TPM2025NP3 TECHPUBLIC | Alldatasheet
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Technical content
WWW.TECHPUBLIC.COM WWW.TECHPUBLC.COM Product Summary
- VDS 20V
- IDS (VGS=4.5V) 2.5A
- RDS(ON) (VGS=4.5V) ≤ 100mΩ Package and Pin Configuration Circuitdiagram DFN1006-3 Absolute Maximum Ratings （TA=25℃unless otherwise noted） Thermal Characteristic Note:Whenmounted on1"square PCB (FR4material). PARAMETER SYMBOL LIMIT UNIT Drain-SourceVoltage VDS 20 V Gate-SourceVoltage VGS ±12 V ContinuousDrainCurrent TA=25°C ID 2.5 A ContinuousDrainCurrent TA=70°C ID 1.8 A PulsedDrainCurrent(t=100μs) IDM 10 A MaximumPowerDissipation TA=25℃ PD 0.715 W OperatingJunctionTemperatureRange TJ -55to+150 ℃ StorageTemperatureRange Tstg -55to+150 ℃ PARAMETER Symbol Value Unit ThermalResistancefromJunctionto Ambient(t≤10s) PCBMount (Note ) RθJA 175 °C/W Application
- InterfacingSwitching
- DC-DCConverters
- Powermanagementfunctions TopView A ll data sheet.com
WWW.TECHPUBLIC.COM WWW.TECHPUBLC.COM Electrical Characteristics （TA=25℃unless otherwise noted） Notes: 1.Pulsetest; pulsewidth ≤300µS,dutycycle ≤2%. 2.Guaranteed bydesign, notsubject toproduction testing. 3.Independent ofoperating temperature PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Characteristics Drain-Source Breakdown Voltage VGS=0V,ID=10µA BVDSS 20 -- -- V Gate-Source Threshold Voltage VDS=VGS,ID=250µA VGS(th) 0.45 0.75 0.9 V Gate-Source Leakage VDS=0V,VGS=±12V IGSS -- -- ±100 nA Zero GateVoltageDrainCurrent VDS=20V,VGS=0V IDSS -- -- 1.0 μA Drain-SourceOn-StateResistance (Note1) VGS=4.5V,ID=1A RDS(on) -- 88 100 mΩ VGS=2.5V,ID=1A -- 95 110 ForwardTransconductance(Note2) VDS=2V,ID=1A gfs -- 6 -- S Dynamic(Note2) Input Capacitance VDS=10V,VGS=0V, F=1.0MHz Ciss -- 135 -- pFOutput Capacitance Coss -- 16 -- ReverseTransferCapacitance Crss -- 19 -- Switching Turn-OnDelayTime(Note3) VDS =10V, VGs=4.5V, ID =1A, RG =6Ω. td(on) -- 9.0 -- nS RiseTime(Note3) tr -- 23 -- Turn-OffDelayTime(Note3) td(off) -- 38 -- FallTime(Note3) tf -- 3.0 -- TotalGateCharge VDS =10V, ID=1A, VGS=4.5V Qg -- 2.2 -- nCGateSourceCharge Qgs -- 0.18 -- GateDrainCharge Qgd -- 0.6 -- Source-DrainDiodeRatingsandCharacteristics(Note2) Forward Voltage VGS =0V,IF =1A VSD -- 0.8 1.3 V Continuous Source Current Integral reverse diode intheMOSFET IS -- -- 2.5 A Pulsed Current (Note1) ISM -- -- 10 A A ll data sheet.com
WWW.TECHPUBLIC.COM WWW.TECHPUBLC.COM TYPICALCHARACTERISTICS A ll data sheet.com
WWW.TECHPUBLIC.COM WWW.TECHPUBLC.COM TYPICALCHARACTERISTICS A ll data sheet.com
WWW.TECHPUBLIC.COM WWW.TECHPUBLC.COM Package Outline Dimensions(unit: mm) DFN1006-3 Mounting PadLayout(unit: mm) A ll data sheet.com