TPR400A MICROSEMI | Alldatasheet
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Technical content
The TPR400A is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. Low thermal resistance packaging reduces the junction temperature and extends device lifetime. CASE OUTLINE 55CX, STYLE 1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC2 875 Watts Maximum Voltage and Current BVces Collector to Base Voltage 55 Volts BVebo Emitter to Base Voltage 4.0 Volts Ic Collector Current 30 Amps Maximum Temperatures Storage Temperature - 65 to + 150 oC Operating Junction Temperature + 200 oC ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS Pout Pin Pg η c VSWR Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance F = 1030 &1090 MHz Vcc = 50 Volts PW = 10 µsec DF = 1% 400 9.5 5:1 Watts Watts dB BVebo BVces hFE θjc1 Emitter to Base Breakdown Collector to Emitter Breakdown DC - Current Gain Thermal Resistance Ie = 20 mA Ic = 25 mA Ic = 2.5 A, Vce = 5 V 4.0 100 Volts Volts oC/W Note 1: At rated output power and pulse conditions Rev B – November 2009 TPR400A
400 Watts, 50 Volts, Pulsed
TPR400A Test Circuit Component Designations and Values Part Description Part Description C1 1000 uF Electrolytic Capcitor Z6 1000 x 700 mils (W x L) C2 1 uF Chip Capacitor Z7 25 x 90 mils (W x L) C3 33pF Chip Capacitor (ATC 100A) Z8 325 x 120 mils (W x L) L1, L2 4 Turns, 20AWG, IDIA 0.1” Z9 25 x 120 mils (W x L) Z1 25 x 630 mils (W x L) Z10 100 x 270 mils (W x L) Z2 300 x 315 mils (W x L) Z11 450 x 200 mils (W x L) Z3 25 x 305 mils (W x L) Z12 25 x 245 mils (W x L) Z4 330 x 130 mils (W x L) Z13 25 x 205 mils (W x L) Z5 1000 x 600 mils (W x L) PCB Duroid 5880; Er2.22, H=10mils
Device Impedance Information ZS ZL Typical Impedance Values Frequency (MHz) Z S(Ω) Z L(Ω) 1030 0.96 – j3.29 1.02 – j2.51 1090 1.00 – j3.02 1.12 – j2.24 * V cc = 50V, Pin = 45W * Pulse Format: 10µs, 1% Long Term Duty Factor Input Matching Network Output Matching Network