TR0076 SSDI | Alldatasheet

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Technical content

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, CA 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ └ Screening __ = No Screening TX = TX Level TXV = TXV Level S = S Level └ Lead Bend 3/ 4/ __ = Straight Leads UB = Up Bend DB = Down Bend └ Package 3/ /3 = TO-3 M = TO-254 S1 = SMD 1 SFT5671 and SFT5672 SFT5672E 30 – 50 AMPS 90 - 130 Volts High Power NPN Transistors Features:

  • High Frequency transistor with BVCEO to 130 Volts
  • Enhanced SOA capability and Fast Switching
  • High Power Dissipation 140 Watts
  • 200oC Operating Temperature
  • TX, TXV, S-Level Screening per MIL-PRF-19500 available; consult factory
  • Enhanced performance version: SFT5672E Maximum Ratings Symbol Value Units Collector – Emitter Voltage SFT5671 SFT5672 SFT5672E VCEO 120 130 Volts Collector – Base Voltage SFT5671 SFT5672 SFT5672E VCBO 120 150 250 Volts Emitter – Base Voltage VEBO 7 Volts Collector Current SFT5671, SFT5672 SFT5672E IC 30

50 Amps

Total Power Dissipation TO-3 (TC ≤ 25ºC) TO-254 (TC ≤ 25ºC) SMD 1 (TC ≤ 25ºC) PD 140 116 175 Watts Operating & Storage Temperature T J & TSTG -65 to +200 ºC Maximum Thermal Resistance (Junction to Case) TO-3 TO-254 SMD 1 R0JC 1.25 1.5 1.0 ºC/W TO-3 (/3) TO-254 (M) SMD 1(S1) NOTES: 1/ For Ordering Information, Price, and Availability Contact Factory. 3/ For Package Outlines Contact Factory. 4/ Up and Down Bend Configurations are Av ailable for ‘M’ (TO-254) Packages Only. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0076C DOC

Solid State Devices, Inc. Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT5671 and SFT5672 SFT5672E

Electrical Characteristics

unless otherwise specified, TA= 25ºC * pulse test; pw= 300 us, duty cycle= Symbol Min Max Units (IC = 200 mA) SFT5671 SFT5672 SFT5672E BVCEO 120 130 Collector – Emitter Blocking Voltage * (IC = 200 mA, RBE = 50 Ω) SFT5671 SFT5672 SFT5672E BVCER 110 140 250 Volts Collector – Emitter Blocking Voltage * (IC = 200 mA, VBE= -1.5 V) SFT5671 SFT5672 SFT5672E BVCEX 120 150 350 Volts Emitter – Base Blocking Voltage (IE = 100 µA) BVEBO 7 –– Volts Collector Cutoff Current (VCE = 80 V) SFT5671, SFT5672 SFT5672E ICEO 0.1 mA Collector Cutoff Current (VCB = 120 V) SFT5671 (VCB = 150 V) SFT5672 (VCB = 150 V) SFT5672E ICBO 0.1 mA Emitter Cutoff Current (VEB = 7 V) SFT5671, SFT5672 SFT5672E IEBO –– 0.1 mA Collector Cutoff Current TA= 25ºC TA= 25ºC TA= 25ºC TA= 150ºC TA= 150ºC (VCE = 110 V, VBE= 1.5 V) SFT5671 (VCE = 135 V, VBE= 1.5 V) SFT5672 (VCE = 135 V, VBE= 1.5 V) SFT5672E (VCE = 100 V, VBE= 1.5 V) SFT5671 (VCE = 100 V, VBE= 1.5 V) SFT5672 ICEX 0.1 mA DC Current Gain * (IC = 15 A, VCE = 2 V) (IC = 20 A, VCE = 5 V) (IC = 50 A, VCE = 5 V) SFT5672E (IC = 15 A, VCE = 2 V, TA= -65ºC) hFE 100 Small Signal Common-Emitter Forward Current Transfer Ratio (IC = 2 A, VCE = 10 V, f = 5 MHz) hfe 10 40 TO-3, SMD 1 (IC = 15 A, IB = 1.2 A) (IC = 30 A, IB = 6.0 A) 0.75 5.0 Collector-Emitter Saturation Voltage TO-254 (I C = 15 A, IB = 1.2 A) (IC = 30 A, IB = 6.0 A) VCE (SAT) 0.77 5.25 Volts Base-Emitter Saturation Voltage * (IC = 15 A, IB = 1.2 A) VBE (SAT) –– 1.5 Volts Output Capacitance VCB = 10 V, IE = 0 A, f = 1.0MHz Cob –– 900 pF Safe Operating Area VCE= 4.67 V, IC= 30 A, t= 1 s VCE= 24 V, IC= 5.0 A, t= 1 s VCE= 45 V, IC= 0.9 A, t= 1 s VCE= 90 V, IC= 0.19 A, t= 1 s, SFT5671, SFT5672 VCE= 120 V, IC= 0.11 A, t= 1 s, SFT5672E SOA1 SOA2 SOA3 SOA4 SOA4 Turn-on Time t(on) –– 500 ns Turn-off Time (VCC = 30 V, IC = 15.0 A, IB1 = IB2 = 1.2 A) t(off) –– 1.5 µs Available Part Numbers: SFT5671/3 SFT5671M SFT5671MUB SFT5671MDB SFT5671S1 SFT5672/3 SFT5672M SFT5672MUB SFT5672MDB SFT5672S1 SFT5672E/3 SFT5672EM SFT5672EMUB SFT5672EMDB SFT5672ES1 PIN ASSIGNMENT (Standard) Package Collector Emitter Base TO-3 (/3) Case Pin 2 Pin 3 TO-254 (M) Pin 1 Pin 2 Pin 3 SMD 1(S1) Pin 1 Pin 2 Pin 3