TPM2626-14 TOSHIBA | Alldatasheet
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FEATURES : ™@ HIGH POWER > PARTIALLY MATCHED TYPE Pigg = 42.0 dBm at 2.6 GHz M@ HIGH GAIN ™ HERMETICALLY SEALED PACKAGE Gia = 12.0 dB at 2.6 GHz RF PERFORMANCE SPECIFICATIONS (Ta = 25°C) CHARACTERISTICS SYMBOL CONDITION UNIT fawn, | rye, | max. | Output Power at 1dB Power Gain at 1dB Vps = 10 V Compression Point ioe f = 2.6 GHz 11.0 12.0 a aoe] Power Added ETisendy Le p= pa fp ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTICS SYMBOL CONDITION UNIT J amin, | rye, | max, | Vos = 3V Transconductance gm lpg = 3.5 A mS 3200 . Vos = 3V . Vos = 3V Saturated Drain Current lpss Ves = 0V A 10 13 Gate-Source Breakdown _ NOTE 1: ATch = (Vpg X Ipg + Pin - Pigs) * Rin (c-o) * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. + The information contained herein may be changed without prior notice. It is therefore advisable to contact TOSHIBA before proceeding with the design of equipment incorporating this product. Ps TOSHISA CORPORATION Sx any Jan., 1994
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTICS SYMBOL RATING PACKAGE OUTLINE (2-11D1B)
0640.15 Unit in mm
@ FA 4-Ci2 | = @® Gate @® Drain 9 y 3 S ” Bd ane | iu ® = 1740.3 2740.2 11,0MAX. a pos 12 | [M1] >é < S 3|2 Rie lals ole lls HANDLING PRECAUTIONS FOR PACKAGED TYPE Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C.
Output Power vs. Frequency wee | TTT | | Ips 3 4A - 2 oS gfe N PLE EVE Ty CEE EEE 24 25 26 27 28 Frequency (GHz) Output Power vs. Input Power ee ee Vos = 10V lps 5 4A we ee EEE EE gy te TT
2 Tadd
"EERE ETT 20 22 24 26 28 30 32 34 36 Pin (dBm)
POWER DISSIPATION VS. CASE TEMPERATURE 100 TTT oO OPT AO ¢ LOD e @ONCCP Ce eo LORKEEE CCCP NCCE o-EEE ESE FCP EES (OEE PSS 0 40 80 120 160 200 Te (°C) DRAWING OF MATCHING NETWORK INPUT OUTPUT 2.0 2.0 4 Ld 1.0 4.0 Unit in mm Substrate Material : Teflon (Er = 2.8) Thickness : 0.76 mm
(MAGN. and ANGLES) Vps = 10V, Ips = 4A f = 1.6~3.4 GHz +1 +90" y +1507 +30" 40.2, ald CNS 5 QLD ia, Lhe ON Vea SIF SO Oy \\ -120° 60" a —o— sn -90° —— sa Free | moe | acta | anata | mol ne | (GHz) MAG ANG MAG ANG