TPDVXX40 STMICROELECTRONICS | Alldatasheet
Document overview
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- PDF pages: 8
Technical content
Features
- On-state current (IT(RMS)): 40 A
- Max. blocking voltage (V DRM/VRRM): 1200 V
- Gate current (IGT): 200 mA
- Commutation at 10 V/µs: up to 142 A/ms
- Noise immunity: 500 V/µs
- Insulated package: – 2,500 V rms (UL recognized: E81734)
Description
The TPDVxx40 series use a high performance alternistor technology. Featuring very high commutation levels and high surge current capability, this family is well adapted to power control on inductive load (motor, transformer...). 723LQVXODWHG Table 1. Device summary
40 A 200 mATPDV840RG 800 V
1 Characteristics
Table 2. Absolute ratings (limiting values)
- A1, A2, gate terminals to case for 1 minute
Table 3. Electrical Characteristics (T j = 25 °C, unless otherwise specified)
- For either polarity of electrode A 2 voltage with reference to electrode A 1.
Figure 9. Safe operating area below curve Figure 5. Relative variation of gate trigger Figure 6. Non repetitive surge peak on-state Figure 7. Non-repetitive surge peak on-state Figure 8. On-state characteristics
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7 PD[
2 Package information
- Epoxy meets UL94, V0
- Cooling method:C (by conduction)
- Recommended torque value:0.9 to 1.2 N .m In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
2.1 TOP3 insulated package information
Figure 10. TOP3 insulated package outline
Table 6. TOP3 insulated package mechanical data
- Values in inches are converted from mm and rounded to 4 decimal digits.
3 Ordering information
4 Revision history
Table 7. Ordering information Table 8. Document revision history 30-Mar-2011 1 Initial release. Format updated to current standard.