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NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. B17BH DATA SHEET #: TR0100B DOC Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ └ Screening 2/ __ = Not Screened TX = TX Level TXV = TXV Level S = S Level Polarity: __ = Normal R = Reverse Package 3/ J = TO-257, glass seals JC = TO-257, ceramic seals SFT501J and SFT503J SFT501JC and SFT503JC Series

5 AMP

200 Volts

Features:  Fast Switching  High Frequency, 80 MHz Typical  BVCEO 150 Volts Min  High Linear Gain  Low Saturation Voltage and Leakage  200ºC Operating Temperature  Gold Eutectic Die Attach  Designed for Complementary Use with SFT502/G and SFT504/G  TX, TXV, and S Level Screening Available Maximum Ratings Symbol Value Units Collector – Emitter Voltage VCEO 150 Volts Collector – Base Voltage VCBO 200 Volts Emitter – Base Voltage VEBO 7 Volts Continues Collector Current IC 5 Amps Base Current IB 1 Amps Power Dissipation @ TC = 100ºC Derate above 100ºC PD 20 200 W mW/ºC Operating & Storage Temperature Top & Tstg -65 to +200 ºC Maximum Thermal Resistance Junction to Case R θJC 5 (typ 3) ºC/W NOTES: *Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2% / For Ordering Information, Price, and Availability Contact Factory. 2/ Screening per MIL-PRF-19500 3/ For Package Outlines Contact Factory. 4/ Unless Otherwise Specified, All Electrical Characteristics @25ºC. Available Part Numbers: SFT501J SFT501JC SFT503J SFT503JC TO-257 PIN ASSIGNMENT Code Function Pin 1 Pin 2 Pin 3 - Normal Collector Emitter Base R Reverse Collector Base Emitter

NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. B17BH DATA SHEET #: TR0100B DOC Solid State Devices, Inc. Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT501J and SFT503J SFT501JC and SFT503JC Series Electrical Characteristic4/ Symbol Min Typ Max Units Collector – Emitter Breakdown Voltage IC = 50mA BVCEO 150 200 –– Volts Collector – Base Breakdown Voltage IC = 200µA BVCBO 200 275 –– Volts Emitter – Base Breakdown Voltage IE = 200µA BVEBO 7 13 –– Volts Collector – Cutoff Current VCE = 100 V ICEO –– –– 1.0 µA Collector – Cutoff Current VCB = 100 V ICBO –– –– 500 nA Emitter – Cutoff Current VEB = 6 V IEBO –– –– 500 nA DC Current Gain * SFT501 SFT503 VCE = 5V, IC = 50mA VCE = 5V, IC = 2.5A VCE = 5V, IC = 5A VCE = 5V, IC = 50mA VCE = 5V, IC = 2.5A VCE = 5V, IC = 5A hFE Collector – Emitter Saturation Voltage * IC = 2.5A, IB = 250mA IC = 5.0A, IB = 500mA VCE(Sat) –– 0.35 0.6 0.75

1.5 Volts

Base – Emitter Saturation Voltage * IC = 2.5A, IB = 250mA IC = 5.0A, IB = 500mA VBE(Sat) –– 1.0 1.2 1.3 Current Gain Bandwidth Product VCE = 5V, IC = 0.5A, f = 10MHz fT 40 60 –– MHz Output Capacitance VCB = 10V, IE = 0A, f = 1MHz cob –– 130 225 pF Input Capacitance VBE = 10V, IC = 0A, f = 1MHz Cib –– 450 600 pF Delay Time VCC = 50V, IC = 5A, IB1 = IB2 = 0.5A td –– 25 50 nsec Rise Time t r –– 40 250 nsec Storage Time t S –– 320 600 nsec Fall Time tf –– 130 300 nsec Case Outline: TO-257