TRF3702

TRF3702_07 TI | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 35

Technical content

www.ti.com

FEATURES

APPLICATIONS

(TOP VIEW) P0003-01

DESCRIPTION

1.5-GHz to 2.5-GHz QUADRATURE MODULATOR 71-dBc Single-Carrier WCDMA ACPR at 14-dBm Channel Power P1dB of dBm Typical Unadjusted Carrier Suppression dBc at GHz Typical Unadjusted Sideband Suppression dBc at GHz Very Low Noise Floor Differential or Single-Ended Q Inputs Convenient Single-Ended LO Input Silicon Germanium Technology Cellular Base Transceiver Station Transmit Channel IF Sampling TDMA: GSM, IS-136, EDGE/UWC-136 CDMA: IS-95, UMTS, CDMA2000 Wireless Local Loop Wireless LAN IEEE 802.11 LMDS, MMDS Wideband Transceivers The TRF3702 is an ultralow-noise direct quadrature modulator that is capable of converting complex input signals from baseband or IF directly up to RF. An internal analog combiner sums the real and imaginary components of the RF outputs. This combined output can feed the RF preamp at frequencies of up to 2.5 GHz. The modulator is implemented as a double-balanced mixer. An internal local oscillator (LO) phase splitter accommodates a single-ended LO input, eliminating the need for a costly external balun. Please be aware that an important notice concerning availability, standard warranty, and use in critical sheet. PRODUCTION DATA information is current as of publication date. Copyright 2004 2006, Texas Instruments Incorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

www.ti.com +45° ±45° S RFOUT IVIN IREF QVIN QREF LO 50 W VCC PWD GND B0002-01 TRF3702 SLWS149A SEPTEMBER 2004 REVISED AUGUST 2006 This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. AVAILABLE OPTIONS T A 4-mm 4-mm 16-Pin RHC (QFN) Package (1) TRF3702IRHC C to C TRF3702IRHCR (Tape and reel) (1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI website at www.ti.com FUNCTIONAL BLOCK DIAGRAM Submit Documentation Feedback

www.ti.com 1 16 15 14 13 5 6 7 8 9 GND GND VCC GND GND LO GND QREF IREF RFOUT GND IVIN QVIN GND VCC PWD RHC P ACKAGE (TOP VIEW) P0003-01 ABSOLUTE MAXIMUM RATINGS TRF3702 SLWS149A SEPTEMBER 2004 REVISED AUGUST 2006 TERMINAL FUNCTIONS TERMINAL I/O NO. GND 11, Ground IREF I In-phase (I) reference voltage/differential input IVIN I In-phase (I) signal input LO I Local oscillator input PWD I Power down QREF I Quadrature (Q) reference voltage/differential input QVIN I Quadrature (Q) signal input RFOUT O RF output VCC Supply voltage over operating free-air temperature range (unless otherwise noted) (1) (2) V CC Supply voltage range 0.5 V to V LO input power level dBm Baseband input voltage level (single-ended) Vp-p T A Operating free-air temperature range C to C Lead temperature for seconds 260 C (1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) Measured with respect to ground Submit Documentation Feedback

www.ti.com RECOMMENDED OPERATING CONDITIONS ELECTRICAL CHARACTERISTICS TRF3702 SLWS149A SEPTEMBER 2004 REVISED AUGUST 2006 MIN NOM MAX UNIT Supplies and References V CC Analog supply voltage 4.5 5.5 V VCM (IVIN, QVIN, IREF, QREF input common-mode voltage) 3.7 V Local Oscillator (LO) Input Input frequency 1500 2500 MHz Power level (measured into Ω dBm Signal Inputs (IVIN, QVIN) Input bandwidth 700 MHz Over recommended operating conditions, VCC VCM 3.7 f LO 2140 MHz at dBm, T A C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Power Supply V(PWD) V 145 170 I CC Total supply current mA V(PWD) V Turnon time 120 ns Turnoff time ns Power-down input impedance k Ω Local Oscillator (LO) Input Input impedance (1) Ω Signal Inputs (IVIN, QVIN, IREF, QREF) Input bias current Q VCM 3.7 V (all inputs tied to VCM) µ A Single-ended input 260 Input impedance k Ω Differential input 130 (1) For a listing of impedances at various frequencies, see Table Table RFOUT and LO Pin Impedance Frequency (MHz) Z (RFOUT Pin) Z (LO Pin) 1500 j 4.7 31.7 j 8.8 1600 30.9 j 0.3 29.3 j 6.2 1700 29.3 j 3.1 27.3 j 3.1 1800 27.9 j 7.2 26.5 j 0.17 1900 27.6 j 26.1+ j 2.7 2000 29.4 19.8 26.5 j 5.4 2100 34.6 j 27.2 j 7.6 2200 44.2 j j 9.5 2300 j 33.6 j 10.6 2400 j 29.5 j 2500 j 5.8 29.8 j 12.2 Submit Documentation Feedback

