TPS9125 TI | Alldatasheet
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5 V/3 V SIM SUPPLY AND LEVEL SHIFTERS
SLVS244A – SEPTEMBER 1999 – REVISED NOVEMBER 1999 1POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 /C0068Integrated SIM Supply and Level Shifters /C0068Selectable 5-V or 3-V SIM Supply Voltage /C00683-V to 5-V Level Shifters, Bidirectional for SIM Data Line /C006810 kV ESD Protection (HBM) on SIMDATA, SIMRST, and SIMCLK Terminal /C006814 Terminal TSSOP /C0068Minimum Supply Voltage 2.7 V /C0068Integrated PullUp Resistor for DATA and SIMDATA /C0068Thin Shrink, Small Outline, Left-Hand Tape and Reel Package
description
The TPS9125 SIM supply and level shifter integrates a programmable 3-V or 5-V SIM supply, conformable to the (GSM) test specification 11.10, together with either a 3-V or 5-V level shifter, conformable to the GSM specification 11.11 and 11.12. A charge pump, utilizing two external capacitors, is configured as voltage doubler to generate a 5-V supply rail from V DD . Dependent on the SIM card used, a control signal coming from the SIM card controller is applied on the MODE terminal to switch between a 3-V or 5-V supply on the SIMVCC output terminal. A 3-V/5-V bidirectional level shifter translates the 3-V compatible logic signal on DATA terminal into a 5-V compatible logic signal SIMDATA terminal, and vice versa. RST and CLK are unidirectional level shifters, providing a 5-V SIMRST and SIMCLK signal from the microcontroller to the SIM card. The SIM supply is operating provided SIMPWR = 1 and V DD is sufficient (> 2.7 V). Under this condition, SIMVCC voltage is generated by the SIM supply charge pump. A RESET terminal is provided for security reasons to switch off the SIM supply and interface if the SIM card is disconnected or removed by accident. The TSP9125 is packaged in TI’s thin shrink small-outline package (PW). AVAILABLE OPTIONS TA PACKAGETA (PW) –30°C to 85°C TSP9125PWR † † Suffix R stands for left-handed tape and reel. Copyright 1999, Texas Instruments IncorporatedPRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. TI is a trademark of Texas Instruments Incorporated. VDD RESET MODE SIMPWR DATA CLK RST SIMVCC VCAP1 VCAP2 SIMDATA GND SIMCLK SIMRST PW PACKAGE (TOP VIEW)
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(Charge Pump) Control Block OSC 800 kHz VREF Control Block Level Shifter ESD ESD ESD VCAP1 VCAP2 SIMPWR MODE RESET DATA CLK RST GND SIMVCC SIMDATA SIMCLK SIMRST VDD or SIMVCC VDD 10 kW 20 kW Terminal Functions TERMINAL I/O DESCRIPTION NAME NO. I/O DESCRIPTION CLK 6 DI 3-V SIM clock signal. This terminal is connected to the SIM interface and works with 3-V logic level. DATA 5 DI/O 3-V bidirectional data line. This terminal is connected to the SIM interface and works with 3-V logic level. GND 10 Ground MODE 3 DI Programs the SIM supply voltage to SIMVCC = 5 V (MODE = 0) or SIMVCC = 3 V (MODE = 1). RESET 2 DI Reset for the TSP9125 SIM supply and interface in case the SIM is removed under operation. RST 7 DI 3-V SIM reset signal. This terminal is connected to the SIM interface and works with 3-V logic level. SIMCLK 9 DO 3-V/5-V SIM clock signal. This terminal is connected to the SIM reader contacts. SIMRST 8 DO 3-V/5-V SIM reset signal. This terminal is connected to the SIM reader contacts. SIMDATA 11 DI/O 3-V/5-V bidirectional data line. This terminal is connected to the SIM reader contacts. SIMVCC 14 SIM supply voltage. Can be switched between 5 V ± 10% and 3 V ± 10%. This terminal is connected to the SIM reader contacts. Connect a 1 mF ± 20% capacitor between SIMVCC and GND. SIMPWR 4 DI SIM supply enable terminal. SIMPWR = 0 leaves SIMVCC open, SIMPWR = 1 enables SIM supply. VCAP1 13 Charge pump capacitor. Connect 220 nF ± 20% capacitor between VCAP1 and VCAP2. VCAP2 12 Charge pump capacitor. Connect 220 nF ± 20% capacitor between VCAP1 and VCAP2. VDD 1 Supply voltage input. Connect a power bypass capacitor of 1 mF between VDD and GND. Connect capacitor physically close to the VDD terminal.
