TPM1919-60 TOSHIBA | Alldatasheet
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FEATURES : ™@ HIGH POWER Ml PARTIALLY MATCHED TYPE Pigp = 48.0 dBm at 1.9 GHz Mi HIGH GAIN M HERMETICALLY SEALED PACKAGE Giap = 13 dB at 1.9GHz RF PERFORMANCE SPECIFICATIONS (Ta = 25°C) CHARACTERISTICS SYMBOL CONDITION [unr Jann. | rye, | max, | Output Power at 1dB [om | ero | ae | - | Power Gain at 1dB G Vps = 12V Compression Point 108 f = 1.9GHz los (AF OW)=6A [A | =| vo | 50 | Channel-Tenperature Fis a ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTICS SYMBOL CONDITION UNIT [awn | rye, | max. | Vos = 3V « | pinch. Vos = 3V - Pinch-off Voltage Vesott lpg = 300mMA Vv —1.0 1.8 -3.0 Saturated Drain Current \\ Vos = 3V A 38 46 DSS Ves = 0V Gate-Source Breakdown __ NOTE1 : ATch = (VDS x IDS + Pin — Po) x Rth (C-C) > RECOMMENDED GATE RESISTANCE (Rg) : Re=30 Q (MAX. ) * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. 7 * The information contained herein may be changed without prior notice. It is therefore advisable to contact TOSHIBA before proceeding with the design of equipment incorporating this product. - Re TOSHIBA CORPORATION Sees cana Jan. 1999
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) famsweownm |e Sr PACKAGE OUTLINE (2-16G6A) 1.0#0.15 Unit inmm Zz 4-10 Of FA @® Gate 3 3 Ral iE TL, 204403 24.5 MAX. 16.4 MAX. bad s 3 ad 3s 3 4 H Sos JNG PRECAUTIONS FO! KKAGED TYPI Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C.
RF PERFORMANCES. Output Power vs. Frequency voy TT TT Ipg=12A & 49 s {itty rt tt g 48 rT TNL wHLETEETE TT Frequency (GHz) Output Power vs. Input Power cree TTT TTT Vps=12V sogesza | | | | Ld "CLEC LO “COP
7 Ai | |
e“CLET | ~ f\\___ Nada 42 40 PELE 7 vA Al 40 30 TT Yi rt ty.
38 LA 20
Ke} PTT TPP Ett to “CEPPPEEE Prey? 25 27 29 31 33 35 37 Pin (dBm)
POWER DISSIPATION VS. CASE TEMPERATURE PT TT TTT Ty Ty ge SNE PIN TT ETT TT PEPIN TET TTT 2 [IIT N TTT ty fot TT ATT TTT BERANE PT TTT IN GT PT TTT PIN TT EEN » LETT TTT NI 0 40 80 120 160 200 Te (°C)