www.ti.com RF OUTPUT PERFORMANCE RF OUTPUT PERFORMANCE TRF3702 SLWS149A SEPTEMBER 2004 REVISED AUGUST 2006 Over recommended operating conditions, VCC VCM 3.7 f LO 1842 MHz at dBm (unless otherwise specified) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Single and Two-Tone Specifications Output power 2.5 dBm Second baseband harmonic dBc (USB or LSB) (2) Q (1) Vp-p, f BB 928 kHz Third baseband harmonic dBc (USB or LSB) (2) Q (1) Vp-p (two-tone signal, f BB1 928 kHz, IMD dBc f BB2 992 kHz) P1dB (output compression dBm point) Q VCM 3.7 VDC (all inputs tied to VCM), 6-MHz offset 155 from carrier NSD Noise spectral density dBm/Hz 6-MHz offset from carrier, P out dBm, over temperature 148.5 146.5 (3) RFOUT pin impedance (4) Ω Q (1) Vp-p, f BB 928 kHz, unadjusted Carrier suppression Q (1) Vp-p, f BB 928 kHz, optimized dBc Q (1) Vp-p, f BB 928 kHz, over temperature (5) Q (1) Vp-p, f BB 928 kHz, unadjusted Sideband suppression Q (1) Vp-p, f BB 928 kHz, optimized dBc Q (1) Vp-p, f BB 928 kHz, over temperature (5) (1) I Q Vp-p implies that the magnitude of the signal at each input pin IVIN, IREF, QVIN, QREF is equal to 500 mVp-p. (2) USB upper sideband. LSB lower sideband. (3) Maximum noise values are assured by statistical characterization only, not production testing. The values specified are over the entire temperature range, T A C to (4) For a listing of impedances at various frequencies, see Table (5) After optimization at room temperature. See the Definitions of Selected Specifications section. Over recommended operating conditions, VCC VCM 3.7 f LO 1960 MHz at dBm (unless otherwise specified) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Single and Two-Tone Specifications Output power dBm Second baseband harmonic dBc (USB or LSB) (2) Q (1) Vp-p, f BB 928 kHz Third baseband harmonic dBc (USB or LSB) (2) Q (1) Vp-p (two-tone signal, f BB1 928 kHz, IMD dBc f BB2 992 kHz) P1dB (output compression dBm point) NSD Noise spectral density 6-MHz offset from carrier, P out dBm, over temperature 148 146.5 (3) dBm/Hz RFOUT pin impedance (4) j15 Ω Q (1) Vp-p, f BB 928 kHz, unadjusted Carrier suppression dBc Q (1) Vp-p, f BB 928 kHz, optimized Q (1) Vp-p, f BB 928 kHz, unadjusted Sideband suppression dBc Q (1) Vp-p, f BB 928 kHz, optimized (1) I Q Vp-p implies that the magnitude of the signal at each input pin IVIN, IREF, QVIN, QREF is equal to 500 mVp-p. (2) USB upper sideband. LSB lower sideband. (3) Maximum noise values are assured by statistical characterization only, not production testing. The values specified are over the entire temperature range, T A C to (4) For a listing of impedances at various frequencies, see Table Submit Documentation Feedback

www.ti.com RF OUTPUT PERFORMANCE THERMAL CHARACTERISTICS DEFINITIONS OF SELECTED SPECIFICATIONS Unadjusted Carrier Suppression Adjusted (Optimized) Carrier Suppression TRF3702 SLWS149A SEPTEMBER 2004 REVISED AUGUST 2006 Over recommended operating conditions, VCC VCM 3.7 f LO 2.1 GHz at dBm (unless otherwise specified) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Single and Two-Tone Specifications Output power dBm Second baseband harmonic dBc (USB or LSB) (2) Q (1) Vp-p, f BB 928 kHz Third baseband harmonic dBc (USB or LSB) (2) Q (1) Vp-p, fBB 928 kHz (two-tone signal, IMD dBc f BB1 928 kHz, f BB2 992 kHz) P1dB (output compression dBm point) NSD Noise spectral density 60-MHz offset from carrier, P out dBm, over temperature 151 148.5 (3) dBm/Hz WCDMA ACPR Single carrier, channel power dBm dBc RFOUT pin impedance (4) j27 Ω Q (1) Vp-p, f BB 928 kHz, unadjusted Carrier suppression Q (1) Vp-p, f BB 928 kHz, optimized dBc Q (1) Vp-p, f BB 928 kHz, over temperature (5) Q (1) Vp-p, f BB 928 kHz, unadjusted Sideband suppression Q (1) Vp-p, f BB 928 kHz, optimized dBc Q (1) Vp-p, f BB 928 kHz, over temperature (5) (1) I Q Vp-p implies that the magnitude of the signal at each input pin IVIN, IREF, QVIN, QREF is equal to 500 mVp-p. (2) USB upper sideband. LSB lower sideband. (3) Maximum noise values are assured by statistical characterization only, not production testing. The values specified are over the entire temperature range, T A C to (4) For a listing of impedances at various frequencies, see Table (5) After optimization at room temperature. See the Definitions of Selected Specifications section. PARAMETER CONDITION NOM UNIT R θ JA Thermal resistace, junction to ambient Soldered pad using four-layer JEDEC board with four thermal vias 42.8 C/W R θ JM Thermal resistace, junction to mounting 24.8 C/W surface R θ JC Thermal resistace, junction to case Soldered pad using two-layer JEDEC board with four thermal vias 67.6 C/W This specification measures the amount by which the local oscillator component is attenuated in the output spectrum of the modulator relative to the carrier. It is assumed that the baseband inputs delivered to the pins of the TRF3702 are perfectly matched to have the same dc offset (VCM). This includes all four baseband inputs: IVIN, QVIN, IREF and QREF. Unadjusted carrier suppression is measured in dBc. This differs from the unadjusted suppression number in that the dc offsets of the baseband inputs are iteratively adjusted around their theoretical value of VCM to yield the maximum suppression of the LO component in the output spectrum. Adjusted carrier suppression is measured in dBc. Submit Documentation Feedback

www.ti.com Unadjusted Sideband Suppression Adjusted (Optimized) Sideband Suppression Suppressions Over Temperature f − Frequency Offset − kHz (Relative to Carrier) −80 −70 −60 −50 −40 −30 −20 −10 −200 −150 −100 −50 0 50 100 150 200 P − Power − dBm G007 3RD LSB (dBc) 3RD LSB 2ND LSB LSB (Undesired) POUT SBS (dBc) Carrier USB (Desired) 2ND USB (dBc) 2ND USB 3RD USB CS (dBc) TYPICAL CHARACTERISTICS TRF3702 SLWS149A SEPTEMBER 2004 REVISED AUGUST 2006 DEFINITIONS OF SELECTED SPECIFICATIONS (continued) This specification measures the amount by which the unwanted sideband of the input signal is attenuated in the output of the modulator, relative to the wanted sideband. It is assumed that the baseband inputs delivered to the modulator input pins are perfectly matched in amplitude and are exactly out of phase. Unadjusted sideband suppression is measured in dBc. This differs from the unadjusted sideband suppression in that the baseband inputs are iteratively adjusted around their theoretical values to maximize the amount of sideband suppression. Adjusted sideband suppression is measured in dBc. This specification assumes that the user has gone through the optimization process for the suppression in question, and set the optimal settings for the Q inputs at T A This specification then measures the suppression when temperature conditions change after the initial calibration is done. Figure shows a simulated output and illustrates the respective definitions of various terms used in this data sheet. The graph assumes a baseband input of kHz. Figure Graphical Illustration of Common Terms For all the performance plots in this section, the following conditions were used, unless otherwise noted: VCC VCM 3.7 P LO dBm, I and Q inputs driven differentially at a frequency of kHz. In the case of optimized suppressions, the point of optimization is noted and is always at nominal conditions and room temperature. A level of >50 dBc is assumed to be optimized. Submit Documentation Feedback

