TR0099 SSDI | Alldatasheet

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Technical content

Solid State Devices, Inc.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ └ Screening 2/ __ = Not Screened TX = TX Level TXV = TXV Level S = S Level └ Lead Bend 3/ 4/ __ = Straight Leads UB = Up Bend DB = Down Bend └ Pin Out Configuration 5/ __ = Normal R = Optional └ Package 3/ /59 = TO-59 /66 = TO-66 J = TO-257 S.5 = SMD .5 SFT5001

5 AMPS

125 Volts

Features:

  • Radiation Tolerant
  • Superior to JEDEC 2N5001 Series
  • High Frequency, f T > 80MHz
  • Very Low Saturation
  • Fast Switching, 130 ns Max t(on)
  • Designed for Complementary Use with SFT3997
  • TX, TXV, S-Level Screening Available. Consult Factory. Maximum Ratings Symbol Value Units Collector – Emitter Voltage VCEO 80 Volts Collector – Base Voltage VCBO 125 Volts Emitter – Base Voltage VEB O 7 Volts Collector Current IC 5 Amps Base Current IB 1 Amps Total Power Dissipation @ TC = 100ºC Derate Above 100ºC PD 30 0.3 Watts W/ºC Operating & Storage Temperature T J & TSTG -65 to +200 ºC Maximum Thermal Resistance (Junction to Case) R 0JC 3.33 ºC/W NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0099A DOC

Solid State Devices, Inc. Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT5001 Electrical Characteristics Symbol Min Max Units Collector – Emitter Blocking Voltage * (IC = 10 mA) BVCEO 80 –– Volts Collector – Base Blocking Voltage (IC = 20 µA) BVCBO 125 –– Volts Emitter – Base Blocking Voltage (IE = 20 µA) BVEB O 7 –– Volts Collector Cutoff Current (V CE = 40 V) ICEO –– 10 μA Collector Cutoff Current (V CB = 100 V) ICBO –– 1.0 μA Emitter Cutoff Current (VEB = 6 V) IEB O –– 1.0 μA DC Current Gain * (IC = 50 mA, VCE = 5 V) (IC = 1.0 A, VCE = 5 V) (IC = 5.0 A, VCE = 5 V) hFE Collector-Emitter Saturation Voltage * (IC = 1.0 A, IB = 100 mA) (IC = 5.0 A, IB = 500 mA) VCE (SAT) –– 0.5

1.0 Volts

Base-Emitter Saturation Voltage * (IC = 1.0 A, IB = 100 mA) (IC = 5.0 A, IB = 500 mA) VBE ( SAT ) –– 0.9

1.2 Volts

Current Gain – Bandwidt h Product VCE = 5 V, IC = 0.5 A, f = 10 MHz fT 80 –– MHz Output Capacitance VCB = 10 V, IE = 0 A, f = 1.0 MHz Cob –– 75 pF Delay Time Rise Time t(on) td tr –– 150 ns Storage Time Fall Time (VCC = 20 V, IC = 1.0 A, VBE (off) = 3.7 V, IB1 = IB2 = 100 mA, RL = 20 Ω) t(off) ts tf –– 500 ns NOTES: * Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2% / For Ordering Information, Price, and Availability Contact Factory. 2/ Screening per MIL-PRF-19500 3/ For Package Outlines Contact Factory. 4/ Up and Down Bend Confi gurations are Available for ‘J’ (TO- 257) Packages Only. 5/ Optional Pin Out Configurations are Available for ‘J’ (TO- 257) Packages Only. 6/ Unless Otherwise Specified, All Electrical Characteristics @25ºC. Available Part Numbers: SFT5001/59 SFT5001/66 SFT5001J SFT5001JUB SFT5001JDB SFT5001JR SFT5001JRUB SFT5001JRDB SFT5001S.5 PIN ASSIGNMENT (Standard) Package Collector Emitter Base TO-59 (/59) Pin 1 Pin 2 Pin 3 TO-66 (/66) Case Pin 2 Pin 3 TO-257 (J) Pin 1 Pin 2 Pin 3 SMD .5 (S.5) Pin 1 Pin 2 Pin 3 PIN ASSIGNMENT (Optional) Package Collector Emitter Base TO-257 (JR) Pin 2 Pin 3 Pin 1