TR0001 SSDI | Alldatasheet
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Technical content
Designer's Data Sheet SOLID STATE DEVICES, INC. SFT4959 FEATURES: 30mA
18 VOLTS
DATA SHEET #: TR0001A Maximum Ratings SYMBOL UNITSVALUE V EBO 3 Volts Emitter-Base Voltage V CBO 25 Volts Collector-Base Voltage IC 30 Collector Current Collector-Emitter Voltage V CEO 18 mA Volts oC Operating and Storage Temperature T J, T STG -65 to +200 1.14 W mW/ oC oC/mW Thermal Resistance, Junction to Case R2JC .87 Total Device Dissipation @ TC=100 oC Derate above 100 oC PD
- PNP Silicon Annular Transistor
- High Speed
- High Frequency
- Low Noise TO-72
14005 Stage Road * Santa Fe Springs, Ca 90670
Phone: (562) 404-4474 * Fax: (562) 404-1773 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release.
SOLID STATE DEVICES, INC. SFT4959 Electrical Characteristics * SYMBOL Phone: (562) 404-4474 * Fax: (562) 404-1773 V UNITSMIN MAX
25 V -
3BV EBO V- Emitter-Base Breakdown Voltage (IE =0.1mAdc) -ICBO uA0.1 Collector Cutoff Current (VCB =10Vdc) 20hFE 200 Forward Current Transfer Ratio (IC =2mA, V CE =10Vdc) 1000 - -p F 0.8 Collector-Base Capacitance (VCB =10 Vdc , IE =0 , f =1 MHz ) Cob Current Gain Bandwidth Product (IC =10mA, V CE =10Vdc , f =100 MHz) fT BV CBO Collector-Base Breakdown Voltage (IC =0.1mAdc) Collector-Emitter Breakdown Voltage (IC =1mAdc) 18BV CEO - *T J = 25oC (Unless Otherwise Specified) CASE OUTLINE: TO-72 PIN 1: EMITTER PIN 2: BASE PIN 3: COLLECTOR PIN 4: CASE MHz PRELIMINARY