- SIMPWR = 0: SIMVCC is left open, voltage generator disabled.
- SIMPWR = 1: Depending on the signal on control terminal MODE, SIMVCC is either programmed to:
CC is equal to the supply voltage VDD minus a voltage drop of 50 mV maximum. In 5-V mode, a regulated charge pump is used to step-up the 3-V supply rail (min 2.7 V) to the 5-V supply rail. on SIMRST, SIMCLK, and SIMDATA. DD minus a voltage drop of 50 mV maximum. terminals are kept low and SIMVCC is left open. SIMVCC is left open, until RESET is taken high again. Table 1. Control Block Function Table
0 X X SIM supply disabled; SIMVCC open; SIMRST and SIMCLK and SIMDATA low
SIMVCC programmed to 5-V mode. SIMVCC programmed to 3-V mode.
1 X 1 TSP9125 in normal operation mode; SIM supply enabled, SIMVCC = 5 V or 3 V depending on how it was
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detailed description (continued) level shifters The level shifters on TSP9125, when operating in the 5-V mode, convert a 3-V compatible logic signal from a digital control chip (SIM Controller) into a 5-V compatible logic signal for the SIM Card. Operating in the 3-V mode, the level shifters are disabled and only pass the signal through. The level shifters for reset and clock signal are unidirectional (RST to SIMRST, CLK to SIMCLK). The level shifter for the data signal is bidirectional, enabling signal exchange in both directions (DATA to SIMDATA and SIMDATA to DATA). During power up and power down of the TSP9125, the voltage level on the SIMRST, SIMCLK, and SIMDATA terminals is kept below 0.4 V for currents less than 1 mA flowing into the TSP9125, provided V DD is applied. pullup resistors The DATA and SIMDATA I/O pullup resistors are integrated in the device. The DATA resistor is 20 kW and the SIMDATA resistor is 10 kW . oscillator An integrated RC oscillator provides the charge pump with a nominal clock frequency of 800 kHz. voltage reference An integrated bandgap reference provides a reference voltage of 1.192 V to the charge pump to control and regulate the output voltage. ESD protection In a cellular telephone (GSM phone) the SIMRST, SIMCLK, and SIMDATA terminals are connected directly to the contacts of the SIM reader. This means they are accessible from the outside and therefore require increased ESD protection. The terminals withstand 10 kV ESD when tested according to human body model (HBM), 100 pF through 1500 W . DISSIPATION RATING TABLE PACKAGED TA < 25°C POWER RATING OPERATING FACTOR ABOVE T A = 25°C TA = 70°C POWER RATING PW 556 mW 5.56 mW/°C 306 mW
