TPM2323-30 TOSHIBA | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 5
Technical content
FEATURES : @ HIGH POWER M@ PARTIALLY MATCHED TYPE Pigg = 44.5 dBm at 2.3 GHz M@ HIGH GAIN M HERMETICALLY SEALED PACKAGE Giap = 11.5 dB at 2.3 GHz RF PERFORMANCE SPECIFICATIONS (Ta = 25°C) CHARACTERISTICS SYMBOL CONDITION UNIT [mn | rye. | max. | Output Power at 1dB jen [os | as | Power Gain at 1dB Vos = 10 V Compression Point Grae f = 2.3GHz 10.5 | 11.5 La Power Added Eficncy ee ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTICS SYMBOL CONDITION UNIT J awn, | rye. | max. | Transconductance gm Vos = 3Vv mS 6300 ps = 7.0A , Vos = 3V : Vos = 3V Gate-Source Breakdown _ NOTE 1: ATch = (Vps * Ips + Pin - Pigs) X Rin (c—c) Recommended Gate Resistance(Rg) :30 Q (MAX) a The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. + The information contained herein may be changed without prior notice. It is therefore advisable to contact TOSHIBA before proceeding with the design of equipment incorporating this product. RE TOSHIBA CORPORATION xy June, 19
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTICS SYMBOL UNIT RATING PACKAGE OUTLINE (2-16G1B) 0.7 40.15 : Unit in mm z 1.0 @O S ooh a ® Gate iq p ® Source a b Ce ¢ @ Drain S 3 3 ® | l ® z % 5 ma BS af QV i Z 20.4+0.3 24.5MAX. FEI 16.4MAX. al Ss xs uo >] eal en By] ea} a 5| S15 Ys] dle] aj HANDLING PRECAUTIONS FOR PACKAGED TYPE Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C.
Output Power vs. Frequency werev | | TT TT lpg 3 8A e 4 of | o eam TaetL YEN TT e Ltt ttt tT Te 21 22 23 24 25 Frequency (GHz) Output Power vs. Input Power Vps = 10V lpg 37.54 46 [Pol w ET Tt | | rs eat ttt ty gut tT TT pl Ane 38 4 30 weet xi Et ye Pil ey tt?
34 Z <4 10
20 22 24 26 28 30 32 34 36 Pin (dBm)
POWER DISSIPATION VS. CASE TEMPERATURE “CELTTT TTT TT og a PIN | PP “LERECETETH EER 2 (oN f yp P PIN TTT | wo} |) tT TAP TT He}
0 Mi -H AH
oLtt |i ttt NG 0 40 80 120. 160 ~=—-200 Te (°C) DRAWING OF MATCHING NETWORK INPUT ouTPUT 2 13 32, 4 he Ry Substrate Material : Teflon (Er = 2.8) Thickness : 0.76 mm
nscseomee nernrmenecrerorencacmmmnccmes | NII 3 93-3 [j aeconmeacessemenssteenesiness TPM2323-30 S-PARAMETERS. (MAG.and ANGLES) Vos = 10V,Ips = 8.0A f =1.1~2.9GHz +1 +90° os a ee el wt ‘i N43 BI 2 eR (eae out Bae | 34 af #280 7% | OSE AKER -0.2) 5 —~ ~~ 120° = 60° 7 —o— Si ~ 80° S21 FREQUENCY Su | Si2 (GHz) MAG ANG MAG ANG