-ended196 VRMS .

6 Copyright© 2006–2011,Texas InstrumentsIncorporated

www.ti.com SLWS184J –MARCH 2006–REVISED MAY 2011 Over recommended operatingconditions,power supply= 5 V,TA = 25°C, fLO = 2500 MHz at0 dBm, TRF370315 (unless otherwisenoted). RF Output Parameters PARAMETER TEST CONDITIONS MIN TYP MAX UNIT TRF370315: OutputRMS voltageoverinputI(or –2.892 dBQ) RMS voltage G Voltagegain(1) TRF370333: OutputRMS voltageoverinputI(or –1.379 dBQ) RMS voltage P1dB Outputcompressionpoint 9.5 dBm IP3 OutputIP3 18 21 dBm IP2 OutputIP2 Measured atfLO + 2 × fBB 63 dBm Carrierfeedthrough Unadjusted –38 dBm Sidebandsuppression Unadjusted –47 dBc (1) Single4-MHz CW baseband inputtone,differential-ended196 VRMS . Over recommended operatingconditions,power supply= 5 V,TA = 25°C, fLO = 3600 MHz at0 dBm, TRF370315 (unless otherwisenoted). RF Output Parameters PARAMETER TEST CONDITIONS MIN TYP MAX UNIT TRF370315: OutputRMS voltageoverinputI(or –1.265 dBQ) RMS voltage G Voltagegain(1) TRF370333: OutputRMS voltageoverinputI(or 1.529 dBQ) RMS voltage P1dB Outputcompressionpoint 9.5 dBm IP3 OutputIP3 20 23 dBm IP2 OutputIP2 Measured atfLO + 2 × fBB 63 dBm Carrierfeedthrough Unadjusted –41 dBm Sidebandsuppression Unadjusted –45 dBc (1) Single4-MHz CW baseband inputtone,differential-ended196 VRMS . Over recommended operatingconditions,power supply= 5 V,TA = 25°C, fLO = 4000 MHz at0 dBm, TRF370315 (unless otherwisenoted). RF Output Parameters PARAMETER TEST CONDITIONS MIN TYP MAX UNIT TRF370315: OutputRMS voltageoverinputI(or –2.242 dBQ) RMS voltage G Voltagegain(1) TRF370333: OutputRMS voltageoverinputI(or 0.543 dBQ) RMS voltage P1dB Outputcompressionpoint 9 dBm IP3 OutputIP3 19 22 dBm IP2 OutputIP2 Measured atfLO + 2 × fBB 50 dBm Carrierfeedthrough Unadjusted –37 dBm Sidebandsuppression Unadjusted –40 dBc (1) Single4-MHz CW baseband inputtone,differential-ended196 VRMS . Copyright© 2006–2011,Texas InstrumentsIncorporated 7

0.01 0.1 1 VBB Baseband Voltage, Single-Ended, RMS V/c45 /c45 /c45 /c45 /c45 /c45 P Output Power at 1.8 GHz dBm OUT /c45 /c45 TRF3703-15 TRF3703-33 TRF3703-15 TRF3703-33 f − Frequency − MHz −10 0 500 1000 1500 2000 2500 3000 3500 4000 4500 POUT − Output Power − dBm G010 –40°C 25°C 85°C LO = 0 dB VCC = 5 V f − Frequency − MHz −10 0 500 1000 1500 2000 2500 3000 3500 4000 4500 POUT − Output Power − dBm G011 LO = 0 dB TA = 25°C 4.5 V 5.5 V 5 V f − Frequency − MHz 0 500 1000 1500 2000 2500 3000 3500 4000 4500 POUT − Output Power − dBm G012 VCC = 5 V TA = 25°C –5 dBm 5 dBm 0 dBm TRF370315 TRF370333 SLWS184J –MARCH 2006–REVISED MAY 2011 www.ti.com TYPICAL CHARACTERISTICS OUTPUT POWER OUTPUT POWER vs vs BASEBAND VOLTAGE FREQUENCY AND TEMPERATURE Figure1. Figure2. OUTPUT POWER OUTPUT POWER vs vs FREQUENCY AND SUPPLY VOLTAGE FREQUENCY AND LO POWER Figure3. Figure4.

