TPDV625 STMICROELECTRONICS | Alldatasheet

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TPDV 625 ---> 1225 March 1995 ALTERNISTORS Symbol Parameter Value Unit IT(RMS) RMS on-state current (360° conduction angle) Tc = 85°C2 5 A ITSM Non repetitive surge peak on-state current ( Tj initial = 25°C) tp = 2.5 ms 390 A tp = 8.3 ms 250 tp = 10 ms 230 I2tI 2t value tp = 10 ms 265 A 2s dI/dt Critical rate of rise of on-state current Gate supply : IG = 500mA di G /dt = 1A/µs Repetitive F = 50 Hz

20 A/ µs

Storage and operating junction temperature range - 40 to + 150 - 40 to + 125 Tl Maximum lead temperature for soldering during 10 s at 4.5 mm from case 260 °C TOP 3 (Plastic) G .HIGH COMMUTATION : > 88 A/ms (400Hz) .INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : EB81734) .HIGH VOLTAGE CAPABILITY : VDRM = 1200 V

DESCRIPTION

Symbol Parameter TPDV Unit 625 825 1025 1225 VDRM VRRM Repetitive peak off-state voltage Tj = 125°C 600 800 1000 1200 V ABSOLUTE RATINGS (limiting values)

FEATURES

The TPDV 625 ---> 1225 use a high performance passivated glass alternistor technology. Featuring very high commutation levels and high surge cur- rent capability, this family is well adapted to power control on inductive load (motor, transformer...)

GATE CHARACTERISTICS (maximum values) Symbol Parameter Value Unit Rth (j-a) Contact to ambient 50 °C/W Rth (j-c) DC Junction to case for DC 1.5 °C/W Rth (j-c) AC Junction to case for 360° conduction angle ( F= 50 Hz) 1.1 °C/W Symbol Test Conditions Quadrant Value Unit IGT VD =12V (DC) R L=33Ω Tj=25°C I-II-III MAX 150 mA VGT VD =12V (DC) R L=33Ω Tj=25°C I-II-III MAX 1.5 V VGD VD =V DRM R L=3.3kΩ Tj=125°C I-II-III MIN 0.2 V tgt V D =V DRM IG = 500mA dIG /dt = 3A/µs Tj=25°C I-II-III TYP 2.5 µs IL IG =1.2 IGT Tj=25°C I-III TYP 100 mA II 200 IH *I T= 500mA gate open Tj=25 °C TYP 50 mA VTM *I TM = 35A tp= 380µs Tj=25 °C MAX 1.8 V IDRM IRRM VDRM Rated VRRM Rated Tj=25°C MAX 0.02 mA Tj=125°C MAX 8 dV/dt * Linear slope up to VD =67%V DRM gate open Tj=125°C MIN 500 V/ µs (dI/dt)c * (dV/dt)c = 200V/µs Tj=125 °C MIN 20 A/ms (dV/dt)c = 10V/µs8 8 * For either polarity of electrode A2 voltage with reference to electrode A1. PG (AV)=1 W P GM = 40W (tp = 20µs) I GM =8 A( t p=2 0µs) V GM = 16V (tp = 20µs).

ELECTRICAL CHARACTERISTICS

TPDV 625 ---> 1225

Fig.1 :Maximum RMS power dissipation versus RMS on-state current (F=50Hz). (Curves are cut off by (dI/dt)c limitation) Fig.2 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact. Fig.3 :RMS on-state current versus case temperature. 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3 0.01 0.10 1.00 Zth/Rth Zth(j-c) Zth(j-a) tp(s) Fig.4 :Relative variation of thermal impedance versus pulse duration. Fig.5 :Relative variation of gate trigger current and holding current versus junction temperature. Fig.6 : Non Repetitive surge peak on-state current versus number of cycles. TPDV 625 ---> 1225

Fig.7 :Non repetitive surge peak on-state current for a sinusoidal pulse with width : t ≤ 10ms, and corresponding value of I2t. Fig.8 :On-state characteristics (maximum values). Fig.9 :Safe operating area. TPDV 625 ---> 1225

Cooling method : C Marking : type number Weight : 4.7 g Recommended torque value : 0.8 m.N. Maximum torqur value : 1 m.N. H R4 . 6 C A G D B P N N L M JI REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. A 15.10 15.50 0.594 0.611 B 20.70 21.10 0.814 0.831 C 14.30 15.60 0.561 0.615 D 16.10 16.50 0.632 0.650 G 3.40 - 0.133 - H 4.40 4.60 0.173 0.182 I 4.08 4.17 0.161 0.164 J 1.45 1.55 0.057 0.062 L 0.50 0.70 0.019 0.028 M 2.70 2.90 0.106 0.115 N 5.40 5.65 0.212 0.223 P 1.20 1.40 0.047 0.056 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics.  1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Nether- lands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. TPDV 625 ---> 1225