SLVS244A – SEPTEMBER 1999 – REVISED NOVEMBER 1999 5POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 DISSIPATION DERATING CURVE vs FREE-AIR TEMPERATURE 25 35 45 55 Power Dissipation – mW 65 75 85 TA – Free-Air Temperature – °C R thJA – 180°C/W absolute maximum ratings over operating free-air temperature (unless otherwise noted)† † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. recommended operating conditions MIN NOM MAX UNIT Supply voltage, VDD 2.7 3 3.3 V Charge pump capacitor between VCAP1 and VCAP2 220 nF Charge pump output capacitor on SIMVCC 1 mF Input capacitor on VDD 0.1 1 mF Operating free-air temperature range –30 85 °C Operating virtual junction temperature range –30 125 °C ESD susceptibility kV SIMRST, SIMCLK, SIMDATA (human body model, 100 pF through 1500 W ) 10 (TBC) kV All other terminals (human body model, 100 pF through 1500 W ) 2
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electrical characteristics over recommended operating junction temperature range, VDD = 3 V, C VCAP1/2 = 220 nF ± 20%; CSIMVCC = 1 mF ± 20%; SIMPWR = 1 (unless otherwise noted) voltage generator charge pump (SIMVCC) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Output voltage at SIMVCC, 5-V mode2.7 V < VDD < 3.3 V, fSIMCLK = 0 MHz, ISIMVCC = 10 mA, MODE = 0 (default value) 4.5 5.5 V Output voltage at SIMVCC, 3-V mode2.7 V < VDD < 3.3 V, MODE = 1 ISIMVCC = 6 mA, VDD –50 mV VDD –50 mV V Output current at SIMVCC, 5-V mode (see Note 1) 2.7 V < VDD < 3.3 V 10 mA Output current at SIMVCC, 3-V mode (see Note 1) 2.7 V < VDD < 3.3 V 6 MA Switching frequency (internal oscillator frequency) 440 800 1160 kHz Output ripple 5-V mode, Iout = 10 mA 100 mV Startup time Standby to 5-V mode 1 ms Power efficiency ISIMVCC = 10 mA 82.5% NOTE 1: The SIM supply circuit is designed according to the GSM specification 11.11 and 11.12 and complies to the requirements of GSM test specification 11.10. For more information, please see application section. level shifters (see Note 2) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Clock frequency CLK/SIMCLK 5-V mode 1 5 MHzClock frequency CLK/SIMCLK 3-V mode 1 4 MH z Clock duty cycle on SIMCLK 5-V mode and 3-V mode, CLK input 50% duty cycle 40% 50% 60% Output load, driver side 70 100 pF Data rate on DATA/SIMDATA Clk/372 Clk/32 MHz Residual voltage at SIMRST, SIMCLK, SIMDATA in powerdown modeSIMPWR = 0, I = 8 mA –0.4 0.4 V NOTE 2: The level shifters are designed according to the GSM specification 11.11 and 11.12. logic inputs (CLK, MODE, RESET, RST, SIMPWR) (see Note 3) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VIH High-level input voltage 0.7×VDD V VIL Low-level input voltage 0.3×VDD V Input capacitance 10 pF Input current –20 –10 1 Input leakage current VIN = 0.5 V to 3 V –1 1 NOTE 3: For each state VIH, VIL, a positive current is defined as flowing out of the TSP9125. logic output SIMCLK in 3-V mode (according to GSM 11.12) (see Note 4) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VOH High-level output voltage IOHmax = 20 mA 0.7×SIMV CC SIMV CC V Low-level output voltage IOLmax = –20 mA 0 0.2×SIMV CC V Rise/fall time SIMCLK (see Note 5) C in = Cout = 100 pF 50 ns NOTES: 4. For each state VOH , VOL , a positive current is defined as flowing out of the TSP9125. 5. To allow for overshoot the voltage on SIMCLK should remain between –0.3 V and SIMVCC+0.3 V during dynamic operations.
