TPR500A MICROSEMI | Alldatasheet
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Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. GENERAL DESCRIPTION The TPR 500A is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor includes input prematch for broadband capaility. Low thermal resistance package reduces junction temperature, extends life. CASE OUTLINE 55KT, STYLE 1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC2 1750 Watts Maximum Voltage and Current BVces Collector to Base Voltage 55 Volts BVebo Emitter to Base Voltage 3.5 Volts Ic Collector Current 40 Amps Maximum Temperatures Storage Temperature - 65 to + 200 oC Operating Junction Temperature + 200 oC ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS Pout Pin Pg η c VSWR Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance F = 1090 MHz Vcc = 50 Volts PW = 10 µsec DF = 1% F = 1090 MHz 500 5.2 150 10:1 Watts Watts dB BVebo BVces hFE θjc2 Emitter to Base Breakdown Collector to Emitter Breakdown DC - Current Gain Thermal Resistance Ie = 30 mA Ic = 30 mA Ic = 500 mA, Vce = 5 V 3.5 0.1 Volts Volts oC/W Note 1: At rated output power and pulse conditions 2: At rated pulse conditions Rev A June, 1994 TPR 500A