TR0005_15 SSDI | Alldatasheet
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SOLID STATE DEVICES, INC. SFT6800 FEATURES: DATA SHEET #: TR0005B MAXIMUM RATINGS SYMBOL UNITS VALUE VEBO 10 VoltsEmitter-Base Voltage VCBO 500 VoltsCollector-Base Voltage IC 2Collector Current Collector-Emitter Voltage V CEO 400 Amps Volts oC W mW/oC oC/W B V CEO 400V. Fast Switching. Very Low Leakage. Low Saturation Voltage. 200 oC Operating, Gold Eutectic Die Attach. Designed for Complementary Use with SFT1192. TO-5 CASE OUTLINE: TO-5
2 AMP
500 VOLTS
Operating and Storage Temperature T J, TSTG -65 to +200 6.67 150 Thermal Resistance, Junction to Case R 2JC 15 Total Device Dissipation @ TC=100oC Derate above 100oC PD IB 0.5Base Current Amps DESIGNER’S DATA SHEET BASE EMITTER COLLECTOR
14005 Stage Road * Santa Fe Springs, Ca 90670
Phone: (562) 404-4474 * Fax: (562) 404-1773 NOTE: All specifications are subject to change without notification. SCD’s for these devices should be reviewed by SSDI prior to release.
SOLID STATE DEVICES, INC. SFT6800 PRELIMINARY V400 -BVCEO Collector-Emitter Breakdown Voltage (IC = 20mADC) V500 -Collector-Base Breakdown Voltage (IC = 100uADC) V10 -BVEBO Emitter-Base Breakdown Voltage (IE = 20uADC) nA- 200ICBO Collector Cutoff Current (VCB = 400VDC) nA- 200ICEV Collector Cutoff Current (VCE = 400VDC, VEB = 1.5VDC) Phone: (562) 404-4474 * Fax: (562) 404-1773 MIN MAXELECTRICAL CHARACTERISTICS SYMBOL UNITS nAEmitter Cutoff Current (VEB = 6VDC) -IEBO 200 DC Current Gain* (VCE = 5VDC) 500Collector-Emitter Saturation Voltage* C = 500mADC, IB = 50mADC) VCE(SAT) mVDC HFE Base-Emitter Saturation Voltage* (IC = 500mADC, IB = 50mADC) 1.0 V DCVBE (SAT) Current Gain Bandwidth Product (IC = 50mADC , VCE = 10VDC, f = 20MHz) 25 - MHzfT 40 pfOutput Capacitance (VCB= 30VDC , IE = 0ADC, f = 2.0MHz) -Cob (VCC = 330VDC , IC = 500mADC, IB1 = IB2 = 100mADC RB1 = RB2 = 330S)Turn Off Time *Pulse Test: Pulse Width = 300us, Duty Cycle = 2% t(on) 700 ns t(off) 2000 ns BVCBO Turn On Time (IC = 50mADC) (IC = 500mADC) (IC = 1.0ADC)