www.ti.com I, Q Amplitude − VPP −25 −20 −15 −10 0 1 2 3 4 POUT − Output Power − dBm G001 –40°C 85°C 25°C fLO = 1842 MHz −25 −20 −15 −10 0 1 2 3 4 POUT − Output Power − dBm G002 –40°C 85°C 25°C fLO = 1960 MHz I, Q Amplitude − VPP −25 −20 −15 −10 0 1 2 3 4 POUT − Output Power − dBm G003 –40°C 85°C 25°C fLO = 2.1 GHz I, Q Amplitude − VPP fLO − Frequency − MHz 1400 1600 1800 2000 2200 2400 2600 CS − Unadjusted Carrier Suppression − dBc G020 25°C 85°C –40°C TRF3702 SLWS149A SEPTEMBER 2004 REVISED AUGUST 2006 TYPICAL CHARACTERISTICS (continued) OUTPUT POWER OUTPUT POWER vs vs Q AMPLITUDE Q AMPLITUDE Figure Figure OUTPUT POWER UNADJUSTED CARRIER SUPPRESSION vs vs Q AMPLITUDE FREQUENCY Figure Figure Submit Documentation Feedback

www.ti.com fLO − Frequency − MHz 1400 1600 1800 2000 2200 2400 2600 SS − Unadjusted Sideband Suppression − dBc G021 –40°C 85°C 25°C POUT − Output Power − dBm −25 −20 −15 −10 −5 0 5 10 fLO = 1960 MHz CS − Unadjusted Carrier Suppression − dBc G008 –40°C 25°C 85°C POUT − Output Power − dBm −25 −20 −15 −10 −5 0 5 10 fLO = 1960 MHz SS − Unadjusted Sideband Suppression − dBc G011 –40°C 25°C 85°C 1880 1900 1920 1940 1960 1980 2000 2020 fLO − Frequency − MHz POUT = 0 dBm Optimized at 1960 MHz CS − Carrier Suppression − dBc G025 25°C Optimization Point –40°C 85°C TRF3702 SLWS149A SEPTEMBER 2004 REVISED AUGUST 2006 TYPICAL CHARACTERISTICS (continued) UNADJUSTED SIDEBAND SUPPRESSION UNADJUSTED CARRIER SUPPRESSION vs vs FREQUENCY OUTPUT POWER Figure Figure UNADJUSTED SIDEBAND SUPPRESSION CARRIER SUPPRESSION vs vs OUTPUT POWER FREQUENCY Figure Figure Submit Documentation Feedback

www.ti.com 25°C VCC − Supply Voltage − V POUT = 0 dBm fLO = 1960 MHz Optimized at 5 V CS − Carrier Suppression − dBc G034 –40°C Optimization Point 85°C 3.0 3.5 4.0 4.5 VCM − V POUT = 0 dBm fLO = 1960 MHz Optimized at 3.7 V CS − Carrier Suppression − dBc G028 25°C –40°C 85°C Optimization Point −12 −9 −6 −3 0 3 6 9 12 POUT = 0 dBm fLO = 1960 MHz Optimized at 0 dBm CS − Carrier Suppression − dBc G039 25°C –40°C Optimization Point PLO − Local Oscillator Input Power − dBm 85°C 1880 1900 1920 1940 1960 1980 2000 2020 –40°C fLO − Frequency − MHz POUT = 0 dBm Optimized at 1960 MHz SS − Sideband Suppression − dBc G026 25°C 85°C Optimization Point TRF3702 SLWS149A SEPTEMBER 2004 REVISED AUGUST 2006 TYPICAL CHARACTERISTICS (continued) CARRIER SUPPRESSION CARRIER SUPPRESSION vs vs VCM SUPPLY VOLTAGE Figure 10. Figure 11. CARRIER SUPPRESSION SIDEBAND SUPPRESSION vs vs LOCAL OSCILLATOR INPUT POWER FREQUENCY Figure 12. Figure 13. Submit Documentation Feedback

www.ti.com VCC − Supply Voltage − V POUT = 0 dBm fLO = 1960 MHz Optimized at 5 V SS − Sideband Suppression − dBc G035 25°C –40°C 85°C Optimization Point 3.0 3.5 4.0 4.5 VCM − V POUT = 0 dBm fLO = 1960 MHz Optimized at 3.7 V SS − Sideband Suppression − dBc G029 –40°C 85°C Optimization Point 25°C −12 −9 −6 −3 0 3 6 9 12 POUT = 0 dBm fLO = 1960 MHz Optimized at 0 dBm SS − Sideband Suppression − dBc G040 85°C 25°C PLO − Local Oscillator Input Power − dBm Optimization Point –40°C fLO − Frequency − MHz 1780 1800 1820 1840 1860 1880 1900 1920 1940 CS − Carrier Suppression − dBc G017 Optimization Point POUT = 0 dBm TA = 25°C fLO = 1842 MHz Optimized at 1842 MHz TRF3702 SLWS149A SEPTEMBER 2004 REVISED AUGUST 2006 TYPICAL CHARACTERISTICS (continued) SIDEBAND SUPPRESSION SIDEBAND SUPPRESSION vs vs VCM SUPPLY VOLTAGE Figure 14. Figure 15. SIDEBAND SUPPRESSION CARRIER SUPPRESSION vs vs LOCAL OSCILLATOR INPUT POWER FREQUENCY Figure 16. Figure 17. Submit Documentation Feedback

www.ti.com 3.0 3.5 4.0 4.5 VCM − V CS − Carrier Suppression − dBc G043 Optimization Point POUT = 0 dBm TA = 25°C fLO = 1842 MHz Optimized at 3.7 V VCC − Supply Voltage − V CS − Carrier Suppression − dBc G044 Optimization Point POUT = 0 dBm TA = 25°C fLO = 1842 MHz Optimized at 5 V −12 −9 −6 −3 0 3 6 9 12 POUT = 0 dBm TA = 25°C fLO = 1842 MHz Optimized at 0 dBm CS − Carrier Suppression − dBc G018 Optimization Point PLO − Local Oscillator Input Power − dBm 1780 1800 1820 1840 1860 1880 1900 1920 fLO − Frequency − MHz SS − Sideband Suppression − dBc G045 POUT = 0 dBm TA = 25°C fLO = 1842 MHz Optimized at 1842 MHz Optimization Point TRF3702 SLWS149A SEPTEMBER 2004 REVISED AUGUST 2006 TYPICAL CHARACTERISTICS (continued) CARRIER SUPPRESSION CARRIER SUPPRESSION vs vs VCM SUPPLY VOLTAGE Figure 18. Figure 19. CARRIER SUPPRESSION SIDEBAND SUPPRESSION vs vs LOCAL OSCILLATOR INPUT POWER FREQUENCY Figure 20. Figure 21. Submit Documentation Feedback

