TR0041 SSDI | Alldatasheet

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Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404 -1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFT502 __ __ SFT504 __ __ + Screening 2/ __ = Not Screen TX = TX Level TXV = TXV Level S = S Level + Package 3/ __ = TO-5 SFT502 and SFT504 Series

5 AMP

200 Volts

Features:

  • Radiation Tolerant
  • Fast Switching
  • High Frequency, 50 MHz Typical
  • BVCEO 150 Volts Min
  • High Linear Gain
  • Very Low Leakage and Saturation
  • 200ºC Operating Temperature
  • Gold Eutectic Die Attach
  • Designed for Complementary Use with SFT501 and SFT503 Maximum Ratings Symbol Value Units Collector – Emitter Voltage VCEO 150 Volts Collector – Base Voltage VCBO 200 Volts Emitter – Base Voltage VEBO 7 Volts Continues Collector Current IC 5 Amps Base Current IB 1 Amps Power Dissipation @ TC = 50ºC Derate above 50ºC PD 10 66.6 W mW/ºC Operating & Storage Temperature Top & Tstg -65 to +200 ºC Maximum Thermal Resistance Junction to Case Rθ JC 15 ºC/W TO-5 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. B176H DATA SHEET #: TR0041C DOC

Solid State Devices, Inc. Phone: (562) 404-7855 * Fax: (562) 404 -1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT502 and SFT504 Series Electrical Characteristic 4/ Symbol Min Typ Max Units Collector – Emitter Breakdown Voltage IC = 50mA BVCEO 150 –– –– Volts Collector – Base Breakdown Voltage IC = 200µA BVCBO 200 –– –– Volts Emitter – Base Breakdown Voltage IE = 200µA BVEBO 7 –– –– Volts Collector – Cutoff Current VCE = 100 V ICEO –– –– 1 µA Collector – Cutoff Current VCB = 100 V ICBO –– –– 500 nA Emitter – Cutoff Current VEB = 6 V IEBO –– –– 500 nA DC Current Gain * SFT502 SFT504 VCE = 5V, IC = 50mA VCE = 5V, IC = 2.5A VCE = 5V, IC = 5A VCE = 5V, IC = 50mA VCE = 5V, IC = 2.5A VCE = 5V, IC = 5A hFE Collector – Emitter Saturation Voltage * IC = 2.5A, IB = 250mA IC = 5.0A, IB = 500mA VCE(Sat) –– 0.75

1.5 Volts

Base – Emitter Saturation Voltage * IC = 2.5A, IB = 250mA IC = 5.0A, IB = 500mA VBE(Sat) –– 1.3 Current Gain Bandwidth Product VCE = 5V, IC = 0.5A, f = 10MHz fT 70 –– –– MHz Output Capacitance VCB = 10V, IE = 0A, f = 1MHz cob –– –– 225 pF Input Capacitance VBE = 10V, IC = 0A, f = 1MHz Cib –– –– 900 pF Delay Time td –– –– 50 nsec Rise Time tr –– –– 250 nsec Storage Time tS –– –– 900 nsec Fall Time VCC = 50V, IC = 5A, IB1 = IB2 = 0.5A tf –– –– 300 nsec NOTES: * Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2% 1/ For Ordering Information, Price, and Availability Contact Factory. 2/ Screening per MIL-PRF-19500 3/ For Package Outlines Contact Factory. 4/ Unless Otherwise Specified, All Electrical Characteristics @25ºC. Available Part Numbers: SFT502 SFT504 PIN ASSIGNMENT Package Pin 1 Pin 2 Pin 3 (Case) TO-5 Emitter Base Collector