TR0036 SSDI | Alldatasheet

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Solid State Devices, Inc.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFT390604A2 __ __ └ Screening 2/ __ = Commercial TX = TX Level TXV = TXV Level S = S Level Package GW = Gullwing SFT390604A2 Series Dual Microminiature Package 800 mA 75 Volts NPN/PNP Transistor Features:

  • High Speed Switching Transistor
  • Multiple Devices Reduce Board Space
  • High Power Dissipation: Up to 600 mW / device
  • TX, TXV, S-Level screening available
  • Replaces both 2N3906AU (PNP) & 2N3904AU(NPN) in one package Maximum Ratings (per device) Symbol PNP Value NPN Value Units Collector – Emitter Voltage V CEO 40 40 Volts Collector – Base Voltage V CBO 40 60 Volts Emitter – Base Voltage V CBO 6 6 Volts Continues Collector Current I C 200 200 mAmps Power Dissipation @ TC = 25ºC P D 600 600 mW Operating & Storage Temperature Top & Tstg -65 to +200 -65 to +200 ºC Maximum Thermal Resistance (Junction to Case) R θJC 0.29 0.29 ºC/mW Gullwing (GW) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0036 B Doc

Solid State Devices, Inc. Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT390604A2 Series Electrical Characteristic 4/ 5/ Symbol PNP Limit NPN Limit Units Collector – Emitter Sustaining Voltage IC = 1 mA BVCEO 40 min 40 min V Collector – Base Breakdown Voltage IC = 10 µA BVCBO 40 min 60 min V Emitter – Base Breakdown Voltage IC = 10 µA BVEBO 5 min 5 min V Collector Cutoff Current Vce = 30 V, Vbe = 3.0 V ICEX 50 max 50 max nA Collector Cutoff Current Vcb = -30 V ICBO 50 max 50 max nA Emitter Cutoff Current Veb = -3.0 V IEBO 50 max 50 max nA DC Forward Current Transfer Ratio * VCE = 1.0V, IC = 0.1 mA VCE = 1.0V, IC = 1.0 mA VCE = 1.0V, IC = 10 mA VCE = 1.0V, IC = 50 mA VCE = 1.0V, IC = 100 mA HFE 60 min 80 min 100 - 300 60 min 30 min 40 min 70 min 100 - 300 60 min 30 min Collector – Emitter Saturation Voltage * IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA VCE(Sat) 0.25 max 0.40 max 0.20 max 0.30 max V Base – Emitter Saturation Voltage * IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA VBE(Sat) 0.65 to 0.85 0.95 max 0.65 to 0.85 0.95 max V Frequency Transition VCE = 20V, IC = 20mA fT 250 min 300 min MHz Output Capacitance VCE = 10V, f = 1MHz cob 4.5 max 4.0 max pF Input Capacitance VCE = 0.5V, f = 1MHz cib 10 max 8.0 max pF Switch Times Turn-on Delay Time Rise Time Storage Time Fall Time Vcc=3V, IC = 10 mA IB1 = 1mA, IB2=-1mA Vbe(off) = 0.5 V td tr ts tf 35 max 35 max 225 max 75 max 35 max 35 max 200 max 50 max nsec Small Signal Current Gain (f = 1 khz ) VCE = 10V, IC = 1.0 mA hfe 100 - 400 100 - 400 Noise Figure Ic = 100 uA, Vce = 5 V, Rs = 1.0 kΩ, f = 1 khz NF 4.0 max 5.0 max db NOTES: * Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2% 1/ For Ordering Information, Price, and Availability Contact Factory. 2/ Screening per MIL-PRF-19500 3/ For Package Outlines Contact Factory. 4/ Unless Otherwise Specified, All Electrical Characteristics @25ºC. 5/ Negative bias conditions for the PNP device type Available Part Numbers: SFT390604A2GW PIN ASSIGNMENT Package Pin 1 Pin 2 Pin 3 Pin 4 Pin 5 Pin 6 PNP Device NPN Device GW Collector Base Emitter Collector Base Emitter