www.ti.com 3.0 3.5 4.0 4.5 VCM − V SS − Sideband Suppression − dBc G050 Optimization Point POUT = 0 dBm TA = 25°C fLO = 1842 MHz Optimized at 3.7 V VCC − Supply Voltage − V SS − Sideband Suppression − dBc G051 Optimization Point POUT = 0 dBm TA = 25°C fLO = 1842 MHz Optimized at 5 V −12 −9 −6 −3 0 3 6 9 12 SS − Sideband Suppression − dBc G049 PLO − Local Oscillator Input Power − dBm Optimization Point POUT = 0 dBm TA = 25°C fLO = 1842 MHz Optimized at 0 dBm fLO − Frequency − MHz 2040 2060 2080 2100 2120 2140 2160 2180 CS − Carrier Suppression − dBc G054 Optimization Point POUT = 0 dBm TA = 25°C fLO = 2.1 GHz Optimized at 2.1 GHz TRF3702 SLWS149A SEPTEMBER 2004 REVISED AUGUST 2006 TYPICAL CHARACTERISTICS (continued) SIDEBAND SUPPRESSION SIDEBAND SUPPRESSION vs vs VCM SUPPLY VOLTAGE Figure 22. Figure 23. SIDEBAND SUPPRESSION CARRIER SUPPRESSION vs vs LOCAL OSCILLATOR INPUT POWER FREQUENCY Figure 24. Figure 25. Submit Documentation Feedback

www.ti.com 3.0 3.5 4.0 4.5 VCM − V CS − Carrier Suppression − dBc G056 POUT = 0 dBm TA = 25°C fLO = 2.1 GHz Optimized at 3.7 V Optimization Point VCC − Supply Voltage − V CS − Carrier Suppression − dBc G057 Optimization Point POUT = 0 dBm TA = 25°C fLO = 2.1 GHz Optimized at 5 V −12 −9 −6 −3 0 3 6 9 12 POUT = 0 dBm TA = 25°C fLO = 2.1 GHz Optimized at 0 dBm CS − Carrier Suppression − dBc G055 Optimization Point PLO − Local Oscillator Input Power − dBm fLO − Frequency − MHz 2040 2060 2080 2100 2120 2140 2160 2180 SS − Sideband Suppression − dBc G058 Optimization Point POUT = 0 dBm TA = 25°C fLO = 2.1 GHz Optimized at 1842 MHz TRF3702 SLWS149A SEPTEMBER 2004 REVISED AUGUST 2006 TYPICAL CHARACTERISTICS (continued) CARRIER SUPPRESSION CARRIER SUPPRESSION vs vs VCM SUPPLY VOLTAGE Figure 26. Figure 27. CARRIER SUPPRESSION SIDEBAND SUPPRESSION vs vs LOCAL OSCILLATOR INPUT POWER FREQUENCY Figure 28. Figure 29. Submit Documentation Feedback

www.ti.com 3.0 3.5 4.0 4.5 VCM − V SS − Sideband Suppression − dBc G060 Optimization Point POUT = 0 dBm TA = 25°C fLO = 2.1 GHz Optimized at 3.7 V VCC − Supply Voltage − V SS − Sideband Suppression − dBc G061 Optimization Point POUT = 0 dBm TA = 25°C fLO = 2.1 GHz Optimized at 5 V −12 −9 −6 −3 0 3 6 9 12 POUT = 0 dBm TA = 25°C fLO = 2.1 GHz Optimized at 0 dBm SS − Sideband Suppression − dBc G059 Optimization Point PLO − Local Oscillator Input Power − dBm fLO − Frequency − MHz 1400 1600 1800 2000 2200 2400 2600 P1dB − dBm G019 85°C –40°C 25°C TRF3702 SLWS149A SEPTEMBER 2004 REVISED AUGUST 2006 TYPICAL CHARACTERISTICS (continued) SIDEBAND SUPPRESSION SIDEBAND SUPPRESSION vs vs VCM SUPPLY VOLTAGE Figure 30. Figure 31. SIDEBAND SUPPRESSION P1dB vs vs LOCAL OSCILLATOR INPUT POWER FREQUENCY Figure 32. Figure 33. Submit Documentation Feedback

www.ti.com fLO − Frequency − MHz 1700 1800 1900 2000 2100 2200 2300 POUT − Output Power Flatness − dBm G022 –40°C 25°C 85°C VCM − V fLO = 1960 MHz POUT − Output Power Flatness− dBm G027 –40°C 25°C 85°C PLO − Local Oscillator Input Power − dBm −12 −9 −6 −3 0 3 6 9 12 fLO = 1960 MHz POUT − Output Power Flatness − dBm G038 –40°C 25°C 85°C VCC − Supply Voltage − V fLO = 1842 MHz POUT − Output Power − dBm G009 25°C –40°C 85°C TRF3702 SLWS149A SEPTEMBER 2004 REVISED AUGUST 2006 TYPICAL CHARACTERISTICS (continued) OUTPUT POWER FLATNESS OUTPUT POWER FLATNESS vs vs FREQUENCY OUT dBm NOMINAL) VCM OUT dBm NOMINAL) Figure 34. Figure 35. OUTPUT POWER FLATNESS OUTPUT POWER FLATNESS vs vs LO INPUT POWER OUT dBm NOMINAL) SUPPLY VOLTAGE OUT dBm NOMINAL) Figure 36. Figure 37. Submit Documentation Feedback