SLVS244A – SEPTEMBER 1999 – REVISED NOVEMBER 1999 7POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 electrical characteristics over recommended operating junction temperature range, VDD = 3 V, C VCAP1/2 = 220 nF ± 20%; CSIMVCC = 1 mF ± 20%; SIMPWR = 1 (unless otherwise noted) (continued) logic output SIMCLK in 5-V mode (according to GSM 11.11) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VOH High-level output voltage (see Note 4)IOHmax = 20 mA 0.7×SIMV CC SIMV CC V VOL Low-level output voltage (see Note 4)IOLmax = –200 mA 0 0.5 V tr/tf Rise/fall time SIMCLK (see Note 5 and 6)C in = Cout = 100 pF, fSIMCLK = 5 MHz 18 ns NOTES: 4. For each state VOH , VOL , a positive current is defined as flowing out of the TSP9125. 5. To allow for overshoot the voltage on SIMCLK should remain between –0.3 V and SIMVCC+0.3 V during dynamic operations. 6. The maximum rise/fall time is 9% of the SIMCLK period. logic output SIMRST in 3-V mode (according to GSM 11.12) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VOH High-level output voltage (see Note 4)IOHmax = 200 mA 0.8×SIMV CC SIMV CC V VOL Low-level output voltage (see Note 4)IOLmax = –200 mA 0 0.2×SIMV CC V tr/tf Rise/fall time SIMRST (see Note 5)C in = Cout = 100 pF 400 ms NOTES: 4. For each state VOH , VOL , a positive current is defined as flowing out of the TSP9125. 5. To allow for overshoot the voltage on SIMCLK should remain between –0.3 V and SIMVCC+0.3 V during dynamic operations. logic output SIMRST in 5-V mode (according to GSM 11.11) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VOH High-level output voltage (see Note 4)IOHmax = 200 mA SIMV CC –0.7V SIMV CC V VOL Low-level output voltage (see Note 4)IOLmax = –200 mA 0 0.6 V tr/tf Rise/fall time SIMRST (see Note 5)C in = Cout = 100 pF 400 ms NOTES: 4. For each state VOH , VOL , a positive current is defined as flowing out of the TSP9125. 5. To allow for overshoot the voltage on SIMCLK should remain between –0.3 V and SIMVCC+0.3 V during dynamic operations. logic input/output DATA PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VIH High-level input voltage on DATA (see Note 7) 0.7×VDD V VIL Low-level input voltage on DATA (see Note 7) 0.2×VDD V VOH High-level output voltage on DATA (see Note 7)IOHmax = 20 mA, VSIMDATA = 3 V 0.7×VDD VDD V VOL Low-level output voltage on DATA (see Note 7)IOLmax = –1 mA, VSIMDATA = 0 V 0 0.4 V tr/tf Rise/fall time DATA (see Note 5) C in = Cout = 100 pF, Integrated pullup resistor = 20 kW 1 ms NOTES: 5. To allow for overshoot the voltage on SIMCLK should remain between –0.3 V and SIMVCC+0.3 V during dynamic operations. 7. For each state VOH , VOL , VIH, VIL, a positive current is defined as flowing out of the TSP9125.
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electrical characteristics over recommended operating junction temperature range, VDD = 3 V, C VCAP1/2 = 220 nF ± 20%; CSIMVCC = 1 mF ± 20%; SIMPWR = 1 (unless otherwise noted) (continued) logic input/output SIMDATA in 3-V mode (according to GSM 11.12) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VIH High-level input voltage on SIMDATA (see Note 7) IIHmax = ± 20 mA 0.7×SIMV CC SIMV CC +0.3V V VIL Low-level input voltage on SIMDATA (see Note 7) IILmax = 1 mA –0.3 0.2×SIMV CC V VOH High-level output voltage on SIMDATA (see Note 7) IOHmax = 20 mA, VDATA = 3 V 0.7×SIMV CC SIMV CC V VOL Low-level output voltage on SIMDATA (see Note 7) IOLmax = –1 mA, VDATA = 0 V 0 0.4 V tr/tf Rise/fall time SIMRST (see Note 5) C in = Cout = 100 pF, Integrated pullup resistor = 10 kW 1 ms NOTES: 5. To allow for overshoot the voltage on SIMCLK should remain between –0.3 V and SIMVCC+0.3 V during dynamic operations. 7. For each state VOH , VOL , VIH, VIL, a positive current is defined as flowing out of the TSP9125. logic input/output SIMDATA in 5-V mode (according to GSM 11.12) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VIH High-level input voltage on SIMDATA (see Note 7) IIHmax = ± 20 mA 0.7×SIMV CC SIMV CC +0.3V V VIL Low-level input voltage on SIMDATA (see Note 7) IILmax = 1 mA –0.3 0.8 V VOH High-level output voltage on SIMDATA (see Note 7) IOHmax = 20 mA, VDATA = 3 V 0.7×SIMV CC SIMV CC V VOL Low-level output voltage on SIMDATA (see Note 7) IOLmax = –1 mA, VDATA = 0 V 0 0.4 V tr/tf Rise/fall time SIMRST (see Note 5) C in = Cout = 100 pF, Integrated pullup resistor = 10 kW 1 ms NOTES: 5. To allow for overshoot the voltage on SIMCLK should remain between –0.3 V and SIMVCC+0.3 V during dynamic operations. 7. For each state VOH , VOL , VIH, VIL, a positive current is defined as flowing out of the TSP9125. supply current PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Powerdown/programming mode SIMPWR = 0 5 mA SIMV CC = 5 V, ISIMVCC = 0 mA 125 Ground current operating SIMV CC = 5 V, ISIMVCC = 10 mA 200 mAGround current, operating SIMV CC = 3 V, ISIMVCC = 0 mA 25 mA SIMV CC = 3 V, ISIMVCC = 6 mA 40
Figure 1. Clock Duty Cycle Measurment Figure 2. Rise and Fall Time Measurment Figure 3. Current Direction Convention Figure 4. Parameter Measurment Information
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Figure 5. Parameter Measurment Information SIMDATA (microcontroller and SIM card).
