TR5270 MARKTECH | Alldatasheet

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Technical content

Subject to change without notice. www.cree.com

FEATURES

  • Rectangular LED RF Performance – 450 nm – 200 mW min – 460 nm – 180 mW min
  • Adhesive Die Attach
  • Low Forward Voltage – 3.2 V Typical at 120 mA
  • Maximum DC Forward Current - 250 mA
  • Class 2 ESD Rating
  • InGaN Junction on Thermally Conductive SiC Substrate

APPLICATIONS

  • Large LCD Backlighting – Television
  • General Illumination
  • Medium LCD Backlighting – Portable PCs – Monitors
  • LED Video Displays
  • White LEDs TR5270™ LEDs CxxxTR5270-Sxx00 (175-μm) CxxxTR5270-Sxx00-3 (250-μm) Data Sheet Cree’s TR5270 LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for the TV-backlighting and general-illumination markets. The TR5270 LEDs are among the brightest in the top-view market while delivering a low forward voltage, resulting in a very bright and highly efficient solution. The TR5270 is available in two chip thicknesses: 175 µm and 250 µm. The 250-µm-thick version offers 5% improvement brightness over the 175-µm version due the increased bevel area. The design is optimally suited for industry-standard top-view packages. CxxxTR5270-Sxx00 (175-µm) Chip Diagram D ata Sheet: CPR3ET Rev. - Top View Bottom ViewDie Cross Section Anode (+) 90-μm diameter TR5270 LED 520 x 700 μm t = 175 μm Bottom Surface 347 x 527 μm Cathode (-) 98-μm diameter

Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and TR and TR5270 are trademarks of Cree, Inc. 2 CPR3ET Rev. - Cree, Inc.

4600 Silicon Drive

Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com CxxxTR5270-Sxx00-3 (250-µm) Chip Diagram Mechanical Specifications CxxxTR5270-Sxx00 (175-µm) Description Dimension Tolerance P-N Junction Area (μm) 450 x 640 ±35 Chip Area (μm) 520 x 700 ±35 Chip Thickness (μm) 175 ±15 Au Bond Pad Diameter Anode (μm) 90 ±10 Au Bond Pad Thicknesses (μm) 1.0 ±0.5 Au Bond Pad Diameter Cathode (μm) 98 ±10 Bottom Area (μm) 347 x 527 ±35 Mechanical Specifications CxxxTR5270-Sxx00-3 (250-µm) Description Dimension Tolerance P-N Junction Area (μm) 450 x 640 ±35 Chip Area (μm) 520 x 700 ±35 Chip Thickness (μm) 250 ±15 Au Bond Pad Diameter Anode (μm) 90 ±10 Au Bond Pad Thicknesses (μm) 1.0 ±0.5 Au Bond Pad Diameter Cathode (μm) 98 ±10 Bottom Area (μm) 260 x 440 ±45 Top View Bottom ViewDie Cross Section Anode (+) 90-μm diameter TR5270 LED 520 x 700 μm t = 250 μm Bottom Surface 260 x 440 μm Cathode (-) 98-μm diameter

Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and TR and TR5270 are trademarks of Cree, Inc. 3 CPR3ET Rev. - Cree, Inc. Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Maximum Ratings at TA = 25°C Notes 1, 3 & 4 CxxxTR5270-Sxx00 and CxxxTR5270-Sxx00-3 DC Forward Current 250 mA Peak Forward Current (1/10 duty cycle @ 1 kHz) 300 mA LED Junction Temperature 150°C Reverse Voltage 5 V Operating Temperature Range -40°C to +100°C Storage Temperature Range -40°C to +100°C Electrostatic Discharge Threshold (HBM) Note 2 1000 V Electrostatic Discharge Classification (MIL-STD-883E) Note 2 Class 2 Typical Electrical/Optical Characteristics at TA = 25°C, If = 120 mA Note 3 Part Number Forward Voltage (Vf, V) Reverse Current [I(Vr=5V), μA] Full Width Half Max (λD, nm) C450TR5270-Sxx000 2.7 3.2 3.5 2 20 C460TR5270-Sxx000 2.7 3.2 3.5 2 21 C450TR5270-Sxx000-3 2.7 3.2 3.5 2 20 C460TR5270-Sxx000-3 2.7 3.2 3.5 2 21 Notes: 1. Maximum ratings are package-dependent. The above ratings were determined using lamps in chip-on-MCPCB (metal core PCB) packages for characterization. Ratings for other packages may differ. Junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). 2. Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. 3. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 120 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values expected by manufacturer in large quantities and are provided for information only. All measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy encapsulant and clear epoxy die attach). Optical characteristics measured in an integrating sphere using Illuminance E. 4. The maximum forward current is determined by the thermal resistance between the LED junction and ambient. It is crucial for the end-product to be designed in a manner that minimizes the thermal resistance from the LED junction to ambient in order to optimize product performance. Max If (mA) 250 Max Vf @Max If (V) 3.5 Max Tj (Deg C) 150 Max Power (W) 0.875 Thermal Resistance (C/W) 10 20 30 If @ Tamb Rth (j-A) = Tamb Tamb 250 25 25 25 250 141.25 132.5 123.75 0 150 150 150 100 150 200 250 300 50 75 100 125 150 175 Maximum Forward Current (mA) Ambient Temperature (C) Rth j-a = 10 C/W Rth j-a = 20 C/W Rth j-a = 30 C/W Rth j-a = 40 C/W

Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and TR and TR5270 are trademarks of Cree, Inc. 4 CPR3ET Rev. - Cree, Inc. Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Standard Bins for CxxxTR5270-Sxx00 LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from only one bin. Sorted die kit (CxxxTR5270-Sxxxx or CxxxTR5270-Sxxxx-3 ) orders may be filled with any or all bins (CxxxTR5270-xxxx or CXXXTR5270-xxxx-3) contained in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 120 mA. Note: The radiant-flux values above are representative of the die in a Cree 5-mm lamp. C450TR5270-S20000 (175-µm thick) C450TR5270-0209 C450TR5270-0210 C450TR5270-0211 C450TR5270-0212 C450TR5270-0205 C450TR5270-0206 C450TR5270-0207 C450TR5270-0208 Dominant Wavelength (nm) 447.5 450 452.5445 455 220 200 Radiant Flux (mW) C460TR5270-S18000 (175-µm thick) C460TR5270-0205 C460TR5270-0206 C460TR5270-0207 C460TR5270-0208 C460TR5270-0201 C460TR5270-0202 C460TR5270-0203 C460TR5270-0204 Dominant Wavelength (nm) 457.5 460 462.5455 465 Radiant Flux (mW) 200 180 C450TR5270-S21000-3 (250-µm thick) C450TR5270-0309-3 C450TR5270-0310-3 C450TR5270-0311-3 C450TR5270-0312-3 C450TR5270-0305-3 C450TR5270-0306-3 C450TR5270-0307-3 C450TR5270-0308-3 Dominant Wavelength (nm) 447.5 450 452.5445 455 230 210 Radiant Flux (mW) C460TR5270-S19000-3 (250-µm thick) C460TR5270-0305-3 C460TR5270-0306-3 C460TR5270-0307-3 C460TR5270-0308-3 C460TR5270-0301-3 C460TR5270-0302-3 C460TR5270-0303-3 C460TR5270-0304-3 Dominant Wavelength (nm) 457.5 460 462.5455 465 Radiant Flux (mW) 210 190

Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and TR and TR5270 are trademarks of Cree, Inc. 5 CPR3ET Rev. - Cree, Inc. Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Characteristic Curves These are representative measurements for the TR5270 LED product. Actual curves will vary slightly for the various radiant flux and dominant wavelength bins. 25% 50% 75% 100% 125% 150% 175% 200% 0 62.5 125 187.5 250 Relative Intensity vs. Forward Current Relative Light Intensity If (mA) 0 62.5 125 187.5 250 Wavelength Shift vs. Forward Current Dominant Wavelength Shift (nm) If (mA) 100 125 150 175 200 0 1 2 3 4 Forward Current vs. Forward Voltage If (mA) Vf (V) 70% 75% 80% 85% 90% 95% 100% 25 50 75 100 125 150 Relative Light Intensity Vs Junction Temperature Relative Light Intensity Junction Temperature (°C) 25 50 75 100 125 150 Dominant Wavelength Shift Vs Junction Temperature Dominant Wavelength Shift (nm) Junction Temperature (°C) -0.400 -0.350 -0.300 -0.250 -0.200 -0.150 -0.100 -0.050 25 50 75 100 125 150 Voltage Shift Vs Junction Temperature Voltage Shift (V) Junction Temperature (°C)

Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and TR and TR5270 are trademarks of Cree, Inc. 6 CPR3ET Rev. - Cree, Inc. Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Radiation Pattern This is a representative radiation pattern for the TR5270 (175-µm) LED product. Actual patterns will vary slightly for each chip. This is a representative radiation pattern for the TR5270 (250-µm) LED product. Actual patterns will vary slightly for each chip. Copyright © 2010, Cree, Inc. (Confidential) pg. 1 Far Fields – TR430