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f − Frequency − MHz 0 500 1000 1500 2000 2500 3000 3500 4000 4500 P1dB − dBm G001 –40°C25°C LO = 0 dB VCC = 5 V 85°C f − Frequency − MHz 0 500 1000 1500 2000 2500 3000 3500 4000 4500 P1dB − dBm G002 4.5 V LO = 0 dB TA = 25°C 5.5 V 5 V 0 500 1000 1500 2000 2500 3000 3500 4000 4500 f − Frequency − MHz OIP3 − dBm G014 LO = 0 dBm VCC = 5 V –40°C 25°C 85°C f − Frequency − MHz 0 500 1000 1500 2000 2500 3000 3500 4000 4500 P1dB − dBm G003 –5 dBm VCC = 5 V TA = 25°C 0 dBm 5 dBm TRF370315 TRF370333 www.ti.com SLWS184J –MARCH 2006–REVISED MAY 2011 TYPICAL CHARACTERISTICS (continued) P1dB P1dB vs vs FREQUENCY AND TEMPERATURE FREQUENCY AND SUPPLY VOLTAGE Figure5. Figure6. TRF370315 P1dB OIP3 vs vs FREQUENCY AND LO POWER FREQUENCY AND TEMPERATURE Figure7. Figure8. Copyright© 2006–2011,Texas InstrumentsIncorporated 9

f − Frequency − MHz 0 500 1000 1500 2000 2500 3000 3500 4000 4500 OIP3 − dBm G027 LO = 0 dB VCC = 5 V –40°C 25°C85°C 0 500 1000 1500 2000 2500 3000 3500 4000 4500 f − Frequency − MHz OIP3 − dBm G015 LO = 0 dBm TA = 25°C 5.5 V 4.5 V 5 V f − Frequency − MHz 0 500 1000 1500 2000 2500 3000 3500 4000 4500 OIP3 − dBm G028 LO = 0 dB TA = 25°C 4.5 V 5.5 V 5 V 0 500 1000 1500 2000 2500 3000 3500 4000 4500 f − Frequency − MHz OIP3 − dBm G013 +5 dBm 0 dBm –5 dBm VCC = 5 V TA = 25°C TRF370315 TRF370333 SLWS184J –MARCH 2006–REVISED MAY 2011 www.ti.com TYPICAL CHARACTERISTICS (continued) TRF370333 TRF370315 OIP3 OIP3 vs vs FREQUENCY AND TEMPERATURE FREQUENCY AND SUPPLY VOLTAGE Figure9. Figure10. TRF370333 TRF370315 OIP3 OIP3 vs vs FREQUENCY AND SUPPLY VOLTAGE FREQUENCY AND LO POWER Figure11. Figure12.

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0 500 1000 1500 2000 2500 3000 3500 4000 4500 f − Frequency − MHz OIP3 − dBm G029 0 dBm –5 dBm VCC = 5 V TA = 25°C +5 dBm f − Frequency − MHz −60 −50 −40 −30 −20 −10 0 500 1000 1500 2000 2500 3000 3500 4000 4500 SS − Unadjusted Sideband Suppression − dBc G007 LO = 0 dB POUT = –3 dBm VCC = 5 V –40°C 85°C 25°C f − Frequency − MHz −60 −50 −40 −30 −20 −10 0 500 1000 1500 2000 2500 3000 3500 4000 4500 SS − Unadjusted Sideband Suppression − dBc G008 LO = 0 dB POUT = –3 dBm TA = 25°C 4.5 V 5.5 V 5 V f − Frequency − MHz −60 −50 −40 −30 −20 −10 0 500 1000 1500 2000 2500 3000 3500 4000 4500 SS − Unadjusted Sideband Suppression − dBc G009 VCC = 5 V POUT = –3 dBm TA = 25°C –5 dBm 5 dBm 0 dBm TRF370315 TRF370333 www.ti.com SLWS184J –MARCH 2006–REVISED MAY 2011 TYPICAL CHARACTERISTICS (continued) TRF370333 OIP3 UNADJUSTED SIDEBAND SUPPRESSION vs vs FREQUENCY AND LO POWER FREQUENCY AND TEMPERATURE Figure13. Figure14. UNADJUSTED SIDEBAND SUPPRESSION UNADJUSTED SIDEBAND SUPPRESSION vs vs FREQUENCY AND SUPPLY VOLTAGE FREQUENCY AND LO POWER Figure15. Figure16. Copyright© 2006–2011,Texas InstrumentsIncorporated 11