SLVS244A – SEPTEMBER 1999 – REVISED NOVEMBER 1999 11POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TYPICAL CHARACTERISTICS Figure 6 POWER LOSS vs CURRENT LOAD Charge Pump Theoretical Limit 0123456 Power Loss – mW 789 1 0 Lload – mA T = 27°C Nominal Models C pump = 220 nF C sim = 1 mF VDD = 3 V Figure 7 POWER EFFICIENCY vs CURRENT LOAD Theoretical Limit Charge Pump T = 27°C Nominal Models C pump = 220 nF C sim = 1 mF VDD = 3 V 0123456 Power Efficiency – % 789 1 0 Lload – mA Figure 8 Power Efficiency – % 3.2 3.3 3.4 3.5 VDD Supply Voltage - V Theoretical Limit Charge Pump T = 27°C Nominal Models C pump = 220 nF C sim = 1 mF IO = 10 mA POWER EFFIENCY vs SUPPLY VOLTAGE Figure 9 4.5 5V Output Startup – V 5.5 3.2 3.3 3.4 3.5 VDD Supply Voltage - V TA = –40°C SIMVCC = 1 mF C pump = 220 nF Lload = 10 mA TA = 100°C TA = 27°C 5V OUTPUT STARTUP vs SUPPLY VOLTAGE
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Implementation of integrated circuits in low profile and fine-pitch surface-mount packages requires special attention to power dissipation. Many system-dependent issues such as thermal coupling, airflow, added heat sinks and convection surfaces, as well as the presence of other heat-generating components, affect the power-dissipation limits of a given component. Three basic approaches for enhancing thermal performance are listed below. /C0068Improving the power dissipation capability of the PWB design /C0068Improving the thermal coupling of the component to the PWB /C0068Introducing airflow in the system Using the given RqJA for this IC, the maximum power dissipation can be calculated with the equation: P D(MAX) /C0043 TJ(MAX) /C0042TA R /C0081JA 5.030 5.025 5.050 – 1 0 0 1 02 03 04 05 0
5 V Mode SIMVCC Output – V
5.035
5 V MODE SIMVCC OUTPUT
5.040 60 70 80 90 TA – Free-Air Temperature – °C Figure 10
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APPLICATION INFORMATION
The charge pump can be used to generate a negative voltage from a positive supply voltage, or to voltage-double, triple, or otherwise multiply the supply voltage. In the TSP9125, a charge pump is used to generate a 5-V supply rail from an input voltage of 3 V. Figure 11 is used to explain the principle of a charge pump when configured as a voltage doubler. Figure 11. Principal of a Charge Pump Configured as a Voltage Doubler is stable at this value, with only a small amount of ripple, which is normally around 1% of the supply voltage. The ripple depends on the oscillator frequency, the load on SIMVCC, and the size of output capacitor C2. switching losses in capacitor C1. an oscillator frequency is applied. Figure 11 shows the functional block diagram of the voltage generator.