www.ti.com VCC − Supply Voltage − V fLO = 1960 MHz POUT − Output Power − dBm G033 85°C –40°C 25°C VCC − Supply Voltage − V fLO = 2.1 GHz POUT − Output Power − dBm G053 85°C –40°C 25°C fLO − Frequency − MHz −65 −60 −55 −50 −45 −40 −35 −30 1750 1850 1950 2050 2150 2250 POUT = 0 dBm 2nd USB − dBc G023 –40°C 85°C 25°C POUT − Output Power Per Tone − dBm −15 −10 −5 0 fLO = 1.8 GHz IMD3 − dBc G016 85°C –40°C 25°C TRF3702 SLWS149A SEPTEMBER 2004 REVISED AUGUST 2006 TYPICAL CHARACTERISTICS (continued) OUTPUT POWER FLATNESS OUTPUT POWER FLATNESS vs vs SUPPLY VOLTAGE OUT dBm NOMINAL) SUPPLY VOLTAGE OUT dBm NOMINAL) Figure 38. Figure 39. IMD3 ND USB vs vs OUTPUT POWER PER TONE FREQUENCY Figure 40. Figure 41. Submit Documentation Feedback

www.ti.com −80 −70 −60 −50 −40 −30 0 1 2 3 4 fLO = 1842 MHz 2nd USB − dBc G004 –40°C 85°C 25°C I, Q Amplitude − VPP −80 −70 −60 −50 −40 −30 −20 −10 0 1 2 3 4 fLO = 1960 MHz 2nd USB − dBc G005 85°C 25°C I, Q Amplitude − VPP –40°C −80 −70 −60 −50 −40 −30 0 1 2 3 4 fLO = 2.1 GHz 2nd USB − dBc G006 –40°C 85°C 25°C I, Q Amplitude − VPP −65 −60 −55 −50 −45 −40 −35 −30 3.0 3.5 4.0 4.5 VCM − V POUT = 0 dBm fLO = 1960 MHz 2nd USB − dBc G030 25°C 85°C –40°C TRF3702 SLWS149A SEPTEMBER 2004 REVISED AUGUST 2006 TYPICAL CHARACTERISTICS (continued) ND USB ND USB vs vs Q AMPLITUDE Q AMPLITUDE Figure 42. Figure 43. ND USB ND USB vs vs Q Amplitude VCM Figure 44. Figure 45. Submit Documentation Feedback

www.ti.com −70 −65 −60 −55 −50 −45 −40 −35 −30 VCC − Supply Voltage − V POUT = 0 dBm fLO = 1960 MHz 2nd USB − dBc G036 25°C 85°C –40°C −65 −60 −55 −50 −45 −40 −35 −30 −12 −9 −6 −3 0 3 6 9 12 POUT = 0 dBm fLO = 1842 MHz 2nd USB − dBc G052 25°C –40°C PLO − Local Oscillator Input Power − dBm 85°C −65 −60 −55 −50 −45 −40 −35 −30 −12 −9 −6 −3 0 3 6 9 12 POUT = 0 dBm fLO = 2.1 GHz 2nd USB − dBc G062 25°C –40°C PLO − Local Oscillator Input Power − dBm 85°C −65 −60 −55 −50 −45 −40 −35 −30 −12 −9 −6 −3 0 3 6 9 12 POUT = 0 dBm fLO = 1960 MHz 2nd USB − dBc G041 85°C 25°C –40°C PLO − Local Oscillator Input Power − dBm TRF3702 SLWS149A SEPTEMBER 2004 REVISED AUGUST 2006 TYPICAL CHARACTERISTICS (continued) ND USB ND USB vs vs SUPPLY VOLTAGE LOCAL OSCILLATOR INPUT POWER Figure 46. Figure 47. ND USB ND USB vs vs LOCAL OSCILLATOR INPUT POWER LOCAL OSCILLATOR INPUT POWER Figure 48. Figure 49. Submit Documentation Feedback

www.ti.com fLO − Frequency − MHz −80 −75 −70 −65 −60 −55 −50 −45 −40 1700 1800 1900 2000 2100 2200 POUT = 0 dBm 3rd LSB − dBc G024 25°C –40°C 85°C I, Q Amplitude − VPP −90 −80 −70 −60 −50 −40 −30 −20 fLO = 1842 MHz 3rd LSB − dBc G013 –40°C 25°C 85°C I, Q Amplitude − VPP −90 −80 −70 −60 −50 −40 −30 −20 fLO = 1960 MHz 3rd LSB − dBc G014 –40°C 25°C 85°C I, Q Amplitude − VPP −90 −80 −70 −60 −50 −40 −30 −20 fLO = 2.1 GHz 3rd LSB − dBc G015 –40°C 25°C 85°C TRF3702 SLWS149A SEPTEMBER 2004 REVISED AUGUST 2006 TYPICAL CHARACTERISTICS (continued) RD LSB RD LSB vs vs FREQUENCY Q AMPLITUDE Figure 50. Figure 51. RD LSB RD LSB vs vs Q AMPLITUDE Q AMPLITUDE Figure 52. Figure 53. Submit Documentation Feedback

www.ti.com −70 −60 −50 −40 −30 −20 −10 3.0 3.5 4.0 4.5 VCM − V POUT = 0 dBm fLO = 1960 MHz 3rd LSB − dBc G031 25°C 85°C–40°C −80 −75 −70 −65 −60 −55 −50 −45 −40 VCC − Supply Voltage − V POUT = 0 dBm fLO = 1960 MHz 3rd LSB − dBc G037 25°C –40°C 85°C −80 −75 −70 −65 −60 −55 −50 −45 −40 −12 −9 −6 −3 0 3 6 9 12 POUT = 0 dBm fLO = 1960 MHz 3rd LSB − dBc G042 –40°C 25°C PLO − Local Oscillator Input Power − dBm 85°C 100 120 140 160 180 200 VCC − Supply Voltage − V POUT = 0 dBm fLO = 1960 MHz ICC − Supply Current − mA G032 85°C –40°C 25°C TRF3702 SLWS149A SEPTEMBER 2004 REVISED AUGUST 2006 TYPICAL CHARACTERISTICS (continued) RD LSB RD LSB vs vs VCM SUPPLY VOLTAGE Figure 54. Figure 55. RD LSB SUPPLY CURRENT vs vs LOCAL OSCILLATOR INPUT POWER SUPPLY VOLTAGE Figure 56. Figure 57. Submit Documentation Feedback

