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NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0011B DOC Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFT10000 __ __ └ Screening 2/ __ = Not Screened TX = TX Level TXV = TXV Level S = S Level Package /3 = TO-3 SFT10000/3

20 AMP

350 VOLTS

Features:  BV CEO 350 Volts  Low Saturation Voltage  200 oC Operating Temperature  Hermetically Sealed, Isolated Package  TX, TXV, S-Level Screening Available. Consult Factory. Application Notes: SFT10000 Darlington Transistor is a direct replacement of Motorola MJ1000. It is designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated switchmode applications such as:  Switching Regulators  Inverters  Solenoid and Relay Drives  Motor Controls  Deflection Circuits Maximum Ratings Symbol Value Units Collector – Emitter Voltage VCEO 350 Volts Collector – Emitter Voltage VCEV 450 Volts Emitter – Base Voltage VEB 8 Volts Collector Current Continuous Peak IC ICM

30 Amps

Base Current IB 2.5 Amps Total Power Dissipation Derate above 50ºC @ TC = 25ºC @ TC = 100ºC PD 175 100 Watts Watts W/ºC Operating & Storage Temperature T J & TSTG -65 to +200 ºC Maximum Thermal Resistance (Junction to Case) R0JC 1 ºC/W NOTES: TO-3(/3) 1/ For ordering information, price, operating curves, and availability - contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request.

NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0011B DOC Solid State Devices, Inc. Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT10000/3 Electrical Characteristics Symbol Min Max Units Collector – Emitter Sustaining Voltage (IC = 250 mA, IB = 0, VCLAMP = Rated VCEO) VCEO(sus) 80 –– Volts Collector – Emitter Sustaining Voltage (VCLAMP = Rated VCEX, TC = 100ºC) IC = 2A IC = 10A VCEX(sus) 400 275 –– Volts Collector Cutoff Current (VCE = Rated Value, VBE(off) = 1.5V) TC = 25ºC TC = 100ºC ICBO 0.25 5.0 mA Collector Cutoff Current (VCEV = Rated VCEV, RBE = 50Ω, TC = 100ºC ) ICEV –– 5 mA Emitter Cutoff Current (VEB = 8V, IC = 0) IEBO –– 150 mA DC Current Gain* (VCE = 5V) IC = 5A IC = 10A HFE 50 600 400 Collector-Emitter Saturation Voltage* IC = 10A, IB = 400mA, TC = 25ºC IC = 20A, IB = 1A, TC = 25ºC IC = 10A, IB = 400mA, TC = 100ºC VCE (SAT) 1.9 3.0 2.0 Volts Base-Emitter Saturation Voltage* (IC = 10A, IB = 400mA) TC = 25ºC TC = 100ºC VBE (SAT) 2.5

2.5 Volts

(IF = 10A) VF –– 5.0 Volts Small Signal Current Gain (IC = 1A, VCE = 10V, f = 1MHz) HFE 10 –– Output Capacitance (VCB = 30V, IE = 0A, f = 2.0MHz) Cob 100 325 pF Delay Time VCC = 250V, IC = 10A, IB1 = IB2 = 400 mA, VBE (off) = 5V, tp = 50s, Duty Cycle ≤ 2% t(on) td tr 0.2 0.6 µs µs Rise Time Storage Time t(off) ts tf 3.5 2.4 μs µs Fall Time Storage Time IC = 10A(pk), VCLAMP = Rated VCEX, IB1 = 400 mA, VBE (off) = 5V, TC = 100ºC tsv –– 5.5 µs Crossover Time t c –– 3.7 µs NOTES: * Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2% CASE OUTLINE: TO-3 Pin Out: Case – Collector 1 – Base 2 – Emitter