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1.192 V Mode VCAP2 VCAP1 MODE SIMPWR SIMVCC GND TPS9125 VDD Figure 12. Functional Block Diagram of the Voltage Generator oscillator. In this state, all switching losses are zero, and the load is supplied only from the output capacitor C2. The charge pump and oscillator are reactivated if the voltage at SIMVCC drops below a defined lower threshold. defined upper threshold. Figure 12 shows the waveform of the charge pump output SIMVCC in 5-V mode. minimized, because the charge pump and the oscillator are only activated when they are needed. Figure 13. Typical Waveform at Charge Pump Output SIMVCC in 5-V Mode
SLVS244A – SEPTEMBER 1999 – REVISED NOVEMBER 1999 15POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 4.5 4.3 4.2 0 0.5 1 1.5 2 2.5 3 Voltage Out – V 4.7 4.8 SIM Clock Frequency – MHz 4.9 3.5 4 4.5 5 4.6 4.4 4.1 VDD = 3.3 V VDD = 2.8 V VDD = 2.7 V VOLTAGE OUTPUT vs SIM CLOCK FREQUENCY Figure 14. Voltage At SIMVCC vs Frequency at SIMCLK Terminal in 5-V Mode dc load on SIMVCC (10 mA) and the ac load of 100 pF on SIMCLK buffer. DD minus the conduction losses across the switches. SIMVCC, and the charge pump operating frequency.
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output capacitor C2 (continued) Increasing the value of the capacitor C2 will increase the time the charge pump is disabled. The power consumption of the charge pump will be reduced, because the active time in which switching losses occur is shorter. However, a larger value of C2 also results in a longer start-up time for the 5-V supply. Based on the above considerations a 1 mF capacitor is recommended for C2. pump capacitor C1 The value of pump capacitor C1 has a big impact on the start-up time of the charge pump: this is the time needed to charge the output capacitor C2 from 0 V up to 5 V. The recommended value for capacitor C1 is 220 nF, thus ensuring a start-up time of less than 1ms. If a lower value for capacitor C1 is chosen, the start-up time will increase. input capacitor During the activation time of the charge pump there are steep current slopes of about 40 mA on the supply input V DD . Therefore, it is recommended to use a low ESR 1 mF capacitor, such as a multilayer ceramic or tantalum capacitor, on the VDD terminal. capacitor selection The exact capacitance value of the capacitors used is not as critical as the use of high quality and low ESR (equivalent serial resistance) capacitors, such as multilayer ceramic or tantalum capacitors. The ESR of C1 causes a voltage drop during charging and discharging, and this degrades the performance of the charge pump. Low ESR is most critical for the choice of capacitor C1, because the charge current of this capacitor is twice as much as the load current and the current through output capacitor C2. If a tantalum capacitor is used for C1, the positive terminal should be connected to VCAP1. The ESR of output capacitor C2 increases the ripple on SIMVCC. The ESR of C2 has only a minor influence, because the ripple on SIMVCC in the TSP9125 is fixed at maximum 100 mV, due to the two-point regulation scheme used. If a tantalum capacitor is used for C2, the positive terminal should be connected to SIMVCC. pulsed output current above the minimum allowed voltage level when spikes in the current consumption of the card occur. For a 5-V SIM card interface, those spikes are up to a maximum charge of 40nAs. To test for this requirement, current pulses of maximum 400 ns duration and maximum 200 mA amplitude are drawn from SIMVCC. For a 3-V SIM card interface, those spikes are up to a maximum 12 mA charge. To test for this requirement, current pulses of maximum 400ns duration and maximum 60-mA amplitude are drawn from SIMVCC. In 5-V mode (MODE = 0), SIMV CC must stay above 4.5 V, in 3-V mode (MODE = 1), it must stay above 2.7 V. Because the TSP9125 charge pump itself is too slow to counteract these peaks, the correct combination of capacitors on SIMVCC must be chosen to cope with these requirements. In addition to the 1 mF ±20% low ESR ceramic capacitor used to buffer the SIMVCC output, it is recommended to connect a 100 nF ceramic capacitor as close as possible to the contacting elements.