www.ti.com POUT − Output Power − dBm −156 −154 −152 −150 −148 −146 −144 −142 fLO = 1960 MHz Noise − dBm/Hz G046 25°C 85°C –40°C POUT − Output Power − dBm −156 −154 −152 −150 −148 −146 −144 −142 fLO = 2.1 GHz Noise − dBm/Hz G063 85°C –40°C 25°C Noise − dBm/Hz Percentage −150.0 −149.6 −149.8 −149.4 −149.2 −149.0 −148.8 −148.6 −148.4 −148.2 −148.0 −147.8 G065 POUT = 0 dBm fLO = 1842 MHz −147.6 −147.4 −147.2 Noise − dBm/Hz Percentage −148.4 −148.0 −148.2 −147.8 −147.6 −147.4 −147.2 −147.0 G064 POUT = 0 dBm fLO = 1960 MHz TRF3702 SLWS149A SEPTEMBER 2004 REVISED AUGUST 2006 TYPICAL CHARACTERISTICS (continued) NOISE AT 6-MHz OFFSET NOISE AT 60-MHz OFFSET vs vs OUTPUT POWER OUTPUT POWER Figure 58. Figure 59. NOISE DISTRIBUTION AT 6-MHz NOISE DISTRIBUTION AT 6-MHz OFFSET OVER TEMPERATURE OFFSET OVER TEMPERATURE Figure 60. Figure 61. Submit Documentation Feedback

www.ti.com Noise − dBm/Hz Percentage −151.8 −151.4 −151.6 −151.2 −151.0 −150.8 −150.6 −150.4 −150.2 −150.0 −149.8 −149.6 G066 POUT = 0 dBm fLO = 2.1 GHz −149.4 THEORY OF OPERATION TRF3702 SLWS149A SEPTEMBER 2004 REVISED AUGUST 2006 TYPICAL CHARACTERISTICS (continued) NOISE DISTRIBUTION AT 60-MHz OFFSET OVER TEMPERATURE Figure 62. The TRF3702 employs a double-balanced mixer architecture in implementing the direct Q upconversion. The Q inputs can be driven single-endedly or differentially, with comparable performance in both cases. The common mode level (VCM) of the four inputs (IVIN, IREF, QVIN, QREF) is typically set to 3.7 V and needs to be driven externally. These inputs go through a set of differential amplifiers and through a V-I converter to feed the double-balanced mixers. The ac-coupled LO input to the device goes through a phase splitter to provide the in-phase and quadrature signals that in turn drive the mixers. The outputs of the mixers are then summed, converted to single-ended signals, and amplified before they are fed to the output port RFOUT. The output of the TRF3702 is ac-coupled and can drive 50- Ω loads. Submit Documentation Feedback

www.ti.com EQUIVALENT CIRCUITS S0001-01 LO 50 Ω S0002-01 I, Q Baseband S0003-01 RFOUT Power Down 50 kΩ S0004-01 TRF3702 SLWS149A SEPTEMBER 2004 REVISED AUGUST 2006 Figure through Figure show equivalent schematics for the main inputs and outputs of the device. Figure 63. LO Equivalent Input Circuit Figure 64. IVIN, QVIN, IREF, QREF Equivalent Circuit Figure 65. RFOUT Equivalent Circuit Figure 66. Power-Down (PWD) Equivalent Circuit Submit Documentation Feedback

www.ti.com APPLICATION INFORMATION DRIVING THE Q INPUTS Implementing a Single-to-Differential Conversion for the Q inputs TRF3702 SLWS149A SEPTEMBER 2004 REVISED AUGUST 2006 There are several ways to drive the four baseband inputs of the TRF3702 to the required amplitude and dc offset. The optimal configuration depends on the end application requirements and the signal levels desired by the designer. The TRF3702 is by design a differential part, meaning that ideally the user should provide fully complementary signals. However, similar performance in every respect can be achieved if the user only has single-ended signals available. In this case, the IREF and QREF pins just need to have the VCM dc offset applied. In case differential Q signals are desired but not available, the THS4503 family of wideband, low-distortion, fully differential amplifiers can be used to provide a convenient way of performing this conversion. Even if differential signals are available, the THS4503 can provide gain in case a higher voltage swing is required. Besides featuring high bandwidth and high linearity, the THS4503 also provides a convenient way of applying the VCM to all four inputs to the modulator through the VOCM pin (pin 2). The user can further adjust the dc levels for optimum carrier suppression by injecting extra dc at the inputs to the operational amplifier, or by individually adding it to the four outputs. Figure shows a typical implementation of the THS4503 as a driver for the TRF3702. Gain can be easily incorporated in the loop by adjusting the feedback resistors appropriately. For more details, see the THS4503 data sheet at www.ti.com. Submit Documentation Feedback

www.ti.com S0005-02 Single-Ended I Input 374 Ω VCM 0.01 µF 0.1 µF VOCM VOUT− VOUT+ NC +VCC −VCC 402 Ω 392 Ω 0.01 µF 0.1 µF +8 VA 10 pF 22.1 Ω IREF IREF 22.1 Ω IVIN IVIN 0.1 µF 0.01 µF −8 VA 392 Ω 10 pF THS4503 TRF3702 SLWS149A SEPTEMBER 2004 REVISED AUGUST 2006 APPLICATION INFORMATION (continued) Figure 67. Using the THS4503 to Condition the Baseband Inputs to the TRF3702 Channel Shown) Submit Documentation Feedback

