TR0040 SSDI | Alldatasheet
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Technical content
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFT501 __ __ SFT503 __ __ └ Screening 2/ __ = Not Screen TX = TX Level TXV = TXV Level S = S Level Package 3/ __ = TO-5 SFT501 and SFT503 Series
5 AMP
200 Volts
Features:
- Radiation Tolerant
- Fast Switching
- High Frequency, 50 MHz Typical
- BVCEO 150 Volts Min
- High Linear Gain
- Very Low Leakage and Saturation
- 200ºC Operating Temperature
- Gold Eutectic Die Attach
- Designed for Complementary Use with SFT502 and SFT504 Maximum Ratings Symbol Value Units Collector – Emitter Voltage V CEO 150 Volts Collector – Base Voltage V CBO 200 Volts Emitter – Base Voltage V EBO 7 Volts Continues Collector Current I C 5 Amps Base Current I B 1 Amps Power Dissipation @ TC = 50ºC Derate above 50ºC P D 10 66.6 W mW/ºC Operating & Storage Temperature Top & Tstg -65 to +200 ºC Maximum Thermal Resistance Junction to Case R θJC 22 ºC/W TO-5 NOTES: * Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2% 1/ For Ordering Information, Price, and Availability Contact Factory. 2/ Screening per MIL-PRF-19500 3/ For Package Outlines Contact Factory. 4/ Unless Otherwise Specified, All Electrical Characteristics @25ºC. Available parts: SFT501 SFT503 PIN ASSIGNMENT Package Pin 1 Pin 2 Pin 3 (Case) TO-5 Emitter Base Collector NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. B17BH DATA SHEET #: TR0040D DOC
Solid State Devices, Inc. Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT501 and SFT503 Series Electrical Characteristic 4/ Symbol Min Typ Max Units Collector – Emitter Breakdown Voltage I C = 50mA BVCEO 150 200 –– Volts Collector – Base Breakdown Voltage I C = 200µA BVCBO 200 275 –– Volts Emitter – Base Breakdown Voltage I E = 200µA BVEB O 7 13 –– Volts Collector – Cutoff Current VCE = 100 V ICEO –– –– 1.0 µA Collector – Cutoff Current VCB = 100 V ICBO –– –– 500 nA Emitter – Cutoff Current V EB = 6 V IEB O –– –– 500 nA DC Current Gain * SFT501 SFT503 V CE = 5V, IC = 50mA VCE = 5V, IC = 2.5A VCE = 5V, IC = 5A VCE = 5V, IC = 50mA VCE = 5V, IC = 2.5A VCE = 5V, IC = 5A hFE Collector – Emitter Saturation Voltage * I C = 2.5A, IB = 250mA IC = 5.0A, IB = 500mA VCE(Sat) –– 0.35 0.6 0.75
1.5 Vol ts
Base – Emitter Saturation Voltage * IC = 2.5A, IB = 250mA IC = 5.0A, IB = 500mA VBE ( Sa t) –– 1.0 1.2 1.3 Current Gain Bandwidt h Product VCE = 5V, IC = 0.5A, f = 10MHz fT 40 60 –– MHz Output Capacitance VCB = 10V, IE = 0A, f = 1MHz cob –– 130 225 pF Input Capacitance VBE = 10V, IC = 0A, f = 1MHz Cib –– 450 600 pF Delay Time td –– 25 50 nsec Rise Time tr –– 40 250 nsec Storage Time tS –– 320 600 nsec Fall Time VCC = 50V, IC = 5A, IB1 = IB2 = 0.5A tf –– 130 300 nsec NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. B17BH DATA SHEET #: TR0040D DOC