TR0007_15 SSDI | Alldatasheet
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SOLID STATE DEVICES, INC. STX6905 FEATURES: DATA SHEET #: TR0007A MAXIMUM RATINGS SYMBOL UNITS VALUE V EBO 6 VoltsEmitter-Base Voltage V CBO 600 VoltsCollector-Base Voltage IC 1Collector Current Collector-Emitter Voltage R BE = 1 kOhms V CEO V CER 450 600 Amps Volts Watts mW/ oC
- B V CBO 600V .
- Fast Switching.
- Low Leakage.
- Low Saturation Voltage.
- 200 oC Operating, Gold Eutectic Die Attach.
- Designed for Complementary Use with STX7905. TO-59 CASE OUTLINE: TO-59 Pin Out: 1 - Collector 2 - Base 3 - Emmiter
1 AMP
600 VOLTS
Total Device Dessipation @ TC = 25oC Derate above 25oC P D 133 IB 0.5Base Current Amps DESIGNER'S DATA SHEET
14005 Stage Road * Santa Fe Springs, Ca 90670
Phone: (562) 404-4474 * Fax: (562) 404-1773 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. oCOperating and Storage Temperature T J, T STG -65 to +200 oC/WThermal Resistance, Junction to Case R 1JC 7.5
SOLID STATE DEVICES, INC. STX6905 PRELIMINARY V DC 450 600 -BV CEO BV CER Collector-Emitter Breakdown Voltage* V600 -Collector-Base Breakdown Voltage (IC = 100uADC ) V8-BV EBO Emitter-Base Breakdown Voltage (IE = 20uADC ) :A-1ICBO Collector Cutoff Current (VCB = 600VDC ) Phone: (562) 404-4474 * Fax: (562) 404-1773 MIN MAXELECTRICAL CHARACTERISTICS SYMBOL UNITS DC Current Gain* 40 0.5Collector-Emitter Saturation Voltage* C = 25mADC, IB = 2.5mADC ) V CE(SAT) V DC H FE Base-Emitter Saturation Voltage* (IC = 25mADC, IB = 2.5mADC ) 1.0 V DCV BE(SAT) Current Gain Bandwidth Product (IC = 50mADC , V CE = 10VDC, f = 1MHz) 20 - MHzfT 20 pfOutput Capacitance (VCB = 30VDC , IE = 0ADC, f = 1.0MHz) -C ob *Pulse Test: Pulse Width = 300us, Duty Cycle = 2% BV CBO (IC = 1mADC; V CE = 10VDC ) (IC = 25mADC; V CE = 10VDC ) (IC = 100mADC; V CE = 15VDC ) 200 200 ( IC = 1 mADC) (IC = 100:A DC ; RBE = 1kS) :A-1IEBO Emmiter Cutoff Current (VEB = 6VDC )