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Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, CA 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFT2222A2 __ __ └ Screening 2/ __= Commercial TX= TX Level TXV= TXV Level S= S Level Package GW= Gullwing SFT2222A2 Series Dual Microminiature Package 800 mA 75 Volts Dual NPN Transistor Features:  High Speed Switching Transistor  Multiple Devices Reduce Board Space  High Power Dissipation: Up to 660 mW  Replacement for 2N2222AU  TX, TXV, S-Level Screening Available 2/  NPN Complimentary Parts Available (SFT2907A2) Maximum Ratings Symbol Value Units Collector – Emitter Voltage VCEO 50 Volts Collector – Base Voltage VCBO 75 Volts Emitter – Base Voltage VEBO 6 Volts Continuous Collector Current IC 800 mA Power Dissipation @ TA= 25ºC Per Device Total PD 500 660 mW Operating & Storage Temperature TOP & Tstg -65 to +200 ºC Maximum Thermal Resistance (Junction to PCB) RθJ-PCB 245 ºC/W Gullwing (GW) Tolerances: .xx ±.01 .xxx ±.005 PIN 1 PIN 4 PIN 6 PIN 3 PIN 1 PIN 4 PIN 6 PIN 3 SSDI .193 .015±.010 .040 ±.010 .350 ±.010 6x R.010 .033 3x .015 .010.107 .130 2x .050 (=.100) 6x .030 .107 .034 .125 6x .010 .025 5x R.018 .015 .035 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0030F DOC

Solid State Devices, Inc. Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT2222A2 Series Electrical Characteristic 4/ Symbol Min Max Units Collector – Emitter Sustaining Voltage IC= 10 mA BV CEO 50 –– Volts Collector Cutoff Current VCE= 50 V I CES –– 50 nA Collector Cutoff Current VCB= 60 V VCB= 75 V VCB= 60 V, TA= 150ºC ICBO –– 0.01 µA Emitter Cutoff Current VEB= 4.0 V VEB= 6.0 V IEBO –– 0.01 10 µA DC Forward Current Transfer Ratio 5/ VCE= 10 V, IC= 0.1 mA VCE= 10 V, IC= 1.0 mA VCE= 10 V, IC= 10 mA VCE= 10 V, IC= 150 mA VCE= 10 V, IC= 500 mA VCE= 10 V, IC= 10 mA, TA= -55ºC HFE 100 100 325 300 Small-signal Forward Current Transfer Ratio VCE= 10 V, IC= 1.0 mA, f= 1 kHz h fe 50 — Collector – Emitter Saturation Voltage 5/ IC= 150 mA, IB= 15 mA IC= 500 mA, IB= 50 mA VCE(Sat) –– 0.3

1.0 Volts

Base – Emitter Saturation Voltage 5/ IC= 150 mA, IB= 15 mA IC= 500 mA, IB= 50 mA VBE(Sat) 0.6 1.2

2.0 Volts

Frequency Transition VCE= 20 V, IC= 20 mA, f= 100 MHz f T 250 –– MHz Switching Times VCC= 30 V, IC= 150 mA IB1= IB2= 15 mA, VBE(off)= 3 V ton toff 300 ns Output Capacitance VCE= 10 V, f= 1MHz c ob –– 8.0 pF Input Capacitance VCE= 0.5 V, f= 1MHz c ib –– 25 pF NOTES: 1/ For Ordering Information, Price, and Availability Contact Factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ For Package Outlines Contact Factory. 4/ Unless Otherwise Specified, All Electrical Characteristics @ 25ºC. 5/ Pulse Test: Pulse Width= 300µsec, Duty Cycle= 2% Available Part Numbers: SFT2222A2GW PIN ASSIGNMENT Package Pin 1 Pin 2 Pin 3 Pin 4 Pin 5 Pin 6 GW Collector1 Base1 Emitter1 Collector2 Base2 Emitter2 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0030F DOC