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WEJ ELECTRONIC CO.,LTD TPT5609 TRANSISTOR (NPN)
FEATURES
P C M : 1 W ( T a mb = 2 5 ℃ ) Collector current I C M : 1 A Collector-base voltage V (BR)CBO: 2 5 V Operating and storage junction temperature range TJ, Tstg: -55 ℃ to +150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s M I N T Y P M A X U N I T Collector-base breakdown voltage V(BR)CBO Ic=10µA, IE=0 25 V Collector-emitter breakdown voltage V(BR)CEO Ic=1mA, IB=0 20 V Emitter-base breakdown voltage V(BR)EBO IE=10µA, IC=0 5 V Collector cut-off current ICBO VCB=20V, IE=0 1 µA Emitter cut-off current IEBO VEB=5V, IC=0 1 µA DC current gain hFE VCE=2V, IC=500mA 60 240 Collector-emitter saturation voltage VCE(sat) IC=800mA, IB=80mA 0.5 V Base-emitter voltage VBE VCE=2V, IC=500mA 1 V Transition frequency fT V CE=2V, IC=500mA 190 MHz Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 22 pF CLASSIFICATION OF h FE Rank A B C Range 60-120 85-170 120-240 1 2 3 TO-92L 1. EMITTER 2. COLLECTOR 3. BASE TPT5609 Http:// www.wej.cn E-mail:wej@yongerjia.com WEJ ELECTRONIC CO. RoHS