TR0045B SSDI | Alldatasheet

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Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, CA 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFT2369A2 _ _ _ _ └ Screening 2/ __= Commercial TX= TX Level TXV= TXV Level S= S Level └ Package GW= Gullwing SFT2369A2 Series Dual Microminiature Package 100 mA 15 Volts Dual NPN Transistor Features:

  • High Speed Switching Transistor
  • Suitable in chopper, UHF and RF application
  • Multiple Devices Reduce Board Space
  • Replacement for 2N2369AU
  • TX, TXV, S-Level Screening Available 2/ Maximum Ratings Symbol Value Units Collector – Emitter Voltage VCEO 15 Volts Collector – Base Voltage VCBO 40 Volts Emitter – Base Voltage VEBO 4.5 Volts Continuous Collector Current IC 100 mA Power Dissipation @ TA= 25ºC Per Device Total PD 360 500 mW Operating & Storage Temperature TOP & Tstg -65 to +200 ºC Maximum Thermal Resistance (Junction to PCB) RθJ-PCB 350 ºC/W Gullwing (GW) Tolerances: .xx ±.01 .xxx ±.005 PIN 1 PIN 4 PIN 6 PIN 3 PIN 1 PIN 4 PIN 6 PIN 3 SSDI .193 .015±.010 .040 ±.010 .350 ±.010 6x R.010 .033 3x .015 .010.107 .130 2x .050 (=.100) 6x .030 .107 .034 .125 6x .010 .025 5x R.018 .015 .035 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0045B DOC

Solid State Devices, Inc. Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT2369A2 Series Electrical Characteristic 4/ Symbol Min Max Units Collector – Emitter Sustaining Voltage IC= 10 mA BV CEO 15 — Volts Collector Cutoff Current VCE= 20 V, VBE= 0 V VCE= 10 V, VBE= 0.25 V, TA= 125ºC ICEX — 0.4 30 µA Collector Cutoff Current VCB= 32 V VCB= 40 V VCB= 20 V, TA= 150ºC ICBO — 0.2 µA Emitter Cutoff Current VEB= 4.0 V VEB= 4.5 V IEBO — 0.25 10 µA DC Forward Current Transfer Ratio 5/ V CE= 0.35 V, IC=1 0m A VCE= 0.40 V, IC= 30 mA VCE= 1.0 V, IC= 10 mA VCE= 1.0 V, IC= 100 mA VCE= 1.0 V, IC= 10 mA, TA= -55ºC HFE 120 120 120 120 Collector – Emitter Saturation Voltage 5/ IC=1 0m A , IB=1 . 0 m A IC= 30 mA, IB= 3.0 mA IC= 100 mA, IB= 10 mA IC= 10 mA, IB= 1.0 mA, TA= 125ºC VCE(Sat) 0.20 0.25 0.45 0.30 Volts Base – Emitter Saturation Voltage 5/ IC=1 0m A , IB=1 . 0 m A IC= 30 mA, IB= 3.0 mA IC= 100 mA, IB= 10 mA IC= 10 mA, IB= 1.0 mA, TA= -55ºC IC= 10 mA, IB= 1.0 mA, TA= 125ºC VBE(Sat) 0.7 0.8 0.59 0.85 0.9 1.2 1.02 Volts Frequency Transition VCE= 20V, IC= 20mA, f= 100 MHz f T 500 1000 MHz Output Capacitance VCE= 5 V, f= 1 MHz c ob — 4.0 pF Input Capacitance VCE= 0.5 V, f= 1 MHz c ib — 5.0 pF Switching Times Test Circuit per MIL-PRF-19500/317 ton toff ts ns NOTES: 1/ For Ordering Information, Price, and Availability Contact Factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ For Package Outlines Contact Factory. 4/ Unless Otherwise Specified, All Electrical Characteristics @ 25ºC. 5/ Pulse Test: Pulse Width= 300µsec, Duty Cycle= 2% Available Part Numbers: SFT2369A2GW PIN ASSIGNMENT Package Pin 1 Pin 2 Pin 3 Pin 4 Pin 5 Pin 6 GW Collector1 Base1 Emitter1 Collector2 Base2 Emitter2 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0045B DOC