TPM100VAND56 TECHPUBLIC | Alldatasheet

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Absolute Maximum Ratings (TA=25°C unless otherwise specified) 100V N-Channel MOSFET Package and Pin Configuration Circuit diagram Load/Power switch Interfacing, logic switching Battery management for ultra protable electronics Application Application Product Summary TPM1 00V A www.sot23.com.tw VDS = 100V ID = 105 A RD S(ON) < 5.5 mΩ @ VGS=10V RDS(ON) < 8 mΩ @ VGS=4.5V DFN5*6-8L Symbol Parameter N-Channel Unit VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ±20 TJ Maximum Junction Temperature 150 °C TSTG Storage Temperature Range -55 to 150 °C IDM ① Pulse Drain Current Tested TC=25°C 142 A ID Continuous Drain Current TC=25°C 105 A TC=100°C 65 PD Maximum Power Dissipation TC=25°C 89 W TC=100°C 36 IAS ② Avalanche Current, Single pulse L=0.1mH 38 A EAS ② Avalanche Energy, Single pulse L=0.1mH 72 mJ S饌u5[P ND5 6 A ll data sheet.com

Electrical Characteristics (T =25°C unless otherwise specified) S饌u5[P Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Electrical Characteristics BVDSS Drain-Source Breakdown Voltage V GS=0V, IDS=250uA 100 - - V IDSS Zero Gate Voltage Drain Current V DS=80V, VGS=0V - - 1 uA VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250uA 1 2 3 V IGSS Gate Leakage Current VGS=±20V, VDS=0V - - ±100 nA RDS(ON) Drain-Source On-state Resistance VGS=10V, IDS=20A - 4 .5 5.5 mΩ VGS=4.5V, IDS=10A - 6 .5 8 .5 gfs Forward Transconductance V DS=5V, IDS=10A - 3 0.2 - S Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V, Freq.=1MHz - 0 .5 - Ω Ciss Input Capacitance VGS=0V, VDS=50V, Freq.=1MHz - 3 358 - pF Coss Output Capacitance - 9 24 - Crss Reverse Transfer Capacitance - 42 - td(ON) Turn-on Delay Time VGS=10V,VDS=25V, ID=1A,RGEN=3Ω - 13.3 - nS tr Turn-on Rise Time - 4 .2 - td(OFF) Turn-off Delay Time - 2 .9 - tf Turn-off Fall Time - 101.4 - Qg Total Gate Charge VGS=4.5V,VDS=50V ID=20A - 3 2.9 - nC Qg Total Gate Charge VGS=10V,VDS=50V, ID=20A - 6 4.3 - Qgs Gate-Source Charge - 1 5.2 - Qgd Gate-Drain Charge - 1 4.6 - Source-Drain Characteristics VSD Diode Forward Voltage ISD=10A, VGS=0V - 0 .8 1.1 V trr Reverse Recovery Time IF=20A, VR=50V dlF/dt=100A/s - 4 7.7 - nS Qrr Reverse Recovery Charge - 5 9.4 - nC 100V N-Channel MOSFET TPM1 00V A www.sot23.com.tw ND5 6 A ll data sheet.com

Typical Electrical and Thermal Characteristic Curves S饌u5[P 100V N-Channel MOSFET TPM1 00V A www.sot23.com.tw ND5 6 A ll data sheet.com

S饌u5[P 100V N-Channel MOSFET TPM1 00V A www.sot23.com.tw ND5 6 A ll data sheet.com

Package Outline Dimensions Symbol Common mm Inch Mim Max Min Max A 1.03 1.17 0.0406 0.0461 b 0.34 0.48 0.0134 0.0189 c 0.824 0.0970 0.0324 0.082 D 4.80 5.40 0.1890 0.2126 D1 4.11 4.31 0.1618 0.1697 D2 4.80 5.00 0.1890 0.1969 E 5.95 6.15 0.2343 0.2421 E1 5.65 5.85 0.2224 0.2303 E2 1.60 / 0.0630 / e 1.27 BSC 0.05 BSC L 0.05 0.25 0.0020 0.0098 L1 0.38 0.50 0.0150 0.0197 L2 0.38 0.50 0.0150 0.0197 H 3.30 3.50 0.1299 0.1378 I / 0.18 / 0.0070 S饌u5[P DFN5*6-8L 100V N-Channel MOSFET TPM1 00V A www.sot23.com.tw ND5 6 A ll data sheet.com