−80 −70 −60 −50 −40 −30 −20 900 920 940 960 980 1000 f − Frequency − MHz SS − Adjusted Sideband Suppression − dBc G016 25°C 85°C Adj at 942.6 MHz VCC = 5 V –40°C −80 −70 −60 −50 −40 −30 −20 1850 1870 1890 1910 1930 1950 f − Frequency − MHz SS − Adjusted Sideband Suppression − dBc G017 25°C 85°C Adj at 1900 MHz VCC = 5 V –40°C f − Frequency − GHz −168 −166 −164 −162 −160 −158 −156 −154 Noise at 13-MHz Offset − dBm/Hz G019 4.5 V 5.5 V 5 V POUT = –5 dBm LO = 5 dBm TA = 25°C −80 −70 −60 −50 −40 −30 −20 2100 2120 2140 2160 2180 2200 f − Frequency − MHz SS − Adjusted Sideband Suppression − dBc G018 Adj at 2140 MHz VCC = 5 V 25°C 85°C –40°C TRF370315 TRF370333 SLWS184J –MARCH 2006–REVISED MAY 2011 www.ti.com TYPICAL CHARACTERISTICS (continued) ADJUSTED SIDEBAND SUPPRESSION ADJUSTED SIDEBAND SUPPRESSION vs vs FREQUENCY AND TEMPERATURE FREQUENCY AND TEMPERATURE Figure17. Figure18. ADJUSTED SIDEBAND SUPPRESSION NOISE AT 13-MHz OFFSET (dBm/Hz) vs vs FREQUENCY AND TEMPERATURE FREQUENCY AND SUPPLY VOLTAGE Figure19. Figure20.

12 Copyright© 2006–2011,Texas InstrumentsIncorporated

f − Frequency − GHz −168 −166 −164 −162 −160 −158 −156 −154 Noise at 13-MHz Offset − dBm/Hz G020 85°C –40°C 25°C POUT = 0 dBm LO = 5 dBm VCC = 5 V f − Frequency − GHz −168 −166 −164 −162 −160 −158 −156 −154 Noise at 13-MHz Offset − dBm/Hz G021 85°C –40°C 25°C POUT = –5 dBm LO = 5 dBm VCC = 5 V f − Frequency − GHz −168 −166 −164 −162 −160 −158 −156 −154 Noise at 13-MHz Offset − dBm/Hz G022 85°C –40°C 25°C POUT = –10 dBm LO = 5 dBm VCC = 5 V f − Frequency − MHz −80 −70 −60 −50 −40 −30 −20 −10 0 500 1000 1500 2000 2500 3000 3500 4000 4500 CS − Unadjusted Carrier Feedthrough − dBm G025 LO = 0 dB TA = 25°C 4.5 V 5.5 V 5 V TRF370315 TRF370333 www.ti.com SLWS184J –MARCH 2006–REVISED MAY 2011 TYPICAL CHARACTERISTICS (continued) NOISE AT 13-MHz OFFSET (dBm/Hz) NOISE AT 13-MHz OFFSET (dBm/Hz) vs vs FREQUENCY AND TEMPERATURE FREQUENCY AND TEMPERATURE Figure21. Figure22. NOISE AT 13-MHz OFFSET (dBm/Hz) UNADJUSTED CARRIER FEEDTHROUGH vs vs FREQUENCY AND TEMPERATURE FREQUENCY AND SUPPLY VOLTAGE Figure23. Figure24. Copyright© 2006–2011,Texas InstrumentsIncorporated 13

f − Frequency − MHz −80 −70 −60 −50 −40 −30 −20 −10 0 500 1000 1500 2000 2500 3000 3500 4000 4500 CS − Unadjusted Carrier Feedthrough − dBm G026 LO = 0 dB VCC = 5 V 85°C –40°C 25°C TRF370315 TRF370333 SLWS184J –MARCH 2006–REVISED MAY 2011 www.ti.com TYPICAL CHARACTERISTICS (continued) UNADJUSTED CARRIER FEEDTHROUGH vs FREQUENCY AND TEMPERATURE Figure25.

14 Copyright© 2006–2011,Texas InstrumentsIncorporated

www.ti.com SLWS184J –MARCH 2006–REVISED MAY 2011 APPLICATION INFORMATION AND EVALUATION BOARD Basic Connections