www.ti.com DRIVING THE LOCAL OSCILLATOR INPUT CE10 REFIN8 LE13 DATA12 CLK11 CPGND AGND DGND RFINB 5 MUXOUT 14 RFINA 6 RSET 1 CPOUT 2 VCP 16 DVDD 15 AVDD 7 TRF3750 1 nF CLK DATA LE 10 pF VCP 1 nF 10 nF 82 pF VVCO 100 pF 100 pF 100 pF AVDD 100 pF RSET LOCK DETECT VCO V TUNE GND GND OUT GND SUPPLY DECOUPLING NOT SHOWN To TRF3702 LO Input TCXO (10-MHz Reference) 10 /C0109F 0.1 /C0109F 20 k/C0087 3.9 k/C0087 4.7 k/C0087 16.5 /C0087 16.5 /C0087 16.5 /C0087 49.9 /C0087 10 pF 10 /C0109F 0.1 /C0109F 3 4 9 0.1 /C0109F10 /C0109F 10 pF DVDD 0.1 /C0109F10 /C0109F + 10 pF S0009-02 PCB LAYOUT CONSIDERATIONS TRF3702 SLWS149A SEPTEMBER 2004 REVISED AUGUST 2006 APPLICATION INFORMATION (continued) The LO pin is internally terminated to Ω thus enabling easy interface to the LO source without the need for external impedance matching. The power level of the LO signal should be in the range of dBm to dBm. For characterization purposes, a power level of dBm was chosen. An ideal way of driving the LO input of the TRF3702 is by using the TRF3750, an ultralow-phase-noise integer-N PLL from Texas Instruments. Combining the TRF3750 with an external VCO can complete the loop and provide a flexible, convenient, and cost-effective solution for the local oscillator of the transmitter. Figure shows a typical application for the LO driver network that incorporates the TRF3750 integer-N PLL synthesizer into the design. Depending on the VCO output and the amount of signal loss, an optional gain stage may be added to the output of the VCO before it is applied to the TRF3702 LO input. Figure 68. Typical Application Circuit for Generating the LO Signal for the TRF3702 Modulator The TRF3702 is a high-performance RF device; hence, care should be taken in the layout of the PCB in order to ensure optimum performance. Proper decoupling with low-ESR ceramic chip capacitors is needed for the VCC supplies (pins and 10). Typical values used are in the order of pF parallel to 0.1 µ with the lower-valued capacitors placed closer to the device pins. In addition, a larger tank capacitor in the order of µ F should be placed on the supply line as layout permits. At least a 4-layer board is recommended for the PCB. If possible, a solid ground plane and a ground pour is also recommended, as is a power plane for the supplies. Because the balance of the four Q inputs to the modulator can be critical to device performance, care should be taken to ensure that the trace runs for all four inputs are equal in length. In the case of single-ended drive of the Q inputs, the two unused pins IREF and QREF are fed with the VCM dc voltage only, and should be decoupled with a 0.1- µ F capacitor (or smaller). The LO input trace should be minimized in length and have controlled impedance of Ω No external matching components are needed because there is an internal 50- Ω termination. The RFOUT pin should also have a relatively small trace to minimize parasitics and coupling, and should also be controlled to Ω An impedance-matching network can be used to optimize power transfer, but is not critical. All the results shown in the data sheet were taken with no impedance matching network used (RFOUT directly driving an external 50- Ω load). The exposed thermal and ground pad on the bottom of the TRF3702 should be soldered to ground to ensure optimum electrical and thermal performance. The landing pattern on the PCB should include a solid pad and thermal vias. These vias typically have 1,2-mm pitch and 0,3-mm diameter. The vias can be arranged in a array. The thermal pad on the PCB should be at least 1,65 1,65 mm. A suggested layout is shown in Figure Submit Documentation Feedback

www.ti.com 0.8 mm 3.5 mm 3.2 mm 1.2 mm 1 mm x 0.432 mm (16 Places) M0002-01 Via 0.3 mm Drill (4 Places) Power Pad 1.65 mm x 1.65 mm IMPLEMENTING A DIRECT UPCONVERSION TRANSMITTER USING A TI DAC TRF3702 SLWS149A SEPTEMBER 2004 REVISED AUGUST 2006 APPLICATION INFORMATION (continued) Figure 69. Board Layout for the TRF3702 Device The TRF3702 is ideal for implementing a direct upconversion transmitter, where the input Q data can originate from an ASIC or a DAC. Texas Instruments' line of digital-to-analog converters (DAC) is ideally suited for interfacing to the TRF3702. Such DACs include, among others, the DAC290x series, DAC5672, and DAC5686. This section illustrates the use of the DAC5686, which offers a unique set of convenient. The DAC5686 is a 16-bit, 500 MSPS, interpolating dual-channel DAC, and it Q adjustments for optimal interface to the TRF3702. User-selectable, 11-bit offset and 12-bit gain adjustments can optimize the carrier and sideband suppression of the modulator, resulting in enhanced performance and relaxed filtering requirements at RF. The preferred mode of operation of the DAC5686 for direct interface with the TRF3702 at baseband is the dual-DAC mode. The user also has the flexibility of selecting any one of the four possible complex spectral bands to be fed into the TRF3702. For details on the available modes and programming, see the DAC5686 data sheet available at www.ti.com. Figure shows the DAC5686 in dual-DAC mode, which is best-suited for zero-IF interface to the TRF3702. In this mode, a seamless, passive interface between the DAC output and the input to the modulator is used, so that no extra components are needed between the two devices. The optimum dc offset level for the inputs to the TRF3702 (VCM) is approximately 3.7 The output of the DAC should be centered around 3.3 V or less (depending on signal swing), in order to ensure that its output compliance limits are not exceeded. The resistive network shown in Figure allows for this dc offset transition while still providing a dc path between the DAC output and the modulator. This ensures that the dc offset adjustments on the DAC5686 can still be applied to optimize the carrier suppression at the modulator output. The combination of the DAC5686 and the TRF3702 provides a unique signal-chain solution with state-of-the-art performance for wireless infrastructure applications. Submit Documentation Feedback

www.ti.com IOUTB1 IOUTB2 IOUTA1 IOUTA2 16-Bit DAC DA[15:0] DB[15:0] Fdata A Gain A Offset 16-Bit DAC B Offset B Gain DEMUX GND +5 V +5 VGND +45° –45° RFOUT IVIN IREF QVIN QREF LO 50 W VCC PWD GND S DAC5686 TRF3701 S0010-01 221/C0087221/C0087 49.9/C0087 49.9/C0087 15/C0087 15/C0087 15/C0087 15/C0087 221/C0087221/C0087 49.9/C0087 49.9/C0087 GSM (continued) Figure 70. DAC5686 in Dual-DAC Mode With Quadrature Modulator The TRF3702 is ideally suited for GSM applications, because it combines high linearity with low noise levels. Figure and Figure show the distribution of noise vs output power for the TRF3702 over the entire recommended temperature range. The level of noise attained in combination with the superior IMD3 performance shown in Figure means that the user can reach superior levels of C/N while maintaining high linearity. This combination offers the capability of delivering low levels of EVM, meeting the stringent requirements imposed by the GSM/EDGE standards. Figure shows the spectral mask compliance for the device versus channel power, for both 400-kHz and 600-kHz offsets. Submit Documentation Feedback

