DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 3

Technical content

NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0128A DOC Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ └ Screening 2/ __ = Not Screened TX = TX Level TXV = TXV Level S = S Level Lead Options __ = Straight Leads DB = Down Bend UB = Up Bend Package N = TO-258 P = TO-259 Polarity 4 = NPN 7 = PNP SFT6284 (NPN) SFT6287 (PNP)

50 AMP

NPN/PNP COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS Features:  Enhanced BV CEO performance: 250V (NPN)/120V (PNP)  Low Saturation Voltage  200 oC Operating Temperature  Hermetically Sealed, Isolated Power Package  TX, TXV, S-Level Screening Available. Consult Factory. Application Notes: SFT6284/6287 Darlington Transistors are enhanced performance replacements for Motorola MJ11032/11033. Designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. Particularly suited for line operated switchmode applications such as:  Switching Regulators  Inverters  Solenoid and Relay Drives  Motor Controls Maximum Ratings Symbol Value Units Collector – Emitter Voltage SFT6284 SFT6287 VCEO 250

120 Volts

Collector – Base Voltage SFT6284 SFT6287 VCBO 350 Emitter – Base Voltage SFT6284 SFT6287 VEBO 5

8 Volts

Collector Current Continuous Peak IC ICM

100 Amps

Derate above 50ºC @ T C = 25ºC @ TC = 100ºC PD 350 200 Watts Watts W/ºC Operating & Storage Temperature T J & TSTG -65 to +200 ºC Maximum Thermal Resistance (Junction to Case) R0JC 0.5 (typ. 0.22) ºC/W NOTES: TO-258 (N) TO-259 (P) 1/ For ordering information, price, operating curves, and availability - contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request.

NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0128A DOC Solid State Devices, Inc. Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT6284 (NPN) SFT6287 (PNP) Electrical Characteristics, Tc= 25 ºC Symbol Min Max Units Collector – Emitter Breakdown Voltage (IC = 100 mA, IB = 0) SFT6284 SFT6287 VCEO(sus) 250 120 –– Volts Collector Cutoff Current VCE = 50 V ICEO –– 0.5 mA Collector Cutoff Current VCE = 100 V, VBE(off) = 1.5V ICEX –– 0.5 mA Collector Cutoff Current VCE = 50 V, R= 1 kΩ ICER1 –– 1 mA Collector Cutoff Current VCE = 50 V, R= 1 kΩ, TA= 150ºC ICER2 –– 10 mA Emitter Cutoff Current VEB = 5V, IC = 0 IEBO –– 5 mA DC Current Gain* (VCE = 3V) IC = 10 A IC = 20 A HFE1 HFE2 1000 500 18,000 DC Current Gain* (VCE = 5V) IC = 25 A IC = 50 A HFE3 HFE4 1000 400 18,000 Collector-Emitter Saturation Voltage* IC = 10 A, IB = 0.04 A IC = 25 A, IB = 0.25 A IC = 50 A, IB = 0.50 A VCE (SAT)1 VCE (SAT)2 VCE (SAT)3 1.5 2.0 3.0 Volts Collector-Emitter Saturation Voltage* IC = 25 A, IB = 0.25 A IC = 50 A, IB = 0.50 A VBE (SAT)1 VBE (SAT)2 3.0

4.0 Volts

Bandwidth (VCE = 3 V, f= 1MHz, IC = 5A) SFT6284 SFT6287 fT 1.5 –– MHz Output Capacitance VCB = 10V, IE = 0A, f = 0.1 – 1 MHz Cob –– 650 pF NOTES: *Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%

NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0128A DOC Solid State Devices, Inc. Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT6284 (NPN) SFT6287 (PNP) CASE OUTLINE: TO-258 (N) Pin Out: 1 – Emitter 2 – Base 3 – Collector Lead Options: Up Bend (UB) Down Bend (DB) CASE OUTLINE: TO-259 (P)