See Figure26 forproperconnectionoftheTRF3703315 and TRF370333 modulator.
Connect a singlepower supply(4.5V–5.5V) topins18 and 24.These pinsshouldbe decoupledas shown on pins4,5,6,and 7.
Connectpins2,5,8,11,12,14,17,19,20,and 23 toGND.
Connect a single-endedLO sourceofdesiredfrequencytoLOP (amplitudebetween –5 dBm and 12 dBm). Thisshouldbe ac-coupledthrougha 100-pFcapacitor.
Terminatetheac-coupledLON with50 Ω toGND.
Connecta baseband signaltopins21 = I,22 = I,10 = Q, and 9 = Q.
The differentialbaseband inputsshouldbe settotheproperlevel,3.3V fortheTRF370333 or1.5V forthe TRF370315.
RF_OUT, pin16,can be fedtoa spectrumanalyzersettothedesiredfrequency,LO ± baseband signal.This pinshouldalsobe ac-coupledthrougha 100-pFcapacitor.
AllNC pinscan be leftfloating. ESD Sensitivity RF devicesmay be extremelysensitivetoelectrostaticdischarge(ESD).To preventdamage fromESD, devices shouldbe storedand handledina way thatpreventsthebuild-upofelectrostaticvoltagesthatexceed therated level.Rated ESD levelsshouldalsonot be exceeded whilethe deviceisinstalledon a printedcircuitboard (PCB).FollowtheseguidelinesforoptimalESD protection:
Low ESD performanceisnot uncommon inRF ICs;see the AbsoluteMaximum Ratingstable.Therefore, customers’ ESD precautionsshouldbe consistentwiththeseratings.
The deviceshouldbe robustonce assembled ontothePCB unless externalinputs(connectors,etc.)directly connectthedevicepinstooff-boardcircuits. Copyright© 2006–2011,Texas InstrumentsIncorporated 15

100□pF 100□pF SMA_END NC1 GND2 LOP3 LON4 GND5 NC6 NC GND QN QP GND GND NC 13 GND 14 NC 15 RF_OUT 16 GND 17 VccMOD 18GND GND IP IN GND VccLO 24LOP SMA_END LON 2345 SMA_END IN 2 3 4 5 SMA_END IP 1000□pF 2 3 4 5 SMA_END 100□pF 1000□pF 2345 SMA_END QN 2 3 4 5 SMA_END QP RF_OUT 2POS_JUMPER 2POS_JUMPER C8 C9 4.7uF S0214-01 0.1 F (Note□1) /c109 0.1 F (Note□1) /c109

4.7 F/c109

SLWS184J –MARCH 2006–REVISED MAY 2011 www.ti.com (1) Do notinstall. Figure26. TRF3703 EVM Schematic

+5□V BBIPBBIN LOP LON +5□VGND GND 50 /c87 RF_OUT K001 TRF370315 TRF370333 www.ti.com SLWS184J –MARCH 2006–REVISED MAY 2011 Figure27 shows thetopviewoftheTRF3703 EVM board. Figure27. TRF3703 EVM Board Layout Table1.BillofMaterialsforTRF3703 EVM Value Footprint QTY PartNumber Vendor Digi-KeyNumber REF DES Not Installed Tantalum 3216 2 T491A475K010AS KEMET 399-1561-1-ND C6, C7 4.7-μF,10-V, 10% capacitor 1000-pF,50-V, 603 2 ECJ-1VC1H102J Panasonic PCC2151CT-ND C4, C5 5% capacitor 100-pF,50-V, 603 3 ECJ-1VC1H101J Panasonic PCC101ACVCT-ND C1, C2, C3 5% capacitor Capacitor 603 0 C8, C9 0-Ω resistor, 603 5 ERJ-3GEY0R00V Panasonic P0.0GCT-ND R1, R2, R3, 1/10-W,5% R4, R5 Copyright© 2006–2011,Texas InstrumentsIncorporated 17

RF_OUT VCXO Ref□Osc CLK2 CDCM7005 Clock□Gen TRF3761 PLL LO□Generator TRF3703 I/Q Modulator B0176-01 TRF370315 TRF370333 SLWS184J –MARCH 2006–REVISED MAY 2011 www.ti.com Table1.BillofMaterialsforTRF3703 EVM (continued) Value Footprint QTY PartNumber Vendor Digi-KeyNumber REF DES Not Installed TRF3703 24-QFN-PP- 1 TI U1 4X4MM SMA connectors SMA_END_ 6 16F3627 Newark 142-0711-821 J1,J2,J3, SMALL J4,J5,J6, 2POS_HEADER 2POS_JUMP 2 HTSW-150-07-L-S SAMTEC N/A W1, W2 GSM Applications The TRF370315 and TRF370333 are suitedforGSM applicationsbecause ofthehighlinearityand low noise levelovertheentirerecommended operatingrange.These devicesalsohave excellentEVM performance,which makes them idealforthestringentGSM/EDGE applications. WCDMA Applications The TRF370315 and TRF370333 are alsooptimizedforWCDMA applicationswhere both adjacent-channel power ratio(ACPR) and noisedensityare criticallyimportant.Using Texas instruments’ DAC568X seriesof high-performancedigital-to-analogconvertersas depictedinFigure28, excellentACPR levelswere measured withone-,two-,and four-WCDMA carriers.See ElectricalCharacteristics, fLO = 2140 MHz forexactACPR values. Figure28. TypicalTransmitSetup Block Diagram

