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NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0097B DOC Solid State Devices, Inc.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET SMD.22 SMD.22L PIN 1= COLLECTOR; PIN 2= EMITTER; PIN 3= BASE SFT4300S.22 SFT4300S.22L

2 A, 150 Volts general purpose

Features:  Radiation tolerant  Fast switching  hermetic surface mount device with excellent thermal properties  Available with lead extensions (SMD.22L)  Complementary use with SFT5333S.22  Available in Reverse Polarity  TX, TXV, S-Level screening available Maximum Ratings Symbol Value Units Collector – Emitter Voltage VCEO 80 Volts Collector – Base Voltage VCB 150 Volts Emitter - Base Voltage VBE 8 Volts Continuous Collector Current continuous peak IC ICmax

5 Amps

Power Dissipation @ TC = 25ºC Power Dissipation @ TA = 25ºC note 1 note 2 PD 15 1.0 W Operating & Storage Temperature Top & Tstg -65 to +200 ºC Maximum Thermal Resistance Junction to Case and to ambient RθJC RθJA 11.67 (typ 8) 175 ºC/W Note1: Derated 85.7 mW/°C above Tc= 25°C Note2: Derated 5.7 mW/°C above TA= 25°C .065 ±.010 .140 .052 .134 .030 .070 .090 .150 ±.007 .220±.007 .005 TYP .040 .050±.015.050±.015 .005±.002 .005 TYP .220±.007 .150 ±.007 .090.070 .025 MIN.120 .040 .120 .070 ±.010

NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0097B DOC Solid State Devices, Inc. Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT4300S.22 SFT4300S.22L Electrical Characteristic 4/ Symbol Min Typ Max Units Collector – Emitter Sustaining Voltage I C = 30 mA BVCEO(sus) 80 95 - V Collector – Base Breakdown Voltage IC = 0.2 mA BVCBO 150 240 - V Emitter - Base Breakdown Voltage IE= 0.2 mA BVEBO 8 9 - V Collector-Emitter Cutoff Current VCE = 40 V; IB = 0 ICEO –– 0.01 5 uA Collector-Base Cutoff Current VCB = 90 V; IE = 0 VCB = 90 V; IE = 0; Ta= 100 ºC ICBO1 ICBO2 75 uA Emitter-Base Cutoff Current VBE = 6 V; IC = 0 IEBO –– 0.01 1 uA DC Current Gain IC = 1.0 A, VCE = 5 V IC = 2.0 A, VCE = 5 V HFE1 HFE2 200 IC=0.5A, VCE=1V,Ta=-65ºC IC=2.0A, VCE=2V,Ta=-65ºC IC=5.0A, VCE=2V,Ta=-65ºC HFE7 HFE8 HFE9 Collector-Emitter Saturation Voltage I C = 1.0 A, IB = 100 mA IC = 2.0 A, IB = 200 mA IC = 5.0 A, IB = 500 mA VCE(sat)1 VCE(sat)2 VCE(sat)3 0.12 0.22 0.56 0.3 0.5 V Collector-Base Saturation Voltage IC = 5.0 A, IB = 500 mA VBE(sat)3 - 1.1 - V Base-Emitter ON Voltage IC = 2.0 A, VCE = 2 V VBE(on) - 0.83 1.2 V Current Gain Bandwidth Product IC = 0.5A, VCE = 5 V, f= 10 MHz fT 80 120 - MHz Input Capacitance VBE= 8 V, IC= 0, f= 1MHz Cib –– –– 225 pF Output Capacitance VCB= 30 V, IE= 0, f= 1MHz Cob –– –– 45 pF Switching Times VCC = 20 Vdc; IC = 1 A; VEB(off) = 3.7 V; IB1 = IB2= 100 mA; R L= 20Ώ ton toff 0.06 0.85 0.13 1.5 us NOTES: * Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2% 1/ For Ordering Information, Price, Availability Contact Factory. 2/ Screening per MIL-PRF-19500 3/ For Package Outlines Contact Factory. 4/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.