DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 2

Technical content

NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0043E DOC Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, CA 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ 2N50 15 __ __ └ Screening 2/ __ = Not Screened TX = TX Level TXV = TXV Level S = S Level └ Package /39 = TO-39 /5 = TO-5 └ Family / Voltage 1000V 2N5015

0.5 AMP, 1000 Volts

FEATURES:  BVCER 1000 volts  Low Saturation Voltage  Low Leakage at High Temperature  High Gain, Low Saturation  200° C Operating, Gold Eutectic Die Attach  TX, TXV, and S-Level Screening Available Maximum Ratings Symbol Value Units Collector – Emitter Voltage (RBE= 1 kΩ) VCER 1000 V Collector – Base Voltage VCBO 1000 V Emitter – Base Voltage V EBO 5 V Collector – Emitter Breakdown Voltage BVCEO 450 V Peak Collector Current I C 0.5 A Peak Base Current I B 250 mA Total Device Dissipation @ TC = 100º C Derate above 100º C PD 2.0 W mW/ºC Operating and Storage Temperature T OP, TSTG -65 to +200 ºC Thermal Resistance, Junction to Case RθJC 50 (typ 22) ºC/W Notes: TO-39 TO-5 1/ For ordering information, price, operating curves, and availability - contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ Unless otherwise specified, maximum ratings/electrical characteristics at 25°C. 4/ Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2%

NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0043E DOC Solid State Devices, Inc. Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 2N5015 Case Outline: TO-39 PIN 1: EMITTER PIN 2: BASE PIN 3: COLLECTOR Case Outline: TO-5 PIN 1: EMITTER PIN 2: BASE PIN 3: COLLECTOR Electrical Characteristic 3/ Symbol Min Typ Max Units Collector – Emitter Breakdown Voltage (IC = 200 µADC, RBE = 1 KΩ) BVCER 1000 1300 –– V Collector–Base Breakdown Voltage (IC = 200 µADC) BVCBO 1000 - –– V Emitter–Base Breakdown Voltage (IE = 50 µADC) BVEBO 5 7 –– V Collector Cutoff Current (VCB = 760 V) (VCB = 760 V, TC = 100°C) ICBO –– 0.08 100 µAdc Emitter Cutoff Current (VEB= 4V) IEBO — 0.003 20 µA DC Current Gain 4/ (IC = 5 mADC, VCE = 10 VDC) (IC = 20 mADC, VCE = 10 VDC) hFE 10 180 Collector – Emitter Saturation Voltage 4/ (IC = 20 mADC, IB = 5 mADC) VCE(Sat) –– 0.07 1.8 Vdc Base – Emitter Saturation Voltage 4/ (IC = 20 mADC, IB = 5 mADC) VBE(Sat) –– 0.7 1.0 Vdc Current Gain Bandwidth Product (IC = 20 mADC, VCE = 10 VDC, f = 20 MHz) fT 20 25 –– MHz Output Capacitance (VCB = 10 VDC, IE = 0 ADC, f = 1.0 MHz) Cob –– 12.5 30 pF Delay Time VCC= 125 VDC, Rise Time IC= 100 mADC, Storage Time IB1= 20 mADC Fall Time IB2= 20 mADC pw= 2 us td tr ts tf 100 1500 450 200 1200 3000 800 nsec