f − Frequency Offset − kHz (Relative to Carrier) −80 −70 −60 −50 −40 −30 −20 −10 −200 −150 −100 −50 0 50 100 150 200 P − Power − dBm G024 3RD LSB (dBc) 3RD LSB 2ND LSB LSB (Undesired) POUT SBS (dBc) Carrier USB (Desired) 2ND USB (dBc) 2ND USB 3RD USB C (dBm) TRF370315 TRF370333 www.ti.com SLWS184J –MARCH 2006–REVISED MAY 2011 DEFINITION OF SPECIFICATIONS Unadjusted CarrierFeedthrough This specificationmeasures the amount by which the localoscillatorcomponent isattenuatedin the output spectrumofthemodulatorrelativetothecarrier.Thisfurtherassumes thatthebaseband inputsdeliveredtothe pinsoftheTRF370315 and TRF370333 areperfectlymatched tohave thesame dc offset(VCM). Thisincludes allfourbaseband inputs:I,I,Q, and Q. Thisismeasured indBm. Adjusted(Optimized)CarrierFeedthrough Thisdiffersfromtheunadjustedsuppressionnumber inthatthebaseband inputdc offsetsareiterativelyadjusted around theirtheoreticalvalueof VCM to yieldthe maximum suppressionof the LO component inthe output spectrum.Thisismeasured indBm. Unadjusted Sideband Suppression Thisspecificationmeasures theamount by whichtheunwanted sidebandoftheinputsignalisattenuatedinthe outputof the modulator,relativeto the wanted sideband.This furtherassumes thatthe baseband inputs deliveredtothemodulatorinputpinsareperfectlymatched inamplitudeand areexactly90° outofphase.Thisis measured indBc. Adjusted(Optimized)Sideband Suppression Thisdiffersfromtheunadjustedsidebandsuppressioninthatthebaseband inputsareiterativelyadjustedaround theirtheoreticalvaluestomaximizetheamount ofsidebandsuppression.Thisismeasured indBc. Suppressions Overtemperature This specificationassumes thatthe user has gone though the optimizationprocess forthe suppressionin question,and settheoptimalsettingsfortheI,Q inputs.Thisspecificationthenmeasures thesuppressionwhen temperatureconditionschange aftertheinitialcalibrationisdone. Figure29 shows a simulatedoutputand illustratestherespectivedefinitionsofvarioustermsused inthisdata sheet.The graphassumes a baseband inputof50 kHz. Figure29. GraphicalIllustrationofCommon Terms Copyright© 2006–2011,Texas InstrumentsIncorporated 19

SLWS184J –MARCH 2006–REVISED MAY 2011 www.ti.com

REVISION HISTORY

NOTE: Page numbers forpreviousrevisionsmay differfrompage numbers inthecurrentversion. Changes from RevisionI(July,2010)toRevisionJ Page Changes from RevisionH (January,2010)toRevisionI Page

www.ti.com 10-Jun-2014 Addendum-Page 1 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish (6) MSL Peak Temp (3) Op Temp (°C) Device Marking (4/5) Samples TRF370315IRGER ACTIVE VQFN RGE 24 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 85 TRF37 0315 TRF370315IRGET ACTIVE VQFN RGE 24 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 85 TRF37 0315 TRF370333IRGER ACTIVE VQFN RGE 24 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 85 TRF37 0333 TRF370333IRGET ACTIVE VQFN RGE 24 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 85 TRF37 0333 TRF370333IRGETG4 ACTIVE VQFN RGE 24 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 85 TRF37 0333 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device.

www.ti.com 10-Jun-2014 Addendum-Page 2 (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

*All dimensions are nominal Device Package Type Package Drawing Pins SPQ Reel Diameter (mm) Reel Width W1 (mm) (mm) (mm) (mm) (mm) W (mm) Pin1 Quadrant PACKAGE MATERIALS INFORMATION www.ti.com 24-Apr-2013 Pack Materials-Page 1

*All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) TRF370315IRGER VQFN RGE 24 3000 338.1 338.1 20.6 TRF370315IRGET VQFN RGE 24 250 210.0 185.0 35.0 TRF370333IRGER VQFN RGE 24 3000 338.1 338.1 20.6 TRF370333IRGET VQFN RGE 24 250 210.0 185.0 35.0 PACKAGE MATERIALS INFORMATION www.ti.com 24-Apr-2013 Pack Materials-Page 2

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Summary

0.35-GHz TO 4-GHz QUADRATURE MODULATORS

Description