www.ti.com Channel Power − dBm fLO = 2 GHz GMSK Spectral Performance − dBc in 30 kHz G047 600-kHz Offset 400-kHz Offset WCDMA (continued) GMSK SPECTRAL PERFORMANCE vs CHANNEL POWER Figure 71. The TRF3702 is also optimized for WCDMA applications, where both adjacent-channel power ratio (ACPR) and noise density are critically important. Figure shows the noise performance of the modulator at a 60-MHz offset over temperature. In addition, Figure shows the 60-MHz offset noise measured at the output of the TRF3702 versus WCDMA channel power. Using Texas Instruments' DAC568x series of high-performance digital-to-analog converters in the configuration depicted in Figure state-of-the-art levels of ACPR have been measured. In each case, test model was used with active channels as the baseband input to the TRF3702. Figure shows the performance attained for a single WCDMA carrier at 2.14 GHz, with a measured ACPR of 71.2 dBc for a channel power of dBm. This unprecedented level of ACPR along with the low levels of noise at 60-MHz offset makes the TRF3702 an optimum choice for such applications. Figure shows the single-carrier WCDMA ACPR performance versus channel power; it is important to note that even at high output power levels, the TRF3702 maintains great linearity, offering dBc of ACPR at an output-channel power of dBm. Submit Documentation Feedback

www.ti.com Channel Power − dBm −153.6 −153.4 −153.2 −153.0 −152.8 −152.6 −152.4 −152.2 −152.0 −20 −15 −10 −5 0 Noise − dBm/Hz G068 f − Frequency − MHz −120 −100 −80 −60 −40 −20 2125 2130 2135 2140 2145 2150 2155 fLO = 2140 MHz Channel Power = −14 dBm ACPR = 71.2 dBc Power − dBm G067 Channel Power − dBm ACPR − dBc G068 TRF3702 SLWS149A SEPTEMBER 2004 REVISED AUGUST 2006 APPLICATION INFORMATION (continued) NOISE AT 60-MHz OFFSET vs WCDMA CHANNEL POWER SINGLE-CARRIER WCDMA PERFORMANCE Figure 72. Figure 73. SINGLE-CARRIER WCDMA ACPR vs CHANNEL POWER Figure 74. Submit Documentation Feedback

www.ti.com Channel Power (Per Carrier) − dBm ACPR − dBc G070 f − Frequency − MHz −120 −100 −80 −60 −40 −20 2110 2120 2130 2140 2150 2160 2170 fLO = 2140 MHz Total Carrier Power = −16.7 dBm ACPR = 62.8 dBc AL T ACPR = 63.7 dBc Power − dBm G069 TRF3702 SLWS149A SEPTEMBER 2004 REVISED AUGUST 2006 APPLICATION INFORMATION (continued) The TRF3702 can also be used for multicarrier applications, as is illustrated in Figure For a 4-carrier case at a total output power of 16.7 dBm, an ACPR of almost dBc can be reached. Figure shows the ACPR profile for a 4-carrier WCDMA application versus per-carrier channel power. Further improvements in performance can be achieved by including a low-pass filter between the output of the DAC and the input to the TRF3702, based on the frequency planning and specific requirements of a given design. The combination of the TRF3702, the DAC568x, and the TRF3750 provides a unique signal-chain chipset capable of delivering state-of-the-art levels of performance for the most challenging WCDMA applications. FOUR-CARRIER WCDMA ACPR vs FOUR-CARRIER WCDMA ACPR PERFORMANCE CHANNEL POWER (PER CARRIER) Figure 75. Figure 76. Submit Documentation Feedback

Orderable Device Status(1) Package Type Package Drawing Pins Package Qty Eco Plan(2) Lead/Ball FinishMSL Peak Temp (3) TRF3702IRHC ACTIVE QFN RHC 16 92 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TRF3702IRHCG4 ACTIVE QFN RHC 16 92 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TRF3702IRHCR ACTIVE QFN RHC 16 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TRF3702IRHCRG4 ACTIVE QFN RHC 16 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR (1)The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2)Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontentfor the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS):TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt):This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br):TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. PACKAGE OPTION ADDENDUM www.ti.com 5-Feb-2007 Addendum-Page 1

Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. Cu stomers should obtain the latest relevant information before placing orders and should verify that such info rmation is current and complete. All products are sold subject to TI’s terms and conditions of sale supplied at the time of order acknowledgment. TI warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with TI’s standard warranty. Testing and other quality control techniques are used to the extent TI deems necessary to support this warranty. Except where mandated by governm ent requirements, testing of all parameters of each product is not necessarily performed. TI assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using TI component s. To minimize the risks associated with customer products and applications, customers should provide adequate design and operating safeguards. TI does not warrant or represent that any license, either express or implie d, is granted under any TI patent right, copyright, mask work right, or other TI intellectual property right relating to any combination, machine, or process in which TI products or services are us ed. Information published by TI regarding third-party products or services does not consti tute a license from TI to use such products or services or a warranty or endorsement thereof. Use of such information may require a license from a third party under the patents or other intellectual property of the third party, or a license from TI under the pat ents or other intellectual property of TI. Reproduction of information in TI data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, lim itations, and notices. Reproduction of this information with alteration is an unfair and deceptive business practice. TI is not responsible or liable for such altered documentation. Resale of TI products or services with statements diffe rent from or beyond the parameters stated by TI for that product or service voids all express and any imp lied warranties for the associated TI product or service and is an unfair and deceptive business practice. TI is not responsible or liable for any such statements. Following are URLs where you can obtain information on other Texas Instruments products and application solutions: Products Applications Amplifiers amplifier.ti.c om Audio www.ti.com/audio Data Converters dataconverter.ti.co m Automotive www.ti.com/automotive DSP dsp.ti.com Broadband www.ti.com/broadband Interface interface.ti.com Digital Control www.ti.com/digitalcontrol Logic logic.ti.com Military www.ti.com/military Power Mgmt power.ti.com Optical Networking www.ti.com/opticalnetwork Microcontrollers microcontroller.ti.com Security www.ti.com/security Low Power Wireless www.ti.com/lpw Telephony www.ti.com/telephony Video & Imaging www.ti.com/video Wireless www.ti.com/wireless Mailing Address: Texas Instruments Post Office Box 6553 03 Dallas, Texas 75265 Copyright © 2007, Texas Instruments Incorporated