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NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0134A DOC Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, CA 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFT978 └ Screening 2/ __ = No Screening TX = TX Level TXV = TXV Level S = S Level └ Package /5 = TO-5 G = CERPACK S.5 = SMD.5 SFT978 Series

0.1 AMP, 1000 Volts

High Voltage, Medium Power NPN Transistor Features:  BV CEO to 1000 Volts  Low Leakage at High Temperature  High Linear Gain, Low Saturation Voltage  200 oC Operating Temperature  Gold Eutectic Die Attach  TX, TXV, S-Level Screening Available  Designed for Complementary Use with SFT529  Available in TO-5, Cerpack, and SMD.22 Cases Maximum Ratings3/ Symbol Max Units Collector – Emitter Voltage VCEO 1000 Volts Collector – Base Voltage VCBO 1500 Volts Emitter – Base Voltage VEBO 7 Volts Collector Current IC 0.1 Amps Base Current IB 50 mAmps Total Power Dissipation Derate above TC = 25ºC (TC = 25ºC) (TA = 25ºC) PD 5.0 28.6 Watts mW /ºC Operating & Storage Temperature T J & TSTG -65 to +125 ºC Maximum Thermal Resistance (Junction to Case) TO-5 CERPACK SMD.5 R0JC ºC/W ºC/W ºC/W Maximum Thermal Resistance (Junction to Ambient) TO-5 CERPACK SMD.5 R 0JA --- 440 440 ºC/W ºC/W ºC/W TO-5 (/5) CERPACK (G) SMD.5 (S.5) NOTES: 1/ For ordering information, price, operating curves, and availability, contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ Unless otherwise specified, maximum ratings/electrical characteristics at 25°C.

NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0134A DOC Solid State Devices, Inc. Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT978 Series Electrical Characteristics3/ Symbol Min Typ Max Units Collector – Emitter Breakdown Voltage* IC = 10 mA BVCEO 900 1000 - Volts Collector – Base Breakdown Voltage* IC = 200 μA BVCBO 1000 1700 - Volts Emitter – Base Breakdown Voltage IE = 200 µA BVEBO 6 7.5 - Volts Collector Cutoff Current VCB = 1500v, TA = 25°C VCB = 1500v, TA = 100°C VCB = 1500v, TA = 150°C VCE = 800v, TA = 25°C VCE = 800v, TA = 100°C VCE = 800v, TA = 150°C ICBO1 ICBO2 ICBO3 ICEO1 ICEO2 ICEO3 0.04 0.3 12.5 0.025 µA Emitter Cutoff Current VEB = 7 V, TA = 25°C VEB = 7 V, TA = 100°C VEB = 7 V, TA = 150°C IEBO 0.1 0.15 0.45 µA DC Current Gain* IC = 1 mA, VCE = 2 V IC = 1 mA, VCE = 10 V IC = 50 mA, VCE = 2 V IC = 50 mA, VCE = 10 V IC = 500 mA, VCE = 10 V IC = 1 A, VCE = 5 V IC = 25 mA, VCE = 10 V TA = -55°C HFE 100 100 1.5 140 145 145 150 100 Collector-Emitter Saturation Voltage* IC = 100 mA, IB = 10 mA VCE (SAT) - 125 350 mV Base-Emitter Saturation Voltage IC = 100 mA, IB = 10 mA IC = 250 mA, IB = 25 mA VBE (SAT) - 715 790 850 - mV Current Gain Bandwidth Product* (IC = 10 mA, VCE = 10 V, f = 10 MHz) fT 25 30 - MHz Output Capacitance VCB = 20 V, IE = 0 A, f = 1.0MHz Cob - 22 30 pF Turn on Delay Time Rise Time Storage Time Fall Time V CC= 100 V IC= 100 mA IB1 = IB2 = 10 mA td tr ts tf 140 200 2.6 300 200 300 3.2 400 ns ns μs ns NOTES: 1/ For ordering information, price, operating curves, and availability, contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ Unless otherwise specified, maximum ratings/electrical characteristics at 25°C. PIN ASSIGNMENT (Standard) Package Collector Emitter Base TO-5 (/5) Pin 3 Pin 1 Pin 2 CERPACK (G) CASE Pin 1 Pin 2 SMD.5 (S.5) Pin 1 Pin 2 Pin 3

NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0134A DOC Solid State Devices, Inc. Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT978 Series CASE OUTLINES CERPACK (G): TO-5 (/5): SMD.5 (S.5):