TR3547 MARKTECH | Alldatasheet
Document overview
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Technical content
Subject to change without notice. www.cree.com
FEATURES
- Rectangular LED RF performance – 450 & 460 nm – 70 mW min
- Low forward voltage - 3.2 Vf typical at 50 mA
- Maximum DC forward current – 150 mA
- 1000-V ESD threshold rating
- InGaN junction on thermally conductive SiC substrate
APPLICATIONS
- Large LCD backlighting – Television
- General illumination
- Medium LCD backlighting – Portable PCs – Monitors
- LED video displays
- White LEDs TR3547™ LEDs CxxxTR3547-Sxx00 Data Sheet Cree’s TR3547 LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for the TV-backlighting and general-illumination markets. The TR3547 LEDs are among the brightest in the top-view market while delivering a low forward voltage, resulting in a very bright and highly efficient solution. The design is optimally suited for industry- standard top-view packages. CxxxTR3547-Sxx00 Chip Diagram D ata Sheet: CPR3FJ Rev. - Top View Bottom ViewDie Cross Section Anode (+) 90 μm diameter TR3547 LED 470 x 350 μm Junction 430 x 310 μm t = 155 μm Bottom Area 320 x 200 μm Cathode (-) 98 x 98 μm
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and TR and TR3547 are trademarks of Cree, Inc. CPR3FJ Rev. - Cree, Inc.
4600 Silicon Drive
Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Maximum Ratings at TA = 25°C Notes 1&3 CxxxTR3547-Sxx00 DC Forward Current 150 mA Peak Forward Current (1/10 duty cycle @ 1 kHz) 200 mA LED Junction Temperature 150°C Reverse Voltage 5 V Operating Temperature Range -40°C to +100°C Storage Temperature Range -40°C to +100°C Electrostatic Discharge Threshold (HBM) Note 2 1000 V Electrostatic Discharge Classification (MIL-STD-883E) Note 2 Class 2 Typical Electrical/Optical Characteristics at TA = 25°C, If = 50 mA Note 3 Part Number Forward Voltage (Vf, V) Reverse Current [I(Vr=5V), μA] Full Width Half Max (λD, nm) C450TR3547-Sxx00 2.9 3.2 3.5 2 20 C460TR3547-Sxx00 2.9 3.2 3.5 2 21 Mechanical Specifications CxxxTR3547-Sxx00 Description Dimension Tolerance P-N Junction Area (μm) 310 x 430 ±35 Chip Area (μm) 350 x 470 ±35 Chip Thickness (μm) 155 ±15 Au Bond Pad Diameter Anode (μm) 90 -5, +15 Au Bond Pad Thicknesses (μm) 1.0 ±0.5 Au Bond Pad Area Cathode (μm) 98 x 98 -5, +15 Bottom Area (μm) 200 x 320 ±35 Notes: 1. Maximum ratings are package-dependent. The above ratings were determined using a Cree SMT package (with silicone encapsulation) for characterization. Ratings for other packages may differ. Junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). 2. Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. 3. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 50 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values expected by manufacturer in large quantities and are provided for information only. All measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy encapsulant and silicone die attach). Optical characteristics measured in an integrating sphere using Illuminance E.
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and TR and TR3547 are trademarks of Cree, Inc. CPR3FJ Rev. - Cree, Inc. Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Standard Bins for CxxxTR3547-Sxx00 LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from only one bin. Sorted die kit (CxxxTR3547-Sxxxx) orders may be filled with any or all bins (CxxxTR3547-xxxx) contained in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 50 mA. Dominant Wavelength (nm) C450TR3547-S7500 C450TR3547-0217 C450TR3547-0218 C450TR3547-0219 C450TR3547-0220 C450TR3547-0213 C450TR3547-0214 C450TR3547-0215 C450TR3547-0216 C450TR3547-0209 C450TR3547-0210 C450TR3547-0211 C450TR3547-0212 C450TR3547-0205 C450TR3547-0206 C450TR3547-0207 C450TR3547-0208 447.5 450 452.5445 455 Radiant Flux (mW) C460TR3547-S7600 C460TR3547-0217 C460TR3547-0218 C460TR3547-0219 C460TR3547-0220 C460TR3547-0213 C460TR3547-0214 C460TR3547-0215 C460TR3547-0216 C460TR3547-0209 C460TR3547-0210 C460TR3547-0211 C460TR3547-0212 C460TR3547-0205 C460TR3547-0206 C460TR3547-0207 C460TR3547-0208 Dominant Wavelength (nm) 457.5 460 462.5455 465 Radiant Flux (mW)
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and TR and TR3547 are trademarks of Cree, Inc. CPR3FJ Rev. - Cree, Inc. Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Characteristic Curves These are representative measurements for the TR LED product. Actual curves will vary slightly for the various radiant flux and dominant wavelength bins. 100 120 320 420 520 620 Relative Intensity (%) Wavelength (nm) Relative Intensity vs Peak Wavelength 50% 100% 150% 200% 250% 300% 350% 400% 0 50 100 150 200 Relative Light Intensity If (mA) Relative Intensity vs. Forward Current 0 50 100 150 200 Dominant Wavelength Shift (nm) If (mA) Wavelength Shift vs. Forward Current 50% 100% 150% 200% 250% 300% 350% 400% 0 50 100 150 200 Relative Light Intensity If (mA) Relative Intensity vs. Forward Current 0 50 100 150 200 Dominant Wavelength Shift (nm) If (mA) Wavelength Shift vs. Forward Current 100 150 200 0 1 2 3 4 5 If (mA) Vf (V) Forward Current vs. Forward Voltage
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and TR and TR3547 are trademarks of Cree, Inc. CPR3FJ Rev. - Cree, Inc. Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Copyright © 2009, Cree, Inc. ConfidentialCopyright © 2009, Cree, Inc. Confidential pg. 1 Radiation Pattern This is a representative radiation pattern for the TR LED product. Actual patterns will vary slightly for each chip.