SLVS244A – SEPTEMBER 1999 – REVISED NOVEMBER 1999 17POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 enabling and disabling the TSP9125 The TSP9125 meets the deactivation requirements according to GSM 11.11 paragraph 4.3.2, and ISO/IEC 7816-3 paragraph 5.4. These specifications define that the I/O line of the SIM card must be pulled low before the supply voltage of the SIM card is deactivated. In 3-V and 5-V mode, the SIMDATA terminal of the TSP9125 is pulled low before SIMVCC is disabled. During normal operation mode (3-V or 5-V) the SIMPWR and RESET inputs must be high. If one of these terminals is switched low, the supply of the SIM card is deactivated. In Figure 15 and Figure 16, the SIMPWR terminal is pulled low. The I/O line of the SIM card (SIMDATA) is pulled low immediately although DATA is high, whereas the supply voltage on SIMVCC decreases to approximately 2 V quickly and then needs about 100 ms to reach 0 V. Thus, when the operating mode is changed from the 5-V tsupply to the 3-V supply, the voltage on SIMVCC is decreased to a level below the supply voltage V DD to prevent reverse current flow. In Figure 15 to Figure 17, the RESET terminal is pulled low externally. Also in this situation, SIMDATA goes low immediately although the input signal at DATA is high. SIMPWR SIMDATA SIMVCC 0 V 5 V Figure 15. Powerdown Characteristic in 5-V mode vs Time: 50 ms/div
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Figure 16. Power-Down Characteristic in 5-V Mode vs Time: 20 ms/div Figure 17. Reset Characteristic in 5-V Mode vs Time: 50 ms/div
SLVS244A – SEPTEMBER 1999 – REVISED NOVEMBER 1999 19POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 Figure 18. Reset Characteristic in 5-V Mode vs Time: 20 ms/div
5 V SIMVCC Output – V
5 V Mode,
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0 0.2 0.4 0.6
5 V Output Startup – V
t – Time – ms
5 V OUTPUT STARTUP
0.8 1 1.2 Load = 10 mA Figure 22 02 4
5 V Output Shutdown – V
t – Time – ms
5 V OUTPUT SHUTDOWN
1.5 0 0.1 0.2 0.3
3 V Output Startup – V
2.5 t – Time – ms
3 V OUTPUT STARTUP
3.5 0.4 0.5 0.6 0.5 Figure 24 1.5 0.5 01 3 3
3 V Output Shutdown – V
2.5 t – Time – ms
3 V OUTPUT SHUTDOWN
3.5 456
SLVS244A – SEPTEMBER 1999 – REVISED NOVEMBER 1999 21POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 2.89 2.87 2.85 01 2 3 Voltage Output – V 2.91 2.93 SIM Clock Frequency – MHz VOLTAGE OUTPUT vs SIM CLOCK FREQUENCY 2.95
3 V Mode SIMVCC
2.95 2.90 Voltage Output – V 3.05 Load Current – mA VOLTAGE OUTPUT vs LOAD CURRENT 3.10
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C1 = 220 nF VCAP1 VCAP2 SIMPWR MODE RESET DATA CLK RST RESET SIMVCC SIMDATA SIMCLK SIMRST GND C2 = 1 mF VDD Input Bypass Capacitor C3 = 1 mF SIM Card Inserted VCC C4 = 100 nF VCC SIM Card I/O CLK RST mC or Dedicated SIM Controller Figure 27. Typical Application
SLVS244A – SEPTEMBER 1999 – REVISED NOVEMBER 1999 23POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 MECHANICAL DATA PW (R-PDSO-G**) PLASTIC SMALL-OUTLINE PACKAGE
14 PINS SHOWN
0,65 M0,10 0,10 0,25 0,50 0,75 0,15 NOM Gage Plane 9,80 9,60 7,90 7,70 2016 6,60 6,40 4040064/F 01/97 0,30 6,60 6,20 0,19 4,30 4,50 0,15 A 1,20 MAX 5,10 4,90 3,10 2,90 A MAX A MIN DIM PINS ** 0,05 4,90 5,10 Seating Plane 0°-8° NOTES: A. All linear dimensions are in millimeters. B. This drawing is subject to change without notice. C. Body dimensions do not include mold flash or protrusion not to exceed 0,15. D. Falls within JEDEC MO-153
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